Rev: 1.02a 9/2002 1/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
300 MHz–200 MHz
1.8 V or 2.5 V VDD
1.8 V or 2.5 V I/O
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline
operation
• Dual Cycle Deselect (DCD) operation
• 1.8 V or 2.5 V +10%/–10% core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
Functional Description
Applications
The GS8160E18/32/36AT is a 18,874,368-bit (16,777,216-bit
for x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV
. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode pin
low places the RAM in Flow Through mode, causing output
data to bypass the Data Output Register. Holding FT high
places the RAM in Pipeline mode, activating the rising-edge-
triggered Data Output Register.
DCD Pipelined Reads
The GS8160E18/32/36AT is a DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. SCD (Single Cycle Deselect)
versions are also available. DCD SRAMs pipeline disable
commands to the same degree as read commands. DCD RAMs
hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of
clock.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS8160E18/32/36AT operates on a 1.8 V or 2.5 V power
supply. All inputs are 2.5 V and 1.8 V compatible. Separate
output power (VDDQ) pins are used to decouple output noise
from the internal circuits and are 2.5 V and 1.8 V compatible.
-300 -275 -250 -225 -200 Unit
Pipeline
3-1-1-1
tKQ
tCycle
2.2
3.3
2.4
3.6
2.5
4.0
2.7
4.4
3.0
5.0
ns
ns
2.5 V Curr (x18)
Curr (x32/x36)
320
375
300
345
275
320
250
295
230
265
mA
mA
1.8 V Curr (x18)
Curr (x32/x36)
320
370
300
340
275
315
250
285
225
260
mA
mA
Flow
Through
2-1-1-1
tKQ
tCycle
5.0
5.0
5.25
5.25
5.5
5.5
6.0
6.0
6.5
6.5
ns
ns
2.5 V Curr (x18)
Curr (x32/x36)
220
265
215
260
210
245
200
235
190
225
mA
mA
1.8 V Curr (x18)
Curr (x32/x36)
220
265
215
260
210
245
200
235
190
225
mA
mA
Rev: 1.02a 9/2002 2/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
GS8160E18A 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
VDDQ
VSS
DQB1
DQB2
VSS
VDDQ
DQB3
DQB4
VDD
NC
VSS
DQB5
DQB6
VDDQ
VSS
DQB7
DQB8
DQB9
VSS
VDDQ
VDDQ
VSS
DQA8
DQA7
VSS
VDDQ
DQA6
DQA5
VSS
NC
VDD
ZZ
DQA4
DQA3
VDDQ
VSS
DQA2
DQA1
VSS
VDDQ
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
A18
A17
A10
A11
A12
A13
A14
A16
A6
A7
E1
E2
NC
NC
BB
BA
E3
CK
GW
BW
VDD
VSS
G
ADSC
ADSP
ADV
A8
A9
A15
1M x 18
Top View
DQA9
A19
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC 10099989796959493929190898887868584838281
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
FT
Rev: 1.02a 9/2002 3/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
GS8160E32A 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
VDDQ
VSS
DQC4
DQC3
VSS
VDDQ
DQC2
DQC1
VDD
NC
VSS
DQD1
DQD2
VDDQ
VSS
DQD3
DQD4
DQD5
VSS
VDDQ
VDDQ
VSS
DQB4
DQB3
VSS
VDDQ
DQB2
DQB1
VSS
NC
VDD
ZZ
DQA1
DQA2
VDDQ
VSS
DQA3
DQA4
VSS
VDDQ
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
A18
A17
A10
A11
A12
A13
A14
A16
A6
A7
E1
E2
BD
BC
BB
BA
E3
CK
GW
BW
VDD
VSS
G
ADSC
ADSP
ADV
A8
A9
A15
512K x 32
Top View
DQB5
NC
DQB7
DQB8
DQB6
DQA6
DQA5
DQA8
DQA7
NC
DQC7
DQC8
DQC6
DQD6
DQD8
DQD7
NC
DQC5
NC 10099989796959493929190898887868584838281
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
