ESD Diodes
1
Publication date: November 2004 SKE00021AED
MAZMxxxH Series
Silicon planar type
For surge absorption circuit
■Features
•Four elements anode-common type
•Power dissipation PD : 150 mW
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Power dissipation *PD150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Common Electrical Characteristics Ta = 25°C ± 3°C
Note) *:P
D = 150 mW achieved with a printed circuit board.
Parameter Symbol Conditions Min Typ Max Unit
Zener voltage *VZIZSpecified value V
Zener rise operating resistance RZK IZSpecified value Ω
Zener operating resistance RZIZSpecified value Ω
Reverse current IRVRSpecified value µA
1.60±0.05
0.55±0.05
1.00±0.05
0.20±0.05
0.10±0.03
54
123
1.60±0.05
1.20±0.05
1.20±0.05
1.60±0.05
5°
0 ∼ 0.01
5°
(0.15)
Refer to the list of the
electrical characteristics
within part numbers
Internally connected circuit
3
5
21
4
Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage is ±10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
VZ guaranted 20 ms after current flow.
1 : Cathode 1 4 : Cathode 3
2 : Anode 1, 2, 3, 4 5 : Cathode 4
3 : Cathode 2
SSMini5-F1 Package
MAZMxxxH Series
SKE00021AED
2
MAZM062H 5.8 6.2 6.6 5 0.2 4 50 100 6.2Z
MAZM068H 6.4 6.8 7.2 5 0.1 4 30 60 6.8Z
MAZM082H 7.7 8.2 8.7 5 0.1 5 30 60 8.2Z
MAZM100H 9.4 10.0 10.6 5 0.05 7 30 60 10Z
MAZM120H 11.4 12.0 12.7 5 0.05 9 30 80 12Z
■Electrical characteristics within part numbers Ta = 25°C ± 3°C
VZ (V) IR (µA) RZ (Ω)R
ZK (Ω)
IZVR
I
Z
= 5 mA I
Z
= 0.5 mA
Min Nom Max (mA) Max (V) Max Max
Part number Marking symbol
Zener voltage
Zener
operating
resistance
Reverse current
(DC)
PD TaIZ VZIF VF
RZ IZSZ IZCt VR
10
−3
468101214
10
−2
10
−1
1
10
10
2
Zener voltage VZ (V)
Zener current IZ (mA)
T
a
= 25°C
MAZM120H
MAZM100H
MAZM082H
MAZM068H
MAZM062H
0
0 25020015010050
50
100
150
200
250
Ambient temperature T
a
(°C)
Power dissipation P
D
(mW)
Cu foil
t = 0.035 mm
10 mm
0.8 mm
10 mm
10
−2
0 0.4 0.8 1.2
10
−1
1
10
10
2
Forward voltage VF (V)
Forward current IF (mA)
T
a
= 25°C
10−1
1
10
102
Zener operating resistance RZ (Ω)
11010
2
Zener current IZ (mA)
Ta = 25°C
MAZM082H
MAZM100H
MAZM068H
MAZM120H
MAZM062H
0
12
10
8
6
4
2
0 102030405060
Zener current I
Z
(mA)
Temperature coefficient of zener voltage
S
Z
(mV / °C)
Ta = 25°C to 150°C
MAZM082H
MAZM068H
MAZM062H
MAZM100H
MAZM120H
0
10
0
20
4812
30
Terminal capacitance Ct (pF)
Reverse voltage VR (V)
Ta = 25°C
MAZM068H
MAZM062H
MAZM082H
MAZM100H
MAZM120H
Zener rise
operating
resistance
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
