MMBF170
W
N-CHANNEL ENHAN CEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
Mechanical Data
Case: SOT-323
Case Material - Molded Plastic. UL Flammability Rating
Classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish). Please
see Ordering Information, Note 4, on Page 2
Terminal Connections: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
ADVANCE INFORMATION
Source
Gate
Drain
SOT-323
D
GS
TOP VIEW
TOP VIEW
E
q
uivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS 1.0MΩ V
DGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 1) Continuous
Pulsed ID500
800 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 1) Pd200
1.6 mW
mW/°C
Thermal Resistance, Junction to Ambient RθJA 625 K/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current IDSS 1.0 µA
VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ±10 nA VGS = ±15V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) 0.8 2.1 3.0 V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance RDS (ON) 5.0 Ω V
GS = 10V, ID = 200mA
Forward Transconductance gFS 80 mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 22 40 pF
Output Capacitance Coss 11 30 pF
Reverse Transfer Capacitance Crss 2.0 5.0 pF
VDS = 10V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 10 ns
Turn-Off Delay Time tD(OFF) 10 ns
VDD = 25V, ID = 0.5A,
VGS = 10V, RGEN = 50Ω
Notes: 1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
MMBF170W
Document number: DS30493 Rev. 2 - 0 1 of 3
www.diodes.com November 2007
© Diodes Incorporated
MMBF170
W
MMBF170W
Document number: DS30493 Rev. 2 - 0 2 of 3
www.diodes.com November 2007
© Diodes Incorporated
ADVANCE INFORMATION
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOL TAGE (V)
Fig. 1 On-Region Characteristics
DS
V = 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
GS
5.5V
10V
2.1V
5.0V
I, D
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(A)
D
0
1
2
3
4
5
00.2
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
D
V = 5.0V
GS
T = 25C
j
°
V = 10V
GS
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R
,
N
O
R
MALIZED
DRAI N-SOURCE ON-RESISTANCE
DS(ON)
T, JUNCTION TEMPERATURE ( C)
Fig . 3 On- R esistance vs. Junction Temp er atu r e
j
°
V = 10V, I = 0.5A
GS D
V = 5.0V, I = 0.05A
GS D
0
V , GATE TO SOURCE VOLT AGE (V)
Fig . 4 On- R esistance vs. Ga te - Source Voltag e
GS
I= 50mA
D
I = 500mA
D
1
2
3
4
5
6
0 2 4 6 81012141618
R , NORMALI ZED
DRAI N-SOURCE ON-RESISTANCE
DS(ON)
Ordering Information (Notes 3 and 4)
Part Number Case Packaging
MMBF170W-7 SOT-323 3000/Tape & Reel
Notes: 3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For lead free version (with lead free terminal finish) part number, please add "-F" suffix to part number above. Example: MMBF170W-7-F.
Marking Information
K6Z
YM
K6Z = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012
Code T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
MMBF170
W
Package Outline Dimensions
MMBF170W
Document number: DS30493 Rev. 2 - 0 3 of 3
www.diodes.com November 2007
© Diodes Incorporated
ADVANCE INFORMATION
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
A
M
JL
DF
BC
H
K
G
TOP VIEW
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α 0° 8°
All Dimensions in mm
X E
G
Y
C
Z
Dimensions Value (in mm)
Z 2.8
G 1.0
X 0.7
Y 0.9
C 1.9
E 0.65