PD-96144A IRF7750GPbF HEXFET(R) Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( < 1.1mm) Available in Tape & Reel Lead-Free Halogen-Free VDSS = -20V RDS(on) = 0.030 Description HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. ' 6 6 * ' 6 6 * TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -20 4.7 3.8 38 1.0 0.64 0.008 12 -55 to + 150 V W/C V C Max. Units 125 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 05/14/09 IRF7750GPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 --- --- -0.45 11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A 0.012 --- V/C Reference to 25C, ID = -1mA --- 0.030 VGS = -4.5V, ID = -4.7A --- 0.055 VGS = -2.5V, ID = -3.8A --- -1.2 V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -4.7A --- -1.0 VDS = -20V, VGS = 0V A --- -25 VDS = -16V, VGS = 0V, TJ = 70C --- -100 VGS = -12V nA --- 100 VGS = 12V 26 39 ID = -4.7A 3.9 5.8 nC VDS = -16V 8.0 12 VGS = -5.0V 15 --- VDD = -10V 54 --- ID = -1.0A ns 180 --- RD = 10 210 --- RG = 24 1700 --- VGS = 0V 380 --- pF VDS = -15V 270 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -1.0 -38 --- --- --- --- 26 16 -1.2 39 24 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.0A, VGS = 0V TJ = 25C, IF = -1.0A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7750GPbF 1000 1000 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 100 10 -1.50V 1 10 -1.50V 1 20s PULSE WIDTH TJ = 25 C 0.1 0.1 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP TOP 1 10 100 -VDS , Drain-to-Source Voltage (V) 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 -ISD , Reverse Drain Current (A) 100 -I D , Drain-to-Source Current (A) 20s PULSE WIDTH TJ = 150 C 0.1 0.1 TJ = 25 C TJ = 150 C 10 V DS = -15V 20s PULSE WIDTH 1 1.5 2.0 2.5 3.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 TJ = 150 C 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 -VSD ,Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF7750GPbF 2500 -VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) 10 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 1500 1000 500 0 Coss Crss 1 10 VDS =-16V 8 6 4 2 0 100 ID = -4.7A 0 10 20 30 40 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1.00 1000 0.80 100 -IID , Drain Current (A) -V GS(th) , Variace ( V ) OPERATION IN THIS AREA LIMITED BY RDS(on) ID = -250A 0.60 0.40 100us 10 1ms 10ms 1 TA = 25 C TJ = 150 C Single Pulse 0.20 -75 -50 -25 0 25 50 75 100 125 T J , Temperature ( C ) Fig 7. Threshold Voltage Vs. Temperature 4 10us 150 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com 5.0 20 4.0 16 3.0 12 Power (W) -ID , Drain Current (A) IRF7750GPbF 2.0 1.0 0.0 8 4 25 50 75 100 125 TC , Case Temperature ( C) 150 0 0.01 0.10 1.00 10.00 100.00 Time (sec) Fig 10. Typical Power Vs. Time Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 t1 1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = -4.7A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 RDS (on) , Drain-to-Source On Resistance () IRF7750GPbF 0.08 0.06 0.02 VGS = -4.5V 0.00 80 100 120 140 160 0 TJ , Junction Temperature ( C) 10 20 30 40 -I D , Drain Current (A) Fig 12. Normalized On-Resistance Vs. Temperature RDS(on) , Drain-to -Source On Resistance () VGS = -2.5V 0.04 Fig 13. Typical On-Resistance Vs. Drain Current 0.08 0.06 0.04 ID = -4.7A 0.02 0.00 2.0 2.5 3.0 3.5 -V GS, Gate -to -Source Voltage (V) Fig 14. Typical On-Resistance Vs. Gate Voltage 6 www.irf.com IRF7750GPbF TSSOP8 Package Outline Dimensions are shown in milimeters (inches) ' GGG & $ % %27+6,'(6 ; ( ,1'(; 0$5. H % ; 0,//,0(7(56 0,1 120 0$; %6& %6& %6& ' ( ( H ( ( 02$$',0(16,216 6 < 0 % 2 / $ $ $ E F / / DDD EEE FFF GGG FFF H $ ,1&+(6 120 0$; %6& %6& 0,1 + $ ;E & EEE $ ;F & $ % / DDD & 685) /($'$66,*10(176 ' 6 6 * 6,1*/( ',( ' 6 6 ' ' 6 6 * '8$/ ',( ' 6 6 * ;/ 127(6 ',0(16,21,1*$1'72/(5$1&,1*3(5$60(<0 ',0(16,216$5(6+2:1,10,//,0(7(56$1',1&+(6 &21752//,1*',0(16,210,//,0(7(5 '$7803/$1(+,6/2&$7('$66+2:1 '$780$$1'%72%('(7(50,1('$7'$7803/$1(+ ',0(16,216'$1'($5(0($685('$7'$7803/$1(+ ',0(16,21/,67+(/($'/(1*7+)2562/'(5,1*72$68%675$7( 287/,1(&21)250672-('(&287/,1(0$$ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF7750GPbF TSSOP8 Part Marking Information (;$03/( 7+,6,6$1,5)3%) 3$57180%(5 '$7(&2'(<:: $66(0%/<6,7(&2'( /27&2'( 3 /HDG)UHHLQGLFDWRU TSSOP-8 Tape and Reel Information PP PP )(('',5(&7,21 PP 127(6 7$3( 5((/287/,1(&21)250672(,$ (,$ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/2009 8 www.irf.com