MOSFETs D FIELD-EFFECT TRANSISTORS (continued) Single Gate P-CHANNEL G Enhancement S$ MOSFETs i MOSFETs are available in either depletion/enhancement or enhancement mode N . : : . : CHANNEL (in general, depletion/enhancement devices are operated in the depletion mode and Depletion are referred to as depletion devices). They are available in both N- and P-channel, G and both single gate and duai gate construction. Some MOSFETs are also offered with input diode protection which reduces the chance of damage from static charge in handling. TABLE 2. Low-Frequency/Low-Noise (continued) N-CHANNEL G Enhancement P-Channel MOSFETs S Rel Y tsi Ciss | rss | ViBR)DDS Va@s(TH) Ipss (V) (mA) Package (mmho) | (:mho) (pF) (pF) (Vv) TO Device MIN MAX (MAX) MAX MIN MIN MAX MIN MAX 72 3N155A 1.0 60 5.0 1.3 35 15 | 32 0.25 18 MFE823 1.0 _ 6.0 1.5 50 30 | 50 _ 0.25 72 MFE3003 _ 5.0 1.0 15 ~ 4,0 10 N-Channel MOSFETs 18 2N3796 0.4 1.8 7.0 0.8 25 _ 7.0 2.0 6.0 18 MFE825 0.5 _ 4.0 0.7 20 _ _ 1.0 25 72 2N4351 1.0 - 5.0 1.3 25 1.0 5.0 10 72 3N169 1.0 5.0 1.3 25 0.5 1.5 10 _| 72 3N170 1.0 _ 5.0 1.3 25 1.0 2.0 _ 10 72 3N171 1.0 _ 5.0 1.3 25 15 3.0 - 10 72 MFE3002 _- _ 5.0 1.0 15 _ 3.0 _ 10 18 2N3797 1.5 _ 8.0 0.8 25 _ 7.0 2.0 _ 6.0 TABLE 3. N-Channel JFETs V(BR)DSS Rel Yts) Rel Yos! Ciss | Crss NF VipryGDo | Vasoott) Ipss @ @ @ (Vv) (mA) Package (mmbho) f (umho) t (pF) | (pF) | (dB) | RG = 1K (Vv) TO-~ Device MIN (MHz) | MAX | (MHz) | (MAX) | MAX | MAX | f (MHz) MIN MIN | MAX {| MIN | MAX 92 2N5484 2.5 100 75 100 5.0 1.0 3.0 100 25 0.3 3.0 1.0 5.0 92 2N5485 3.0 400 100 400 5.0 1.0 4.0 400 25 1.0 4.0 4.0 10 92 J305 3.0! 400 sot 100 | 3.0' | ost | 4ot 400 30 05 | 30 | 1.0 | 80 72 2N3823 3.2 200 200 200 6.0 2.0 2.5 100 30 - 8.0 4.0 20 92 2N5486 3.5 400 100 400 5.0 1.0 4.0 400 25 2.0 6.0 8.0 20 72 2N4416 4.0 400 100 | 400 | 40 | 08 | 40 400 30 20 | 60 | 50 | 15_ 72 2N4416A 4.0 400 100 | 400 | 40 | 08 | 40 400 _ 30 20 | 60 | 5.0 | 15 92 2N5245 4.0 400 100 | 400} 45 | 1.0 | 40 { 400 | 30 | 10 | 60 | 5.0 | 15. 92 J304 4.2! 400 sot too | 3.ot | ost | aot | 400 30. | 20 | 60 | 50 | 15_ 52 | _U310 10 | 0.001 | 150 too {| 5.0 | 25 | 3f | 450 2. (| 25 | 60 | 24 | 60 | 92 J308 tat 100 | 2508 | 100 | 75 | 25 | 1.5! too | 2 of 10 | 65 | 12 (| 60 | 3 92 J309 12t 100 | 2650! | 100 | 75 | 25 | 1.5! 100 25 1.0 | 40 | 12 | 30 | | 92 | 9310 vat_ | 100 | ast | 100 | 75 | 25 | 15f | 100 | 25 | 20 1 65 | 24 | 60. 72 3N128* 5.0 | 0.001 | 500 | 200 | 70 {028 | 50 200 {| 50 |05|80 | 50 { 25 t = typical N-Channel MOSFET MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-59