NXP Semiconductors Preliminary Data Document Number: Order from RF Marketing Rev. 1.0, 09/2017 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Typical Performance: VDD = 50 Vdc Signal Type Pout (W) 915 (1) CW 750 19.3 67.1 915 (2) Pulse (100 sec, 10% Duty Cycle) 850 20.4 71.0 1300 CW 700 18.0 56.0 Frequency (MHz) Gps (dB) D (%) MRF13750H MRF13750HS PREPRODUCTION 700-1300 MHz, 750 W CW, 50 V RF POWER LDMOS TRANSISTORS Load Mismatch/Ruggedness Frequency (MHz) 915 (2) Signal Type VSWR Pin (W) Test Voltage Pulse (100 sec, 20% Duty Cycle) > 10:1 at all Phase Angles 15.9 Peak (3 dB Overdrive) 50 Result NI--1230H--4S MRF13750H No Device Degradation 1. Measured in 915 MHz reference circuit (page 4). 2. Measured in 915 MHz narrowband production test fixture (page 7). Features Internally input matched for ease of use Device can be used single--ended or in a push--pull configuration Characterized for 30 to 50 V for ease of use Suitable for linear applications with appropriate biasing Integrated ESD protection Recommended driver: MRFE6VS25GN (25 W) Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Typical Applications 915 MHz industrial heating/welding systems 1300 MHz particle accelerators NI--1230S--4S MRF13750HS Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections This document contains information on a preproduction product. Specifications and information herein are subject to change without notice. 2017 NXP B.V. RF Device Data NXP Semiconductors MRF13750H MRF13750HS 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS -0.5, +105 Vdc Gate--Source Voltage VGS -6.0, +10 Vdc Operating Voltage VDD 55, +0 Vdc Storage Temperature Range Tstg -65 to +150 C Case Operating Temperature Range TC -40 to +150 C TJ -40 to +225 C PD TBD TBD W W/C Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature TBDC, 750 W CW, 50 Vdc, IDQ(A+B) = TBD mA, 915 MHz RJC TBD C/W Thermal Impedance, Junction to Case Pulse: Case Temperature TBDC, 750 W Peak, TBD sec Pulse Width, TBD% Duty Cycle, 50 Vdc, IDQ(A+B) = TBD mA, 915 MHz ZJC TBD C/W Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) TBD, passes TBD V Charge Device Model (per JESD22--C101) TBD, passes TBD V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IDSS -- -- 10 Adc 105 -- -- Vdc Off Characteristics (4) Zero Gate Voltage Drain Leakage Current (VDS = 105 Vdc, VGS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 55 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 275 Adc) VGS(th) 1.3 1.9 2.3 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, IDQ(A+B) = 200 mAdc, Measured in Functional Test) VGS(Q) 1.8 2.2 2.3 Vdc Drain--Source On--Voltage (4) (VGS = 10 Vdc, ID = 2.8 Adc) VDS(on) 0.1 0.21 0.6 Vdc On Characteristics 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.nxp.com/RF/calculators. (Calculator available when part is in production.) Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Each side of device measured separately. (continued) MRF13750H MRF13750HS 2 RF Device Data NXP Semiconductors Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In NXP Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 200 mA, Pout = 850 W Peak (170 W Avg.), f = 915 MHz, 100 sec Pulse Width, 10% Duty Cycle Power Gain Gps 19.0 20.4 22.0 dB Drain Efficiency D 66.0 71.0 -- % Table 5. Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) IDQ(A+B) = 200 mA Frequency (MHz) 915 Signal Type VSWR Pin (W) Pulse (100 sec, 20% Duty Cycle) > 10:1 at all Phase Angles 15.9 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation 1. Part internally input matched. MRF13750H MRF13750HS RF Device Data NXP Semiconductors 3 915 MHz REFERENCE CIRCUIT - 3.0 3.8 (7.6 cm 9.7 cm) Table 6. 915 MHz Performance (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 150 mA, Pin = 8.8 W, TC = 25C Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 915 CW 750 19.3 67.1 MRF13750H MRF13750HS 4 RF Device Data NXP Semiconductors 915 MHz REFERENCE CIRCUIT - 3.0 3.8 (7.6 cm 9.7 cm) C13 C9 C11 C5 C7 R1 C1 D94455 C2* C3* C4* Q1 R11 R2 Rev. 0 Q2 C6 C8 C15 R7 R9 R8 R4 R3 R5 R6 C14 R10 U1 C10 C12 *C2, C3 and C4 are mounted vertically. Figure 2. PRF13750H Reference Circuit Component Layout - 915 MHz Table 7. PRF13750H Reference Circuit Component Designations and Values - 915 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C5, C6, C11, C12 47 pF Chip Capacitor ATC100B470JT500XT ATC C7, C8, C15 1 F Chip Capacitor GRM21BR71H105KA12L Murata C9, C10 1000 pF Chip Capacitor ATC100B102JT50XT ATC