PMG370XN
N-channel µTrenchMOS™ extremely low level FET
Rev. 01 — 13 February 2004 Product data
MBD128
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
Surface mounted package Footprint 40% smaller than SOT23
Low on-state resistance Low threshold voltage.
Driver circuits Switching in portable appliances.
VDS 30 V ID0.96 A
Ptot 0.69 W RDSon 440 m.
Table 1: Pinning - SOT363 (SC-88), simplified outline and symbol
Pin Description Simplified outline Symbol
1 drain (d)
SOT363 (SC-88)
2 drain (d)
3 gate (g)
4 source (s)
5 drain (d)
6 drain (d)
MSA370
123
654
Top view
s
d
g
MBB076
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
Product data Rev. 01 — 13 February 2004 2 of 12
9397 750 12822 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3. Ordering information
4. Limiting values
Table 2: Ordering information
Type number Package
Name Description Version
PMG370XN SC-88 Plastic surface mounted package; 6 leads SOT363
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 °CTj150 °C - 30 V
VDGR drain-gate voltage (DC) 25 °CTj150 °C; RGS =20k-30V
VGS gate-source voltage (DC) - ±12 V
IDdrain current (DC) Tsp =25°C; VGS = 4.5 V; Figure 2 and 3- 0.96 A
Tsp = 100 °C; VGS = 4.5 V; Figure 2 - 0.61 A
IDM peak drain current Tsp =25°C; pulsed; tp10 µs; Figure 3 - 1.92 A
Ptot total power dissipation Tsp =25°C; Figure 1 - 0.69 W
Tstg storage temperature 55 +150 °C
Tjjunction temperature 55 +150 °C
Source-drain diode
ISsource (diode forward) current (DC) Tsp =25°C - 0.57 A
ISM peak source (diode forward) current Tsp =25°C; pulsed; tp10 µs - 1.15 A
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
Product data Rev. 01 — 13 February 2004 3 of 12
9397 750 12822 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Fig 1. Normalized total power dissipation as a
function of solder point temperature. Fig 2. Normalized continuous drain current as a
function of solder point temperature.
Tsp =25°C; IDM is single pulse; VGS = 4.5 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
120
0 50 100 150 200
(%)
Tsp (°C)
Pder
03aa25
0
40
80
120
0 50 100 150 200
Tsp (°C)
Ider
(%)
Pder Ptot
Ptot 25 C
°
()
----------------------- 100%×=Ider ID
ID25C
°
()
------------------- 100%×=
03ap84
10-2
10-1
1
10
10-1 1 10 102
VDS (V)
ID
(A)
DC
10 ms
Limit RDSon = VDS / ID
1 ms
tp = 10 µs
100 ms
100 µs
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
Product data Rev. 01 — 13 February 2004 4 of 12
9397 750 12822 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5. Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from junction to solder point Figure 4 - - 180 K/W
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
03ap83
1
10
102
103
10-4 10-3 10-2 10-1 1 10
tp (s)
Zth(j-sp)
(K/W)
single pulse
δ = 0.5
0.2
0.1
0.05
0.02
tp
tp
T
P
t
T
δ =
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
Product data Rev. 01 — 13 February 2004 5 of 12
9397 750 12822 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage ID=1µA; VGS =0V
Tj=25°C 30--V
Tj=55 °C 27--V
VGS(th) gate-source threshold voltage ID= 0.25 mA; VDS =V
GS;Figure 9
Tj=25°C 0.5 1 1.5 V
Tj= 150 °C 0.35 - - V
Tj=55 °C - - 1.8 V
IDSS drain-source leakage current VDS =30V; V
GS =0V
Tj=25°C --1µA
Tj= 150 °C - - 100 µA
IGSS gate-source leakage current VGS =±12 V; VDS = 0 V - 10 100 nA
RDSon drain-source on-state resistance VGS = 4.5 V; ID= 0.2 A; Figure 7 and 8
Tj=25°C - 370 440 m
Tj= 150 °C - 629 748 m
VGS = 2.5 V; ID= 0.1 A; Figure 7 and 8- 550 650 m
Dynamic characteristics
Qg(tot) total gate charge ID= 1 A; VDD =15V; V
GS = 4.5 V;
Figure 13 - 0.65 - nC
Qgs gate-source charge - 0.14 - nC
Qgd gate-drain (Miller) charge - 0.18 - nC
