FDN336P a FAIRCHILD SEMICONDUCTOR m FDN336P November 1998 Single P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. SuperSOT-3 G Features MB -1.3A, -20 V. Rosin) = 0.20 @ Vo5= -4.5V Rosiom = 0.27 Q @ Vacs -2.5V. m Low gate charge (3.6 nC typical). High performance trench technology for extremely low Rosiony: = High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. i _ aun Absolute Maximum Ratings _T, = 25C unless other wise noted Symbol | Parameter FDNS36P Units Voss Drain-Source Voltage -20 Voss Gate-Source Voltage +8 l, Drain Current - Continuous 13 - Pulsed -10 P5 Maximum Power Dissipation (Note 1a) 05 Ww (Note 1b} 0.46 Ty Ter | Operating and Storage Temperature Range -55 to +150 C THERMAL CHARACTERISTICS Raw Thermal Resistance, Junction-to-Ambient (Note ta) 250 CW Rae Thermal Resistance, Junction-to-Case (Note 1} 75 CW 3-1 42 FON336P Rev.CElectrical Characteristics (T, = 25C unless otherwise noted ) Symbol _| Parameter __ [Conditions [ min | Typ [ Max | units OFF CHARACTERISTICS BV ass Orain-Source Breakdown Voltage Veg = OV, )=-250 HA -20 Vv ABV c/AT, | Breakdown Voltage Temp. Coefficient |,=-250 pA, Referenced to 25C -16 mV C loss Zero Gate Voltage Drain Current Vog = 16. V, Vag= OV 1 pA [T, =55C 40 | pA loser Gate - Body Leakage, Forward Veg = 8 V, Vag = OV 100 nA lesser Gate - Body Leakage, Reverse Vos = BV, Vog= OV -100 nA ON CHARACTERISTICS (note2) Vesey Gate Threshold Voitage Vos = Veg: Ip = -250 HA 04) 09 1 -15 V AV conf AT, Gate Threshold Voltage Temp. Coefficient |,=-250 pA, Referenced to 25C 3 mv C Reso Static Drain-Source On-Resistance Veg 24.5 V, I5=-13A 0.122] 02 Q [T, =125C 0.18 | 0.32 Vg =2.5V, 1p =-11A 0.19 | 027 loony On-State Drain Current Vog= 4.5 V, Vag= SV 5 Ors Forward Transconductance Vog = -4.5V, =-2 A 4 $ DYNAMIC CHARACTERISTICS om Input Capacitance Vog =-10V, Veg = OV, 330 pF Coss Output Capacitance f= 1.0 MHz 80 pF Cue Reverse Transfer Capacitance 35 pF SWITCHING CHARACTERISTICS (now 2) boson) Tum - On Delay Time Vop = 75 V, 1 =-0.5A, 7 15 ns t Tum - On Rise Time Veg =~4.5V, Roe = 6 Q 12 22 ns toon Tum - Off Delay Time 16 26 ns t Tum - Off Fall Time 5 12 ns Q, Total Gate Charge Vog = 10 V, 1) =-2A, 3.6 5 nc Q.. Gate-Source Charge Vos=-4.5V 08 nc Qa: Gate-Drain Charge 0.7 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Drain-Source Diode Forward Current 042] A Ven Drain-Source Diode Forward Voltage |Veg =OV, 1,=-0.42A (note) 07 |; -12 Vv Note: 1. Ry is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. A, is guaranteed by design while R,,, is determined by the user's board design. a. 250C/W when mounted on f b. 270CAV when mounted on 2 a 0.02 in pad of 20z Cu. d L 0.001 in? pad of 2oz Cu. Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300ps, Duty Cycle < 2.0%. 3-143 FDN336P Rev.C d9eeENdFDN336P Typical Electrical Characteristics Fiosion) : NORMALIZED + Ip , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE - lp, DRAIN CURRENT (A) a a ho 1 2 3 4 5 -Vpg . DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Ty JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature . 1 1.5 2 Vgg . GATE TO SOURCE VOLTAGE (V) 25 Figure 5. Transfer Characteristics. R psion). NORMALIZED DRAIN-SOURCE ON-RESISTANCE - Ip . DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate 05; a = Ip =-0.6A a S04 Lu 3 \ < we b 0.3 ao # \ Zz 02 5 N2Otr- Taz 125C z eeeeees eee gr a 25C o 2 4 6 8 10 +Vgg . GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 0.1 0.01 - Ig , REVERSE DRAIN CURRENT (A) 0.001 ; , 02 04 06 08 1 4.2 14 -Vgp . BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3-144 FDN336P Rev.CTl Typical Electrical Characteristics (continued) oO GO 5-_-- 700 ew = Ip =-1.3A a a wo U <4r a gc Oo > = 200 Ww Ww 9 oO s z 3 Ee 2 fo 5 100 w < GE & & & g 40) f=14 MHz > Vas =0V L . Qn , GATE CHARGE (nc) 04 0.2 05 1 2 5 10 20 9 -Vipg. DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics . 30 50 10 = 0 SINGLE PULSE x= = 3 Rava =270C/W Zz _ Ta = 25C wt 3 cy = 30 g c 8 3 Z 03 @ 20 a Veg =-4.5V a SINGLE PULSE : 10 0.03 Roa =270CWW Ta =28C 0 9.01 5 0.0001 6.001 0.04 01 1 10 400 300 02 05 3 10 30 SINGLE PULSE TIME (SEC) Vg. DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. w 1 Q os ==% Wt 2 02 ween carom we ot eda = tod az 005 WW N ec Zr 002 Ss ee z> 001 23 0.005 Ty Ty =P * Agua (0) 2 Duty Cycle, D=t, At 0.002 1% 0.003 0.0001 0.001 0.01 o4 1 10 100 300 1, , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditians described in Note 1b. Transient thermal response will change depending on the circuit board design. 3. 1 45 FDN336P Rev.C