C13, C14 470 F, 100 V Electrolytic Capacitor MCGPR100V477M16X32--RH Multicomp Q1 RF Power LDMOS Transistor MRF13750H NXP Q2 NPN Bipolar Transistor BC847ALT1G ON Semiconductor R1, R2 10 1/4 W Chip Resistor CRCW120610R0JNEA Vishay R3 5 k Multi--turn Cermet Trimmer Potentiometer 3224W--1--502E Bourns R4 20 k 1/10 W Chip Resistor RR1220P--203--B--T5 Susumu R5 4.7 k 1/10 W Chip Resistor RR1220P--472--D Susumu R6, R8 1.2 k 1/8 W Chip Resistor CRCW08051K20FKEA Vishay R7 10 1/8 W Chip Resistor CRCW080510R0FKEA Vishay R9 2.2 k 1/8 W Chip Resistor CRCW08052K20JNEA Vishay R10 4.7 k 1/2 W Chip Resistor CRCW12104K70FKEA Vishay R11 2 1/2 W Chip Resistor ERJ--14YJ2R0U Panasonic U1 Voltage Regulator 5 V, Micro8 LP2951ACDMR2G ON Semiconductor PCB Rogers TC600, 0.025", r = 6.15 D94455 MTL MRF13750H MRF13750HS RF Device Data NXP Semiconductors 5 TYPICAL CHARACTERISTICS - 915 MHz REFERENCE CIRCUIT 800 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 Pin, INPUT POWER (WATTS) 90 VDD = 50 Vdc, IDQ = 150 mA, f = 915 MHz 22 700 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) 23 VDD = 50 Vdc, IDQ = 150 mA, f = 915 MHz 80 Gps 21 70 60 20 19 50 D 18 40 17 30 16 20 15 0 100 200 300 400 500 600 700 800 D, DRAIN EFFICIENCY (%) 900 10 900 Pout, OUTPUT POWER (WATTS) f (MHz) P1dB (W) P3dB (W) 915 690 800 Figure 4. Power Gain and Drain Efficiency versus CW Output Power Figure 3. CW Output Power versus Input Power MRF13750H MRF13750HS 6 RF Device Data NXP Semiconductors 915 MHz NARROWBAND PRODUCTION TEST FIXTURE - 4.0 6.0 (10.2 cm 15.2 cm) C1 C3 C24 C5 C26 B1 Rev. 0 C7 D87851 Coax1 C28 C22 C12 Coax3 L1 R1 C9 C14* CUT OUT AREA C11 C10 R2 Coax2 C13 C8 L2 Coax4 C23 B2 C2 C16* C17* C15* C18* C19* C20* C21* C25 C4 C6 C27 C29 *C14, C15, C16, C17, C18, C19, C20 and C21 are mounted vertically. Figure 5. PRF13750H Narrowband Test Fixture Component Layout - 915 MHz Table 8. PRF13750H Narrowband Test Fixture Component Designations and Values - 915 MHz Part Description Part Number Manufacturer B1, B2 RF Bead, Short 2743019447 Fair--Rite C1, C2 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C3, C4 2.2 F Chip Capacitor C1825C225J5RAC Kemet C5, C6 0.1 F Chip Capacitor CDR33BX104AKWS AVX C7, C8, C22, C23 36 pF Chip Capacitor ATC100B360JT500XT ATC C9, C10 10 pF Chip Capacitor ATC100B100JT500XT ATC C11 13 pF Chip Capacitor ATC100B130JT500XT ATC C12, C13 12 pF Chip Capacitor ATC100B120JT500XT ATC C14, C15 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC C16, C17, C18, C19, C20, C21 36 pF Chip Capacitor ATC100B360JT500XT ATC C24, C25 0.01 F Chip Capacitor C1825C103K1GAC--TU Kemet C26, C27, C28, C29 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp Coax1, 2, 3, 4 25 , Semi Rigid Coax, 2.2 Shield Length UT--141C--25 Micro Coax L1, L2 5 nH Inductor A02TKLC Coilcraft R1, R2 10 , 3/4 W Chip Resistor CRCW201010R0FKEF Vishay PCB Arlon, AD255A, 0.03, r = 2.55 D87851 MTL MRF13750H MRF13750HS RF Device Data NXP Semiconductors 7 TYPICAL CHARACTERISTICS - 915 MHz PRODUCTION TEST FIXTURE VDD = 50 Vdc, IDQ = 200 mA, f = 915 MHz, Pulse Width = 100 sec 10% Duty Cycle Gps, POWER GAIN (dB) 21 Gps 80 70 60 20 D 19 50 18 40 17 30 16 0 100 200 D, DRAIN EFFICIENCY (%) 22 20 300 400 500 600 700 800 900 1000 1100 Pout, OUTPUT POWER (WATTS) PEAK f (MHz) P1dB (W) P3dB (W) 915 867 978 Figure 6. Power Gain and Drain Efficiency versus Output Power MRF13750H MRF13750HS 8 RF Device Data NXP Semiconductors 915 MHz NARROWBAND PRODUCTION TEST FIXTURE f MHz Zsource Zload 915 3.46 - j1.76 2.39 + j3.92 Zsource = Test fixture impedance as measured from gate to gate, balanced configuration. Zload 50 Input Matching Network = Test fixture impedance as measured from drain to drain, balanced configuration. + -Zsource Device Under Test -- Output Matching Network 50 + Zload Figure 7. Narrowband Series Equivalent Source and Load Impedance - 915 MHz MRF13750H MRF13750HS RF Device Data NXP Semiconductors 9 PACKAGE DIMENSIONS MRF13750H MRF13750HS 10 RF Device Data NXP Semiconductors MRF13750H MRF13750HS RF Device Data NXP Semiconductors 11 MRF13750H MRF13750HS 12 RF Device Data NXP Semiconductors MRF13750H MRF13750HS RF Device Data NXP Semiconductors 13 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including "typicals," must be validated for each customer application by customer's technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2017 NXP B.V. MRF13750H MRF13750HS Document Number: Order from RF Marketing Rev. 1.0, 09/2017 14 RF Device Data NXP Semiconductors