Ciss input capacitance VGS =0V; V
DS = 25 V; f = 1 MHz;
Figure 11 -37-pF
Coss output capacitance - 8.5 - pF
Crss reverse transfer capacitance - 5.5 - pF
td(on) turn-on delay time VDD =15V; R
L=15;
VGS = 4.5 V; RG=6- 6.5 - ns
trrise time - 9.5 - ns
td(off) turn-off delay time - 14 - ns
tffall time - 5.5 - ns
Source-drain diode
VSD source-drain (diode forward) voltage IS= 0.3 A; VGS =0V;Figure 12 - 0.78 1.2 V
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
Product data Rev. 01 — 13 February 2004 6 of 12
9397 750 12822 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Tj=25°CT
j=25°C and 150 °C; VDS >IDxR
DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values. Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ao00
0
0.5
1
1.5
2
2.5
0 0.5 1 1.5 2
VDS (V)
ID
(A)
4.5 V
3 V
2.5 V
2 V
VGS = 1. 8 V
3.5 V
03ao02
0
0.5
1
1.5
2
2.5
012345
VGS (V)
ID
(A) VDS > ID x RDSon
Tj = 150 °C
25 °C
03ao01
0
0.2
0.4
0.6
0.8
1
00.511.522.5
ID (A)
RDSon
()
4.5 V
3 V
3.5 V
VGS = 2. 5 V
03al00
0
0.6
1.2
1.8
-60 0 60 120 180
Tj (°C)
a
aRDSon
RDSon 25 C
°
()
-----------------------------
=
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
Product data Rev. 01 — 13 February 2004 7 of 12
9397 750 12822 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
ID= 0.25 mA; VDS =V
GS Tj=25°C; VDS =5V
Fig 9. Gate-source threshold voltage as a function of
junction temperature. Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03al82
0
0.5
1
1.5
2
-60 0 60 120 180
Tj (°C)
VGS(th)
(V)
min
max
typ
03an65
10-6
10-5
10-4
10-3
0 0.4 0.8 1.2 1.6
VGS (V)
ID
(A)
min maxtyp
03ao04
1
10
102
10-1 1 10 102
VDS (V)
C
(pF) Ciss
Coss
Crss
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
Product data Rev. 01 — 13 February 2004 8 of 12
9397 750 12822 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Tj=25°C and 150 °C; VGS =0V I
D= 1 A; VDD =15V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ao03
0
0.2
0.4
0.6
0.8
1
0 0.2 0.4 0.6 0.8 1
VSD (V)
IS
(A)
Tj = 25 °C
150 °C
VGS = 0 V
03ao05
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8
QG (nC)
VGS
(V) ID = 1 A
Tj = 25 °C
VDD = 15 V
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
Product data Rev. 01 — 13 February 2004 9 of 12
9397 750 12822 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
7. Package outline
Fig 14. SOT363 (SC-88).
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
wBM
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT363
UNIT A1
max bpcDEe1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
Product data Rev. 01 — 13 February 2004 10 of 12
9397 750 12822 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
8. Revision history
Table 6: Revision history
Rev Date CPCN Description
01 20040213 - Product data (9397 750 12822).
9397 750 12822
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data Rev. 01 — 13 February 2004 11 of 12
9397 750 12822
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data Rev. 01 — 13 February 2004 11 of 12
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.Fax: +31 40 27 24825
9. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
12. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Level Data sheet status[1] Product status[2][3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2004.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 13 February 2004 Document order number: 9397 750 12822
Contents
Philips Semiconductors PMG370XN
N-channel µTrenchMOS™ extremely low level FET
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
5.1 Transient thermal impedance . . . . . . . . . . . . . . 4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11