MRF13750H MRF13750HS
1
RF Device Data
NXP Semiconductors
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 750 W CW transistors are designed for industrial, scientific and
medical (ISM) applications in the 700 to 1300 MHz frequency range. The
transistors are capable of CW or pulse power in narrowband operation.
Typical Performance: VDD =50Vdc
Frequency
(MHz) Signal Type
Pout
(W)
Gps
(dB)
D
(%)
915 (1) CW 750 19.3 67.1
915 (2) Pulse
(100 sec, 10% Duty Cycle)
850 20.4 71.0
1300 CW 700 18.0 56.0
Load Mismatch/Ruggedness
Frequency
(MHz) Signal Type VSWR
Pin
(W)
Test
Voltage Result
915 (2) Pulse
(100 sec, 20%
Duty Cycle)
> 10:1 at all
Phase
Angles
15.9 Peak
(3 dB
Overdrive)
50 No Device
Degradation
1. Measured in 915 MHz reference circuit (page 4).
2. Measured in 915 MHz narrowband production test fixture (page 7).
Features
Internally input matched for ease of use
Device can be used single--ended or in a push--pull configuration
Characterized for 30 to 50 V for ease of use
Suitable for linear applications with appropriate biasing
Integrated ESD protection
Recommended driver: MRFE6VS25GN (25 W)
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
915 MHz industrial heating/welding systems
1300 MHz particle accelerators
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
Document Number: Order from RF Marketing
Rev. 1.0, 09/2017
NXP Semiconductors
Preliminary Data
700–1300 MHz, 750 W CW, 50 V
RF POWER LDMOS TRANSISTORS
MRF13750H
MRF13750HS
(Top View)
Drain A
31
Figure 1. Pin Connections
42
Drain B
Gate A
Gate B
Note: Exposed backside of the package is
the source terminal for the transistor.
PREPRODUCTION
NI--1230H--4S
MRF13750H
NI--1230S--4S
MRF13750HS
2017 NXP B.V.
2
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +105 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 55, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature Range (1,2) TJ–40 to +225 C
Total Device Dissipation @ TC=25C
Derate above 25C
PDTBD
TBD
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
CW: Case Temperature TBDC, 750 W CW, 50 Vdc, IDQ(A+B) = TBD mA, 915 MHz
RJC TBD C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature TBDC, 750 W Peak, TBD sec Pulse Width,
TBD% Duty Cycle, 50 Vdc, IDQ(A+B) = TBD mA, 915 MHz
ZJC TBD C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) TBD, passes TBD V
Charge Device Model (per JESD22--C101) TBD, passes TBD V
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS = 105 Vdc, VGS =0Vdc)
IDSS — — 10 Adc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D=10A)
V(BR)DSS 105 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =55Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics
Gate Threshold Voltage (4)
(VDS =10Vdc,I
D= 275 Adc)
VGS(th) 1.3 1.9 2.3 Vdc
Gate Quiescent Voltage
(VDD =50Vdc,I
DQ(A+B) = 200 mAdc, Measured in Functional Test)
VGS(Q) 1.8 2.2 2.3 Vdc
Drain--Source On--Voltage (4)
(VGS =10Vdc,I
D=2.8Adc)
VDS(on) 0.1 0.21 0.6 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators. (Calculator available when part is in production.)
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
(continued)
MRF13750H MRF13750HS
3
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1) (In NXP Narrowband Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ(A+B) = 200 mA, Pout = 850 W Peak
(170 W Avg.), f = 915 MHz, 100 sec Pulse Width, 10% Duty Cycle
Power Gain Gps 19.0 20.4 22.0 dB
Drain Efficiency D66.0 71.0 — %
Table 5. Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) IDQ(A+B) = 200 mA
Frequency
(MHz) Signal Type VSWR
Pin
(W) Test Voltage, VDD Result
915 Pulse
(100 sec, 20% Duty Cycle)
> 10:1 at all
Phase Angles
15.9 Peak
(3 dB Overdrive)
50 No Device Degradation
1. Part internally input matched.
4
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
915 MHz REFERENCE CIRCUIT – 3.03.8(7.6 cm 9.7 cm)
Table 6. 915 MHz Performance (In NXP Reference Circuit, 50 ohm system)
VDD =50Vdc,I
DQ(A+B) = 150 mA, Pin =8.8W,T
C=25C
Frequency
(MHz)
Signal
Type
Pout
(W)
Gps
(dB)
D
(%)
915 CW 750 19.3 67.1
MRF13750H MRF13750HS
5
RF Device Data
NXP Semiconductors
915 MHz REFERENCE CIRCUIT – 3.03.8(7.6 cm 9.7 cm)
Figure 2. PRF13750H Reference Circuit Component Layout – 915 MHz
*C2, C3 and C4 are mounted vertically.