FT
Rev: 1.02a 9/2002 4/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
GS8160E36A 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
VDDQ
VSS
DQC4
DQC3
VSS
VDDQ
DQC2
DQC1
VDD
NC
VSS
DQD1
DQD2
VDDQ
VSS
DQD3
DQD4
DQD5
VSS
VDDQ
VDDQ
VSS
DQB4
DQB3
VSS
VDDQ
DQB2
DQB1
VSS
NC
VDD
ZZ
DQA1
DQA2
VDDQ
VSS
DQA3
DQA4
VSS
VDDQ
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
A18
A17
A10
A11
A12
A13
A14
A16
A6
A7
E1
E2
BD
BC
BB
BA
E3
CK
GW
BW
VDD
VSS
G
ADSC
ADSP
ADV
A8
A9
A15
512K x 36
Top View
DQB5
DQB9
DQB7
DQB8
DQB6
DQA6
DQA5
DQA8
DQA7
DQA9
DQC7
DQC8
DQC6
DQD6
DQD8
DQD7
DQD9
DQC5
DQC9
10099989796959493929190898887868584838281
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
FT
Rev: 1.02a 9/2002 5/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
TQFP Pin Description
Symbol Type Description
A0, A1I Address field LSBs and Address Counter preset Inputs
A2–A18 I Address Inputs
A19 I Address Inputs
DQA1–DQA9
DQB1–DQB9
DQC1–DQC9
DQD1–DQD9
I/O Data Input and Output pins
NC No Connect
BW IByte Write—Writes all enabled bytes; active low
BA, BB, BC, BDI Byte Write Enable for DQA, DQB Data I/Os; active low
CK I Clock Input Signal; active high
GW I Global Write Enable—Writes all bytes; active low
E1, E3I Chip Enable; active low
E2I Chip Enable; active high
GI Output Enable; active low
ADV I Burst address counter advance enable; active low
ADSP, ADSC I Address Strobe (Processor, Cache Controller); active low
ZZ I Sleep Mode control; active high
FT I Flow Through or Pipeline mode; active low
LBO I Linear Burst Order mode; active low
VDD I Core power supply
VSS I I/O and Core Ground
VDDQ I Output driver power supply
NC —No Connect
Rev: 1.02a 9/2002 6/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
GS816018/32/36A Block Diagram
A1
A0 A0
A1
D0
D1 Q1
Q0
Counter
Load
DQ
DQ
Register
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
A0–An
LBO
ADV
CK
ADSC
ADSP
GW
BW
E1
G
ZZ Power Down
Control
Memory
Array
36 36
4
A
QD
E2
E3
DQx1–DQx9
Note: Only x36 version shown for simplicity.
1
BA
BB
BC
BD
FT
Rev: 1.02a 9/2002 7/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Note:
There is a pull-up device on the and FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will
operate in the default states as specified in the above tables.
Burst Counter Sequences
BPR 1999.05.18
Mode Pin Functions
Mode Name Pin
Name State Function
Burst Order Control LBO L Linear Burst
H Interleaved Burst
Output Register Control FT L Flow Through
H or NC Pipeline
Power Down Control ZZ L or NC Active
H Standby, IDD = ISB
Linear Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
Interleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0] A[1:0] A[1:0] A[1:0]
1st address 00 01 10 11
2nd address 01 10 11 00
3rd address 10 11 00 01
4th address 11 00 01 10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address 00 01 10 11
2nd address 01 00 11 10
3rd address 10 11 00 01
4th address 11 10 01 00
Rev: 1.02a 9/2002 8/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Byte Write Truth Table
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “C” and “D” are only available on the x32 and x36 versions.
