HEXFET® Power MOSFET
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Interna-
tional Rectifier is well known for, provides the designer
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
IRF7750GPbF
Description
lUltra Low On-Resistance
lDual P-Channel MOSFET
lVery Small SOIC Package
lLow Profile ( < 1.1mm)
lAvailable in Tape & Reel
lLead-Free
lHalogen-Free
Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±4.7
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V ±3.8 A
IDM Pulsed Drain Current ±38
PD @TA = 25°C Power Dissipation 1.0
PD @TA = 70°C Power Dissipation 0.64
Linear Derating Factor 0.008 W/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Parameter Max. Units
RθJA Maximum Junction-to-Ambient125 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com 1
05/14/09
TSSOP-8
*
6
6
'
*
6
6
'
VDSS = -20V
RDS(on) = 0.030Ω
PD-96144A
IRF7750GPbF
2www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V
trr Reverse Recovery Time ––– 26 39 ns TJ = 25°C, IF = -1.0A
Qrr Reverse RecoveryCharge ––– 16 24 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
-38
-1.0
A
When mounted on 1 inch square copper board, t<10 sec
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.012 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.030 VGS = -4.5V, ID = -4.7A
––– 0.055 VGS = -2.5V, ID = -3.8A
VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 11 ––– ––– S VDS = -10V, ID = -4.7A
––– ––– -1.0 VDS = -20V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge ––– 26 39 ID = -4.7A
Qgs Gate-to-Source Charge ––– 3.9 5.8 nC VDS = -16V
Qgd Gate-to-Drain ("Miller") Charge ––– 8.0 12 VGS = -5.0V
td(on) Turn-On Delay Time ––– 15 ––– VDD = -10V
trRise Time ––– 54 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 180 ––– RD = 10Ω
tfFall Time ––– 210 ––– RG = 24Ω
Ciss Input Capacitance ––– 1700 ––– VGS = 0V
Coss Output Capacitance ––– 380 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
S
D
G
IRF7750GPbF
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Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
1
10
100
1.5 2.0 2.5 3.0
V = -15V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
IRF7750GPbF
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Threshold Voltage Vs. Temperature
1 10 100
0
500
1000
1500
2000
2500
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Crss
Coss
Ciss
010 20 30 40
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-4.7A
V =-16V
DS
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.20
0.40
0.60
0.80
1.00
-VGS(th) , Variace ( V )
ID = -250µA
0.1
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRF7750GPbF
www.irf.com 5
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Typical Power Vs. Time
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
0.01 0.10 1.00 10.00 100.00
Time (sec)
0
4
8
12
16
20
Power (W)
IRF7750GPbF
6www.irf.com
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 14. Typical On-Resistance Vs. Gate
Voltage
Fig 12. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-4.7A
0 10203040
-ID , Drain Current (A)
0.00
0.02
0.04
0.06
0.08
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = -2.5V
VGS = -4.5V
2.0 2.5 3.0 3.5
-VGS, Gate -to -Source Voltage (V)
0.00
0.02
0.04
0.06
0.08
RDS(on), Drain-to -Source On Resistance (Ω)
ID = -4.7A
IRF7750GPbF
www.irf.com 7
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
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IRF7750GPbF
8www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/2009
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TSSOP8 Part Marking Information
TSSOP-8 Tape and Reel Information
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