NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
Product specification 1997 Sept 29
INTEGRATED CIRCUITS
IC11 Data Handbook
Philips Semiconductors Product specification
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2
1997 Sept 29 853-0949 16639
DESCRIPTION
The 5532 is a dual high-performance low noise operational amplifier.
Compared to most of the standard operational amplifiers, such as
the 1458, it shows better noise performance, improved output drive
capability and considerably higher small-signal and power
bandwidths.
This makes the device especially suitable for application in
high-quality and professional audio equipment, instrumentation and
control circuits, and telephone channel amplifiers. The op amp is
internally compensated for gains equal to one. If very low noise is of
prime importance, it is recommended that the 5532A version be
used because it has guaranteed noise voltage specifications.
FEATURES
•Small-signal bandwidth: 10MHz
•Output drive capability: 600Ω, 10VRMS
•Input noise voltage: 5nVHz
(typical)
•DC voltage gain: 50000
•AC voltage gain: 2200 at 10kHz
•Power bandwidth: 140kHz
•Slew rate: 9V/µs
•Large supply voltage range: ±3 to ±20V
•Compensated for unity gain
PIN CONFIGURATIONS
FE, N, D8 Packages
D Package1
NOTE:
1. SOL and non-standard pinout.
7
6
54
3
2
1
B
A
V+
OUTPUT B
INVERTING INPUT B
NON-INVERTING INPUT B
OUTPUT A
INVERTING INPUT A
NON-INVERTING INPUT A
V-
TOP VIEW
–INA
+INA
NC
–VCC
NC
NC
+INB
–INB
NC
NC
NC
OUTA
1
2
3
4
5
6
7
89
10
11
12
13
14
16
15
+VCC
OUTB
NC
NC
TOP VIEW
SL00332
8
Figure 1. Pin Configurations
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Dual In-Line Package (DIP) 0 to 70°C NE5532N SOT97-1
8-Pin Plastic Dual In-Line Package (DIP) –40°C to +85°C SA5532N SOT97-1
8-Pin Plastic Dual In-Line Package (DIP) –40°C to +85°C SA5532AN SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) 0 to 70°C NE5532FE 0580A
8-Pin Plastic Dual In-Line Package (DIP) 0 to 70°C NE5532AN SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) 0 to 70°C NE5532AF 0580A
8-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C SE5532FE 0580A
8-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C SE5532AF 0580A
8-Pin Small Outline Package (SO) 0 to 70°C NE5532AD8 SOT96-1
8-Pin Small Outline Package (SO) –40°C to 85°C SA5532D8 SOT96-1
8-Pin Small Outline Package (SO) –40°C to 85°C SA5532AD8 SOT96-1
8-Pin Small Outline Package (SO) -55°C to +125°C SE5532AD8 SOT96-1
8-Pin Small Outline Package (SO) 0 to 70°C NE5532D8 SOT96-1
8-Pin Small Outline Package (SO) –40°C to 85°C SA5532D8 SOT96-1
8-Pin Small Outline Package (SO) –40°C to 85°C SA5532AD8 SOT96-1
8-Pin Small Outline Package (SO) -55°C to +125°C SE5532D8 SOT96-1
16-Pin Plastic Small Outline Large (SOL) Package 0 to 70°C NE5532D SOT162-1
16-Pin Plastic Dual In-Line Package (DIP) -55°C to +125°C SE5532N SOT38-4
Philips Semiconductors Product specification
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
1997 Sept 29 3
EQUIVALENT SCHEMATIC (EACH AMPLIFIER)
+
_
SL00333
Figure 2. Equivalent Schematic (Each Amplifier)
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNIT
VSSupply voltage ±22 V
VIN Input voltage ±VSUPPLY V
VDIFF Differential input voltage1±0.5 V
TAOperating temperature range
SA5532/A –40 to +85 °C
NE5532/A 0 to 70 °C
SE5532/A -55 to +125 °C
TSTG Storage temperature -65 to +150 °C
TJJunction temperature 150 °C
PDMaximum power dissipation,
TA=25°C (still-air)2
8 D8 package 780 mW
8 N package 1200 mW
8 FE package 1000 mW
16 D package 1200 mW
TSOLD Lead soldering temperature (10sec max) 300 °C
NOTES:
1. Diodes protect the inputs against over-voltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6V. Maximum current should be limited to ±10mA.
