Feat ures tier 1 Small-signal MOSFETs low noise figure *Large |Yfs| *Low gate leak current sized package permitting FET-used sets to be made smaller LF Amp, Low Noise, Analog Switch Impedance Conversion Appl ications SANYO Case Out! ines (uni t :mm) SANYO: CP4 ac18d, SATE SQREET: FaRBAS yA 8S hero gs, Absolute Maxipum Electrical Characteristics/Ta=25C " Drain, 2 Back Gate, 4B Gate, 4: Source, type N Pack Ratings/Ta=25C 35K2 0.6 ype No, ackage . , . ps 1p Po | Me! Ciss | rss FV Ro s(on) Pu 1-4 Tr ( ):Marking typ typ typ GS typ et ii (V) | oA) | GoW] GS) | CPF) | (PF) |) | (2) + [4a ont 29K1839CJ J) MCP 30} __...100] 150) 50} 12 | 0.4 J 10] 1S | Aaty ret cP 50 100} 200 40 15 0.5 10 20 Ch 2 = 25K1840))] | 30] 100] 200) 50. | 12 | Oa tO | a8 ra. foal [8 SSK248(NJ) | CP4 | 10} 100] 200] 80 | 50 | 9. oe " 2SK669 SPA 50 100} 200 40 15 0.5 10 20 Tt 25K184) 30,100) 200] 50. | 12 |. 0.4 040 10]. 15] C4 25K583 NP 50 200} 600 40 15 0.5 10 20 / ' NY Gate, 2:Drain, 3:Sourc & HF Amp Applications 187. J190, J193, J387, 1268.0 289, KRIST, K1467 . K2167, K2168 Absolute Maximum Electrical Characteristics/Ta=25C Hag7p K1473, K1724, K1726, K1728, Ratings/Ta=25C 1:Source, 2:Gate, 3:Drain, Type No. | Package v i P To C t i K2171, K2218 ; DS ) D {fs iss rss | V DSS 3 28 ( ):Marking typ typ typ DS +1DSX (V) (oA) | (mW)} (mS) (PF) (PF) (Vv) (mA) 7 Beh oer ME MCP 16 30] 150 ll 2.3) Q.035 10 12~ 12 Ze 25k2268 WI) BT: 30}150) dd | 2.71 0.015) 6 | 1.2 ~ 12 SeRoseschy cP 20 301! 200 1 2.4) 0.035 10 1.2~ 12 25k2269 WJ) 1S} os 30} 200) dl | 2.7] 0.015) 6 | 1.2 ~ 12 thy | ee Sa ee Jam ee nd ad ee ee ep ewe ee Je ee] ee LLL 4 ~ w--- > Ly LL 38K180(D. 15 30| 200 20 3 0. 02 10 2.5 ~ 24 3SK181(E 15 30} 200 18 3 0. 02 10 |%2.5 ~ 24 3SK251(P 15 30} 200 18 5 0. 02 10 |#2.5 ~ 24]SANYO:TP . : 38K263(R CP4 15 30; 200 14 2.7} 0.015 8 |*2.5 ~ 24]1:Gate, 2:Drain, 3:Source, 4:Drain 3SK264(S 15 30] 200 17 2.5] 0.015 6 5 ~ 24 x of 35K265(T 15 30} 200 22 4 0.015 6 5 ~ 24 4 ~ 3SK266(U 13.5 30} 200 20 1.7} 0.015 10 |%2.5 ~ 24 1 KE ln f High-voltage SH, High-sp peed SW. x -peaosy [ FI PD=1, 5WCPCP: Package): Mounte on ceramic boa nai pSone X0. 8mm). For P Channel (-) sign is omitted. oe aps Absolute Maxi gum Electrical Characteristics/Ta=25C Type No, Package Ratings/Ta25 t Ci C y R rV=10V = LE 4E ():Marking Yoss | 'b | Pp | lyfst | Ciss | Crss | Veccoeey] Bygcony?%os ib c t t t 10V, 1mA SANYO: NMP P channel N channel (V) (A) CW) (s) (PF) (PR) ain(V)max| typ (Q) max |}:Source, 2:Drain, i 2$J284( AM) 2SK1847(K 30 = |0.3/0. 0.25 |0.35/0. 1 50 10 }1 2| 1.5/0.5 | 2.2/0. 75|3:Gate. res) 28) 285( BM) ,2SK 1848 (1 CP 60 0.25/0.4) 0.25 |0.35/0.6 45 5 ] 2| 2.2/0.9 | 3.0/1.2 6.9 Ttis0 28)286(CM) 2SK1849(MJ){ 100 0415/0, 25] 0.25 10.27/0.