Function GW BW BABBBCBDNotes
Read H H X X X X 1
Read HLHHHH1
Write byte a H L L H H H 2, 3
Write byte b H L H L H H 2, 3
Write byte c H L H H L H 2, 3, 4
Write byte d H L H H H L 2, 3, 4
Write all bytesHLLLLL2, 3, 4
Write all bytesLXXXXX
Rev: 1.02a 9/2002 9/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Synchronous Truth Table
Operation Address
Used
State
Diagram
Key5
E1E2ADSP ADSC ADV W3DQ4
Deselect Cycle, Power Down None X H X X L X X High-Z
Deselect Cycle, Power Down None X L F L X X X High-Z
Deselect Cycle, Power Down None X L F H L X X High-Z
Read Cycle, Begin Burst External R L T L X X X Q
Read Cycle, Begin Burst External R L T H L X F Q
Write Cycle, Begin Burst External W L T H L X T D
Read Cycle, Continue Burst Next CR X X H H L F Q
Read Cycle, Continue Burst Next CR H X X H L F Q
Write Cycle, Continue Burst Next CW X X H H L T D
Write Cycle, Continue Burst Next CW H X X H L T D
Read Cycle, Suspend Burst Current X X H H H F Q
Read Cycle, Suspend Burst Current H X X H H F Q
Write Cycle, Suspend Burst Current X X H H H T D
Write Cycle, Suspend Burst Current H X X H H T D
Notes:
1. X = Don’t Care, H = High, L = Low
2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1
3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
Rev: 1.02a 9/2002 10/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
First Write First Read
Burst Write Burst Read
Deselect
R
W
CRCW
X
X
WR
R
WR
XX
X
Simple Synchronous OperationSimple Burst Synchronous Operation
CR
R
CW CR
CR
Simplified State Diagram
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (BA, BB, BC, BD, BW, and GW)
control inputs, and that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
Rev: 1.02a 9/2002 11/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
First Write First Read
Burst Write Burst Read
Deselect
R
W
CRCW
X
X
WR
R
WR
X
X
X
CR
R
CW CR
CR
W
CW
W
CW
Simplified State Diagram with G
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
Rev: 1.02a 9/2002 12/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol Description Value Unit
VDD Voltage on VDD Pins –0.5 to 3.6 V
VDDQ Voltage in VDDQ Pins –0.5 to 3.6 V
VCK Voltage on Clock Input Pin –0.5 to 3.6 V
VI/O Voltage on I/O Pins –0.5 to VDDQ +0.5 (≤ 3.6 V max.) V
VIN Voltage on Other Input Pins –0.5 to VDD +0.5 (≤ 3.6 V max.) V
IIN Input Current on Any Pin +/–20 mA
IOUT Output Current on Any I/O Pin +/–20 mA
PDPackage Power Dissipation 1.5 W
TSTG Storage Temperature –55 to 125 oC
TBIAS Temperature Under Bias –55 to 125 oC
Rev: 1.02a 9/2002 13/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Power Supply Voltage Ranges
Parameter Symbol Min. Typ. Max. Unit Notes
2.5 V Supply Voltage VDD2 2.3 2.5 2.7 V
1.8 V Supply Voltage VDD1 1.6 1.8 2.0 V
2.5 V VDDQ I/O Supply Voltage VDDQ2 2.3 2.5 2.7 V
1.8 V VDDQ I/O Supply Voltage VDDQ1 1.6 1.8 2.0 V
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
VDDQ Range Logic Levels
Parameter Symbol Min. Typ. Max. Unit Notes
VDD Input High Voltage VIH 0.6*VDD —VDD + 0.3 V1
VDD Input Low Voltage VIL –0.3 —0.3*VDD V1
VDDQ I/O Input High Voltage VIHQ 0.6*VDD —VDDQ + 0.3 V1,3
VDDQ I/O Input Low Voltage VILQ –0.3 —0.3*VDD V1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures
Parameter Symbol Min. Typ. Max. Unit Notes
Ambient Temperature (Commercial Range Versions) TA02570°C2
Ambient Temperature (Industrial Range Versions) TA–40 25 85 °C2
Note:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
Rev: 1.02a 9/2002 14/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Note: These parameters are sample tested.
