HZS-N Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply Features * Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.88V through 38.52V of zener voltage provide flexible application. * Suitable for 5mm-pitch high speed automatic insertion. Outline Type No. Ordering Information Cathode band Type No. Mark Package Code 1. Cathode HZS-N Series Type No. MHD 2. Anode Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Power dissipation Pg 400 mW Junction temperature T; 200 C Storage temperature T stg -55 to +175 C Electrical Characteristics (Ta = 25C) Zener Voltage Reverse Current Dynamic Resistance Vz (V)* Condition IA) Condition rg (Q) Condition Type Grade Min Max = Iz (mA) Max Vr (V) Max Iz (MA) HZS2.0N B1 1.88 2.10 5 120 0.5 100 5 B2 2.02 2.20 HZS2.2N B1 2.12 2.30 5 120 0.7 100 5 B29 2.22) .AT 120 1.0 100 5 HZS2.4N Bi 2.33 252 B2 2.43 2.63 * Tested with pulse (Fy =40ms). 198HZS-N Series Zener Voltage Reverse Current Dynamic Resistance V2 (V)* Condition Iq (uA) Condition rg ()_ Condition Type Grade Min Max _iz(mA) Max Vr (V) Max by (mA) HZS2.7N Bl 254 2.75 5 100 1.0 110 5 B2 2.69 2.91 HZS3.0N Bi 2.85 3.07 5 50 1.0 120 5 B2 3.01 3.22 HZS3.3N Bi 3.16 3.38 5 20 1.0 120 5 B2 3.32 3.53 HZS3.6N Bi 3.47 3.68 5 10 1.0 120 5 B2 3.62 3.83 HZS3.9N B1 3.77 3.98 5 5 1.0 120 5 B2 3.92 4.14 HZS4.3N Bi 4.05 4.26 5 5 1.0 120 5 B2 420 4.40 B3 4344.53 HZS47N Bl 447 465 5 5 1.0 1005 B2 459 4.77 B83 4.71 4.91 HZS5.1N Bil 485 5.0355 5 1.5 705 B2 497 5.18 B38 5.12 5.35 HZS56N Bl 529 552 5 5 2.5 40 5 B2 5.46 5.70 B3 5.64 5.88 Hzs6.2N Bi 581 606 5 5 3.0 305 B2 5.99 6.24 B3 6.16 6.40 HzS6.eN Bi 632 659 5 2 3.5 2 2~C*SS B2 652 6.79 B3 6.70 6.97 HZS75N Bt 688 7.19 5 05 4.0 2 8 B2 741 7.41 BI 7.33 7.64 HZS8.2N Bi 756 7.90 5 05 5.0 205 B2 7.82 8.15 B3 8.07 8.41 * Tasted with pulse (Py =40ms). 199HZS-N Series Zener Voltage Reverse Current Dynamie Resistance V2 (V)* ondition Iq(uA) Gordition g(a) Cetdition Type Grade Min Max ly (mA) Max Vr (V) Max ly (mA) HZS9.1N Bi 8.33 8.70 5 05 6.0 20 5 B2 8.61 8.99 B3 8.89 9.29 HZS10N Bt 9.19 959 5 0.2 7.0 20 5 B2 9.48 9.90 B3 9.82 10.30 HZS11N Bi 10.18 1063 5 0.2 8.0 20 5 B2 10.50 10.95 B3 10.82 11.26 HZS12N B1 14.13 1163 #5 0.2 9.0 25 5 B2 1150 11.92. B3. 11.80 ~:12.30 HZS13N B1 12.18 12.71 0.2 10 25 5 B2 1259 13.16 B3 13.03 13.62 HZS15N Bi 13.48 1409 0.2 1 25 5 B2 13.95 14.56 B3 14.42 15.02 HZS16N Bi 1487 15.50 5 0.2 12 25 5 Ba 15.33 15.96 B3 15.79 16.50 HZS18N B1 16.34 17.06 5 0.2 13 30 5 B2 16.90 17.67 B3 17.51 18.30 HZS20N B1 18.14 1896 5 0.2 15 30 5 B2 18.80 19.68 B3 19.52 20.45 HZS22N Bi 20.23 21.08 5 0.2 17 30 5 B2 20.76 21.65 B3 21.22 22.09 B4 21.68 22.61 * Tested with pulse (Py, =40ms). 200HZS-N Series Zener Voltage Reverse Current Dynamic Resistance Vz (V)* Fett sition Ip (WA) Eettaition rg (Q) Eaition Type Grade Min Max = lz (mA) Max Vr (V) Max HZS24N Bi 2226) 23.12 5 0.2 19 35 Ba. 22.75 23.73 B33 23.29 24.27 B4 23.81 24.81 HZS27N Bi 24.26 25.52 5 0.2 21 45 B2 24.97 26.26 B3 25.63 26.95 B4 26.29 27.64 HZS30N BI 26.99 = 28.39 5 0.2 23 55 B2 27.70 29.13 BI 28.36 29.82 B4 29.02 30.51 HZS33N- BI 29.68 ~ 31.22 5 0.2 25 65 B2 30.32 31.88 B3 30.90 32.50 B4 31.49 33.11 HZS36N Bi 32.14 33.79 5 0.2 27 75 B2 32.79 34.49 B38 33.40 35.13 B4 34.01 35.77 HZS39N Bi 34.68 36.47 5 0.2 30 85 B2. 35.36 37.19 B3 36.00 37.85 B4 36.63 38.52 * Tested with pulse (Py =40ms). Note: Type No. is as follows: HZS2.0NB1, HZS2.0NB2, * H7S39NB4. 201HZS-N Series Cc) Temperature Coefficient y, (%/C) zener Volt 10 a an Zener Current | (mA) 4 8 12 16 Zener Voltage V, (V) 20 24 Fig.1 Zener current Vs. 0.10 50 0.08 40 0.06 30 0.04 20 0.02 10 0 0 ~0.02 -10 0.04 ~20 0.06 -30 -0.08 -40 0.10 -50 0 5 0 15 20 2 35 40 Zener Voltage Vz (V) Fig.2 Temperature Coefficient Vs. Zener voltage Zener Vokage 28 32 36 40 Zener voltage 500 S > . 400 E_ \ | Printed circuit board xs 100*180x1.6t mm -W] \.__ Material: paper phenol 5 a @ & 300 \ |=5mm 3 8 NN = + 2 F \\ 6 a | |=10mm N g o (Publication value) = t : E 6 | | NX ea fo a 100 pt \ | N\ | 0 | L L 0 50 400 150 200 Ambient Temperature Ta (C) Fig.3 Power Dissipation Vs. Ambient Temperature 202