STM32F427xx STM32F429xx 32b Arm(R) Cortex(R)-M4 MCU+FPU, 225DMIPS, up to 2MB Flash/256+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 com. interfaces, camera & LCD-TFT Datasheet - production data Features * Core: Arm(R) 32-bit Cortex(R)-M4 CPU with FPU, Adaptive real-time accelerator (ART AcceleratorTM) allowing 0-wait state execution from Flash memory, frequency up to 180 MHz, MPU, 225 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions * Memories - Up to 2 MB of Flash memory organized into two banks allowing read-while-write - Up to 256+4 KB of SRAM including 64-KB of CCM (core coupled memory) data RAM - Flexible external memory controller with up to 32-bit data bus: SRAM, PSRAM, SDRAM/LPSDR SDRAM, Compact Flash/NOR/NAND memories * LCD parallel interface, 8080/6800 modes * LCD-TFT controller with fully programmable resolution (total width up to 4096 pixels, total height up to 2048 lines and pixel clock up to 83 MHz) * Chrom-ART AcceleratorTM for enhanced graphic content creation (DMA2D) * Clock, reset and supply management - 1.7 V to 3.6 V application supply and I/Os - POR, PDR, PVD and BOR - 4-to-26 MHz crystal oscillator - Internal 16 MHz factory-trimmed RC (1% accuracy) - 32 kHz oscillator for RTC with calibration - Internal 32 kHz RC with calibration * Low power - Sleep, Stop and Standby modes - VBAT supply for RTC, 20x32 bit backup registers + optional 4 KB backup SRAM * 3x12-bit, 2.4 MSPS ADC: up to 24 channels and 7.2 MSPS in triple interleaved mode * 2x12-bit D/A converters * General-purpose DMA: 16-stream DMA controller with FIFOs and burst support * Up to 17 timers: up to twelve 16-bit and two 32bit timers up to 180 MHz, each with up to 4 IC/OC/PWM or pulse counter and quadrature (incremental) encoder input January 2018 This is information on a product in full production. &"'! LQFP100 (14 x 14 mm) UFBGA176 (10 x 10 mm) LQFP144 (20 x 20 mm) UFBGA169 (7 x 7 mm) LQFP176 (24 x 24 mm) TFBGA216 (13 x 13 mm) LQFP208 (28 x 28 mm) WLCSP143 * Debug mode - SWD & JTAG interfaces - Cortex-M4 Trace MacrocellTM * Up to 168 I/O ports with interrupt capability - Up to 164 fast I/Os up to 90 MHz - Up to 166 5 V-tolerant I/Os * Up to 21 communication interfaces - Up to 3 x I2C interfaces (SMBus/PMBus) - Up to 4 USARTs/4 UARTs (11.25 Mbit/s, ISO7816 interface, LIN, IrDA, modem control) - Up to 6 SPIs (45 Mbits/s), 2 with muxed full-duplex I2S for audio class accuracy via internal audio PLL or external clock - 1 x SAI (serial audio interface) - 2 x CAN (2.0B Active) and SDIO interface * Advanced connectivity - USB 2.0 full-speed device/host/OTG controller with on-chip PHY - USB 2.0 high-speed/full-speed device/host/OTG controller with dedicated DMA, on-chip full-speed PHY and ULPI - 10/100 Ethernet MAC with dedicated DMA: supports IEEE 1588v2 hardware, MII/RMII * 8- to 14-bit parallel camera interface up to 54 Mbytes/s * True random number generator * CRC calculation unit * RTC: subsecond accuracy, hardware calendar * 96-bit unique ID DocID024030 Rev 10 1/239 www.st.com STM32F427xx STM32F429xx Table 1. Device summary Reference Part number STM32F427xx STM32F427VG, STM32F427ZG, STM32F427IG, STM32F427AG, STM32F427VI, STM32F427ZI, STM32F427II, STM32F427AI STM32F429VG, STM32F429ZG, STM32F429IG, STM32F429BG, STM32F429NG, STM32F429AG, STM32F429VI, STM32F429ZI, STM32F429II,, STM32F429BI, STM32F429xx STM32F429NI,STM32F429AI, STM32F429VE, STM32F429ZE, STM32F429IE, STM32F429BE, STM32F429NE 2/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Contents Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.1 3 Full compatibility throughout the family . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.1 Arm(R) Cortex(R)-M4 with FPU and embedded Flash and SRAM . . . . . . . . 21 3.2 Adaptive real-time memory accelerator (ART AcceleratorTM) . . . . . . . . . 21 3.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.4 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3.5 CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . . 22 3.6 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3.7 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3.8 DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.9 Flexible memory controller (FMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.10 LCD-TFT controller (available only on STM32F429xx) . . . . . . . . . . . . . . 24 3.11 Chrom-ART AcceleratorTM (DMA2D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.12 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . 25 3.13 External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.14 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.15 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.16 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.17 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.18 3.17.1 Internal reset ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.17.2 Internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 3.18.1 Regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 3.18.2 Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 3.18.3 Regulator ON/OFF and internal reset ON/OFF availability . . . . . . . . . . 32 3.19 Real-time clock (RTC), backup SRAM and backup registers . . . . . . . . . . 32 3.20 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 3.21 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 DocID024030 Rev 10 3/239 6 Contents STM32F427xx STM32F429xx 3.22 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 3.22.1 Advanced-control timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . 36 3.22.2 General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 3.22.3 Basic timers TIM6 and TIM7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 3.22.4 Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 3.22.5 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 3.22.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 3.23 Inter-integrated circuit interface ( I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 3.24 Universal synchronous/asynchronous receiver transmitters (USART) . . 37 3.25 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 3.26 Inter-integrated sound (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 3.27 Serial Audio interface (SAI1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 3.28 Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 3.29 Audio and LCD PLL(PLLSAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 3.30 Secure digital input/output interface (SDIO) . . . . . . . . . . . . . . . . . . . . . . . 40 3.31 Ethernet MAC interface with dedicated DMA and IEEE 1588 support . . . 40 3.32 Controller area network (bxCAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 3.33 Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . . 41 3.34 Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . . . 41 3.35 Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 3.36 Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 3.37 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 42 3.38 Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 3.39 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 3.40 Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 3.41 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . 43 3.42 Embedded Trace MacrocellTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 4 Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 6.1.1 4/239 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 DocID024030 Rev 10 STM32F427xx STM32F429xx Contents 6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 6.3.2 VCAP1/VCAP2 external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 6.3.3 Operating conditions at power-up / power-down (regulator ON) . . . . . . 98 6.3.4 Operating conditions at power-up / power-down (regulator OFF) . . . . . 98 6.3.5 Reset and power control block characteristics . . . . . . . . . . . . . . . . . . . 99 6.3.6 Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 100 6.3.7 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 6.3.8 Wakeup time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . 117 6.3.9 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 118 6.3.10 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 122 6.3.11 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124 6.3.12 PLL spread spectrum clock generation (SSCG) characteristics . . . . . 127 6.3.13 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 6.3.14 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 6.3.15 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . 133 6.3.16 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 6.3.17 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135 6.3.18 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141 6.3.19 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142 6.3.20 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142 6.3.21 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157 6.3.22 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6.3.23 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6.3.24 Reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6.3.25 DAC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 6.3.26 FMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168 6.3.27 Camera interface (DCMI) timing specifications . . . . . . . . . . . . . . . . . . 193 6.3.28 LCD-TFT controller (LTDC) characteristics . . . . . . . . . . . . . . . . . . . . . 194 6.3.29 SD/SDIO MMC card host interface (SDIO) characteristics . . . . . . . . . 196 DocID024030 Rev 10 5/239 6 Contents STM32F427xx STM32F429xx 6.3.30 7 8 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198 7.1 LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198 7.2 WLCSP143 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202 7.3 LQFP144 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205 7.4 LQFP176 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209 7.5 LQFP208 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213 7.6 UFBGA169 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217 7.7 UFBGA176+25 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . 220 7.8 TFBGA216 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223 7.9 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226 Appendix A Recommendations when using internal reset OFF . . . . . . . . . . . 227 A.1 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227 Appendix B Application block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228 9 6/239 B.1 USB OTG full speed (FS) interface solutions . . . . . . . . . . . . . . . . . . . . . 228 B.2 USB OTG high speed (HS) interface solutions . . . . . . . . . . . . . . . . . . . . 230 B.3 Ethernet interface solutions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233 DocID024030 Rev 10 STM32F427xx STM32F429xx List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. Table 28. Table 29. Table 30. Table 31. Table 32. Table 33. Table 34. Table 35. Table 36. Table 37. Table 38. Table 39. Table 40. Table 41. Table 42. Table 43. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 STM32F427xx and STM32F429xx features and peripheral counts . . . . . . . . . . . . . . . . . . 16 Voltage regulator configuration mode versus device operating mode . . . . . . . . . . . . . . . . 29 Regulator ON/OFF and internal reset ON/OFF availability. . . . . . . . . . . . . . . . . . . . . . . . . 32 Voltage regulator modes in stop mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Comparison of I2C analog and digital filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 USART feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 STM32F427xx and STM32F429xx pin and ball definitions . . . . . . . . . . . . . . . . . . . . . . . . 53 FMC pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 STM32F427xx and STM32F429xx alternate function mapping . . . . . . . . . . . . . . . . . . . . . 75 STM32F427xx and STM32F429xx register boundary addresses. . . . . . . . . . . . . . . . . . . . 87 Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . . 97 VCAP1/VCAP2 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 Operating conditions at power-up / power-down (regulator ON) . . . . . . . . . . . . . . . . . . . . 98 Operating conditions at power-up / power-down (regulator OFF). . . . . . . . . . . . . . . . . . . . 98 reset and power control block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator enabled except prefetch) or RAM . . . . . . 102 Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator disabled) . . . . . . . . . . . . . . . . . . . . . . . . . 103 Typical and maximum current consumption in Sleep mode . . . . . . . . . . . . . . . . . . . . . . . 104 Typical and maximum current consumptions in Stop mode . . . . . . . . . . . . . . . . . . . . . . . 105 Typical and maximum current consumptions in Standby mode . . . . . . . . . . . . . . . . . . . . 106 Typical and maximum current consumptions in VBAT mode. . . . . . . . . . . . . . . . . . . . . . . 106 Typical current consumption in Run mode, code with data processing running from Flash memory or RAM, regulator ON (ART accelerator enabled except prefetch), VDD=1.7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 Typical current consumption in Run mode, code with data processing running from Flash memory, regulator OFF (ART accelerator enabled except prefetch). . . . . . . 109 Typical current consumption in Sleep mode, regulator ON, VDD=1.7 V . . . . . . . . . . . . . 110 Tyical current consumption in Sleep mode, regulator OFF. . . . . . . . . . . . . . . . . . . . . . . . 111 Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 HSE 4-26 MHz oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 Main PLL characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124 DocID024030 Rev 10 7/239 9 List of tables Table 44. Table 45. Table 46. Table 47. Table 48. Table 49. Table 50. Table 51. Table 52. Table 53. Table 54. Table 55. Table 56. Table 57. Table 58. Table 59. Table 60. Table 61. Table 62. Table 63. Table 64. Table 65. Table 66. Table 67. Table 68. Table 69. Table 70. Table 71. Table 72. Table 73. Table 74. Table 75. Table 76. Table 77. Table 78. Table 79. Table 80. Table 81. Table 82. Table 83. Table 84. Table 85. Table 86. Table 87. Table 88. Table 89. Table 90. Table 91. Table 92. 