C5 C7
R1
R11
R2
C6 C8
R3
C15 R7
R6
R4
R5 U1
R9
R8
C14
C13 C11C9
C2*
C3*
C4*
C10 C12
R10
Q2
C1 Q1
Rev. 0D94455
Table 7. PRF13750H Reference Circuit Component Designations and Values – 915 MHz
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5, C6, C11, C12 47 pF Chip Capacitor ATC100B470JT500XT ATC
C7, C8, C15 1 F Chip Capacitor GRM21BR71H105KA12L Murata
C9, C10 1000 pF Chip Capacitor ATC100B102JT50XT ATC
C13, C14 470 F, 100 V Electrolytic Capacitor MCGPR100V477M16X32--RH Multicomp
Q1 RF Power LDMOS Transistor MRF13750H NXP
Q2 NPN Bipolar Transistor BC847ALT1G ON Semiconductor
R1, R2 10  1/4 W Chip Resistor CRCW120610R0JNEA Vishay
R3 5kMulti--turn Cermet Trimmer Potentiometer 3224W--1--502E Bourns
R4 20 k 1/10 W Chip Resistor RR1220P--203--B--T5 Susumu
R5 4.7 k 1/10 W Chip Resistor RR1220P--472--D Susumu
R6, R8 1.2 k 1/8 W Chip Resistor CRCW08051K20FKEA Vishay
R7 10  1/8 W Chip Resistor CRCW080510R0FKEA Vishay
R9 2.2 k 1/8 W Chip Resistor CRCW08052K20JNEA Vishay
R10 4.7 k 1/2 W Chip Resistor CRCW12104K70FKEA Vishay
R11 2 1/2 W Chip Resistor ERJ--14YJ2R0U Panasonic
U1 Voltage Regulator 5 V, Micro8 LP2951ACDMR2G ON Semiconductor
PCB Rogers TC600, 0.025”, r=6.15 D94455 MTL
6
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
TYPICAL CHARACTERISTICS – 915 MHz
REFERENCE CIRCUIT
Pin, INPUT POWER (WATTS)
16
0
Pout, OUTPUT POWER (WATTS)
624
900
0
VDD =50Vdc,I
DQ = 150 mA, f = 915 MHz
1081214
800
700
600
500
400
300
200
100
915 690 800
f
(MHz)
P1dB
(W)
P3dB
(W)
Figure 3. CW Output Power versus Input Power
20
18
16
Pout, OUTPUT POWER (WATTS)
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
19
17
21
0 100 200
80
70
60
50
40
30
20
22
90
23
D
Gps
VDD =50Vdc,I
DQ = 150 mA, f = 915 MHz
400
15
300 500 600 700 800 900
10
MRF13750H MRF13750HS
7
RF Device Data
NXP Semiconductors
915 MHz NARROWBAND PRODUCTION TEST FIXTURE – 4.06.0(10.2 cm 15.2 cm)
C20*
C21*
C16*
Figure 5. PRF13750H Narrowband Test Fixture Component Layout – 915 MHz
*C14, C15, C16, C17, C18, C19, C20 and C21 are mounted vertically.
C2
C17*
C23
C4 C6
C8
R2
C13 L2
C14* C15* C18*
C19*
C12 L1
C11
R1
C7
C1 C5
C3 C24
C25
C9
C10
B2
C22
C27 C29
C26 C28
B1
CUT OUT AREA
Rev. 0
D87851
Coax1
Coax2
Coax3
Coax4
Table 8. PRF13750H Narrowband Test Fixture Component Designations and Values – 915 MHz
Part Description Part Number Manufacturer
B1, B2 RF Bead, Short 2743019447 Fair--Rite
C1, C2 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C3, C4 2.2 F Chip Capacitor C1825C225J5RAC Kemet
C5, C6 0.1 F Chip Capacitor CDR33BX104AKWS AVX
C7, C8, C22, C23 36 pF Chip Capacitor ATC100B360JT500XT ATC
C9, C10 10 pF Chip Capacitor ATC100B100JT500XT ATC
C11 13 pF Chip Capacitor ATC100B130JT500XT ATC
C12, C13 12 pF Chip Capacitor ATC100B120JT500XT ATC
C14, C15 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC
C16, C17, C18, C19, C20, C21 36 pF Chip Capacitor ATC100B360JT500XT ATC
C24, C25 0.01 F Chip Capacitor C1825C103K1GAC--TU Kemet
C26, C27, C28, C29 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp
Coax1, 2, 3, 4 25 , Semi Rigid Coax, 2.2Shield Length UT--141C--25 Micro Coax
L1, L2 5 nH Inductor A02TKLC Coilcraft
R1, R2 10 , 3/4 W Chip Resistor CRCW201010R0FKEF Vishay
PCB Arlon, AD255A, 0.03,r=2.55 D87851 MTL
8
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
TYPICAL CHARACTERISTICS – 915 MHz
PRODUCTION TEST FIXTURE
D
16
21
0
80
70
60
50
40
30
20
22
18
17
19
20
Gps
915 867 978
f
(MHz)
P1dB
(W)
P3dB
(W)
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
100 200 300 400 500 800 900 11001000600 700
VDD =50Vdc,I
DQ = 200 mA, f = 915 MHz, Pulse Width = 100 sec
10% Duty Cycle
MRF13750H MRF13750HS
9
RF Device Data
NXP Semiconductors
915 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
MHz
Zsource
Zload
915 3.46 – j1.76 2.39 + j3.92
Zsource = Test fixture impedance as measured from
gate to gate, balanced configuration.
Zload = Test fixture impedance as measured from
drain to drain, balanced configuration.
Figure 7. Narrowband Series Equivalent Source and Load Impedance – 915 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
Zsource Zload
50
50
10
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
PACKAGE DIMENSIONS
MRF13750H MRF13750HS
11
RF Device Data
NXP Semiconductors
12
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
MRF13750H MRF13750HS
13
RF Device Data
NXP Semiconductors
14
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
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in this document. NXP reserves the right to make changes without further notice to any
products herein.
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including without limitation consequential or incidental damages. “Typical” parameters
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E2017 NXP B.V.
Document Number: Order from RF Marketing
Rev. 1.0, 09/2017