2. Thermal resistances of the above packages are as follows:
N package at 100°C/W
F package at 135°C/W
D package at 105°C/W
D8 package at 160°C/W
Philips Semiconductors Product specification
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
1997 Sept 29 4
DC ELECTRICAL CHARACTERISTICS
TA=25°C VS=±15V, unless otherwise specified. 1, 2, 3
SYMBOL
PARAMETER
TEST CONDITIONS
SE/5532/5532A NE/SA/5532/5532A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max Min Typ Max
UNIT
VOS Offset voltage 0.5 2 0.5 4 mV
Over temperature 3 5 mV
∆VOS/∆T 5 5 µV/°C
IOS Offset current 100 10 150 nA
Over temperature 200 200 nA
∆IOS/∆T 200 200 pA/°C
IBInput current 200 400 200 800 nA
Over temperature 700 1000 nA
∆IB/∆T 5 5 nA/°C
8 10.5 8 16 mA
ICC Supply current Over temperature 13 mA
VCM Common-mode input range ±12 ±13 ±12 ±13 V
CMRR Common-mode rejection ratio 80 100 70 100 dB
PSRR Power supply rejection ratio 10 50 10 100 µV/V
RL≥2kΩ, VO=±10V 50 100 25 100 V/mV
AVOL
Large
-
signal voltage gain
Over temperature 25 15 V/mV
AVOL
Large-signal
voltage
gain
RL≥600Ω, VO=±10V 40 50 15 50 V/mV
Over temperature 20 10 V/mV
RL≥600Ω±12 ±13 ±12 ±13
Over temperature ±10 ±12 ±10 ±12
VOUT
Out
p
ut swing
RL≥600Ω, VS=±18V ±15 ±16 ±15 ±16
V
VOUT
Out ut
swing
Over temperature ±12 ±14 ±12 ±14
V
RL≥2kΩ±13 ±13.5 ±13 ±13.5
Over temperature ±12 ±12.5 ±10 ±12.5
RIN Input resistance 30 300 30 300 kΩ
ISC Output short circuit current 10 38 60 10 38 60 mA
NOTES:
1. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6V. Maximum current should be limited to ±10mA.
2. For operation at elevated temperature, derate packages based on the package thermal resistance.
3. Output may be shorted to ground at VS=±15V, TA=25°C Temperature and/or supply voltages must be limited to ensure dissipation rating is
not exceeded.
AC ELECTRICAL CHARACTERISTICS
TA=25°C VS=±15V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SA/SE5532/5532A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max
UNIT
ROUT Output resistance AV=30dB Closed-loop
f=10kHz, RL=600Ω0.3 Ω
Voltage-follower
Overshoot VIN=100mVP-P 10 %
CL=100pF, RL=600Ω
AVGain f=10kHz 2.2 V/mV
GBW Gain bandwidth product CL=100pF, RL=600Ω10 MHz
SR Slew rate 9 V/µs
VOUT=±10V 140 kHz
Power bandwidth VOUT=±14V, RL=600Ω, 100 kHz
VCC=±18V
Philips Semiconductors Product specification
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
1997 Sept 29 5
ELECTRICAL CHARACTERISTICS
TA=25°C VS=±15V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SE5532 NE/SA/SE5532A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max Min Typ Max
UNIT
VNOISE Input noise voltage fO=30Hz 8 8 12 nV/√Hz
fO=1kHz 5 5 6 nV/√Hz
INOISE Input noise current fO=30Hz 2.7 2.7 pA/√Hz
fO=1kHz 0.7 0.7 pA/√Hz
Channel separation f=1kHz, RS=5kΩ110 110 dB
TYPICAL PERFORMANCE CHARACTERISTICS
GAIN (dB)
GAIN (dB)
TYPICAL VALUES
10 102103104105106107
120
80
40
0
-40
f (Hz)
VS = +15V VS = +15V TYPICAL VALUES
80
60
40
20
0
-55 -25 0 25 50 75 100 +125 -55 -25 0 25 50 75 100 +125
1,4
1,2
0,8
0,4
0
30
20
10
001020
TA (oC)
TYP
IO
(mA) II
(mA) VIN (V)
Vp; -VN (V)
Open-Loop Frequency
Response
Output Short-Circuit Current Input Bias Current Input Commom-Mode
Voltage Range
TYPICAL VALUES
60
40
20
0
-20103104105106107108
f (Hz)
RF = 10kΩ; RE = 100Ω
RF = 9kΩ; RE = 1kΩ
RF = 1kΩ; RE = ∞