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter Symbol Test conditions Typ. Max. Unit
Input Capacitance CIN VIN = 0 V 45pF
Input/Output Capacitance CI/O VOUT = 0 V 67pF
Package Thermal Characteristics
Rating Layer Board Symbol Max Unit Notes
Junction to Ambient (at 200 lfm) single RΘJA 40 °C/W 1,2
Junction to Ambient (at 200 lfm) four RΘJA 24 °C/W 1,2
Junction to Case (TOP) —RΘJC 9°C/W 3
20% tKC
V
SS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
Rev: 1.02a 9/2002 15/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
AC Test Conditions
Parameter Conditions
Input high level VDD – 0.2 V
Input low level 0.2 V
Input slew rate 1 V/ns
Input reference level VDD/2
Output reference level VDDQ/2
Output load Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
DC Electrical Characteristics
Parameter Symbol Test Conditions Min Max
Input Leakage Current
(except mode pins) IIL VIN = 0 to VDD –1 uA 1 uA
ZZ Input Current IIN1
VDD ≥ VIN ≥ VIH
0 V ≤ VIN ≤ VIH
–1 uA
–1 uA
1 uA
100 uA
FT Input Current IIN2
VDD ≥ VIN ≥ VIL
0 V ≤ VIN ≤ VIL
–100 uA
–1 uA
1 uA
1 uA
Output Leakage Current IOL Output Disable, VOUT = 0 to VDD –1 uA 1 uA
Output High Voltage VOH2 IOH = –8 mA, VDDQ = 2.3 V VDDQ – 0.4 V —
Output High Voltage VOH1 IOH = –4 mA, VDDQ = 1.6 V VDDQ – 0.4 V —
Output Low Voltage VOL2 IOL = 8 mA, VDD = 2.3 V —0.4 V
Output Low Voltage VOL1 IOL = 4 mA, VDD = 1.6 V —0.4 V
DQ
VDDQ/2
50Ω30pF*
Output Load 1
* Distributed Test Jig Capacitance
Rev: 1.02a 9/2002 16/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Operating Currents
Notes:
1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
Parameter Test Conditions Mode Symbol
-300 -275 -250 -225 -200
Unit
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating
Current
2.5 V
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
(x32/
x36)
Pipeline IDD
IDDQ
345
30
355
30
315
30
325
30
290
30
600
60
265
30
275
30
240
25
250
25 mA
Flow
Through
IDD
IDDQ
195
30
205
30
190
30
200
30
185
30
195
30
175
30
185
30
165
25
175
25 mA
(x18)
Pipeline IDD
IDDQ
305
15
315
15
285
15
295
15
260
15
270
15
235
15
245
15
215
15
225
15 mA
Flow
Through
IDD
IDDQ
175
10
185
10
170
10
180
10
165
10
175
10
155
10
165
10
150
10
160
10 mA
Operating
Current
1.8 V
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
(x32/
x36)
Pipeline IDD
IDDQ
345
25
355
25
315
25
325
25
290
25
300
25
265
20
275
20
240
20
250
20 mA
Flow
Through
IDD
IDDQ
195
30
205
30
190
30
200
30
185
30
195
30
175
30
185
30
165
25
175
25 mA
(x18)
Pipeline IDD
IDDQ
305
15
315
15
285
15
295
15
260
15
270
15
235
15
245
15
215
