Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC337 BC338 Unit
Collector–Emitter Voltage VCEO 45 25 Vdc
Collector–Base Voltage VCBO 50 30 Vdc
Emitter–Base V oltage VEBO 5.0 Vdc
Collector Current – Continuous IC800 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watt
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 200 °C/W
Thermal Resistance, Junction to Case RJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, IB = 0) BC337
BC338
V(BR)CEO 45
25
Vdc
Collector–Emitter Breakdown Voltage
(IC = 100 µA, IE = 0) BC337
BC338
V(BR)CES 50
30
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 A, IC = 0) V(BR)EBO 5.0 Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0) BC337
(VCB = 20 V, IE = 0) BC338
ICBO
100
100
nAdc
Collector Cutoff Current
(VCE = 45 V, VBE = 0) BC337
(VCE = 25 V, VBE = 0) BC338
ICES
100
100
nAdc
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0) IEBO 100 nAdc
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 2 1Publication Order Number:
BC337/D
BC337,
BC337-16,
BC337-25,
BC337-40,
BC338-25
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
123
COLLECTOR
1
2
BASE
3
EMITTER
BC337, BC337–16, BC337–25, BC337–40, BC338–25
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V) BC337
BC337–16
BC337–25/BC338–25
BC337–40
(IC = 300 mA, VCE = 1.0 V)
hFE 100
100
160
250
60
630
250
400
630
Base–Emitter On Voltage
(IC = 300 mA, VCE = 1.0 V) VBE(on) 1.2 Vdc
Collector–Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA) VCE(sat) 0.7 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz) Cob 15 pF
Current–Gain – Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT 210 MHz
Figure 1. Thermal Response
t, TIME (SECONDS)
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
θJC(t) = (t) θJC
θJC = 100°C/W MAX
θJA(t) = r(t) θJA
θJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
SINGLE PULSE
BC337, BC337–16, BC337–25, BC337–40, BC338–25
http://onsemi.com
3
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms1.0 s TJ = 135°C
TA = 25°C
TC = 25°C
dc
dc
(APPLIES BELOW RATED VCEO)
1000
10
1001.0 3.0 10 30
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Active Region – Safe Operating Area
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
100
1000
10
10000.1 10 100
100
1.0
TJ = 135°C
100 µs
VCE = 1 V
TJ = 25°C
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
0.1 11 10 100 1000
-2
-1
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
1.0
0.8
0.6
0.4
0.2
0
1 10 1000100
10 100
TJ = 25°C
IC = 10 mA
TA = 25°CVBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
VCE(sat) @ IC/IB = 10
θVC for VCE(sat)
θVB for VBE
Cob
Cib
100 mA 300 mA 500 mA
BC337, BC337–16, BC337–25, BC337–40, BC338–25
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
BC337/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
N. American Technical Support: 800–282–9855 Toll Free USA/Canada