MBR1030CT thru MBR1045CT
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=105 C
IFSM
Maximum Ratings
10
125
A
A
Unit
o
IRMaximum DC Reverse Current
At Rated DC Blocking Voltage @TJ=25 C
@TJ=125 C
CJTypical Junction Capacitance Per Element (Note 3)
TJOperating Temperature Range
0.1
15
3.0
170
-55 to +150
-55 to +175
mA
pF
o
o
Typical Thermal Resistance (Note 2)ROJC C/W
o
C
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
MBR1030CT
MBR1035CT
MBR1040CT
MBR1045CT
VRRM
V
30
35
40
45
VRMS
V
21
24.5
28
31.5
VDC
V
30
35
40
45
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR) 10000 V/us
C
o
TSTG Storage Temperature Range
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
Maximum Forward
Voltage (Note 1)
IF=5A @TJ=25 C
IF=5A @TJ=125 C
IF=10A @TJ=125 C
VF0.57
0.70
0.84 V
o
o
o
A=Anode, C=Cathode, TAB=Cathode
A
A
C
C(TAB)
A C A Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-220AB