10
225
10 mA
Flow
Through
IDD
IDDQ
175
10
185
10
170
10
180
10
165
10
175
10
155
10
165
10
150
10
160
10 mA
Standby
Current ZZ ≥ VDD – 0.2 V —
Pipeline ISB 35 45 35 45 35 45 35 45 35 45 mA
Flow
Through ISB 35 45 35 45 35 45 35 45 35 45 mA
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
—
Pipeline IDD 95 100 90 95 85 90 80 85 75 80 mA
Flow
Through IDD 70 75 70 75 60 65 60 65 50 55 mA
Rev: 1.02a 9/2002 17/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
AC Electrical Characteristics
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter Symbol -300 -275 -250 -225 -200 Unit
Min Max Min Max Min Max Min Max Min Max
Pipeline
Clock Cycle Time tKC 3.3 —3.7 —4.0 —4.4 —5.0 —ns
Clock to Output Valid tKQ —2.2 —2.4 —2.5 —2.7 —3.0 ns
Clock to Output Invalid tKQX 1.5 —1.5 —1.5 —1.5 —1.5 —ns
Clock to Output in Low-Z tLZ11.5 —1.5 —1.5 —1.5 —1.5 —ns
Setup time tS 1.1 —1.1 —1.2 —1.3 —1.4 —ns
Hold time tH 0.1 —0.1 —0.2 —0.3 —0.4 —ns
Flow
Through
Clock Cycle Time tKC 5.0 —5.25 —5.5 —6.0 —6.5 —ns
Clock to Output Valid tKQ —5.0 —5.25 —5.5 —6.0 —6.5 ns
Clock to Output Invalid tKQX 3.0 —3.0 —3.0 —3.0 —3.0 —ns
Clock to Output in Low-Z tLZ13.0 —3.0 —3.0 —3.0 —3.0 —ns
Setup time tS 1.4 —1.4 —1.5 —1.5 —1.5 —ns
Hold time tH 0.4 —0.4 —0.5 —0.5 —0.5 —ns
Clock HIGH Time tKH 1.3 —1.3 —1.3 —1.3 —1.3 —ns
Clock LOW Time tKL 1.5 —1.5 —1.5 —1.5 —1.5 —ns
Clock to Output in
High-Z tHZ11.5 2.3 1.5 2.3 1.5 2.3 1.5 2.5 1.5 3.0 ns
G to Output Valid tOE —2.3 —2.3 —2.3 —2.5 —3.0 ns
G to output in Low-Z tOLZ10—0—0—0—0—ns
G to output in High-Z tOHZ1—2.3 —2.3 —2.3 —2.5 —3.0 ns
ZZ setup time tZZS25—5—5—5—5—ns
ZZ hold time tZZH21—1—1—1—1—ns
ZZ recovery tZZR 20 —20 —20 —20 —20 —ns
Rev: 1.02a 9/2002 18/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
CK
ADSP
ADSC
ADV
GW
BW
G
WR2 WR3
WR1
WR1 WR2 WR3
tKC
Single Write Burst Write
D2AD2BD2CD2DD3A
D1A
tKL
tKH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH Write specified byte for 2A and all bytes for 2B, 2C& 2D
ADV must be inactive for ADSP Write
ADSC initiated write
ADSP is blocked by E inactive
A0–An
BA–BD
DQA–DQD
Write Deselected
Hi-Z
WR1 WR2 WR3
Write Cycle Timing
E1
E3
tS tH
tS tH
tS tH E2 and E3 only sampled with ADSP or ADSC
E1 masks ADSP
E2
Deselected with E2
Rev: 1.02a 9/2002 19/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Q1AQ3A
Q2D
Q2cQ2B
Q2A
tKQ
tLZ
tOE tOHZ
tOLZ tKQX
tHZ
tKQX
CK
ADSP
ADSC
BW
G
GW
ADV
Burst Read
RD2 RD3
tKL
tS tH
tH
tS tH
tS tH
ADSC initiated read
Suspend Burst
Single Read
ADSP is blocked by E inactive
A0–An
BA–BB
tKH tKC
tS tH
tS
tS
tH
DQA–DQD
RD1
Hi-Z