8/239 STM32F427xx STM32F429xx PLLI2S (audio PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 PLLISAI (audio and LCD-TFT PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126 SSCG parameters constraint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 Flash memory programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 Flash memory programming with VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133 Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133 I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135 Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138 I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141 TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142 I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 SPI dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 I2S dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146 SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 USB OTG full speed startup time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 USB OTG full speed DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 USB OTG full speed electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151 USB HS DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151 USB HS clock timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 Dynamic characteristics: USB ULPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153 Dynamics characteristics: Ethernet MAC signals for SMI. . . . . . . . . . . . . . . . . . . . . . . . . 154 Dynamics characteristics: Ethernet MAC signals for RMII . . . . . . . . . . . . . . . . . . . . . . . . 155 Dynamics characteristics: Ethernet MAC signals for MII . . . . . . . . . . . . . . . . . . . . . . . . . 156 ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157 ADC static accuracy at fADC = 18 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158 ADC static accuracy at fADC = 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 ADC static accuracy at fADC = 36 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 ADC dynamic accuracy at fADC = 18 MHz - limited test conditions . . . . . . . . . . . . . . . . . 159 ADC dynamic accuracy at fADC = 36 MHz - limited test conditions . . . . . . . . . . . . . . . . . 159 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169 Asynchronous non-multiplexed SRAM/PSRAM/NOR read NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 171 Asynchronous non-multiplexed SRAM/PSRAM/NOR write NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 173 Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . 173 Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 174 DocID024030 Rev 10 STM32F427xx STM32F429xx Table 93. Table 94. Table 95. Table 96. Table 97. Table 98. Table 99. Table 100. Table 101. Table 102. Table 103. Table 104. Table 105. Table 106. Table 107. Table 108. Table 109. Table 110. Table 111. Table 112. Table 113. Table 114. Table 115. Table 116. Table 117. Table 118. Table 119. Table 120. Table 121. Table 122. Table 123. Table 124. List of tables Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 175 Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 176 Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 179 Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 Switching characteristics for PC Card/CF read and write cycles in attribute/common space. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 Switching characteristics for PC Card/CF read and write cycles in I/O space . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186 Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . 188 Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 189 SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190 LPSDR SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190 SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192 LPSDR SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192 DCMI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193 LTDC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194 Dynamic characteristics: SD / MMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197 LQPF100 100-pin, 14 x 14 mm low-profile quad flat package mechanical data. . . . . . . . 199 WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203 WLCSP143 recommended PCB design rules (0.4 mm pitch) . . . . . . . . . . . . . . . . . . . . . 204 LQFP144 - 144-pin, 20 x 20 mm low-profile quad flat package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206 LQFP176 - 176-pin, 24 x 24 mm low-profile quad flat package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209 LQFP208 - 208-pin, 28 x 28 mm low-profile quad flat package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214 UFBGA169 - 169-ball 7 x 7 mm 0.50 mm pitch, ultra fine pitch ball grid array package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217 UFBGA169 recommended PCB design rules (0.5 mm pitch BGA) . . . . . . . . . . . . . . . . . 218 UFBGA176+25 - ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 220 UFBGA176+25 recommended PCB design rules (0.65 mm pitch BGA) . . . . . . . . . . . . . 221 TFBGA216 - 216 ball 13 x 13 mm 0.8 mm pitch thin fine pitch ball grid array package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223 Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226 Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . 227 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233 DocID024030 Rev 10 9/239 9 List of figures STM32F427xx STM32F429xx List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. Figure 42. Figure 43. 10/239 Compatible board design STM32F10xx/STM32F2xx/STM32F4xx for LQFP100 package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Compatible board design between STM32F10xx/STM32F2xx/STM32F4xx for LQFP144 package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Compatible board design between STM32F2xx and STM32F4xx for LQFP176 and UFBGA176 packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 STM32F427xx and STM32F429xx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 STM32F427xx and STM32F429xx Multi-AHB matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Power supply supervisor interconnection with internal reset OFF . . . . . . . . . . . . . . . . . . . 27 PDR_ON control with internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Startup in regulator OFF: slow VDD slope - power-down reset risen after VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . . . 31 Startup in regulator OFF mode: fast VDD slope - power-down reset risen before VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . 31 STM32F42x LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 STM32F42x WLCSP143 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 STM32F42x LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 STM32F42x LQFP176 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 STM32F42x LQFP208 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 STM32F42x UFBGA169 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 STM32F42x UFBGA176 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 STM32F42x TFBGA216 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF) . . . . . . . . . . . 107 Typical VBAT current consumption (LSE and RTC ON/backup RAM ON) . . . . . . . . . . . . 107 High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 ACCHSI accuracy versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 ACCLSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124 PLL output clock waveforms in center spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 PLL output clock waveforms in down spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 FT I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137 I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140 Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141 SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144 SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147 I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147 SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149 DocID024030 Rev 10 STM32F427xx STM32F429xx Figure 44. Figure 45. Figure 46. Figure 47. Figure 48. Figure 49. Figure 50. Figure 51. Figure 52. Figure 53. Figure 54. Figure 55. Figure 56. Figure 57. Figure 58. Figure 59. Figure 60. Figure 61. Figure 62. Figure 63. Figure 64. Figure 65. Figure 66. Figure 67. Figure 68. Figure 69. Figure 70. Figure 71. Figure 72. Figure 73. Figure 74. Figure 75. Figure 76. Figure 77. Figure 78. Figure 79. Figure 80. Figure 81. Figure 82. Figure 83. Figure 84. Figure 85. Figure 86. Figure 87. Figure 88. Figure 89. List of figures SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149 USB OTG full speed timings: definition of data signal rise and fall time . . . . . . . . . . . . . . 151 ULPI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 Ethernet SMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154 Ethernet RMII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155 Ethernet MII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156 ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 162 Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 163 12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167 Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 169 Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 171 Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 172 Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 174 Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 176 Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177 Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 179 Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 PC Card/CompactFlash controller waveforms for common memory read access . . . . . . 182 PC Card/CompactFlash controller waveforms for common memory write access . . . . . . 182 PC Card/CompactFlash controller waveforms for attribute memory read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183 PC Card/CompactFlash controller waveforms for attribute memory write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184 PC Card/CompactFlash controller waveforms for I/O space read access . . . . . . . . . . . . 184 PC Card/CompactFlash controller waveforms for I/O space write access . . . . . . . . . . . . 185 NAND controller waveforms for read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187 NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187 NAND controller waveforms for common memory read access . . . . . . . . . . . . . . . . . . . . 188 NAND controller waveforms for common memory write access. . . . . . . . . . . . . . . . . . . . 188 SDRAM read access waveforms (CL = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189 SDRAM write access waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191 DCMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193 LCD-TFT horizontal timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195 LCD-TFT vertical timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195 SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196 SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196 LQFP100 -100-pin, 14 x 14 mm low-profile quad flat package outline . . . . . . . . . . . . . . . 198 LQPF100 - 100-pin, 14 x 14 mm low-profile quad flat recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 LQFP100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201 WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202 WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203 WLCSP143 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204 LQFP144-144-pin, 20 x 20 mm low-profile quad flat package outline . . . . . . . . . . . . . . . 205 LQPF144- 144-pin,20 x 20 mm low-profile quad flat package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 207 LQFP144 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208 LQFP176 - 176-pin, 24 x 24 mm low-profile quad flat package outline . . . . . . . . . . . . . . 209 DocID024030 Rev 10 11/239 12 List of figures Figure 90. Figure 91. Figure 92. Figure 93. Figure 94. Figure 95. Figure 96. Figure 97. Figure 98. Figure 99. Figure 100. Figure 101. Figure 102. Figure 103. Figure 104. Figure 105. Figure 106. Figure 107. Figure 108. Figure 109. 12/239 STM32F427xx STM32F429xx LQFP176 - 176-pin, 24 x 24 mm low profile quad flat recommended footprint. . . . . . . . . 211 LQFP176 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212 LQFP208 - 208-pin, 28 x 28 mm low-profile quad flat package outline . . . . . . . . . . . . . . 213 LQFP208 - 208-pin, 28 x 28 mm low-profile quad flat package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215 LQFP208 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216 UFBGA169 - 169-ball 7 x 7 mm 0.50 mm pitch, ultra fine pitch ball grid array package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217 UFBGA169 - 169-ball, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218 UFBGA169 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219 UFBGA176+25 - ball 10 x 10 mm, 0.65 mm pitch ultra thin fine pitch ball grid array package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220 UFBGA176+25-ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221 UFBGA176+25 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . 222 TFBGA216 - 216 ball 13 x 13 mm 0.8 mm pitch thin fine pitch ball grid array package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223 TFBGA176 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224 USB controller configured as peripheral-only and used in Full speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228 USB controller configured as host-only and used in full speed mode. . . . . . . . . . . . . . . . 228 USB controller configured in dual mode and used in full speed mode . . . . . . . . . . . . . . . 