IRF520NS/L
HEXFET® Power MOSFET
PD -91340A
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520NL) is available for low-profile applications.
S
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Description
5/13/98
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.1
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** – – – 4 0
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V9.7
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V6.8 A
IDM Pulsed Drain Current 38
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 91 mJ
IAR Avalanche Current5.7 A
EAR Repetitive Avalanche Energy4.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
lAdvanced Process Technology
lSurface Mount (IRF520NS)
lLow-profile through-hole (IRF520NL)
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
2
D P a k
TO-262
VDSS = 100V
RDS(on) = 0.20Ω
ID = 9.7A
IRF520NS/L
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 10 0 –– – –– – V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.20 ΩVGS = 10V, ID = 5.7A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 2.7 ––– ––– S VDS = 25V, ID = 5.7A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge –– – – – – 25 ID = 5.7A
Qgs Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 4.5 ––– VDD = 50V
trRise Time ––– 23 ––– ID = 5.7A
td(off) Turn-Off Delay Time ––– 32 ––– RG = 22Ω
tfFall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10
Between lead,
––– ––– and center of die contact
Ciss Input Capacitance ––– 330 ––– VGS = 0V
Coss Output Capacitance ––– 92 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS Drain-to-Source Leakage Current
nH
7.5
LSInternal Source Inductance
VDD = 25V, starting TJ = 25°C, L = 4.7mH
RG = 25Ω, IAS = 5.7A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF520N data and test conditions
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– – –– 1.3 V TJ = 25°C, IS = 5.7A, VGS = 0V
trr Reverse Recovery Time ––– 99 150 n s T J = 25°C, IF = 5.7A
Qrr Reverse RecoveryCharge ––– 3 90 580 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
S
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A
9.7
38
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
IRF520NS/L
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
10
100
0.1 1 10 100
I , Dra in-to -S o urc e C u rre n t (A )
D
V , Dr a in-t o-So u rc e V olta
g
e
(
V
)
DS
V G S
T OP 1 5V
10 V
8. 0V
7. 0V
6. 0V
5. 5V
5. 0V
BO TTOM 4.5V
20
µ
s PULS E WIDTH
T = 25°C
C
A
4.5V
1
10
100
0.1 1 10 100
4.5V
I , D rain-to-Source Current (A )
D
V , Dr a in-t o-So u rc e V olta
g
e
(
V
)
DS
VGS
TOP 15V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
BOTTOM 4.5V
20
µ
s P ULSE WIDTH
T = 17 5°C
C
A
1
10
100
45678910
T = 25°C
J
GS
V , G ate -to -So u rce V oltag e (V )
D
I , D rain -to- So urce Curren t (A )
V = 50 V
20µs PULSE WIDTH
DS
T = 175°C
J
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Tem perature (°C)
R , D ra in-to -S o u rc e O n R e s is ta nc e
DS(on)
(Normalized)
V = 1 0 V
GS
A
I = 9 .5A
D
IRF520NS/L
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
100
200
300
400
500
600
1 10 100
C , Capacitance (pF)
DS
V , Dr ain -to -So ur c e V o lta
g
e
(
V
)
A
V = 0 V , f = 1MHz
C = C + C , C S H O RT E D
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25
Q , T ota l Ga te C h a r
g
e
(
nC
)
G
V , Ga te -to- S ou r c e V o lta ge (V)
GS
V = 8 0 V
V = 5 0 V
V = 2 0 V
DS
DS
DS
A
FOR TEST CIRCUIT
SE E F IG U R E 1 3
I = 5 . 7 A
D
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 2 5°C
J
V = 0 V
GS
V , S ourc e-to-Drain Voltage (V)
I , R e ve rs e D r ain C u rre n t (A )
SD
SD
A
T = 17 5°C
J
0.1
1
10
100
1 10 100 1000
V , Dr a in-t o-So u rc e V olta
g
e
(
V
)
DS
I , Drain Current (A)
OPERATION I N T HIS AREA L I MI T E D
B Y R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25 °C
T = 17 5 °C
Sin
g
le Pul s e
C
J
IRF520NS/L
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
25 50 75 100 125 150 175
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF520NS/L
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
0
40
80
120
160
200
25 50 75 100 125 150 175
J
E , Sing le Pul s e Av a lan c h e E ne rg y ( mJ )
AS
A
Startin
g
T , Junction Tem perature
(
°C
)
V = 2 5 V
I
T O P 2 .3 A
4.0 A
B OTTO M 5.7A
DD
D
IRF520NS/L
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF520NS/L
D2Pak Package Outline
D2Pak
Part Marking Information
10.16 (.400)
R EF.
6.47 (.255 )
6.18 (.243 )
2.61 (.1 0 3 )
2.32 (.0 9 1 )
8.89 (.350)
REF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5 .28 (.208)
4 .78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15 .4 9 (.6 10)
14 .7 3 (.5 80)
3X 0.93 (.037)
0.69 (.027)
5 .08 (.200)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX .
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLE RANCING PE R ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.2 5 ( .0 10) M B A M MINIMUM RECOMMENDED F OOTPRINT
11.43 (.450)
8.89 (.3 5 0 )
17 .78 (.700)
3.81 (.150)
2. 08 (.082)
2X
LEAD ASSIGNMENTS
1 - GATE
2 - DRA IN
3 - SOUR CE
2.54 (.100)
2X
PAR T N UM BER
INTERNATIONAL
RE CTIFIE R
LO GO DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
A S SEMBLY
LO T CO D E
F530S
9B 1 M
9246
A
IRF520NS/L
Package Outline
TO-262 Outline
TO-262
Part Marking Information
IRF520NS/L
Tape & Reel Information
D2Pak
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
3
4
4
TRR
FE ED D IRE CTION
1.85 (.0 73)
1.65 (.0 65)
1.60 (.0 63)
1.50 (.0 59)
4.10 (.161)
3.90 (.153)
TRL
FE ED D IRE CTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
1 1.60 (.457)
1 1.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13 .5 0 (.53 2)
12 .8 0 (.50 4)
330.00
(14.173)
MAX.
27 .40 ( 1.079)
23 .90 ( .941)
60.00 (2.362)
M IN .
30 .40 (1.19 7)
M A X .
26 .40 (1.03 9)
24 .40 (.9 61)
NOT ES :
1. CO M F O RM S TO EIA-4 18.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIM ENSION M EASURED @ HUB.
4. INCLUDES FLAN GE DISTORTION @ OUTER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