$ 45 | $l 2] 5.5/2.7 | 7.5/3.5 | - /,28K1311(KB 60 -/2 -/1L.7| 7/16 -/12 10.8 2.5 -/0.35 -/0. 45 + 28J187 JA) 2SK1467 (KC 30 1/2 1/2 170 20/30 |1 2} 0.5/0.2 |0.75/0,3 | 2 28]190(3B).2SK1470(KD 60 1/2 1/2 1160/1500) 10/12 |1 2} 0.9/0.35] 1.2/0. 45/* 283193010), 2SK1473(KE 100 1/2 1/2 160/150 6 1 2) 1.8/0.7 | 2.4/0.95 28] 287 (1D), 42SK1724 (KF PCP 30 |0.5/1 3.5 [0.4/1 50 10 =f] 2} 1.5/0.5 | 2.2/0.75 A) 0.6 o 28] 288( JE) 2SK1726 (KG 60 0.5/1 0.4/1 45 5 2} 2.2/0.9 | 3.0/1.2 ; Tn 5 28J289() F) 2SK1728( KH 100 +|0.5/1 0.4/1 45 3 2| 5.5/2.7 | 7.5/3.5 - /2SK2167 (KK 250 -/0.4 -/0.4 37 4 .5 2.5 -/8 -/il2 po? 3 04s - /,25K2168(KL 250 -/0.8 -/0.9 80 8 -5 2.5 -/3.5 -/5 poe Te Z2SK2260(KO)} WO fort 2] Aled 80 | Bes jL5 2.5) 16 | 7/2. 2 | 253188 2SK1468 30 2/4 * 20 2/4 400 10730 {i 2| 0.2/85m | 0.3/0.12 (fan t+) 254189,2SK1469 30 4/8 %K 30 4/8 1000 |220/180)1 2) 85m/40n0_|0. 12/55m 28]191/428K1471 60 2/4 %*K 20 2/4 380 40/30 }1 210. 35/0, 15/0. 45/0. 2 se 254 28)192,28K1472 60 4/8 * 30 4/8 950 75/50 2/0, 15/60m | 0. 2/80m 254194,28K1474 100 2/4 20 2/4 380 20/15 2| 0.7/0.3 |0.95/0. 4 28)195,/28K1475 100 4/8 %K 30 4/8 950 40/30 2| 0.3/0.12] 0.4/0. 16 28) 281 2SK1920 TP 250 3/4 %30 (2.5/4 420 40/30 11.5 2.5] 1.5/0.5 2/0.7 28)3627% - 60 2/- * 20 2/- 240 40/- -5 2.5) 0.3/- 0. 4/+ SANYO: FLP . 28) 4537 _ 250 3/- 30 |2.5/- 420 40/- .5 2.5 {- 2.6/- 1:Source, 2:Drain, - 2SK2046 30 -/12 * 30 -/8 1000 ~/180/1 2 -/350 ~/50m |3:Gate. - /25K2199 250 -/0.8 #15 -/0.9 80 -/8 .5 2.5 -/3.5 -/5 be 10.5 - 7, 25K2406 450 ~/i 3K 30 -/0.8] 300 -/8 2 3 -/3.5 -/4.5 12 eoennne nn LZ 25K2530 250 | on /2 M20 | 2/2 | 160 | -/15 [15 2.5) 971.5 | fe 28)225,428K1725 30 1 1 1 170/50 | 20/10 2 0.5 0.75 +44 28] 2284 28K1727 60 0.8 1 0.9 |160745 | 10/5 2 0.9 12 | ry 28)231/28K1729 100 0.5 ] 0.7 1160/45 6/3 2| 1.8/2.7 | 2.4/3.5 | _28K1730 NMP 30 -/1.8 } ~/2 -/170| -/30 2} -/0.2 -/0.3_| + f ba - /.28K1733 60 -/1.5 1 -/1,.8] -/150] -/12 2 -/0.35 -/0. 45 I "4 los (28K1736 100 ~/l 1] -/1.5] =-/150] -/6 2) -/0.7 -/0,95| os | | eweenee ewe 2SK2169 290 | 7/0. 4) 1] 70,8] -/80 | 9/8 11.5 2.5) /38.5 | 5 | Ut 251226 /725K1731 30 2/3 1.5 |. 2/3.5] 400 110/90 11 2] 0.2/0.1 "0.370. 14 7? 28] 227 4 2SK1732 30 3/4.5 1.5 |3.5/6.5] 1000 |220/180 2) 95m/50n_ | 130m/65m . 28] 229728K1734 FLP 60 |1.6/2.5 1.5 11.8/3.5] 380 40/30 210. 35/0. 17|0, 45/0, 22 oe EO 3 lets) Ee ieea) Bt | BR saga ae) UA 25)233// 25K1738 100_|1.8/3" 1.5 |2.8/5.0| 950 _| 40/30 2] 0.30.13] 0.4/0.17] 74 s In addition to the above we have power MOSFETs see the quick guides. Precaution: Take care to Prevent device breakage from static electricity because MOS FETs cannot withstand much static electricity These specifications are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters, TR Division. 50 Next page. MT952120TR