229 USB controller configured as peripheral, host, or dual-mode and used in high speed mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230 MII mode using a 25 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231 RMII with a 50 MHz oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231 RMII with a 25 MHz crystal and PHY with PLL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232 DocID024030 Rev 10 STM32F427xx STM32F429xx 1 Introduction Introduction This datasheet provides the description of the STM32F427xx and STM32F429xx line of microcontrollers. For more details on the whole STMicroelectronics STM32 family, please refer to Section 2.1: Full compatibility throughout the family. The STM32F427xx and STM32F429xx datasheet should be read in conjunction with the STM32F4xx reference manual. For information on the Cortex(R)-M4 core, please refer to the Cortex(R)-M4 programming manual (PM0214), available from www.st.com. DocID024030 Rev 10 13/239 44 Description 2 STM32F427xx STM32F429xx Description The STM32F427xx and STM32F429xx devices are based on the high-performance Arm(R) Cortex(R)-M4 32-bit RISC core operating at a frequency of up to 180 MHz. The Cortex-M4 core features a Floating point unit (FPU) single precision which supports all Arm(R) singleprecision data-processing instructions and data types. It also implements a full set of DSP instructions and a memory protection unit (MPU) which enhances application security. The STM32F427xx and STM32F429xx devices incorporate high-speed embedded memories (Flash memory up to 2 Mbyte, up to 256 Kbytes of SRAM), up to 4 Kbytes of backup SRAM, and an extensive range of enhanced I/Os and peripherals connected to two APB buses, two AHB buses and a 32-bit multi-AHB bus matrix. All devices offer three 12-bit ADCs, two DACs, a low-power RTC, twelve general-purpose 16-bit timers including two PWM timers for motor control, two general-purpose 32-bit timers. They also feature standard and advanced communication interfaces. * Up to three I2Cs * Six SPIs, two I2Ss full duplex. To achieve audio class accuracy, the I2S peripherals can be clocked via a dedicated internal audio PLL or via an external clock to allow synchronization. * Four USARTs plus four UARTs * An USB OTG full-speed and a USB OTG high-speed with full-speed capability (with the ULPI), * Two CANs * One SAI serial audio interface * An SDIO/MMC interface * Ethernet and camera interface * LCD-TFT display controller * Chrom-ART AcceleratorTM. Advanced peripherals include an SDIO, a flexible memory control (FMC) interface, a camera interface for CMOS sensors. Refer to Table 2: STM32F427xx and STM32F429xx features and peripheral counts for the list of peripherals available on each part number. The STM32F427xx and STM32F429xx devices operates in the -40 to +105 C temperature range from a 1.7 to 3.6 V power supply. The supply voltage can drop to 1.7 V with the use of an external power supply supervisor (refer to Section 3.17.2: Internal reset OFF). A comprehensive set of power-saving mode allows the design of low-power applications. The STM32F427xx and STM32F429xx devices offer devices in 8 packages ranging from 100 pins to 216 pins. The set of included peripherals changes with the device chosen. 14/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Description These features make the STM32F427xx and STM32F429xx microcontrollers suitable for a wide range of applications: * Motor drive and application control * Medical equipment * Industrial applications: PLC, inverters, circuit breakers * Printers, and scanners * Alarm systems, video intercom, and HVAC * Home audio appliances Figure 4 shows the general block diagram of the device family. DocID024030 Rev 10 15/239 44 STM32F427 Vx Peripherals Flash memory in Kbytes SRAM in Kbytes 1024 2048 STM32F429Vx 512 1024 2048 STM32F427 Zx 1024 2048 STM32F429Zx STM32F427 STM32F429 STM32F427 Ax Ax Ix 512 1024 2048 1024 2048 System 2048 1024 2048 512 1024 2048 STM32F429Bx STM32F429Nx 512 1024 2048 512 1024 2048 256(112+16+64+64) Backup 4 Yes(1) FMC memory controller Ethernet Timers 1024 STM32F429Ix Description 16/239 Table 2. STM32F427xx and STM32F429xx features and peripheral counts Yes Generalpurpose 10 Advanced -control 2 Basic 2 DocID024030 Rev 10 Random number generator 2 SPI / I S Yes 4/2 (full duplex) (2) 6/2 (full duplex)(2) I2C 3 USART/ UART 4/4 USB OTG Communication FS interfaces USB OTG HS Yes Yes 2 SAI 1 SDIO Yes Camera interface LCD-TFT (STM32F429xx only) Yes No Yes No Yes Chrom-ART AcceleratorTM GPIOs 12-bit ADC Number of channels No Yes No Yes Yes 82 114 130 140 3 16 24 168 STM32F427xx STM32F429xx CAN Peripherals STM32F427 Vx STM32F429Vx STM32F427 Zx STM32F429Zx 12-bit DAC Number of channels STM32F429Ix STM32F429Bx STM32F429Nx LQFP208 TFBGA216 Yes 2 Maximum CPU frequency 180 MHz 1.8 to 3.6 V(3) Operating voltage Ambient temperatures: -40 to +85 C /-40 to +105 C Operating temperatures Packages STM32F427 STM32F429 STM32F427 Ax Ax Ix Junction temperature: -40 to + 125 C LQFP100 WLCSP143 LQFP144 UFBGA169 UFBGA176 LQFP176 DocID024030 Rev 10 1. For the LQFP100 package, only FMC Bank1 or Bank2 are available. Bank1 can only support a multiplexed NOR/PSRAM memory using the NE1 Chip Select. Bank2 can only support a 16- or 8-bit NAND Flash memory using the NCE2 Chip Select. The interrupt line cannot be used since Port G is not available in this package. For UFBGA169 package, only SDRAM, NAND and multiplexed static memories are supported. 2. The SPI2 and SPI3 interfaces give the flexibility to work in an exclusive way in either the SPI mode or the I2S audio mode. 3. VDD/VDDA minimum value of 1.7 V is obtained when the device operates in reduced temperature range, and with the use of an external power supply supervisor (refer to Section 3.17.2: Internal reset OFF). STM32F427xx STM32F429xx Table 2. STM32F427xx and STM32F429xx features and peripheral counts (continued) Description 17/239 Description 2.1 STM32F427xx STM32F429xx Full compatibility throughout the family The STM32F427xx and STM32F429xx devices are part of the STM32F4 family. They are fully pin-to-pin, software and feature compatible with the STM32F2xx devices, allowing the user to try different memory densities, peripherals, and performances (FPU, higher frequency) for a greater degree of freedom during the development cycle. The STM32F427xx and STM32F429xx devices maintain a close compatibility with the whole STM32F10xx family. All functional pins are pin-to-pin compatible. The STM32F427xx and STM32F429xx, however, are not drop-in replacements for the STM32F10xx devices: the two families do not have the same power scheme, and so their power pins are different. Nonetheless, transition from the STM32F10xx to the STM32F42x family remains simple as only a few pins are impacted. Figure 1, Figure 2, and Figure 3, give compatible board designs between the STM32F4xx, STM32F2xx, and STM32F10xx families. Figure 1. Compatible board design STM32F10xx/STM32F2xx/STM32F4xx for LQFP100 package 966 966 966 966 UHVLVWRURUVROGHULQJEULGJH SUHVHQWIRUWKH670)[[[ FRQILJXUDWLRQQRWSUHVHQWLQWKH 670)[[FRQILJXUDWLRQ 966 966 966IRU670)[[ 7ZRUHVLVWRUVFRQQHFWHGWR 9''IRU670)[[ 9'' 966 966IRUWKH670)[[ 966IRUWKH670)[[ 966RU1&IRUWKH670)[[ DLG 18/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Description Figure 2. Compatible board design between STM32F10xx/STM32F2xx/STM32F4xx for LQFP144 package 966 UHVLVWRURUVROGHULQJEULGJH SUHVHQWIRUWKH670)[[ FRQILJXUDWLRQQRWSUHVHQWLQWKH 670)[[FRQILJXUDWLRQ 966 966 6LJQDOIURP H[WHUQDOSRZHU VXSSO\ VXSHUYLVRU 1RWSRSXODWHGZKHQ UHVLVWRURUVROGHULQJ EULGJHSUHVHQW 3'5B21 966 9'' 966 1RWSRSXODWHGIRU670)[[ 7ZRUHVLVWRUVFRQQHFWHGWR 966IRU670)[[ 966IRUWKH670)[[ 9'' 966 9''IRU670)[[ 9669''RU1&IRUWKH670)[[ 9''RUVLJQDOIURPH[WHUQDOSRZHUVXSSO\VXSHUYLVRUIRUWKH670)[[ DLG Figure 3. Compatible board design between STM32F2xx and STM32F4xx for LQFP176 and UFBGA176 packages *1'IRU670)[[ %<3$66B5(*IRU670)[[ 6LJQDOIURPH[WHUQDO SRZHUVXSSO\ VXSHUYLVRU 3'5B21 9'' 966 7ZRUHVLVWRUVFRQQHFWHGWR 9669''RU1&IRUWKH670)[[ 9''RUVLJQDOIURPH[WHUQDOSRZHUVXSSO\VXSHUYLVRUIRUWKH670)[[ 069 DocID024030 Rev 10 19/239 44 Description STM32F427xx STM32F429xx Figure 4. STM32F427xx and STM32F429xx block diagram :d'^t DWh Es/ h^ ZD D, /h^ >Z>'> >,^zE>s^zE> >>< D &/&K D ^ &/&K D ^ &/&K >d&d ^ZD< ^ZD< ,D, ,D, sZ Z Zs W 'W/KWKZd W 'W/KWKZd WKZ ^ Z Z / WKZWZ KZ W, 'W/KWKZd, Z ' d D E ZZ ^ sdZs s d K^/E K^Khd yd>, >^ 'W/KWKZd' /t' W>< W' K^/E K^Khd yd>K^ D, 'W/KWKZd 'W/KWKZd& s s Z W& ss^^ EZ^d Ws ,>< W sZs s^^ sWsW Z ,^ >^ Zd Zd& Zd& Zd, th 'W/KWKZd/ >^ W/ W D /sh^^K& s s &/&K W>> 'W/KWKZd h^ Kd'&^ WZ s 'W/KWKZd W ,^zEs^zE Wh/y>< ^ZD< &/&K ,ZKDZd D W ZE' D& W,z D &/&K h^ Kd',^ W,z WD h>W/ , &Wh &/&K dD ^ZD^ZDW^ZD EKZ&W EE& , &/&K dZ>< dZ >^><^E ^EtE> EZ^E^Es Et/dE/KZEZ' /EdZ ZZZ&D DZD< E:dZ^d:d/ :d<^t>< :dK^t:dK W: 'W/KWKZd: <<& ^/ W D , ^W/ DK^/D/^K ^^^D& ^>^^D& dyZy E /& /& Khd & ^>^^D& Zd/D,E d/D,dZ VDDA while a negative injection is induced by VIN5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of - 5 A/+0 A range), or other functional failure (for example reset, oscillator frequency deviation). Negative induced leakage current is caused by negative injection and positive induced leakage current by positive injection. The test results are given in Table 55. Table 55. I/O current injection susceptibility(1) Functional susceptibility Symbol IINJ Description Negative injection Positive injection Injected current on BOOT0 pin -0 NA Injected current on NRST pin -0 NA Injected current on PA0, PA1, PA2, PA3, PA6, PA7, PB0, PC0, PC1, PC2, PC3, PC4, PC5, PH1, PH2, PH3, PH4, PH5 -0 NA Injected current on TTa pins: PA4 and PA5 -0 +5 Injected current on any other FT pin -5 NA 1. NA = not applicable. Note: 134/239 It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. DocID024030 Rev 10 Unit mA STM32F427xx STM32F429xx 6.3.17 Electrical characteristics I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 56: I/O static characteristics are derived from tests performed under the conditions summarized in Table 17. All I/Os are CMOS and TTL compliant. Table 56. I/O static characteristics Symbol Parameter Conditions 1.7 VVDD3.6 V BOOT0 I/O input low level voltage FT, TTa and NRST I/O input high level voltage(5) - 1.75 VVDD 3.6 V, - 40 CTA 105 C - 1.7 VVDD 3.6 V, 0 CTA 105 C - 1.7 VVDD3.6 V 1.75 VVDD 3.6 V, - 40 CTA 105 C BOOT0 I/O input high level voltage 1.7 VVDD 3.6 V, 0 CTA 105 C FT, TTa and NRST I/O input hysteresis Unit - (1) 0.45VDD+0.3(1) 0.7VDD(2) (5) - V - - 10%VDD(3) - V 0.1 - - VSS VIN VDD - - 1 VIN = 5 V - - 3 1.7 VVDD 3.6 V, 0 CTA 105 C I/O input leakage current (4) - 0.17VDD+0.7(1) 1.75 VVDD 3.6 V, - 40 CTA 105 C BOOT0 I/O input hysteresis V 0.1VDD+0.1(1) 1.7 VVDD3.6 V VHYS I/O FT input leakage current Max 0.3VDD(2) VIL Ilkg Typ 0.35VDD - 0.04 FT, TTa and NRST I/O input low level voltage VIH Min DocID024030 Rev 10 A 135/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 56. I/O static characteristics (continued) Symbol RPU RPD CIO(8) Parameter Weak pull-up equivalent resistor(6) Weak pulldown equivalent resistor(7) Min Typ Max 30 40 50 PA10/PB12 (OTG_FS_ID, OTG_HS_ID) 7 10 14 All pins except for PA10/PB12 (OTG_FS_ID, OTG_HS_ID) 30 40 50 7 10 14 - 5 - All pins except for PA10/PB12 (OTG_FS_ID, OTG_HS_ID) Conditions VIN = VSS k VIN = VDD PA10/PB12 (OTG_FS_ID, OTG_HS_ID) I/O pin capacitance Unit - 1. Guaranteed by design. 2. Tested in production. 3. With a minimum of 200 mV. 4. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins, Refer to Table 55: I/O current injection susceptibility 5. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins.Refer to Table 55: I/O current injection susceptibility 6. Pull-up resistors are designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series resistance is minimum (~10% order). 7. Pull-down resistors are designed with a true resistance in series with a switchable NMOS. This NMOS contribution to the series resistance is minimum (~10% order). 8. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization results. All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements for FT I/Os is shown in Figure 35. 136/239 DocID024030 Rev 10 pF STM32F427xx STM32F429xx Electrical characteristics Figure 35. FT I/O input characteristics 9,/9,+ 9 ' 9' L P ,+ Q 9 QW H P LUH 77/UHTXLUHPHQW U 9,+PLQ 9 26 0 & ' 9' Q R WL XF LQ RG +P , SU 9 LQ QV WLR HG VW XOD P L 7H V LJQ HV $UHDQRW Q' R G VH GHWHUPLQHG '' D % 9 D[ ,/P QV9 ODWLR X LP V VLJQ Q'H HGR 77/UHTXLUHPHQW9,/PD[ %DV 9 7HVWHGLQSURGXFWLRQ&026UHTXLUHPHQW9,/PD[ 9'' X HT 9'' 9 069 Output driving current The GPIOs (general purpose input/outputs) can sink or source up to 8 mA, and sink or source up to 20 mA (with a relaxed VOL/VOH) except PC13, PC14, PC15 and PI8 which can sink or source up to 3mA. When using the PC13 to PC15 and PI8 GPIOs in output mode, the speed should not exceed 2 MHz with a maximum load of 30 pF. In the user application, the number of I/O pins which can drive current must be limited to respect the absolute maximum rating specified in Section 6.2. In particular: * The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating IVDD (see Table 15). * The sum of the currents sunk by all the I/Os on VSS plus the maximum Run consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating IVSS (see Table 15). DocID024030 Rev 10 137/239 198 Electrical characteristics STM32F427xx STM32F429xx Output voltage levels Unless otherwise specified, the parameters given in Table 57 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. All I/Os are CMOS and TTL compliant. Table 57. Output voltage characteristics Symbol Parameter VOL(1) Output low level voltage for an I/O pin VOH(3) Output high level voltage for an I/O pin VOL (1) Output low level voltage for an I/O pin VOH (3) Output high level voltage for an I/O pin VOL(1) Output low level voltage for an I/O pin VOH(3) Output high level voltage for an I/O pin VOL(1) Output low level voltage for an I/O pin VOH(3) Output high level voltage for an I/O pin VOL(1) Output low level voltage for an I/O pin VOH(3) Output high level voltage for an I/O pin Conditions (2) CMOS port IIO = +8 mA 2.7 V VDD 3.6 V TTL port(2) IIO =+ 8mA 2.7 V VDD 3.6 V IIO = +20 mA 2.7 V VDD 3.6 V IIO = +6 mA 1.8 V VDD 3.6 V IIO = +4 mA 1.7 V VDD 3.6V Min Max - 0.4 VDD - 0.4 - - 0.4 2.4 - - 1.3(4) VDD -1.3(4) - - 0.4(4) VDD -0.4(4) - - 0.4(5) VDD -0.4(5) - Unit V V V V V 1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 15. and the sum of IIO (I/O ports and control pins) must not exceed IVSS. 2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52. 3. The IIO current sourced by the device must always respect the absolute maximum rating specified in Table 15 and the sum of IIO (I/O ports and control pins) must not exceed IVDD. 4. Based on characterization data. 5. Guaranteed by design. 138/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Input/output AC characteristics The definition and values of input/output AC characteristics are given in Figure 36 and Table 58, respectively. Unless otherwise specified, the parameters given in Table 58 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 17. Table 58. I/O AC characteristics(1)(2) OSPEEDRy [1:0] bit value(1) Symbol fmax(IO)out Parameter Maximum frequency(3) 00 tf(IO)out/ tr(IO)out fmax(IO)out Output high to low level fall time and output low to high level rise time Maximum frequency(3) 01 tf(IO)out/ tr(IO)out fmax(IO)out Output high to low level fall time and output low to high level rise time Maximum frequency(3) 10 tf(IO)out/ tr(IO)out Output high to low level fall time and output low to high level rise time Conditions Min Typ Max CL = 50 pF, VDD 2.7 V - - 4 CL = 50 pF, VDD 1.7 V - - 2 CL = 10 pF, VDD 2.7 V - - 8 CL = 10 pF, VDD 1.8 V - - 4 CL = 10 pF, VDD 1.7 V - - 3 CL = 50 pF, VDD = 1.7 V to 3.6 V - - 100 CL = 50 pF, VDD 2.7 V - - 25 CL = 50 pF, VDD 1.8 V - - 12.5 CL = 50 pF, VDD 1.7 V - - 10 CL = 10 pF, VDD 2.7 V - - 50 CL = 10 pF, VDD 1.8 V - - 20 CL = 10 pF, VDD 1.7 V - - 12.5 CL = 50 pF, VDD 2.7 V - - 10 CL = 10 pF, VDD 2.7 V - - 6 CL = 50 pF, VDD 1.7 V - - 20 CL = 10 pF, VDD 1.7 V - - 10 CL = 40 pF, VDD 2.7 V - - 50(4) CL = 10 pF, VDD 2.7 V - - 100(4) CL = 40 pF, VDD 1.7 V - - 25 CL = 10 pF, VDD 1.8 V - - 50 CL = 10 pF, VDD 1.7 V - - 42.5 CL = 40 pF, VDD 2.7 V - - 6 CL = 10 pF, VDD 2.7 V - - 4 CL = 40 pF, VDD 1.7 V - - 10 CL = 10 pF, VDD 1.7 V - - 6 DocID024030 Rev 10 Unit MHz ns MHz ns MHz ns 139/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 58. I/O AC characteristics(1)(2) (continued) OSPEEDRy [1:0] bit value(1) Symbol fmax(IO)out Parameter Conditions Maximum frequency(3) 11 tf(IO)out/ tr(IO)out - tEXTIpw Output high to low level fall time and output low to high level rise time Min Typ Max CL = 30 pF, VDD 2.7 V - - 100(4) CL = 30 pF, VDD 1.8 V - - 50 CL = 30 pF, VDD 1.7 V - - 42.5 CL = 10 pF, VDD 2.7 V - - 180(4) CL = 10 pF, VDD 1.8 V - - 100 CL = 10 pF, VDD 1.7 V - - 72.5 CL = 30 pF, VDD 2.7 V - - 4 CL = 30 pF, VDD 1.8 V - - 6 CL = 30 pF, VDD 1.7 V - - 7 CL = 10 pF, VDD 2.7 V - - 2.5 CL = 10 pF, VDD 1.8 V - - 3.5 CL = 10 pF, VDD 1.7 V - - 4 10 - - Pulse width of external signals detected by the EXTI controller Unit MHz ns ns 1. Guaranteed by design. 2. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F4xx reference manual for a description of the GPIOx_SPEEDR GPIO port output speed register. 3. The maximum frequency is defined in Figure 36. 4. For maximum frequencies above 50 MHz and VDD > 2.4 V, the compensation cell should be used. Figure 36. I/O AC characteristics definition (;7(51$/ 287387 21&/ WU ,2 RXW WI ,2 RXW 7 0D[LPXPIUHTXHQF\LVDFKLHYHGLI WUWI 7DQGLIWKHGXW\F\FOHLV ZKHQORDGHGE\&/VSHFLILHGLQWKHWDEOH,2$&FKDUDFWHULVWLFV 140/239 DocID024030 Rev 10 DLG STM32F427xx STM32F429xx 6.3.18 Electrical characteristics NRST pin characteristics The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up resistor, RPU (see Table 56: I/O static characteristics). Unless otherwise specified, the parameters given in Table 59 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 17. Table 59. NRST pin characteristics Symbol Parameter Conditions Min Typ Max Unit RPU Weak pull-up equivalent resistor(1) VIN = VSS 30 40 50 k - - 100 ns VDD > 2.7 V 300 - - ns Internal Reset source 20 - - s VF(NRST) (2) NRST Input filtered pulse VNF(NRST)(2) NRST Input not filtered pulse TNRST_OUT Generated reset pulse duration 1. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series resistance must be minimum (~10% order). 2. Guaranteed by design. Figure 37. Recommended NRST pin protection 9'' ([WHUQDO UHVHWFLUFXLW 1567 538 ,QWHUQDO5HVHW )LOWHU ) 670) DLF 1. The reset network protects the device against parasitic resets. 2. The external capacitor must be placed as close as possible to the device. 3. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in Table 59. Otherwise the reset is not taken into account by the device. DocID024030 Rev 10 141/239 198 Electrical characteristics 6.3.19 STM32F427xx STM32F429xx TIM timer characteristics The parameters given in Table 60 are guaranteed by design. Refer to Section 6.3.17: I/O port characteristics for details on the input/output alternate function characteristics (output compare, input capture, external clock, PWM output). Table 60. TIMx characteristics(1)(2) Symbol tres(TIM) fEXT ResTIM tMAX_COUNT Conditions(3) Min Max Unit AHB/APBx prescaler=1 or 2 or 4, fTIMxCLK = 180 MHz 1 - tTIMxCLK AHB/APBx prescaler>4, fTIMxCLK = 90 MHz 1 - tTIMxCLK Timer external clock frequency on CH1 to CH4 f TIMxCLK = 180 MHz 0 fTIMxCLK/2 MHz Timer resolution - 16/32 bit Maximum possible count with 32-bit counter - 65536 x 65536 tTIMxCLK Parameter Timer resolution time 1. TIMx is used as a general term to refer to the TIM1 to TIM12 timers. 2. Guaranteed by design. 3. The maximum timer frequency on APB1 or APB2 is up to 180 MHz, by setting the TIMPRE bit in the RCC_DCKCFGR register, if APBx prescaler is 1 or 2 or 4, then TIMxCLK = HCKL, otherwise TIMxCLK = 4x PCLKx. 6.3.20 Communications interfaces I2C interface characteristics The I2C interface meets the timings requirements of the I2C-bus specification and user manual rev. 03 for: * Standard-mode (Sm): with a bit rate up to 100 kbit/s * Fast-mode (Fm): with a bit rate up to 400 kbit/s. The I2C timings requirements are guaranteed by design when the I2C peripheral is properly configured (refer to RM0090 reference manual). The SDA and SCL I/O requirements are met with the following restrictions: the SDA and SCL I/O pins are not "true" open-drain. When configured as open-drain, the PMOS connected between the I/O pin and VDD is disabled, but is still present. Refer to Section 6.3.17: I/O port characteristics for more details on the I2C I/O characteristics. All I2C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog filter characteristics: 142/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Table 61. I2C analog filter characteristics(1) Symbol tAF Parameter Maximum pulse width of spikes that are suppressed by the analog filter Min Max Unit 50(2) 260(3) ns 1. Guaranteed by design. 2. Spikes with widths below tAF(min) are filtered. 3. Spikes with widths above tAF(max) are not filtered SPI interface characteristics Unless otherwise specified, the parameters given in Table 62 for the SPI interface are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 17, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 10 * Capacitive load C = 30 pF * Measurement points are done at CMOS levels: 0.5VDD Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate function characteristics (NSS, SCK, MOSI, MISO for SPI). Table 62. SPI dynamic characteristics(1) Symbol Parameter Conditions Min Typ Master mode, SPI1/4/5/6, 2.7 VVDD3.6 V fSCK 1/tc(SCK) SPI clock frequency Slave mode, SPI1/4/5/6, 2.7 VVDD3.6 V Receiver Slave mode, SPI1/2/3/4/5/6, 1.7 VVDD3.6 V Duty(SCK) Duty cycle of SPI clock Slave mode frequency DocID024030 Rev 10 Unit 45 - - Transmitter/ full-duplex Master mode, SPI1/2/3/4/5/6, 1.7 VVDD3.6 V Max 45 38(2) MHz 22.5 - 22.5 30 50 70 % 143/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 62. SPI dynamic characteristics(1) (continued) Symbol Parameter tw(SCKH) SCK high and low time tw(SCKL) Conditions Min Typ Max Master mode, SPI presc = 2, 2.7 VVDD3.6 V TPCLK - 0.5 TPCLK TPCLK+0.5 Master mode, SPI presc = 2, 1.7 VVDD3.6 V TPCLK - 2 TPCLK TPCLK+2 - - tsu(NSS) NSS setup time Slave mode, SPI presc = 2 4TPCLK th(NSS) NSS hold time Slave mode, SPI presc = 2 2TPCLK tsu(MI) tsu(SI) th(MI) th(SI) ta(SO) tdis(SO) tv(SO) th(SO) tv(MO) th(MO) Data input setup time Data input hold time Master mode 3 - - Slave mode 0 - - Master mode 0.5 - - Slave mode 2 - - 0 - 4TPCLK Slave mode, SPI1/4/5/6, 2.7 VVDD3.6 V 0 - 8.5 Slave mode, SPI1/2/3/4/5/6 and 1.7 VVDD3.6 V 0 - 16.5 Slave mode (after enable edge), SPI1/4/5/6 and 2.7V VDD 3.6V - 11 13 Slave mode (after enable edge), SPI2/3, 2.7 VVDD3.6 V - 14 15 Slave mode (after enable edge), SPI1/4/5/6, 1.7 VVDD3.6 V - 15.5 19 Slave mode (after enable edge), SPI2/3, 1.7 VVDD3.6 V - 15.5 17.5 Master mode (after enable edge), SPI1/4/5/6, 2.7 VVDD3.6 V - - 2.5 Master mode (after enable edge), SPI1/2/3/4/5/6, 1.7 VVDD3.6 V - - 4.5 Master mode (after enable edge) 0 - - Data output access time Slave mode, SPI presc = 2 Data output disable time Data output valid/hold time Data output valid time Data output hold time Unit ns ns 1. Guaranteed by characterization results. 2. Maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into SCK low or high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a master having tsu(MI) = 0 while Duty(SCK) = 50% 144/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Figure 38. SPI timing diagram - slave mode and CPHA = 0 Figure 39. SPI timing diagram - slave mode and CPHA = 1 166LQSXW 6&.LQSXW W68 166 &3+$ &32/ &3+$ &32/ WZ 6&.+ WZ 6&./ WK 62 WY 62 WD 62 0,62 287387 06%287 %,7287 WU 6&. WI 6&. WGLV 62 /6%287 WK 6, WVX 6, 026, ,1387 WK 166 WF 6&. 06%,1 %,7,1 /6%,1 DLE DocID024030 Rev 10 145/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 40. SPI timing diagram - master mode +LJK 166LQSXW 6&.2XWSXW &3+$ &32/ 6&.2XWSXW WF 6&. &3+$ &32/ &3+$ &32/ &3+$ &32/ WVX 0, 0,62 ,13 87 WZ 6&.+ WZ 6&./ WU 6&. WI 6&. %,7,1 06%,1 /6%,1 WK 0, 026, 287387 06%287 WY 02 % , 7287 /6%287 WK 02 DLF 146/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics I2S interface characteristics Unless otherwise specified, the parameters given in Table 63 for the I2S interface are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 17, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 10 * Capacitive load C = 30 pF * Measurement points are done at CMOS levels: 0.5VDD Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate function characteristics (CK, SD, WS). Table 63. I2S dynamic characteristics(1) Symbol Parameter fMCK I2S Main clock output fCK I2S clock frequency DCK Conditions Min Max Unit 256x8K 256xFs(2) MHz Master data: 32 bits - 64xFs Slave data: 32 bits - 64xFs 30 70 - I2S clock frequency duty cycle Slave receiver tv(WS) WS valid time Master mode 0 6 th(WS) WS hold time Master mode 0 - tsu(WS) WS setup time Slave mode 1 - th(WS) WS hold time Slave mode 0 - Master receiver 7.5 - Slave receiver 2 - Master receiver 0 - Slave receiver 0 - Slave transmitter (after enable edge) - 27 Master transmitter (after enable edge) - 20 Master transmitter (after enable edge) 2.5 tsu(SD_MR) tsu(SD_SR) th(SD_MR) th(SD_SR) tv(SD_ST) th(SD_ST) Data input setup time Data input hold time Data output valid time tv(SD_MT) th(SD_MT) Data output hold time MHz % ns - 1. Guaranteed by characterization results. 2. The maximum value of 256xFs is 45 MHz (APB1 maximum frequency). Note: Refer to the I2S section of RM0090 reference manual for more details on the sampling frequency (FS). fMCK, fCK, and DCK values reflect only the digital peripheral behavior. The values of these parameters might be slightly impacted by the source clock precision. DCK depends mainly on the value of ODD bit. The digital contribution leads to a minimum value of (I2SDIV/(2*I2SDIV+ODD) and a maximum value of (I2SDIV+ODD)/(2*I2SDIV+ODD). FS maximum value is supported for each mode/condition. DocID024030 Rev 10 147/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 41. I2S slave timing diagram (Philips protocol)(1) 1. .LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte. Figure 42. I2S master timing diagram (Philips protocol)(1) 1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte. 148/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics SAI characteristics Unless otherwise specified, the parameters given in Table 64 for SAI are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 17, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 10 * Capacitive load C=30 pF * Measurement points are performed at CMOS levels: 0.5VDD Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate function characteristics (SCK,SD,WS). Table 64. SAI characteristics(1) Symbol Parameter Conditions Min Max Unit fMCKL SAI Main clock output - 256 x 8K 256xFs(2) MHz FSCK SAI clock frequency Master data: 32 bits - 64xFs Slave data: 32 bits - 64xFs DSCK SAI clock frequency duty cycle Slave receiver 30 70 tv(FS) FS valid time Master mode 8 22 tsu(FS) FS setup time Slave mode 2 - th(FS) FS hold time Master mode 8 - Slave mode 0 - Master receiver 5 - Slave receiver 3 - Master receiver 0 - Slave receiver 0 - Slave transmitter (after enable edge) - 22 Master transmitter (after enable edge) - 20 Master transmitter (after enable edge) 8 - tsu(SD_MR) tsu(SD_SR) th(SD_MR) th(SD_SR) tv(SD_ST) th(SD_ST) Data input setup time Data input hold time Data output valid time tv(SD_MT) th(SD_MT) Data output hold time MHz % ns 1. Guaranteed by characterization results. 2. 256xFs maximum corresponds to 45 MHz (APB2 xaximum frequency) DocID024030 Rev 10 149/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 43. SAI master timing waveforms F3#+ 3!)?3#+?8 TH&3 3!)?&3?8 OUTPUT TV&3 TH3$?-4 TV3$?-4 3!)?3$?8 TRANSMIT 3LOT N 3LOT N TSU3$?-2 TH3$?-2 3!)?3$?8 RECEIVE 3LOT N -36 Figure 44. SAI slave timing waveforms F3#+ 3!)?3#+?8 TW#+(?8 3!)?&3?8 INPUT TW#+,?8 TH&3 TSU&3 3!)?3$?8 TRANSMIT 3LOT N TSU3$?32 3!)?3$?8 RECEIVE TH3$?34 TV3$?34 3LOT N TH3$?32 3LOT N -36 150/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics USB OTG full speed (FS) characteristics This interface is present in both the USB OTG HS and USB OTG FS controllers. Table 65. USB OTG full speed startup time Symbol tSTARTUP(1) Parameter Max Unit USB OTG full speed transceiver startup time 1 s 1. Guaranteed by design. Table 66. USB OTG full speed DC electrical characteristics Symbol VDD Input levels Parameter Conditions USB OTG full speed transceiver operating voltage Min.(1) Typ. Max.(1) Unit 3.0(2) - 3.6 VDI(3) Differential input sensitivity I(USB_FS_DP/DM, USB_HS_DP/DM) 0.2 - - VCM(3) Differential common mode range Includes VDI range 0.8 - 2.5 VSE(3) Single ended receiver threshold 1.3 - 2.0 VOL Static output level low - - 0.3 2.8 - 3.6 17 21 24 0.65 1.1 2.0 Output levels RPD RPU VOH Static output level high PA11, PA12, PB14, PB15 (USB_FS_DP/DM, USB_HS_DP/DM) PA9, PB13 (OTG_FS_VBUS, OTG_HS_VBUS) RL of 1.5 k to 3.6 V(4) RL of 15 k to VSS(4) V V V VIN = VDD k PA12, PB15 (USB_FS_DP, USB_HS_DP) VIN = VSS 1.5 1.8 2.1 PA9, PB13 (OTG_FS_VBUS, OTG_HS_VBUS) VIN = VSS 0.25 0.37 0.55 1. All the voltages are measured from the local ground potential. 2. The USB OTG full speed transceiver functionality is ensured down to 2.7 V but not the full USB full speed electrical characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range. 3. Guaranteed by design. 4. RL is the load connected on the USB OTG full speed drivers. Note: When VBUS sensing feature is enabled, PA9 and PB13 should be left at their default state (floating input), not as alternate function. A typical 200 A current consumption of the sensing block (current to voltage conversion to determine the different sessions) can be observed on PA9 and PB13 when the feature is enabled. DocID024030 Rev 10 151/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 45. USB OTG full speed timings: definition of data signal rise and fall time &URVVRYHU SRLQWV 'LIIHUHQWLDO GDWDOLQHV 9&56 966 WI WU DLE Table 67. USB OTG full speed electrical characteristics(1) Driver characteristics Symbol tr tf trfm Parameter Rise time(2) Fall time(2) Conditions Min Max Unit CL = 50 pF 4 20 ns CL = 50 pF 4 20 ns tr/tf 90 110 % 1.3 2.0 V 28 44 Rise/ fall time matching VCRS Output signal crossover voltage ZDRV Output driver impedance(3) Driving high or low 1. Guaranteed by design. 2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB Specification - Chapter 7 (version 2.0). 3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching impedance is included in the embedded driver. USB high speed (HS) characteristics Unless otherwise specified, the parameters given in Table 70 for ULPI are derived from tests performed under the ambient temperature, fHCLK frequency summarized in Table 69 and VDD supply voltage conditions summarized in Table 68, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 10, unless otherwise specified * Capacitive load C = 30 pF, unless otherwise specified * Measurement points are done at CMOS levels: 0.5VDD. Refer to Section 6.3.17: I/O port characteristics for more details on the input/output characteristics. Table 68. USB HS DC electrical characteristics Symbol Input level Parameter VDD USB OTG HS operating voltage 1. All the voltages are measured from the local ground potential. 