MMS9018
Features
• SOT-23 Plastic-Encapsulate Transistors
• Capable of 0.2Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 0.05A
• Collector-base Voltage 25V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking Code: J8
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 25 --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0) 18 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0) 4.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=20Vdc, IE=0) --- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=15Vdc, IB=0) --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=3.0Vdc, IC=0) --- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=1.0mAdc, VCE=5.0Vdc) 70 190 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc) --- 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=100mAdc, IB=1.0mAdc) --- 1.4 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=5.0mAdc, VCE=5.0Vdc, f=400MHz) 600 --- MHz
NPN Silicon
Plastic-Encapsulate
Transistor
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
A
B
C
D
E
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
F
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Revision: 2 2003/04/30
omponents
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