Closed-Loop Frequency
Response
VS = +15V
TYPICAL VALUES
102103104105106107
40
30
20
10
0
f (Hz)
(V)
Vo(p-p)
Large-Signal Frequency
Response
(nV
Hz
)
IO = 0
010 20
0
2
4
610–2
10
1
10–1
10–2 10 102103104
f (Hz)
TYP
TYP
IP
IN
(mA)
Vp; -VN (V)
Supply Current Input Noise Voltage Density
TA (oC)
SL00334
Figure 3. Typical Performance Characteristics
Philips Semiconductors Product specification
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
1997 Sept 29 6
TEST CIRCUITS
Closed-Loop Frequency Response Voltage-Follower
+
–
5532 (1/2)
100pF
RS
VIRE
RF
800Ω
25Ω
+
–
5532
VIN
1k
VOUT
100pF 600Ω
V+
V–
SL00335
Figure 4. Test Circuits
Internally-compensated dual low noise operational
amplifier
Philips Semiconductors Product specification
NE/SA/SE5532/5532A
1997 Sept 29 7
DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1
Internally-compensated dual low noise operational
amplifier
Philips Semiconductors Product specification
NE/SA/SE5532/5532A
1997 Sept 29 8
0580A 8-PIN (300 mils wide) CERAMIC DUAL IN-LINE (F) PACKAGE
NOTES:
1. Controlling dimension: Inches. Millimeters are
2. Dimension and tolerancing per ANSI Y14. 5M-1982.
3. “T”, “D”, and “E” are reference datums on the body
4. These dimensions measured with the leads
5. Pin numbers start with Pin #1 and continue
and include allowance for glass overrun and meniscus
on the seal line, and lid to base mismatch.
constrained to be perpendicular to plane T.
counterclockwise to Pin #8 when viewed
shown in parentheses.
from the top.
0.200 (5.08)
0.010 (0.254)TED
0.023 (0.58)
0.015 (0.38)
0.165 (4.19)
0.125 (3.18)
0.165 (4.19)
0.175 (4.45)
0.145 (3.68)
0.320 (8.13)
0.290 (7.37)
(NOTE 4)
BSC
0.300 (7.62)
0.395 (10.03)
0.300 (7.62)
(NOTE 4)
0.015 (0.38)
0.010 (0.25)
0.035 (0.89)
0.020 (0.51)
– D –
PIN # 1
– E – 0.303 (7.70)
0.245 (6.22)
0.100 (2.54) BSC
0.408 (10.36)
0.376 (9.55)
0.055 (1.40)
0.030 (0.76)
– T –
SEATING
PLANE
0.070 (1.78)
0.050 (1.27)
0.055 (1.40)
0.030 (0.76)
853–0580A 006688
Internally-compensated dual low noise operational
amplifier
Philips Semiconductors Product specification
NE/SA/SE5532/5532A
1997 Sept 29 9
SO8: plastic small outline package; 8 leads; body width 3.9mm SOT96-1
Internally-compensated dual low noise operational
amplifier
Philips Semiconductors Product specification
NE/SA/SE5532/5532A
1997 Sept 29 10
SO16: plastic small outline package; 16 leads; body width 7.5 mm SOT162-1
Internally-compensated dual low noise operational
amplifier
Philips Semiconductors Product specification
NE/SA/SE5532/5532A
1997 Sept 29 11
DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4
Internally-compensated dual low noise operational
amplifier
Philips Semiconductors Product specification
NE/SA/SE5532/5532A
1997 Sept 29 12
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appl iances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
DEFINITIONS
Data Sheet Identification Product Status Definition
Objective Specification
Preliminary Specification
Product Specification
Formative or in Design
Preproduction Product
Full Production
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Copyright Philips Electronics North America Corporation 1997
All rights reserved. Printed in U.S.A.
print code Date of release: 04–96
Document order number: 9397 750 01699