152/239 DocID024030 Rev 10 Min.(1) Max.(1) Unit 1.7 3.6 V STM32F427xx STM32F429xx Electrical characteristics Table 69. USB HS clock timing parameters(1) Symbol Parameter Min Typ Max Unit fHCLK value to guarantee proper operation of USB HS interface 30 - - MHz FSTART_8BIT Frequency (first transition) 54 60 66 MHz FSTEADY Frequency (steady state) 500 ppm 59.97 60 60.03 MHz DSTART_8BIT Duty cycle (first transition) 40 50 60 % DSTEADY Duty cycle (steady state) 500 ppm 49.975 50 50.025 % tSTEADY Time to reach the steady state frequency and duty cycle after the first transition - - 1.4 ms Peripheral - - 5.6 Host - - - - - - tSTART_DEV tSTART_HOST Clock startup time after the de-assertion of SuspendM 8-bit 10% 8-bit 10% PHY preparation time after the first transition of the input clock tPREP ms s 1. Guaranteed by design. Figure 46. ULPI timing diagram #LOCK #ONTROL )N 5,0)?$)2 5,0)?.84 T3# T(# T3$ T($ DATA )N BIT T$# #ONTROL OUT 5,0)?340 DATA OUT BIT T$# T$$ AIC DocID024030 Rev 10 153/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 70. Dynamic characteristics: USB ULPI(1) Symbol Parameter Conditions Min. Typ. Max. tSC Control in (ULPI_DIR, ULPI_NXT) setup time 2 - - tHC Control in (ULPI_DIR, ULPI_NXT) hold time 0.5 - - tSD Data in setup time 1.5 - - tHD Data in hold time 2 - - 2.7 V < VDD < 3.6 V, CL = 15 pF and OSPEEDRy[1:0] = 11 - 9 9.5 2.7 V < VDD < 3.6 V, CL = 20 pF and OSPEEDRy[1:0] = 10 - 1.7 V < VDD < 3.6 V, CL = 15 pF and OSPEEDRy[1:0] = 11 12 15 - tDC/tDD Data/control output delay 1. Guaranteed by characterization results. 154/239 DocID024030 Rev 10 Unit ns STM32F427xx STM32F429xx Electrical characteristics Ethernet characteristics Unless otherwise specified, the parameters given in Table 71, Table 72 and Table 73 for SMI, RMII and MII are derived from tests performed under the ambient temperature, fHCLK frequency summarized in Table 17 with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 10 * Capacitive load C = 30 pF for 2.7 V < VDD < 3.6 V * Capacitive load C = 20 pF for 1.71 V < VDD < 3.6 V * Measurement points are done at CMOS levels: 0.5VDD. Refer to Section 6.3.17: I/O port characteristics for more details on the input/output characteristics. Table 71 gives the list of Ethernet MAC signals for the SMI (station management interface) and Figure 47 shows the corresponding timing diagram. Figure 47. Ethernet SMI timing diagram W0'& (7+B0'& WG 0',2 (7+B0',2 2 WVX 0',2 WK 0',2 (7+B0',2 , 069 Table 71. Dynamics characteristics: Ethernet MAC signals for SMI(1) Symbol tMDC Parameter MDC cycle time(2.38 MHz) Min Typ Max 411 420 425 Td(MDIO) Write data valid time 6 10 13 tsu(MDIO) Read data setup time 12 - - th(MDIO) Read data hold time 0 - - Unit ns 1. Guaranteed by characterization results. DocID024030 Rev 10 155/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 72 gives the list of Ethernet MAC signals for the RMII and Figure 48 shows the corresponding timing diagram. Figure 48. Ethernet RMII timing diagram 50,,B5()B&/. WG 7;(1 WG 7;' 50,,B7;B(1 50,,B7;'>@ WVX 5;' WVX &56 WLK 5;' WLK &56 50,,B5;'>@ 50,,B&56B'9 DLE Table 72. Dynamics characteristics: Ethernet MAC signals for RMII(1) Symbol Parameter tsu(RXD) Receive data setup time tih(RXD) Receive data hold time tsu(CRS) Carrier sense setup time tih(CRS) Carrier sense hold time td(TXEN) Transmit enable valid delay time td(TXD) Transmit data valid delay time Condition Min Typ Max 1.5 - - 0 - - 1 - - 1 - - 2.7 V < VDD < 3.6 V 8 10.5 12 1.71 V < VDD < 3.6 V 8 10.5 14 2.7 V < VDD < 3.6 V 8 11 12.5 1.71 V < VDD < 3.6 V 8 11 14.5 1.71 V < VDD < 3.6 V 1. Guaranteed by characterization results. Table 73 gives the list of Ethernet MAC signals for MII and Figure 48 shows the corresponding timing diagram. 156/239 DocID024030 Rev 10 Unit ns STM32F427xx STM32F429xx Electrical characteristics Figure 49. Ethernet MII timing diagram 0,,B5;B&/. WVX 5;' WVX (5 WVX '9 WLK 5;' WLK (5 WLK '9 0,,B5;'>@ 0,,B5;B'9 0,,B5;B(5 0,,B7;B&/. WG 7;(1 WG 7;' 0,,B7;B(1 0,,B7;'>@ AIB Table 73. Dynamics characteristics: Ethernet MAC signals for MII(1) Symbol Parameter Condition Min Typ Max tsu(RXD) Receive data setup time 9 - - tih(RXD) Receive data hold time 10 - - tsu(DV) Data valid setup time 9 - - tih(DV) Data valid hold time 8 - - tsu(ER) Error setup time 6 - - tih(ER) Error hold time 8 - - 2.7 V < VDD < 3.6 V 8 10 14 1.71 V < VDD < 3.6 V 8 10 16 2.7 V < VDD < 3.6 V 7.5 10 15 1.71 V < VDD < 3.6 V 7.5 10 17 td(TXEN) Transmit enable valid delay time td(TXD) Transmit data valid delay time 1.71 V < VDD < 3.6 V Unit ns 1. Guaranteed by characterization results. CAN (controller area network) interface Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate function characteristics (CANx_TX and CANx_RX). DocID024030 Rev 10 157/239 198 Electrical characteristics 6.3.21 STM32F427xx STM32F429xx 12-bit ADC characteristics Unless otherwise specified, the parameters given in Table 74 are derived from tests performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage conditions summarized in Table 17. Table 74. ADC characteristics Symbol Parameter VDDA Power supply VREF+ Positive reference voltage VREF- Negative reference voltage Conditions Typ Max (1) 1.7 - 3.6 1.7(1) - VDDA - 0 - 0.6 15 18 MHz VDDA = 2.4 to 3.6 V 0.6 30 36 MHz fADC = 30 MHz, 12-bit resolution - - 1764 kHz - - 17 1/fADC 0 (VSSA or VREFtied to ground) - VREF+ V - - 50 k 1.5 - 6 k - 4 7 pF - - 0.100 s - - 3(5) 1/fADC - - 0.067 s - - 2(5) 1/fADC 0.100 - 16 s 3 - 480 1/fADC - 2 3 s fADC = 30 MHz 12-bit resolution 0.50 - 16.40 s fADC = 30 MHz 10-bit resolution 0.43 - 16.34 s fADC = 30 MHz 8-bit resolution 0.37 - 16.27 s fADC = 30 MHz 6-bit resolution 0.30 - 16.20 s VDDA - VREF+ < 1.2 V (1) fADC fTRIG(2) VAIN RAIN(2) ADC clock frequency External trigger frequency VDDA = 1.7 to 2.4 V Conversion voltage range(3) External input impedance See Equation 1 for details RADC(2)(4) Sampling switch resistance CADC(2) Internal sample and hold capacitor tlat(2) Injection trigger conversion latency fADC = 30 MHz tlatr(2) Regular trigger conversion latency fADC = 30 MHz tS(2) Sampling time tSTAB(2) Power-up time tCONV(2) Total conversion time (including sampling time) fADC = 30 MHz Min 9 to 492 (tS for sampling +n-bit resolution for successive approximation) 158/239 DocID024030 Rev 10 Unit V 1/fADC STM32F427xx STM32F429xx Electrical characteristics Table 74. ADC characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit 12-bit resolution Single ADC - - 2 Msps 12-bit resolution Interleave Dual ADC mode - - 3.75 Msps 12-bit resolution Interleave Triple ADC mode - - 6 Msps Sampling rate fS(2) (fADC = 30 MHz, and tS = 3 ADC cycles) IVREF+(2) ADC VREF DC current consumption in conversion mode - 300 500 A IVDDA(2) ADC VDDA DC current consumption in conversion mode - 1.6 1.8 mA 1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.17.2: Internal reset OFF). 2. Guaranteed by characterization results. 3. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA. 4. RADC maximum value is given for VDD=1.7 V, and minimum value for VDD=3.3 V. 5. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 74. Equation 1: RAIN max formula R AIN ( k - 0.5 ) - - R ADC = --------------------------------------------------------------N+2 f ADC x C ADC x ln ( 2 ) The formula above (Equation 1) is used to determine the maximum external impedance allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of sampling periods defined in the ADC_SMPR1 register. Table 75. ADC static accuracy at fADC = 18 MHz Symbol ET Parameter Test conditions Total unadjusted error EO Offset error EG Gain error ED Differential linearity error EL Integral linearity error fADC =18 MHz VDDA = 1.7 to 3.6 V VREF = 1.7 to 3.6 V VDDA - VREF < 1.2 V Typ Max(1) 3 4 2 3 1 3 1 2 2 3 Unit LSB 1. Guaranteed by characterization results. DocID024030 Rev 10 159/239 198 Electrical characteristics a Table 76. ADC static accuracy at fADC = 30 MHz Symbol ET STM32F427xx STM32F429xx Parameter Test conditions Total unadjusted error EO Offset error EG Gain error ED Differential linearity error EL Integral linearity error fADC = 30 MHz, RAIN < 10 k, VDDA = 2.4 to 3.6 V, VREF = 1.7 to 3.6 V, VDDA - VREF < 1.2 V Typ Max(1) 2 5 1.5 2.5 1.5 3 1 2 1.5 3 Unit LSB 1. Guaranteed by characterization results. Table 77. ADC static accuracy at fADC = 36 MHz Symbol ET Parameter Test conditions Total unadjusted error EO Offset error EG Gain error ED Differential linearity error EL Integral linearity error fADC =36 MHz, VDDA = 2.4 to 3.6 V, VREF = 1.7 to 3.6 V VDDA - VREF < 1.2 V Typ Max(1) 4 7 2 3 3 6 2 3 3 6 Unit LSB 1. Guaranteed by characterization results. Table 78. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions(1) Symbol Parameter Test conditions ENOB Effective number of bits SINAD Signal-to-noise and distortion ratio SNR Signal-to-noise ratio THD Total harmonic distortion fADC =18 MHz VDDA = VREF+= 1.7 V Input Frequency = 20 KHz Temperature = 25 C Min Typ Max Unit 10.3 10.4 - bits 64 64.2 - 64 65 - - 67 - 72 - dB 1. Guaranteed by characterization results. Table 79. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1) Symbol Parameter Test conditions ENOB Effective number of bits SINAD Signal-to noise and distortion ratio SNR Signal-to noise ratio THD Total harmonic distortion fADC =36 MHz VDDA = VREF+ = 3.3 V Input Frequency = 20 KHz Temperature = 25 C 1. Guaranteed by characterization results. 160/239 DocID024030 Rev 10 Min Typ Max Unit 10.6 10.8 - bits 66 67 - 64 68 - - 70 - 72 - dB STM32F427xx STM32F429xx Note: Electrical characteristics ADC accuracy vs. negative injection current: injecting a negative current on any analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in Section 6.3.17 does not affect the ADC accuracy. Figure 50. ADC accuracy characteristics ;,3" )$%!, 6 2%& OR 6 $$! DEPENDING ON PACKAGE = %' %4 %/ %, %$ , 3")$%!, 6 33! 6$$! AIC 1. See also Table 76. 2. Example of an actual transfer curve. 3. Ideal transfer curve. 4. End point correlation line. 5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. EO = Offset Error: deviation between the first actual transition and the first ideal one. EG = Gain Error: deviation between the last ideal transition and the last actual one. ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one. EL = Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. DocID024030 Rev 10 161/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 51. Typical connection diagram using the ADC 670) 9'' 5$,1 9$,1 6DPSOHDQGKROG$'& FRQYHUWHU 97 9 5$'& $,1[ &SDUDVLWLF 97 9 ,/$ ELW FRQYHUWHU & $'& DL 1. Refer to Table 74 for the values of RAIN, RADC and CADC. 2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this, fADC should be reduced. 162/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics General PCB design guidelines Power supply decoupling should be performed as shown in Figure 52 or Figure 53, depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be ceramic (good quality). They should be placed them as close as possible to the chip. Figure 52. Power supply and reference decoupling (VREF+ not connected to VDDA) 670) 95() )Q) 9''$ )Q) 966$95() DLE 1. VREF+ and VREF- inputs are both available on UFBGA176. VREF+ is also available on LQFP100, LQFP144, and LQFP176. When VREF+ and VREF- are not available, they are internally connected to VDDA and VSSA. DocID024030 Rev 10 163/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 53. Power supply and reference decoupling (VREF+ connected to VDDA) 670) 95()9''$ )Q) 95()966$ DLF 1. VREF+ and VREF- inputs are both available on UFBGA176. VREF+ is also available on LQFP100, LQFP144, and LQFP176. When VREF+ and VREF- are not available, they are internally connected to VDDA and VSSA. 6.3.22 Temperature sensor characteristics Table 80. Temperature sensor characteristics Symbol TL(1) Parameter Min Typ Max Unit - 1 2 C - 2.5 mV/C Voltage at 25 C - 0.76 V Startup time - 6 10 s 10 - - s VSENSE linearity with temperature Avg_Slope(1) Average slope V25(1) tSTART (2) TS_temp(2) ADC sampling time when reading the temperature (1 C accuracy) 1. Guaranteed by characterization results. 2. Guaranteed by design. Table 81. Temperature sensor calibration values Symbol Parameter Memory address TS_CAL1 TS ADC raw data acquired at temperature of 30 C, VDDA= 3.3 V 0x1FFF 7A2C - 0x1FFF 7A2D TS_CAL2 TS ADC raw data acquired at temperature of 110 C, VDDA= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F 164/239 DocID024030 Rev 10 STM32F427xx STM32F429xx 6.3.23 Electrical characteristics VBAT monitoring characteristics Table 82. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit K R Resistor bridge for VBAT - 50 - Q Ratio on VBAT measurement - 4 - Error on Q -1 - +1 % ADC sampling time when reading the VBAT 1 mV accuracy 5 - - s Er (1) TS_vbat(2)(2) 1. Guaranteed by design. 2. Shortest sampling time can be determined in the application by multiple iterations. 6.3.24 Reference voltage The parameters given in Table 83 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. Table 83. internal reference voltage Symbol VREFINT TS_vrefint(1) VRERINT_s(2) Parameter Internal reference voltage Conditions Min Typ Max Unit -40 C < TA < +105 C 1.18 1.21 1.24 V 10 - - s - 3 5 mV ADC sampling time when reading the internal reference voltage Internal reference voltage spread over the temperature range VDD = 3V 10mV TCoeff(2) Temperature coefficient - 30 50 ppm/C tSTART(2) Startup time - 6 10 s 1. Shortest sampling time can be determined in the application by multiple iterations. 