Suspend Burst
Fl
ow
Th
roug
h R
ea
d C
yc
l
e
Ti
m
i
ng
E2
tS
tH
tH
tH
E1 masks ADSP
E2 and E3 only sampled with ADSP or ADSC Deselected with E2
E3
E1
tS
tS
Rev: 1.02a 9/2002 20/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Flow Through Read-Write Cycle Timing
CK
ADSP
ADSC
ADV
GW
BW
G
RD1 RD2
Q1AQ2AQ2BQ2c Q2D
Single Read Burst Read
tOE tOHZ
tS tH
tH
tS tH
tS tH
tS tH
tS tH
tKH
ADSC initiated read
DQA–DQD
BA–BD
A0–An
tKL tKC
tS
Single Write
ADSP is blocked by E inactive
tKQ
Hi-Z Q2A
Burst wrap around to it’s initial state
E1
E3
E2
tS
tS tH
tS
E1 masks ADSP
E2 and E3 only sampled with ADSP and ADSC
Deselected with E3
tH
tH
WR1
tS
WR1
tS tH
D1A
tS tH
Rev: 1.02a 9/2002 21/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Pipelined SCD Read Cycle Timing
Q1AQ3A
Q2D
Q2c
Q2B
Q2A
tKQ
tLZ
tOE
tOHZ
tOLZ tKQX
tHZ
tKQX
CK
ADSP
ADSC
BW
G
GW
ADV
Burst Read
RD2 RD3
tKL
tS tH
tH
tS tH
tS tH
ADSC initiated read
Suspend Burst
Single Read
ADSP is blocked by E inactive
A0–An
BWA–BWD
tKH
tKC
tS tH
tS
tS
tH
DQA–DQD
RD1
Hi-Z
E2
tS
tH
tH
tH
E1 masks ADSP
E2 and E3 only sampled with ADSP or ADSC Deselected with E2
E3
E1
tS
tS
Rev: 1.02a 9/2002 22/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
CK
ADSP
ADV
GW
BW
G
Q1AD1AQ2AQ2Bb Q2c Q2D
Single Read Burst Read
tOE tOHZ
tS tH
tS tH
tH
tS tH
tS tH
tKH
DQA–DQD
BWA–BWD
tKL
tKC
tS
Single Write
ADSP is blocked by E inactive
tKQ tS tH
Hi-Z
Pipelined SCD Read-Write Cycle Timing
WR1
E1
E3
E2
tS
tS tH
tS
E1 masks ADSP
E2 and E3 only sampled with ADSP and ADSC
Deselected with E3
tH
tH
RD1 WR1 RD2
tS tH
A0–An
ADSC
tS tH ADSC initiated read
Rev: 1.02a 9/2002 23/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after ZZ recovery time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
Application Tips
Single and Dual Cycle Deselect
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally, but that are ended with the output
drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance, but their use usually assures there
will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs (like this one) do not waste
bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at
bank address boundary crossings), but greater care must be exercised to avoid excessive bus contention.
CK
ADSP
ADSC
tH tKH tKL
tKC
tS
ZZ tZZR
tZZH
tZZS
~
~
~
~~
~~
~~
~~
~
Snooze
Sleep Mode Timing Diagram
~
~
~
~
~
~
~
~
~
~
Rev: 1.02a 9/2002 24/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
TQFP Package Drawing
D1
D
E1
E
Pin 1
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1. All dimensions are in millimeters (mm).
