DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3919 TO-251 (MP-3) 2SK3919-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. (TO-251) FEATURES * Low on-state resistance RDS(on)1 = 5.6 m MAX. (VGS = 10 V, ID = 32 A) * Low Ciss: Ciss = 2050 pF TYP. * 5 V drive available ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 25 V Gate to Source Voltage (VDS = 0 V) VGSS 20 V Drain Current (DC) (TC = 25C) ID(DC) 64 A ID(pulse) 256 A Total Power Dissipation (TC = 25C) PT1 36 W Total Power Dissipation PT2 1.0 W Channel Temperature Tch 150 C Drain Current (pulse) Note1 Tstg -55 to +150 C Single Avalanche Current Note2 IAS 27 A Single Avalanche Energy Note2 EAS 73 mJ Storage Temperature (TO-252) Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 12.5 V, RG = 25 , VGS = 20 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17078EJ2V0DS00 (2nd edition) Date Published September 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2004 2SK3919 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 100 nA VGS(off) VDS = 10 V, ID = 1 mA 2.0 2.5 3.0 V | yfs | VDS = 10 V, ID = 16 A 9.7 19 RDS(on)1 VGS = 10 V, ID = 32 A 4.5 5.6 m RDS(on)2 VGS = 5.0 V, ID = 16 A 6.8 13.7 m Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 2050 pF Output Capacitance Coss VGS = 0 V 460 pF Reverse Transfer Capacitance Crss f = 1 MHz 330 pF Turn-on Delay Time td(on) VDD = 12.5 V, ID = 32 A 16 ns tr VGS = 10 V 19 ns td(off) RG = 10 53 ns 22 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 20 V 42 nC Gate to Source Charge QGS VGS = 10 V 8 nC QGD ID = 64 A 15 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 64 A, VGS = 0 V 0.97 V Reverse Recovery Time trr IF = 64 A, VGS = 0 V 23 ns Reverse Recovery Charge Qrr di/dt = 100 A/s 11 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch = 1 s Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet D17078EJ2V0DS td(on) tr ton td(off) tf toff 2SK3919 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 40 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 35 30 25 20 15 10 5 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - C 50 75 100 125 150 175 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000 PW = 100 s ID(DC) 100 RDS(on) Limited (at VGS = 10 V) 10 Power Dissipation Limited 1 1 ms 10 ms TC = 25C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A ID(pulse) 1000 Rth(ch-A) = 125C/W 100 10 Rth(ch-C) = 3.47C/W 1 0.1 Single pulse 0.01 100 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet D17078EJ2V0DS 10 100 1000 3 2SK3919 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 300 1000 ID - Drain Current - A ID - Drain Current - A 250 VGS = 10 V 200 150 100 5.0 V 100 Tch = -55C 25C 75C 125C 150C 10 1 0.1 50 VDS = 10 V Pulsed Pulsed 0 0.01 0 0.5 1 1.5 2 2.5 0 VDS - Drain to Source Voltage - V 2 1 RDS(on) - Drain to Source On-state Resistance - m 50 100 150 | yfs | - Forward Transfer Admittance - S 3 100 5 6 1 VDS = 10 V Pulsed 0.1 0.1 1 10 100 Tch - Channel Temperature - C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 15 Pulsed 10 VGS = 5.0 V 5 10 V 0 1 10 100 1000 15 Pulsed 10 ID - Drain Current - A 4 4 Tch = -55C 25C 75C 125C 150C 10 200 RDS(on) - Drain to Source On-state Resistance - m VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA 0 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 -50 2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0 -100 1 ID = 32 A 5 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D17078EJ2V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 10 8 VGS = 10 V 4 2 ID = 32 A Pulsed 0 -100 -50 0 50 100 150 Ciss 1000 Coss VGS = 0 V f = 1 MHz 100 0.01 200 SWITCHING CHARACTERISTICS td(off) tf tr VDD = 12.5 V VGS = 10 V RG = 10 1 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 30 10 10 ID = 64 A, 42 A (at VDD = 5 V) 25 1 100 20 15 10 8 6 VGS 4 10 5 100 12 10 VDD = 20 V 12.5 V 5V 2 VDS 0 0 0.1 0 ID - Drain Current - A 20 40 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 1000 VGS = 10 V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 td(on) 0.1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - C 100 Crss 100 10 0V 1 0.1 di/dt = 100 A/s VGS = 0 V 100 10 Pulsed 0.01 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 1 10 100 IF - Diode Forward Current - A Data Sheet D17078EJ2V0DS 5 VGS - Gate to Source Voltage - V 6 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - m 2SK3919 2SK3919 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 27 A EAS = 73 mJ 10 VDD = 12.5 V RG = 25 VGS = 20 0 V Starting Tch = 25C 1 0.01 80 60 40 20 0 0.1 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C L - Inductive Load - mH 6 VDD = 12.5 V RG = 25 VGS = 20 0 V IAS 27 A 100 Data Sheet D17078EJ2V0DS 2SK3919 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) 2) TO-252 (MP-3ZK) 2.3 0.1 0.5 0.1 6.1 0.2 1 2 1.14 MAX. 1.02 TYP. 2.3 TYP. 3 No Plating 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0 to 0.25 0.50.1 0.750.12 2.3 0.5 0.1 0.76 0.1 2.3 TYP. No Plating 0.51 MIN. 4.0 MIN. No Plating 9.3 TYP. 1.14 MAX. 16.1 TYP. 3 1.8 0.2 2 0.50.1 4 0.8 4.0 MIN. 1 2.30.1 1.0 TYP. 6.50.2 5.1 TYP. 4.3 MIN. 4 6.10.2 10.3 MAX. (9.8 TYP.) Mold Area 0.7 TYP. 6.6 0.2 5.3 TYP. 4.3 MIN. 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D17078EJ2V0DS 7 2SK3919 * The information in this document is current as of September, 2004. The information is subject to change without notice. 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