2. Guaranteed by design, not tested in production Table 84. Internal reference voltage calibration values Symbol VREFIN_CAL Parameter Raw data acquired at temperature of 30 C VDDA = 3.3 V DocID024030 Rev 10 Memory address 0x1FFF 7A2A - 0x1FFF 7A2B 165/239 198 Electrical characteristics 6.3.25 STM32F427xx STM32F429xx DAC electrical characteristics Table 85. DAC characteristics Symbol Parameter Conditions Min Typ VDDA Analog supply voltage - 1.7(1) - 3.6 V - VREF+ Reference supply voltage - 1.7(1) - 3.6 V VREF+ VDDA VSSA Ground - 0 - 0 V - 5 - - RLOAD(2) Resistive load RLOAD connected DAC output to VSSA buffer ON R LOAD connected to VDDA Max Unit Comments k 25 - - - - 15 When the buffer is OFF, the Minimum resistive load k between DAC_OUT and VSS to have a 1% accuracy is 1.5 M CLOAD(2) Capacitive load - - - 50 Maximum capacitive load at pF DAC_OUT pin (when the buffer is ON). DAC_O Lower DAC_OUT UT (2) voltage with buffer ON min - 0.2 - - V DAC_O Higher DAC_OUT UT voltage with buffer ON (2) max - - - VDDA - 0.2 V DAC_O Lower DAC_OUT UT voltage with buffer min(2) OFF - - 0.5 - mV - VREF+ - 1LSB RO(2) Impedance output with buffer OFF DAC_O Higher DAC_OUT UT voltage with buffer max(2) OFF DAC DC VREF current consumption in IVREF+(4) quiescent mode (Standby mode) 166/239 - - - - 170 It gives the maximum output excursion of the DAC. V 240 A - - 50 DocID024030 Rev 10 75 It gives the maximum output excursion of the DAC. It corresponds to 12-bit input code (0x0E0) to (0xF1C) at VREF+ = 3.6 V and (0x1C7) to (0xE38) at VREF+ = 1.7 V With no load, worst code (0x800) at VREF+ = 3.6 V in terms of DC consumption on the inputs With no load, worst code (0xF1C) at VREF+ = 3.6 V in terms of DC consumption on the inputs STM32F427xx STM32F429xx Electrical characteristics Table 85. DAC characteristics (continued) Symbol Parameter DAC DC VDDA IDDA(4) current consumption in quiescent mode(3) Conditions Min Typ Max Unit Comments - - 280 380 A 625 With no load, worst code (0xF1C) at VREF+ = 3.6 V in A terms of DC consumption on the inputs With no load, middle code (0x800) on the inputs - - 475 - - - - - - 2 LSB Given for the DAC in 12-bit configuration. - - - 1 LSB Given for the DAC in 10-bit configuration. - - - 4 LSB Given for the DAC in 12-bit configuration. - - - 10 mV Given for the DAC in 12-bit configuration - - - 3 LSB Given for the DAC in 10-bit at VREF+ = 3.6 V - - - 12 LSB Given for the DAC in 12-bit at VREF+ = 3.6 V Gain Gain error error(4) - - - 0.5 % Given for the DAC in 12-bit configuration Settling time (full scale: for a 10-bit input code transition tSETTLIN between the lowest (4) and the highest input G codes when DAC_OUT reaches final value 4LSB - - 3 6 s CLOAD 50 pF, RLOAD 5 k Total Harmonic THD(4) Distortion Buffer ON - - - - dB CLOAD 50 pF, RLOAD 5 k Max frequency for a correct DAC_OUT Update change when small rate(2) variation in the input code (from code i to i+1LSB) - - - 1 MS/ CLOAD 50 pF, s RLOAD 5 k Differential non linearity Difference DNL(4) between two consecutive code1LSB) INL(4) Integral non linearity (difference between measured value at Code i and the value at Code i on a line drawn between Code 0 and last Code 1023) Offset error (difference between Offset(4) measured value at Code (0x800) and the ideal value = VREF+/2) DocID024030 Rev 10 0.5 LSB Given for the DAC in 10-bit configuration. 167/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 85. DAC characteristics (continued) Symbol Conditions Min Typ Wakeup time from off tWAKEUP( state (Setting the ENx 4) bit in the DAC Control register) - - 6.5 10 CLOAD 50 pF, RLOAD 5 k s input code between lowest and highest possible ones. Power supply rejection ratio (to VDDA) (static DC measurement) - - -67 -40 dB No RLOAD, CLOAD = 50 pF PSRR+ (2) Parameter Max Unit Comments 1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.17.2: Internal reset OFF). 2. Guaranteed by design. 3. The quiescent mode corresponds to a state where the DAC maintains a stable output level to ensure that no dynamic consumption occurs. 4. Guaranteed by characterization. Figure 54. 12-bit buffered /non-buffered DAC %XIIHUHGQRQEXIIHUHG'$& %XIIHU 5/2$' ELW GLJLWDOWR DQDORJ FRQYHUWHU '$&[B287 &/2$' DLD 1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the DAC_CR register. 168/239 DocID024030 Rev 10 STM32F427xx STM32F429xx 6.3.26 Electrical characteristics FMC characteristics Unless otherwise specified, the parameters given in Table 86 to Table 101 for the FMC interface are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage conditions summarized in Table 17, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 10 except at VDD range 1.7 to 2.1V where OSPEEDRy[1:0] = 11 * Measurement points are done at CMOS levels: 0.5VDD Refer to Section 6.3.17: I/O port characteristics for more details on the input/output characteristics. Asynchronous waveforms and timings Figure 55 through Figure 58 represent asynchronous waveforms and Table 86 through Table 93 provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration: * AddressSetupTime = 0x1 * AddressHoldTime = 0x1 * DataSetupTime = 0x1 (except for asynchronous NWAIT mode , DataSetupTime = 0x5) * BusTurnAroundDuration = 0x0 * For SDRAM memories, VDD ranges from 2.7 to 3.6 V and maximum frequency FMC_SDCLK = 90 MHz * For Mobile LPSDR SDRAM memories, VDD ranges from 1.7 to 1.95 V and maximum frequency FMC_SDCLK = 84 MHz DocID024030 Rev 10 169/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 55. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms TW.% &-#?.% TV./%?.% T W./% T H.%?./% &-#?./% &-#?.7% TV!?.% &-#?!;= T H!?./% !DDRESS TV",?.% T H",?./% &-#?.",;= T H$ATA?.% T SU$ATA?./% TH$ATA?./% T SU$ATA?.% $ATA &-#?$;= T V.!$6?.% TW.!$6 &-#?.!$6 &-#?.7!)4 TH.%?.7!)4 TSU.7!)4?.% -36 1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used. Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2) Symbol Min Max Unit 2THCLK - 0.5 2 THCLK+0.5 ns 0 1 ns 2THCLK 2THCLK+ 0.5 ns FMC_NOE high to FMC_NE high hold time 0 - ns FMC_NEx low to FMC_A valid - 2 ns th(A_NOE) Address hold time after FMC_NOE high 0 - ns tv(BL_NE) FMC_NEx low to FMC_BL valid - 2 ns th(BL_NOE) FMC_BL hold time after FMC_NOE high 0 - ns tsu(Data_NE) Data to FMC_NEx high setup time THCLK + 2.5 - ns THCLK +2 - ns tw(NE) tv(NOE_NE) tw(NOE) th(NE_NOE) tv(A_NE) tsu(Data_NOE) 170/239 Parameter FMC_NE low time FMC_NEx low to FMC_NOE low FMC_NOE low time Data to FMC_NOEx high setup time DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2) (continued) Symbol Parameter Min Max Unit th(Data_NOE) Data hold time after FMC_NOE high 0 - ns th(Data_NE) Data hold time after FMC_NEx high 0 - ns tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0 ns FMC_NADV low time - THCLK +1 ns tw(NADV) 1. CL = 30 pF. 2. Guaranteed by characterization results. Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR read NWAIT timings(1)(2) Symbol Min Max FMC_NE low time 7THCLK+0.5 7THCLK+1 FMC_NWE low time 5THCLK - 1.5 5THCLK +2 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK+1.5 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK+1 - tw(NE) tw(NOE) Parameter Unit ns 1. CL = 30 pF. 2. Guaranteed by characterization results. DocID024030 Rev 10 171/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 56. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms TW.% &-#?.%X &-#?./% TV.7%?.% TW.7% T H.%?.7% &-#?.7% TV!?.% &-#?!;= TH!?.7% !DDRESS TV",?.% &-#?.",;= TH",?.7% .", TV$ATA?.% TH$ATA?.7% $ATA &-#?$;= T V.!$6?.% &-#?.!$6 TW.!$6 &-#?.7!)4 TH.%?.7!)4 TSU.7!)4?.% -36 1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used. Table 88. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2) Symbol tw(NE) tv(NWE_NE) tw(NWE) th(NE_NWE) tv(A_NE) Parameter FMC_NE low time FMC_NEx low to FMC_NWE low FMC_NWE low time FMC_NWE high to FMC_NE high hold time FMC_NEx low to FMC_A valid th(A_NWE) Address hold time after FMC_NWE high tv(BL_NE) FMC_NEx low to FMC_BL valid Max Unit 3THCLK 3THCLK+1 ns THCLK - 0.5 THCLK+ 0.5 ns THCLK THCLK+ 0.5 ns THCLK +1.5 - ns - 0 ns THCLK+0.5 - ns - 1.5 ns THCLK+0.5 - ns th(BL_NWE) FMC_BL hold time after FMC_NWE high tv(Data_NE) Data to FMC_NEx low to Data valid - THCLK+ 2 ns th(Data_NWE) Data hold time after FMC_NWE high THCLK+0.5 - ns tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0.5 ns FMC_NADV low time - THCLK+ 0.5 ns tw(NADV) 1. CL = 30 pF. 2. Guaranteed by characterization results. 172/239 Min DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Table 89. Asynchronous non-multiplexed SRAM/PSRAM/NOR write NWAIT timings(1)(2) Symbol Parameter Min Max Unit FMC_NE low time 8THCLK+1 8THCLK+2 ns FMC_NWE low time 6THCLK - 1 6THCLK+2 ns tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK+1.5 - ns th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid tw(NE) tw(NWE) 4THCLK+1 ns 1. CL = 30 pF. 2. Guaranteed by characterization results. Figure 57. Asynchronous multiplexed PSRAM/NOR read waveforms TW.% &-#? .% TV./%?.% T H.%?./% &-#?./% T W./% &-#?.7% TH!?./% TV!?.% &-#? !;= !DDRESS TV",?.% TH",?./% &-#? .",;= .", TH$ATA?.% TSU$ATA?.% T V!?.% &-#? !$;= T V.!$6?.% TSU$ATA?./% TH$ATA?./% $ATA !DDRESS TH!$?.!$6 TW.!$6 &-#?.!$6 &-#?.7!)4 TH.%?.7!)4 TSU.7!)4?.% -36 DocID024030 Rev 10 173/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 90. Asynchronous multiplexed PSRAM/NOR read timings(1)(2) Symbol tw(NE) tv(NOE_NE) ttw(NOE) th(NE_NOE) tv(A_NE) tv(NADV_NE) tw(NADV) Parameter Min Max Unit 3THCLK - 1 3THCLK+0.5 ns 2THCLK - 0.5 2THCLK ns THCLK - 1 THCLK+1 ns FMC_NOE high to FMC_NE high hold time 1 - ns FMC_NEx low to FMC_A valid - 2 ns FMC_NEx low to FMC_NADV low 0 2 ns THCLK - 0.5 THCLK+0.5 ns FMC_NE low time FMC_NEx low to FMC_NOE low FMC_NOE low time FMC_NADV low time th(AD_NADV) FMC_AD(address) valid hold time after FMC_NADV high) 0 - ns th(A_NOE) Address hold time after FMC_NOE high THCLK - 0.5 - ns th(BL_NOE) FMC_BL time after FMC_NOE high 0 - ns FMC_NEx low to FMC_BL valid - 2 ns tv(BL_NE) tsu(Data_NE) Data to FMC_NEx high setup time THCLK+1.5 - ns tsu(Data_NOE) Data to FMC_NOE high setup time THCLK+1 - ns th(Data_NE) Data hold time after FMC_NEx high 0 - ns th(Data_NOE) Data hold time after FMC_NOE high 0 - ns 1. CL = 30 pF. 2. Guaranteed by characterization results. Table 91. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)(2) Symbol tw(NE) tw(NOE) Parameter Min Max Unit FMC_NE low time 8THCLK+0.5 8THCLK+2 ns FMC_NWE low time 5THCLK - 1 5THCLK +1.5 ns 5THCLK +1.5 - ns tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 1. CL = 30 pF. 2. Guaranteed by characterization results. 174/239 DocID024030 Rev 10 4THCLK+1 ns STM32F427xx STM32F429xx Electrical characteristics Figure 58. Asynchronous multiplexed PSRAM/NOR write waveforms TW.% &-#? .%X &-#?./% TW.7% TV.7%?.% T H.%?.7% &-#?.7% TH!?.7% TV!?.% &-#? !;= !DDRESS TV",?.% &-#? .",;= TH",?.7% .", T V!?.% T V$ATA?.!$6 !DDRESS &-#? !$;= TH$ATA?.7% $ATA TH!$?.!$6 T V.!$6?.% TW.!$6 &-#?.!$6 &-#?.7!)4 TH.%?.7!)4 TSU.7!)4?.% -36 Table 92. Asynchronous multiplexed PSRAM/NOR write timings(1)(2) Symbol tw(NE) tv(NWE_NE) tw(NWE) th(NE_NWE) tv(A_NE) tv(NADV_NE) tw(NADV) th(AD_NADV) Parameter Min Max Unit 4THCLK 4THCLK+0.5 ns THCLK - 1 THCLK+0.5 ns FMC_NWE low time 2THCLK 2THCLK+0.5 ns FMC_NWE high to FMC_NE high hold time THCLK - ns - 0 ns 0.5 1 ns THCLK - 0.5 THCLK+ 0.5 ns THCLK - 2 - ns FMC_NE low time FMC_NEx low to FMC_NWE low FMC_NEx low to FMC_A valid FMC_NEx low to FMC_NADV low FMC_NADV low time FMC_AD(adress) valid hold time after FMC_NADV high) th(A_NWE) Address hold time after FMC_NWE high THCLK - ns th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK - 2 - ns tv(BL_NE) FMC_NEx low to FMC_BL valid - 2 ns tv(Data_NADV) FMC_NADV high to Data valid - THCLK +1.5 ns th(Data_NWE) Data hold time after FMC_NWE high THCLK +0.5 - ns 1. CL = 30 pF. 2. Guaranteed by characterization results. DocID024030 Rev 10 175/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 93. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)(2) Symbol tw(NE) tw(NWE) Parameter Min Max Unit FMC_NE low time 9THCLK 9THCLK+0.5 ns FMC_NWE low time 7THCLK 7THCLK+2 ns 6THCLK+1.5 - ns 4THCLK-1 - ns tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 1. CL = 30 pF. 2. Guaranteed by characterization results. Synchronous waveforms and timings Figure 59 through Figure 62 represent synchronous waveforms and Table 94 through Table 97 provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration: * BurstAccessMode = FMC_BurstAccessMode_Enable; * MemoryType = FMC_MemoryType_CRAM; * WriteBurst = FMC_WriteBurst_Enable; * CLKDivision = 1; (0 is not supported, see the STM32F4xx reference manual : RM0090) * DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM In all timing tables, the THCLK is the HCLK clock period (with maximum FMC_CLK = 90 MHz). 176/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Figure 59. Synchronous multiplexed NOR/PSRAM read timings "53452. TW#,+ TW#,+ &-#?#,+ $ATA LATENCY TD#,+, .%X, &-#?.%X T D#,+, .!$6, TD#,+( .%X( TD#,+, .!$6( &-#?.!$6 TD#,+, !6 TD#,+( !)6 &-#?!;= TD#,+, ./%, TD#,+( ./%( &-#?./% T D#,+, !$6 &-#?!$;= TD#,+, !$)6 TSU!$6 #,+( !$;= TH#,+( !$6 TSU!$6 #,+( $ TSU.7!)46 #,+( &-#?.7!)4 7!)4#&' B 7!)40/, B TSU.7!)46 #,+( &-#?.7!)4 7!)4#&' B 7!)40/, B TSU.7!)46 #,+( TH#,+( !$6 $ TH#,+( .7!)46 TH#,+( .7!)46 TH#,+( .7!)46 -36 Table 94. Synchronous multiplexed NOR/PSRAM read timings(1)(2) Symbol tw(CLK) Parameter FMC_CLK period Min Max Unit 2THCLK - 1 - ns - 0 ns THCLK - ns td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) td(CLKH_NExH) FMC_CLK high to FMC_NEx high (x= 0...2) td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0 ns td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - ns td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16...25) - 0 ns td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16...25) 0 - ns td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - THCLK+0.5 ns td(CLKH-NOEH) FMC_CLK high to FMC_NOE high THCLK - 0.5 - ns td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 0.5 ns td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 - ns DocID024030 Rev 10 177/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 94. Synchronous multiplexed NOR/PSRAM read timings(1)(2) (continued) Symbol Parameter Min Max Unit tsu(ADV-CLKH) FMC_A/D[15:0] valid data before FMC_CLK high 5 - ns th(CLKH-ADV) FMC_A/D[15:0] valid data after FMC_CLK high 0 - ns tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 - ns th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 - ns 1. CL = 30 pF. 2. Guaranteed by characterization results. Figure 60. Synchronous multiplexed PSRAM write timings "53452. TW#,+ TW#,+ &-#?#,+ $ATA LATENCY TD#,+, .%X, TD#,+( .%X( &-#?.%X TD#,+, .!$6, TD#,+, .!$6( &-#?.!$6 TD#,+( !)6 TD#,+, !6 &-#?!;= TD#,+( .7%( TD#,+, .7%, &-#?.7% TD#,+, !$)6 TD#,+, !$6 &-#?!$;= TD#,+, $ATA TD#,+, $ATA !$;= $ $ &-#?.7!)4 7!)4#&' B 7!)40/, B TSU.7!)46 #,+( TH#,+( .7!)46 TD#,+( .",( &-#?.", -36 178/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Table 95. Synchronous multiplexed PSRAM write timings(1)(2) Symbol Min Max Unit 2THCLK - 1 - ns - 1.5 ns THCLK - ns td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0 ns td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - ns - 0 ns THCLK - ns - 0 ns THCLK -0.5 - ns tw(CLK) Parameter FMC_CLK period, VDD range= 2.7 to 3.6 V td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0...2) td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16...25) td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16...25) td(CLKL-NWEL) FMC_CLK low to FMC_NWE low t(CLKH-NWEH) FMC_CLK high to FMC_NWE high td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 3 ns td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 - ns td(CLKL-DATA) FMC_A/D[15:0] valid data after FMC_CLK low - 3 ns td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 0 - ns td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK -0.5 - ns tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 - ns th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 - ns 1. CL = 30 pF. 2. Guaranteed by characterization results. DocID024030 Rev 10 179/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 61. Synchronous non-multiplexed NOR/PSRAM read timings TW#,+ TW#,+ &-#?