2. Package width and length do not include mold protrusion.
Symbol Description Min. Nom. Max
A1 Standoff 0.05 0.10 0.15
A2 Body Thickness 1.35 1.40 1.45
b Lead Width 0.20 0.30 0.40
c Lead Thickness 0.09 —0.20
D Terminal Dimension 21.9 22.0 22.1
D1 Package Body 19.9 20.0 20.1
E Terminal Dimension 15.9 16.0 16.1
E1 Package Body 13.9 14.0 14.1
e Lead Pitch —0.65 —
L Foot Length 0.45 0.60 0.75
L1 Lead Length —1.00 —
Y Coplanarity 0.10
θLead Angle 0°—7°
Rev: 1.02a 9/2002 25/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
Ordering Information for GSI Synchronous Burst RAMs
Org Part Number1Type Package Speed2
(MHz/ns) TA3Status
1M x 18 GS8160E18AT-300 Pipeline/Flow Through TQFP 300/5 C
1M x 18 GS8160E18AT-275 Pipeline/Flow Through TQFP 275/5.25 C
1M x 18 GS8160E18AT-250 Pipeline/Flow Through TQFP 250/5.5 C
1M x 18 GS8160E18AT-225 Pipeline/Flow Through TQFP 225/6 C
1M x 18 GS8160E18AT-200 Pipeline/Flow Through TQFP 200/6.5 C
512K x 32 GS8160E32AT-300 Pipeline/Flow Through TQFP 300/5 C
512K x 32 GS8160E32AT-275 Pipeline/Flow Through TQFP 275/5.25 C
512K x 32 GS8160E32AT-250 Pipeline/Flow Through TQFP 250/5.5 C
512K x 32 GS8160E32AT-225 Pipeline/Flow Through TQFP 225/6 C
512K x 32 GS8160E32AT-200 Pipeline/Flow Through TQFP 200/6.5 C
512K x 36 GS8160E36AT-300 Pipeline/Flow Through TQFP 300/5 C
512K x 36 GS8160E36AT-275 Pipeline/Flow Through TQFP 275/5.25 C
512K x 36 GS8160E36AT-250 Pipeline/Flow Through TQFP 250/5.5 C
512K x 36 GS8160E36AT-225 Pipeline/Flow Through TQFP 225/6 C
512K x 36 GS8160E36AT-200 Pipeline/Flow Through TQFP 200/6.5 C
1M x 18 GS8160E18AT-300I Pipeline/Flow Through TQFP 300/5 I
1M x 18 GS8160E18AT-275I Pipeline/Flow Through TQFP 275/5.25 I
1M x 18 GS8160E18AT-250I Pipeline/Flow Through TQFP 250/5.5 I
1M x 18 GS8160E18AT-225I Pipeline/Flow Through TQFP 225/6 I
1M x 18 GS8160E18AT-200I Pipeline/Flow Through TQFP 200/6.5 I
512K x 32 GS8160E32AT-300I Pipeline/Flow Through TQFP 300/5 I
512K x 32 GS8160E32AT-275I Pipeline/Flow Through TQFP 275/5.25 I
512K x 32 GS8160E32AT-250I Pipeline/Flow Through TQFP 250/5.5 I
512K x 32 GS8160E32AT-225I Pipeline/Flow Through TQFP 225/6 I
512K x 32 GS8160E32AT-200I Pipeline/Flow Through TQFP 200/6.5 I
512K x 36 GS8160E36AT-300I Pipeline/Flow Through TQFP 300/5 I
512K x 36 GS8160E36AT-275I Pipeline/Flow Through TQFP 275/5.25 I
512K x 36 GS8160E36AT-250I Pipeline/Flow Through TQFP 250/5.5 I
512K x 36 GS8160E36AT-225I Pipeline/Flow Through TQFP 225/6 I
512K x 36 GS8160E36AT-200I Pipeline/Flow Through TQFP 200/6.5 I
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8160E18AT-200IT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow through mode-selectable by the user.
3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which
are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.02a 9/2002 26/26 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8160E18/32/36AT-300/275/250/225/200
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content Page;Revisions;Reason
8160E18A_r1 • Creation of new datasheet
8160E18A_r1;
8160E18A_r1_01 Content
• Updated FT power numbers
• Updated AC Characteristics table
• Updated ZZ recovery time diagram
• Updated AC Test Conditions table and removed Output Load
2 diagram
8160E18A_r1_01;
8160E18A_r1_02 Content
• Removed extraneous VDDQ1 table on page 13 and changed
VDDQ2 table to VDDQ
• Removed pin locations from pin description table
