3875081 GE SOLID STATE OL DE (3875081 co1aras b B t-39-11 Standard Power MOSFETs 2N6757, 2N6758 File Number 1587 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors BA and 9A, 150V - 200V Ips(On) = 0.4N and 0.69 Features: @ SOA is power-dissipation limited Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance = Majority carrier device The 2N6757 and 2N6758 are n-channel enhancement- mode silicon-gate power field-effect transistofs designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and tow gate-drive power. These types can be oper- ated directly from integrated circuits. These types are supplied in the JEDEG TO-204AA steel package, Absolute Maximum Ratings Orain + Source = 20K) Gate - Source Valtege Storage Temparature Range 0 8 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN SOURCE (FLANGE ) GaTE 92C- 37801 JEDEC TO-204AA +55" to BSO 1n, 3313875081 G E SOLID STATE O1 ve Bsa7s081 0018385 4 Standard Power MOSFETs 2N6757, 2N6758 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) BVog5 Drain - Source 2N6758 Gate ALL Voltage ALL v Stave Orsin Source On State 2NGIS? OSfonl Valtage : 2N6758 R, Static Oran Source OnState OStonl Rediuence G) 2N6757 Source oO a Rosfond Static 2N675? Reustance fot) Thermal Resistance 2N6757 150 v v Veg 70 s10mA = 10Y, 15 = OA Vg * 10. 1p = 5A Vag * IOV. + SA, Te + Vos * 15V. 1p * 6A Vas" 0. Vos = 26V, 05 10Mie Sae Fee. 10 Vpo 2 90V. Ip 6A, 2, * 15 [Sea Figs S3and 14) (MOSFET ewitching umes sre eusentially independent of temperatura) Ainge Junction-to Caw ALL - - 167" | oCow Fines Casa ta-Sink ALL - ot - eCeW } Mounting wiface flat, smooth, and greawed. . Ainga _ dunction-ta-Ambient ALL = 3 | CW I Free Air Operation Body-Drain Diode Ratings and Characteristics 2N6757 2N6758 | 0 ALL - 650 - showing the integra! reverse P-N junction rectifier, 2 9A, <a * IgM. > SJEDEC regittered valuss. Pulse Tart Pulse Width 300 wsee, Duty Cycle S 2% VAAY ty TO OaTAInN REQUIRED PEAK i t Ves* rel . _. Fig. 1 Clamped Inductive Test Circuit , +0 58Vp55 Ve 10 158Vg5s ig, QAAIN CURRENT (AMPERES) tg, DAAIN CLARENT (AMPERES) n 106 Vps. ORAIW TO SOURCE VOLTAGE (VOLTS} Fig. 3 Typicat Output Characteristics 332 * alg ldt = Fig. 2 - Clamped Inductive Waveforms Hn MSE Vos iby a * Tye ee Ty -s58 9 1 2 3 4 $ 6 ? Vag. GATE TO SOURCE VOLTAGE (VOLTS) Fig, 4 Typical Transfer Characteristics"3875081 G E SOLID STATE O1 pe Wss7soa1 o01a3%90 4 {> 7-39-11 Standard Power MOSFETs 2N6757, 2N6758 g g = = i i < a6 ~ z 5 = = 3 s z = < < 5 5 s 8s 2 6 t 2 3 4 5 a ' 2 2 1 s Vs, RAIN TO SOURCE VOLTAGE {VOLTS} Vag, DRAIN TO-SQUACE VOLTAGE IVOLTS) Fig. S-- Typical Saturation Characteristics Fig. 6 Typica! Saturation Characteristics (2N6757) (2N6758}) 20 to 10 a! a g 2 60 z 5 3 = woes ge z 3 29 5 =" 3 3 = 3! 3 10 z 5 = 5 2 =, 05 Ty = 19006 SINGLE PULSE 02 0 2 10 5.0 10 20 30 100 70 500 ip, OAAIN CURRENT (AMPEAES) Vig: DRAIN TO SOURCE VOLTAGE (VOLTS) Fig. 7 Typical Transconductance Vs. Drain Current Fig. 8 Maximum Safe Operating Area 8 3 1600 z 8 3 = = ba s 1200 oo 23 < ai 3 a Z z= a z a = a gs 8 40a e 40 0 0 a0 120 160 a 19 0 0 ag 0 Ty, JUNCTION TEMPERATURE (C) Vos, ORAIR TO SOURCE VOLTAGE (VOLTS) Fig.9 Normalized Typical On-Resistance Vs. Temperature Fig. 10 ~ Typical Capacitance Vs, Drain-to-Source Voltage . -- 3333875081 G E SOLID STATE O11 Standard Power MOSFETs 2N6757, 2N6758 a ni Pg. POWER DISSIPATION (WATTS) & 8 rs] 40 to) n too 140 Te, CASE TEMPERATURE (C) Fig. 11 Power Vs. Temparature Dorating Curve Vog = 90v 15.52 ORF = thie tee tus 0 TO SCOPE Fig. 13 Switching Time Test Circuit ve jsa7s081 oonassa gb PO 1-39-11 2NG7SS lg, SOURCE CURRENT (AMPERES) 10 o 1 i Veg. SOURCE-TO DRAIN VOLTAGE (VOLTS! Fig. 12 Typical Body-Drain Diode Forward Voltage t # [+ PULSE WIDTH GS ton) 90% (HPUT, Vj 50%, so o% 10% Vos on 18/ INPUT PULSE INPUT PULSE ~ RISE TIME FALL TIME 'g (aa)-o VS {off} OUTPUT, Vg Vos ton} } Fig. 14 Switching Time Waveforms