#,+ TD#,+, .%X, TD#,+( .%X( $ATA LATENCY &-#?.%X TD#,+, .!$6, TD#,+, .!$6( &-#?.!$6 TD#,+( !)6 TD#,+, !6 &-#?!;= TD#,+, ./%, TD#,+( ./%( &-#?./% TSU$6 #,+( TH#,+( $6 TSU$6 #,+( &-#?$;= TH#,+( $6 $ &-#?.7!)4 7!)4#&' B 7!)40/, B TSU.7!)46 #,+( TH#,+( .7!)46 TSU.7!)46 #,+( &-#?.7!)4 7!)4#&' B 7!)40/, B $ TSU.7!)46 #,+( T H#,+( .7!)46 TH#,+( .7!)46 -36 Table 96. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2) Symbol Min Max Unit 2THCLK - 1 - ns - 0.5 ns THCLK - ns FMC_CLK low to FMC_NADV low - 0 ns FMC_CLK low to FMC_NADV high 0 - ns td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16...25) - 0 ns td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16...25) THCLK - 0.5 - ns - THCLK+2 ns THCLK - 0.5 - ns 5 - ns tw(CLK) t(CLKL-NExL) td(CLKHNExH) td(CLKLNADVL) td(CLKLNADVH) Parameter FMC_CLK period FMC_CLK low to FMC_NEx low (x=0..2) FMC_CLK high to FMC_NEx high (x= 0...2) td(CLKL-NOEL) FMC_CLK low to FMC_NOE low td(CLKHNOEH) FMC_CLK high to FMC_NOE high tsu(DV-CLKH) FMC_D[15:0] valid data before FMC_CLK high 180/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Table 96. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2) (continued) Symbol Parameter th(CLKH-DV) FMC_D[15:0] valid data after FMC_CLK high t(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high th(CLKH- Max Unit 0 - ns 4 FMC_NWAIT valid after FMC_CLK high NWAIT) Min 0 1. CL = 30 pF. 2. Guaranteed by characterization results. Figure 62. Synchronous non-multiplexed PSRAM write timings TW#,+ TW#,+ &-#?#,+ TD#,+, .%X, TD#,+( .%X( $ATA LATENCY &-#?.%X TD#,+, .!$6, TD#,+, .!$6( &-#?.!$6 TD#,+( !)6 TD#,+, !6 &-#?!;= TD#,+, .7%, TD#,+( .7%( &-#?.7% TD#,+, $ATA TD#,+, $ATA $ &-#?$;= $ &-#?.7!)4 7!)4#&' B 7!)40/, B TSU.7!)46 #,+( TD#,+( .",( TH#,+( .7!)46 &-#?.", -36 Table 97. Synchronous non-multiplexed PSRAM write timings(1)(2) Symbol Min Max Unit 2THCLK - 1 - ns - 0.5 ns THCLK - ns td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0 ns td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - ns - 0 ns t(CLK) Parameter FMC_CLK period td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) t(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0...2) td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16...25) DocID024030 Rev 10 181/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 97. Synchronous non-multiplexed PSRAM write timings(1)(2) (continued) Symbol td(CLKH-AIV) td(CLKL-NWEL) Parameter Min Max Unit FMC_CLK high to FMC_Ax invalid (x=16...25) 0 - ns FMC_CLK low to FMC_NWE low - 0 ns THCLK -0.5 - ns td(CLKH-NWEH) FMC_CLK high to FMC_NWE high td(CLKL-Data) FMC_D[15:0] valid data after FMC_CLK low - 2.5 ns td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 0 - ns td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK -0.5 - ns tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 1. CL = 30 pF. 2. Guaranteed by characterization results. PC Card/CompactFlash controller waveforms and timings Figure 63 through Figure 68 represent synchronous waveforms, and Table 98 and Table 99 provide the corresponding timings. The results shown in this table are obtained with the following FMC configuration: * COM.FMC_SetupTime = 0x04; * COM.FMC_WaitSetupTime = 0x07; * COM.FMC_HoldSetupTime = 0x04; * COM.FMC_HiZSetupTime = 0x00; * ATT.FMC_SetupTime = 0x04; * ATT.FMC_WaitSetupTime = 0x07; * ATT.FMC_HoldSetupTime = 0x04; * ATT.FMC_HiZSetupTime = 0x00; * IO.FMC_SetupTime = 0x04; * IO.FMC_WaitSetupTime = 0x07; * IO.FMC_HoldSetupTime = 0x04; * IO.FMC_HiZSetupTime = 0x00; * TCLRSetupTime = 0; * TARSetupTime = 0. In all timing tables, the THCLK is the HCLK clock period. 182/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Figure 63. PC Card/CompactFlash controller waveforms for common memory read access &-#?.#%? &-#?.#%? TH.#%X !) TV.#%X ! &-#?!;= TH.#%X .2%' TH.#%X .)/2$ TH.#%X .)/72 TD.2%' .#%X TD.)/2$ .#%X &-#?.2%' &-#?.)/72 &-#?.)/2$ &-#?.7% TD.#%? ./% &-#?./% TW./% TSU$ ./% TH./% $ &-#?$;= -36 1. FMC_NCE4_2 remains high (inactive during 8-bit access. Figure 64. PC Card/CompactFlash controller waveforms for common memory write access &-#?.#%? &-#?.#%? (IGH TV.#%? ! TH.#%? !) &-#?!;= TH.#%? .2%' TH.#%? .)/2$ TH.#%? .)/72 TD.2%' .#%? TD.)/2$ .#%? &-#?.2%' &-#?.)/72 &-#?.)/2$ TD.#%? .7% TW.7% TD.7% .#%? &-#?.7% &-#?./% -%-X(): TD$ .7% TV.7% $ TH.7% $ &-#?$;= -36 DocID024030 Rev 10 183/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 65. PC Card/CompactFlash controller waveforms for attribute memory read access &-#?.#%? TV.#%? ! &-#?.#%? TH.#%? !) (IGH &-#?!;= &-#?.)/72 &-#?.)/2$ TD.2%' .#%? TH.#%? .2%' &-#?.2%' &-#?.7% TD.#%? ./% TW./% TD./% .#%? &-#?./% TSU$ ./% TH./% $ &-#?$;= -36 1. Only data bits 0...7 are read (bits 8...15 are disregarded). 184/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Figure 66. PC Card/CompactFlash controller waveforms for attribute memory write access &-#?.#%? &-#?.#%? (IGH TV.#%? ! TH.#%? !) &-#?!;= &-#?.)/72 &-#?.)/2$ TD.2%' .#%? TH.#%? .2%' &-#?.2%' TD.#%? .7% TW.7% &-#?.7% TD.7% .#%? &-#?./% TV.7% $ &-#?$;= -36 1. Only data bits 0...7 are driven (bits 8...15 remains Hi-Z). Figure 67. PC Card/CompactFlash controller waveforms for I/O space read access &-#?.#%? &-#?.#%? TH.#%? !) TV.#%X ! &-#?!;= &-#?.2%' &-#?.7% &-#?./% &-#?.)/72 TW.)/2$ TD.)/2$ .#%? &-#?.)/2$ TSU$ .)/2$ TD.)/2$ $ &-#?$;= -36 DocID024030 Rev 10 185/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 68. PC Card/CompactFlash controller waveforms for I/O space write access &-#?.#%? &-#?.#%? TV.#%X ! TH.#%? !) &-#?!;= &-#?.2%' &-#?.7% &-#?./% &-#?.)/2$ T D.#%? .)/72 TW.)/72 &-#?.)/72 !44X(): TV.)/72 $ TH.)/72 $ &-#?$;= -36 Table 98. Switching characteristics for PC Card/CF read and write cycles in attribute/common space(1)(2) Symbol Parameter Min Max Unit tv(NCEx-A) FMC_Ncex low to FMC_Ay valid - 0 ns th(NCEx_AI) FMC_NCEx high to FMC_Ax invalid 0 - ns td(NREG-NCEx) FMC_NCEx low to FMC_NREG valid - 1 ns th(NCEx-NREG) FMC_NCEx high to FMC_NREG invalid THCLK - 2 - ns td(NCEx-NWE) FMC_NCEx low to FMC_NWE low - 5THCLK ns 8THCLK - 0.5 8THCLK+0.5 ns tw(NWE) FMC_NWE low width td(NWE_NCEx) FMC_NWE high to FMC_NCEx high 5THCLK+1 - ns tV(NWE-D) FMC_NWE low to FMC_D[15:0] valid - 0 ns th(NWE-D) FMC_NWE high to FMC_D[15:0] invalid 9THCLK - 0.5 - ns td(D-NWE) FMC_D[15:0] valid before FMC_NWE high 13THCLK - 3 td(NCEx-NOE) tw(NOE) td(NOE_NCEx) tsu (D-NOE) th(NOE-D) FMC_NCEx low to FMC_NOE low FMC_NOE low width FMC_NOE high to FMC_NCEx high FMC_D[15:0] valid data before FMC_NOE high FMC_NOE high to FMC_D[15:0] invalid 1. CL = 30 pF. 2. Guaranteed by characterization results. 186/239 DocID024030 Rev 10 ns - 5THCLK ns 8 THCLK - 0.5 8 THCLK+0.5 ns 5THCLK - 1 - ns THCLK - ns 0 - ns STM32F427xx STM32F429xx Electrical characteristics Table 99. Switching characteristics for PC Card/CF read and write cycles in I/O space(1)(2) Symbol Parameter tw(NIOWR) FMC_NIOWR low width tv(NIOWR-D) FMC_NIOWR low to FMC_D[15:0] valid th(NIOWR-D) FMC_NIOWR high to FMC_D[15:0] invalid Min Max Unit 8THCLK - 0.5 - ns - 0 ns 9THCLK - 2 - ns - 5THCLK ns 5THCLK - ns - 5THCLK ns 6THCLK+2 - ns 8THCLK - 0.5 8THCLK+0.5 ns THCLK - ns 0 - ns td(NCE4_1-NIOWR) FMC_NCE4_1 low to FMC_NIOWR valid th(NCEx-NIOWR) FMC_NCEx high to FMC_NIOWR invalid td(NIORD-NCEx) FMC_NCEx low to FMC_NIORD valid th(NCEx-NIORD) FMC_NCEx high to FMC_NIORD) valid tw(NIORD) FMC_NIORD low width tsu(D-NIORD) FMC_D[15:0] valid before FMC_NIORD high td(NIORD-D) FMC_D[15:0] valid after FMC_NIORD high 1. CL = 30 pF. 2. Guaranteed by characterization results. NAND controller waveforms and timings Figure 69 through Figure 72 represent synchronous waveforms, and Table 100 and Table 101 provide the corresponding timings. The results shown in this table are obtained with the following FMC configuration: * COM.FMC_SetupTime = 0x01; * COM.FMC_WaitSetupTime = 0x03; * COM.FMC_HoldSetupTime = 0x02; * COM.FMC_HiZSetupTime = 0x01; * ATT.FMC_SetupTime = 0x01; * ATT.FMC_WaitSetupTime = 0x03; * ATT.FMC_HoldSetupTime = 0x02; * ATT.FMC_HiZSetupTime = 0x01; * Bank = FMC_Bank_NAND; * MemoryDataWidth = FMC_MemoryDataWidth_16b; * ECC = FMC_ECC_Enable; * ECCPageSize = FMC_ECCPageSize_512Bytes; * TCLRSetupTime = 0; * TARSetupTime = 0. In all timing tables, the THCLK is the HCLK clock period. DocID024030 Rev 10 187/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 69. NAND controller waveforms for read access &-#?.#%X !,% &-#?! #,% &-#?! &-#?.7% TD!,% ./% TH./% !,% &-#?./% .2% TSU$ ./% TH./% $ &-#?$;= -36 Figure 70. NAND controller waveforms for write access &-#?.#%X !,% &-#?! #,% &-#?! TH.7% !,% TD!,% .7% &-#?.7% &-#?./% .2% TV.7% $ TH.7% $ &-#?$;= -36 188/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Figure 71. NAND controller waveforms for common memory read access &-#?.#%X !,% &-#?! #,% &-#?! TH./% !,% TD!,% ./% &-#?.7% TW./% &-#?./% TSU$ ./% TH./% $ &-#?$;= -36 Figure 72. NAND controller waveforms for common memory write access &-#?.#%X !,% &-#?! #,% &-#?! TD!,% ./% TW.7% TH./% !,% &-#?.7% &-#?. /% TD$ .7% TV.7% $ TH.7% $ &-#?$;= -36 Table 100. Switching characteristics for NAND Flash read cycles(1) Symbol tw(N0E) Parameter FMC_NOE low width Min Max Unit 4THCLK - 0.5 4THCLK+0.5 ns tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 9 - ns th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 0 - ns td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 3THCLK - 0.5 ns th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK - 2 - ns 1. CL = 30 pF. DocID024030 Rev 10 189/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 101. Switching characteristics for NAND Flash write cycles(1) Symbol tw(NWE) Parameter FMC_NWE low width Min Max Unit 4THCLK 4THCLK+1 ns 0 - ns tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 3THCLK - 1 - ns td(D-NWE) FMC_D[15-0] valid before FMC_NWE high 5THCLK - 3 - ns - 3THCLK -0.5 ns 3THCLK - 1 - ns td(ALE-NWE) FMC_ALE valid before FMC_NWE low th(NWE-ALE) FMC_NWE high to FMC_ALE invalid 1. CL = 30 pF. SDRAM waveforms and timings Figure 73. SDRAM read access waveforms (CL = 1) &-#?3$#,+ TD3$#,+,?!DD# TH3$#,+,?!DD2 TD3$#,+,?!DD2 &-#?!>@ 2OW N #OL #OL #OLI #OLN TH3$#,+,?!DD# TH3$#,+,?3.$% TD3$#,+,?3.$% &-#?3$.%;= TD3$#,+,?.2!3 TH3$#,+,?.2!3 &-#?3$.2!3 TH3$#,+,?.#!3 TD3$#,+,?.#!3 &-#?3$.#!3 &-#?3$.7% TSU3$#,+(?$ATA &-#?$;= TH3$#,+(?$ATA $ATA $ATA $ATAI $ATAN -36 190/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Table 102. SDRAM read timings(1)(2) Symbol Parameter Min Max tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK+0.5 tsu(SDCLKH _Data) Data input setup time 2 - th(SDCLKH_Data) Data input hold time 0 - td(SDCLKL_Add) Address valid time - 1.5 td(SDCLKL- SDNE) Chip select valid time - 0.5 th(SDCLKL_SDNE) Chip select hold time 0 - td(SDCLKL_SDNRAS) SDNRAS valid time - 0.5 th(SDCLKL_SDNRAS) SDNRAS hold time 0 - td(SDCLKL_SDNCAS) SDNCAS valid time - 0.5 th(SDCLKL_SDNCAS) SDNCAS hold time 0 - Unit ns 1. CL = 30 pF on data and address lines. CL=15pF on FMC_SDCLK. 2. Guaranteed by characterization results. Table 103. LPSDR SDRAM read timings(1)(2) Symbol Parameter Min Max tW(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK+0.5 tsu(SDCLKH_Data) Data input setup time 2.5 - th(SDCLKH_Data) Data input hold time 0 - td(SDCLKL_Add) Address valid time - 1 td(SDCLKL_SDNE) Chip select valid time - 1 th(SDCLKL_SDNE) Chip select hold time 1 - td(SDCLKL_SDNRAS SDNRAS valid time - 1 th(SDCLKL_SDNRAS) SDNRAS hold time 1 - td(SDCLKL_SDNCAS) SDNCAS valid time - 1 th(SDCLKL_SDNCAS) SDNCAS hold time 1 - Unit ns 1. CL = 10 pF. 2. Guaranteed by characterization results. DocID024030 Rev 10 191/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 74. SDRAM write access waveforms &-#?3$#,+ TD3$#,+,?!DD# TH3$#,+,?!DD2 TD3$#,+,?!DD2 &-#?!>@ 2OW N #OL #OL #OLI #OLN TH3$#,+,?!DD# TH3$#,+,?3.$% TD3$#,+,?3.$% &-#?3$.%;= TH3$#,+,?.2!3 TD3$#,+,?.2!3 &-#?3$.2!3 TD3$#,+,?.#!3 TH3$#,+,?.#!3 TD3$#,+,?.7% TH3$#,+,?.7% &-#?3$.#!3 &-#?3$.7% TD3$#,+,?$ATA &-#?$;= TD3$#,+,?.", $ATA $ATA $ATAI $ATAN TH3$#,+,?$ATA &-#?.",;= -36 192/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Electrical characteristics Table 104. SDRAM write timings(1)(2) Symbol Parameter Min Max tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK+0.5 td(SDCLKL _Data) Data output valid time - 3.5 th(SDCLKL _Data) Data output hold time 0 - td(SDCLKL_Add) Address valid time - 1.5 td(SDCLKL_SDNWE) SDNWE valid time - 1 th(SDCLKL_SDNWE) SDNWE hold time 0 - td(SDCLKL_ SDNE) Chip select valid time - 0.5 th(SDCLKL-_SDNE) Chip select hold time 0 - td(SDCLKL_SDNRAS) SDNRAS valid time - 2 th(SDCLKL_SDNRAS) SDNRAS hold time 0 - td(SDCLKL_SDNCAS) SDNCAS valid time - 0.5 td(SDCLKL_SDNCAS) SDNCAS hold time 0 - td(SDCLKL_NBL) NBL valid time - 0.5 th(SDCLKL_NBL) NBLoutput time 0 - Unit ns 1. CL = 30 pF on data and address lines. CL=15pF on FMC_SDCLK. 