SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”
ISSUE 1 - NOVEMBER 1997 ✪
FEATURES:
•High current capability
•Low VF
APPLICATIONS:
•Mobile telecomms, PCMIA & SCSI
•DC-DC Conversion
PARTMARKING DETAILS : S16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage VR60 V
Forward Current IF900 mA
Forward Voltage @ IF = 1000mA(typ) VF600 mV
Average Peak Forward Current;D.C.= 50% IFAV 1600 mA
Non Repetitive Forward Current t≤100µs
t≤10ms
IFSM 12
5A
A
Power Dissipation at Tamb
=25°C P
tot 500 mW
Storage Temperature Range Tstg -55 to + 150 ° C
Junction Temperature Tj125 ° C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage V(BR)R 60 80 V IR=300µA
Forward Voltage VF245
275
330
395
455
510
620
280
320
390
470
530
600
740
mV
mV
mV
mV
mV
mV
mV
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
Reverse Current IR50 100 µAVR= 45V
Diode Capacitance CD17 pF f= 1MHz,VR=25V
Reverse Recovery
Time trr 12 ns switched from
IF = 500mA to IR =
500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle ≤2%
ZHCS1006
1
3
C
1
A
3
2
SOT23
0
75 125
1101000 60
0
060
VF- Forward Voltage (V)
IFv VF
1m
IF- Forward Current (A)IF(av) - Avg Fwd Cur (A)
0
TC - Case Temperature (°C)
IF(av) v TC
Ta- Ambient Temp (°C)
125
75
VR - Reverse Voltage (V)
Tav VR
IR- Reverse Current (A)
1n
VR- Reverse Voltage (V)
IRv VR
PF(av) - Avg Pwr Diss (W)
0
IF(av) - Avg Fwd Curr (A)
PF(av) v IF(av)
CD- Diode Capacitance (pF)
140
70
0
VR- Reverse Voltage (V)
CDv VR
-55°C
20 40
+25°C
+125°C
20 40
85 95 105 115
DC
D=0.5
D=0.2
D=0.1
D=0.05
100
p
t
1
t
1
D=t /t pIF(pk)
IF(av) =DxI F(pk)
Typical
Tj=125°C
F(av)
PF(av)
=I xV F
0.1 0.2 0.3 0.4 0.5 0.6
10m
100m
1
10
0.4 0.8 1.2
0.2
0.4
0.6
0.2
0.4
0.6
0.8
P
I
t1
F(pk )
=DxI
F(av)
=I
F(av)
F(av)
F
xV
F(pk )
p
t
/t
D=t 1I
p
10n
100n
1u
10u
100u
1m
10m
100m
1
+50°C
+25°C
+100°C
+125°C
-55°C
DC
D=0.5
D=0.2
D=0.1
D=0.05
Typical
Tj=125°C
Rth=100°C/W
Rth=200°C/W
Rth=300°C/W
TYPICAL CHARACTERISTICS
ZHCS1006
TYPICAL CHARACTERISTICS
ZHCS1006
TYPICAL CHARACTERISTICS
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
MAXIMUM TRANSIENT THERMAL RESISTANCE