2. Guaranteed by characterization results. Table 105. LPSDR SDRAM write timings(1)(2) Symbol Parameter Min Max tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK+0.5 td(SDCLKL _Data) Data output valid time - 5 th(SDCLKL _Data) Data output hold time 2 - td(SDCLKL_Add) Address valid time - 2.8 td(SDCLKL-SDNWE) SDNWE valid time - 2 th(SDCLKL-SDNWE) SDNWE hold time 1 - td(SDCLKL- SDNE) Chip select valid time - 1.5 th(SDCLKL- SDNE) Chip select hold time 1 - td(SDCLKL-SDNRAS) SDNRAS valid time - 1.5 th(SDCLKL-SDNRAS) SDNRAS hold time 1.5 - td(SDCLKL-SDNCAS) SDNCAS valid time - 1.5 td(SDCLKL-SDNCAS) SDNCAS hold time 1.5 - td(SDCLKL_NBL) NBL valid time - 1.5 th(SDCLKL-NBL) NBL output time 1.5 - Unit ns 1. CL = 10 pF. 2. Guaranteed by characterization results. DocID024030 Rev 10 193/239 198 Electrical characteristics 6.3.27 STM32F427xx STM32F429xx Camera interface (DCMI) timing specifications Unless otherwise specified, the parameters given in Table 106 for DCMI are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage summarized in Table 17, with the following configuration: * DCMI_PIXCLK polarity: falling * DCMI_VSYNC and DCMI_HSYNC polarity: high * Data formats: 14 bits Table 106. DCMI characteristics Symbol Parameter Min Max - 0.4 - 54 MHz Pixel clock input duty cycle 30 70 % tsu(DATA) Data input setup time 2 - th(DATA) Data input hold time 2.5 - tsu(HSYNC) tsu(VSYNC) DCMI_HSYNC/DCMI_VSYNC input setup time 0.5 - th(HSYNC) th(VSYNC) DCMI_HSYNC/DCMI_VSYNC input hold time 1 - Frequency ratio DCMI_PIXCLK/fHCLK DCMI_PIXCLK Pixel clock input DPixel Unit ns Figure 75. DCMI timing diagram '&0,B3,;&/. '&0,B3,;&/. WVX +6<1& WK +6<1& '&0,B+6<1& WVX 96<1& WK +6<1& '&0,B96<1& WVX '$7$ WK '$7$ '$7$>@ 069 194/239 DocID024030 Rev 10 STM32F427xx STM32F429xx 6.3.28 Electrical characteristics LCD-TFT controller (LTDC) characteristics Unless otherwise specified, the parameters given in Table 107 for LCD-TFT are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage summarized in Table 17, with the following configuration: * LCD_CLK polarity: high * LCD_DE polarity : low * LCD_VSYNC and LCD_HSYNC polarity: high * Pixel formats: 24 bits Table 107. LTDC characteristics Symbol Parameter Min Max Unit fCLK LTDC clock output frequency - 83 MHz DCLK LTDC clock output duty cycle 45 55 % tw(CLKH) tw(CLKL) Clock High time, low time tv(DATA) Data output valid time - 3.5 th(DATA) Data output hold time 1.5 - HSYNC/VSYNC/DE output valid time - 2.5 HSYNC/VSYNC/DE output hold time 2 - tv(HSYNC) tv(VSYNC) tw(CLK)/2 - 0.5 tw(CLK)/2+0.5 ns tv(DE) th(HSYNC) th(VSYNC) th(DE) DocID024030 Rev 10 195/239 198 Electrical characteristics STM32F427xx STM32F429xx Figure 76. LCD-TFT horizontal timing diagram W&/. /&'B&/. /&'B96<1& WY +6<1& WY +6<1& /&'B+6<1& WK '( WY '( /&'B'( WY '$7$ /&'B5>@ /&'B*>@ /&'B%>@ 1JYFM 1JYFM 1JYFM / WK '$7$ +6<1& +RUL]RQWDO ZLGWK EDFNSRUFK $FWLYHZLGWK +RUL]RQWDO EDFNSRUFK 2QHOLQH 069 Figure 77. LCD-TFT vertical timing diagram W&/. /&'B&/. WY 96<1& WY 96<1& /&'B96<1& /&'B5>@ /&'B*>@ /&'B%>@ - LINES DATA 96<1& 9HUWLFDO ZLGWK EDFNSRUFK $FWLYHZLGWK 9HUWLFDO EDFNSRUFK 2QHIUDPH 069 196/239 DocID024030 Rev 10 STM32F427xx STM32F429xx 6.3.29 Electrical characteristics SD/SDIO MMC card host interface (SDIO) characteristics Unless otherwise specified, the parameters given in Table 108 for the SDIO/MMC interface are derived from tests performed under the ambient temperature, fPCLK2 frequency and VDD supply voltage conditions summarized in Table 17, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 10 * Capacitive load C = 30 pF * Measurement points are done at CMOS levels: 0.5VDD Refer to Section 6.3.17: I/O port characteristics for more details on the input/output characteristics. Figure 78. SDIO high-speed mode Figure 79. SD default mode DocID024030 Rev 10 197/239 198 Electrical characteristics STM32F427xx STM32F429xx Table 108. Dynamic characteristics: SD / MMC characteristics(1)(2) Symbol Parameter Conditions Min fPP Clock frequency in data transfer mode 0 - SDIO_CK/fPCLK2 frequency ratio - tW(CKL) Clock low time fpp =48 MHz tW(CKH) Clock high time fpp =48 MHz Typ Max Unit 48 MHz - 8/3 - 8.5 9 - 8.3 10 - ns CMD, D inputs (referenced to CK) in MMC and SD HS mode tISU Input setup time HS fpp =48 MHz 3.5 - - tIH Input hold time HS fpp =48 MHz 0 - - ns CMD, D outputs (referenced to CK) in MMC and SD HS mode tOV Output valid time HS fpp =48 MHz - 4.5 7 tOH Output hold time HS fpp =48 MHz 3 - - ns CMD, D inputs (referenced to CK) in SD default mode tISUD Input setup time SD fpp =24 MHz 1.5 - - tIHD Input hold time SD fpp =24 MHz 0.5 - - ns CMD, D outputs (referenced to CK) in SD default mode tOVD Output valid default time SD fpp =24 MHz - 4.5 6.5 tOHD Output hold default time SD fpp =24 MHz 3.5 - - ns 1. Guaranteed by characterization results. 2. VDD = 2.7 to 3.6 V. 6.3.30 RTC characteristics Table 109. RTC characteristics 198/239 Symbol Parameter - fPCLK1/RTCCLK frequency ratio Conditions Any read/write operation from/to an RTC register DocID024030 Rev 10 Min Max 4 - Package information 7 STM32F427xx STM32F429xx Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 7.1 LQFP100 package information Figure 80. LQFP100 -100-pin, 14 x 14 mm low-profile quad flat package outline MM C ! ! ! 3%!4).' 0,!.% # '!5'% 0,!.% $ , $ ! + CCC # , $ 0). )$%.4)&)#!4)/. E 1. Drawing is not to scale. 198/239 % % % B DocID024030 Rev 10 ,?-%?6 STM32F427xx STM32F429xx Package information Table 110. LQPF100 100-pin, 14 x 14 mm low-profile quad flat package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A - - 1.600 - - 0.0630 A1 0.050 - 0.150 0.0020 - 0.0059 A2 1.350 1.400 1.450 0.0531 0.0551 0.0571 b 0.170 0.220 0.270 0.0067 0.0087 0.0106 c 0.090 - 0.200 0.0035 - 0.0079 D 15.800 16.000 16.200 0.6220 0.6299 0.6378 D1 13.800 14.000 14.200 0.5433 0.5512 0.5591 D3 - 12.000 - - 0.4724 - E 15.800 16.000 16.200 0.6220 0.6299 0.6378 E1 13.800 14.000 14.200 0.5433 0.5512 0.5591 E3 - 12.000 - - 0.4724 - e - 0.500 - - 0.0197 - L 0.450 0.600 0.750 0.0177 0.0236 0.0295 L1 - 1.000 - - 0.0394 - k 0.0 3.5 7.0 0.0 3.5 7.0 ccc - - 0.080 - - 0.0031 1. Values in inches are converted from mm and rounded to 4 decimal digits. DocID024030 Rev 10 199/239 232 Package information STM32F427xx STM32F429xx Figure 81. LQPF100 - 100-pin, 14 x 14 mm low-profile quad flat recommended footprint AIC 1. Dimensions are expressed in millimeters. 200/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Package information Device marking for LQFP100 The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which depend on assembly location, are not indicated below. Figure 82. LQFP100 marking example (package top view) 3URGXFWLGHQWLILFDWLRQ 45.' 5HYLVLRQFRGH 7*53 'DWHFRGH \HDUZHHN :88 3LQ LGHQWLILHU 67ORJR DLG 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering Samples to run qualification activity. DocID024030 Rev 10 201/239 232 Package information 7.2 STM32F427xx STM32F429xx WLCSP143 package information Figure 83. WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale package outline $EDOOORFDWLRQ H EEE ) * 'HWDLO$ H H H $ $ $ %RWWRPYLHZ %XPSVLGH 6LGHYLHZ ' %XPS $ HHH $ ( E FFF GGG $RULHQWDWLRQ UHIHUHQFH 7RSYLHZ :DIHUEDFNVLGH = ;< = 6HDWLQJ SODQH 'HWDLO$ 5RWDWHG DDD $:(B0(B9 1. Drawing is not to scale. 202/239 DocID024030 Rev 10 STM32F427xx STM32F429xx Package information Table 111. WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A 0.525 0.555 0.585 0.0207 0.0219 0.0230 A1 0.155 0.175 0.195 - 0.0069 - A2 - 0.380 - - 0.0150 - - 0.025 - - 0.0010 - b(3) 0.220 0.250 0.280 0.0087 0.0098 0.0110 D 4.486 4.521 4.556 0.1766 0.1780 0.1794 E 5.512 5.547 5.582 0.2170 0.2184 0.2198 e - 0.400 - - 0.0157 - e1 - 4.000 - - 0.1575 - e2 - 4.800 - - 0.1890 - F - 0.2605 - - 0.0103 - G - 0.3735 - - 0.0147 - aaa - - 0.100 - - 0.0039 bbb - - 0.100 - - 0.0039 ccc - - 0.100 - - 0.0039 ddd - - 0.050 - - 0.0020 eee - - 0.050 - - 0.0020 A3 (2) 1. Values in inches are converted from mm and rounded to 4 decimal digits. 2. Back side coating. 3. Dimension is measured at the maximum bump diameter parallel to primary datum Z. Figure 84. WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale recommended footprint 'SDG 'VP DocID024030 Rev 10 069 203/239 232 Package information STM32F427xx STM32F429xx Table 112. WLCSP143 recommended PCB design rules (0.4 mm pitch) Dimension Recommended values Pitch 0.4 260 m max. (circular) Dpad 220 m recommended Dsm 300 m min. (for 260 m diameter pad) PCB pad design Non-solder mask defined via underbump allowed. Device marking for WLCSP143 The following figure gives an example of topside marking orientation versus ball A 1 identifier location. Other optional marking or inset/upset marks, which depend on assembly location, are not indicated below. Figure 85. WLCSP143 marking example (package top view) EDOO$ 3URGXFW LGHQWLILFDWLRQ 67)=,< 'DWHFRGH 1.7 V in Table 58: I/O AC characteristics. Updated conditions in Table 62: SPI dynamic characteristics. Added ZDRV in Table 67: USB OTG full speed electrical characteristics Removed note 3 in Table 80: Temperature sensor characteristics. Added Figure 82: LQFP100 marking example (package top view), Figure 85: WLCSP143 marking example (package top view), Figure 88: LQFP144 marking example (package top view), Figure 91: LQFP176 marking (package top view), Figure 94: LQFP208 marking example (package top view), Figure 97: UFBGA169 marking example (package top view) and Figure 100: UFBGA176+25 marking example (package top view). Added Appendix A: Recommendations when using internal reset OFF. Removed Internal reset OFF hardware connection appendix. DocID024030 Rev 10 235/239 238 Revision history STM32F427xx STM32F429xx Table 124. Document revision history Date Revision Changes Update SPI/IS2 in Table 2: STM32F427xx and STM32F429xx features and peripheral counts. Updated LQFP208 in Table 4: Regulator ON/OFF and internal reset ON/OFF availability. Updated Figure 19: Memory map. Changed PLS[2:0]=101 (falling edge) maximum value in Table 22: reset and power control block characteristics. 19-Feb-2015 236/239 5 Updated current consumption with all peripherals disabled in Table 24: Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator enabled except prefetch) or RAM. Updated note 1. in Table 28: Typical and maximum current consumptions in Standby mode. Updated tWUSTOP in Table 36: Low-power mode wakeup timings. Updated ESD standards and Table 53: ESD absolute maximum ratings. Updated Table 56: I/O static characteristics. Section : I2C interface characteristics: updated section introduction, removed Table I2C characteristics, Figure I2C bus AC waveforms and measurement circuit and Table SCL frequency; added Table 61: I2C analog filter characteristics. Updated measurement conditions in Table 62: SPI dynamic characteristics. Updated Figure 51: Typical connection diagram using the ADC. Updated Section : Device marking for LQFP100. Updated Figure 83: WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale package outline and Table 111: WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale package mechanical data; added Figure 84: WLCSP143 - 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale recommended footprint and Table 112: WLCSP143 recommended PCB design rules (0.4 mm pitch). Updated Figure 85: WLCSP143 marking example (package top view) and related note. Updated Section : Device marking for WLCSP143. Updated Section : Device marking for LQFP144. Updated Section : Device marking for LQFP176. Updated Figure 92: LQFP208 - 208-pin, 28 x 28 mm low-profile quad flat package outline; Updated Section : Device marking for LQFP208. Modified UFBGA169 pitch, updated Figure 95: UFBGA169 - 169-ball 7 x 7 mm 0.50 mm pitch, ultra fine pitch ball grid array package outline and Table 116: UFBGA169 - 169-ball 7 x 7 mm 0.50 mm pitch, ultra fine pitch ball grid array package mechanical data; updated Section : Device marking for LQFP208. updated Section : Device marking for UFBGA169, Section : Device marking for UFBGA176+25 and Section : Device marking for TFBGA176. Updated Z pin count in Table 122: Ordering information scheme. DocID024030 Rev 10 STM32F427xx STM32F429xx Revision history Table 124. Document revision history Date Revision Changes 6 Updated notes related to the minimum and maximum values guaranteed by design, characterization or test in production. Updated IDD_STOP_UDM in Table 27: Typical and maximum current consumptions in Stop mode. Removed note related to tests in production in Table 24: Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator enabled except prefetch) or RAM and Table 26: Typical and maximum current consumption in Sleep mode. Updated Table 41: HSI oscillator characteristics. Figure 31 renamed ACCHSI accuracy versus temperature and updated. Updated Figure 38: SPI timing diagram - slave mode and CPHA = 0. Updated Section : Ethernet characteristics. Updated Table 43: Main PLL characteristics, Table 44: PLLI2S (audio PLL) characteristics and Table 45: PLLISAI (audio and LCD-TFT PLL) characteristics. Removed note 1 in Table 75: ADC static accuracy at fADC = 18 MHz, Table 76: ADC static accuracy at fADC = 30 MHz and Table 77: ADC static accuracy at fADC = 36 MHz. Updated td(SDCLKL _Data) and th(SDCLKL _Data) in Table 104: SDRAM write timings. Added Figure 96: UFBGA169 - 169-ball, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array recommended footprint and Table 117: UFBGA169 recommended PCB design rules (0.5 mm pitch BGA). Added Figure 99: UFBGA176+25-ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array package recommended footprint and Table 119: UFBGA176+25 recommended PCB design rules (0.65 mm pitch BGA). 30-Nov-2015 7 Updated |VSSX -VSS| in Table 14: Voltage characteristics to add VREF-. Updated td(TXEN) and td(TXD) minimum value in Table 72: Dynamics characteristics: Ethernet MAC signals for RMII and Table 73: Dynamics characteristics: Ethernet MAC signals for MII. Added VREF- in Table 74: ADC characteristics. Added A1 minimum and maximum values in Table 111: WLCSP143 143-ball, 4.521x 5.547 mm, 0.4 mm pitch wafer level chip scale package mechanical data. Updated Figure 86: LQFP144-144-pin, 20 x 20 mm low-profile quad flat package outline. Updated Figure 98: UFBGA176+25 - ball 10 x 10 mm, 0.65 mm pitch ultra thin fine pitch ball grid array package outline and Table 118: UFBGA176+25 - ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array package mechanical data. Updated Figure 101: TFBGA216 216 ball 13 x 13 mm 0.8 mm pitch thin fine pitch ball grid array package outline and Table 120: TFBGA216 - 216 ball 13 x 13 mm 0.8 mm pitch thin fine pitch ball grid array package mechanical data. 21-Jan-2016 8 Updated Figure 22: Power supply scheme. Added td(TXD) values corresponding to 1.71 V < VDD < 3.6 V in Table 72: Dynamics characteristics: Ethernet MAC signals for RMII. 17-Sep-2015 DocID024030 Rev 10 237/239 238 Revision history STM32F427xx STM32F429xx Table 124. Document revision history Date Revision Changes Updated Figure 1: Compatible board design STM32F10xx/STM32F2xx/STM32F4xx for LQFP100 package. Added mission profile compliance with JEDEC JESD47 in Section 6.2: Absolute maximum ratings. 18-Jul-2016 9 Changed Figure 31 HSI deviation versus temperature to ACCHSI versus temperature. Updated RLOAD in Table 85: DAC characteristics. Added note 2. related to the position of the 0.1 F capacitor below Figure 37: Recommended NRST pin protection. Updated Figure 40: SPI timing diagram - master mode. Added reference to optional marking or inset/upset marks in all package device marking sections. Updated Figure 85: WLCSP143 marking example (package top view), Figure 88: LQFP144 marking example (package top view), Figure 91: LQFP176 marking (package top view), Figure 94: LQFP208 marking example (package top view). Updated Figure 98: UFBGA176+25 - ball 10 x 10 mm, 0.65 mm pitch ultra thin fine pitch ball grid array package outline and Table 118: UFBGA176+25 - ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array package mechanical data. 19-Jan-2018 238/239 10 Updated Arm wordmark and added Arm logo in Section 2: Description. Updated LDC-TFT feature on cover page. Updated Table 24: Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator enabled except prefetch) or RAM and Table 26: Typical and maximum current consumption in Sleep mode. RADC minimum value added in Table 74: ADC characteristics. LTDC clock output frequency changed to 83 MHz in Table 107: LTDC characteristics. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2018 STMicroelectronics - All rights reserved DocID024030 Rev 10 239/239 239