Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Features Low Capacitance M@ Low Resistance M@ Fast Switching M OxideNitride Passivated M@ Stronger, Full Frame Design M@ High Voltage Description Alphas Silicon Planar and Mesa Beam Lead PIN diodes are surrounded by a glass frame for superior strength and electrical performance that surpasses the standard beam lead PINs. They are designed for low resistance, low capacitance and fast switching time. The oxidenitride passivation layers provide reliable operation and stable junction parameters that provide complete sealing of the junction permitting Electrical Specifications at 25C Low Capacitance Planar Beam Lead Diodes Maximum Ratings 65 to + 150C 65 to + 200C Operating Temperature: Storage Temperature: Power Dissipation (Derate 250 mW Linearly to Zero @ 175C): Typical Lead Strength: 8 Grams Pull use in assemblies with some degree of moisture sealing. A layer of glass provides increased mechanical strength. Alphas beam lead PIN diodes are ideal for microstrip or stripline circuits and for circuits requiring high isolation from a series mounted diode such as broad band multitthrow switches, phase shifters, limiters, attenuators and modulators. Capacitance Series Reverse Recovery Breakdown P : Minority Carrier Time Voltage Total Resistance Lifetime Ip= 20 mA : Part @ 50 Volts, @ 20 mA F Outline al @10uA 1 MH MH IF =10mA, IRp= 6mA Vr= 10V, Drawing Number (Vv) z 100 MHz (ns) 90% Recovery (pF) (Ohms) (ns) Number Min. Typ. Typ. Max. Typ. Max. Typ. Typ. Max. DSG6405000 100 125 0.017 0.02 45 6.0 200 20 35 389-004 4-16 Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com Visit our web site: www.alphaind.comPlanar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Performance Data for DSG6405-000 100 = 10K = @ 10 @ 1K +N = E E = [ oO c = 2 | 2 [ a 1 = 5 100 = 2 E 3 LE & Zot to = foe 0.01 | | ' | | 0.25 0.50 0.75 1.00 1.25 0.1 1 10 100 Forward Voltage (V) Forward Bias Current (mA) Figure 1. Typical Forward Characteristics Figure 3. Typical RF Resistance vs. Forward Bias Current 0.08 45 40 5 0.06 + 30- = c ~ 25 zB $s @ 20- (70 Volts) = 2 0.04 | g 15 S gs 2 10- = 5 J 5 3 g. 5 O 0.75 = a |. 0.60 0.02 \G Miz 3 045 ~ SSasSaeaaeaaaaaass : ~ Y - 0.30 Above 1 GHz LE (20 mMA) | 5 I | | [Tr 0 10 20 30 0 5 10 15 1820 25 30 Reverse Voltage (Volts) Frequency (GHz) Figure 2. Typical Capacitance vs. Reverse Figure 4. Typical Insertion Loss and Isolation Bias Voltage Characteristics Electrical Specifications at 25C Planar Beam Lead Diodes Voltage Sens Reeistance c Junction RF manority Breakdown ( ms) ( rom apacitance Switching carrier Outline Part @10mA Insertion Loss @ Cy Time Lifetime Drawing Number 3 GHz, 50 mA)! (pF) Ts (ns) Number 2 Min. Max. Max. (ns) Typ. p>DSG6474-000 200 4.0 0.02 25 250 169-001 > Available through distribution. 1. Total capacitance calculated from isolation at 9 GHz zero bias. Series resistance and capacitance are measured at microwave frequencies on a sample basis from each lot. All diodes are characterized for capacitance at 50 Volts, 1 MHz, and series resistance at 1 KHz, 50 mA, measurements which correlate well with microwave measurements. 2. Tg measured from RF transition, 90% to 10%, in series configuration. Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com Visit our web site: www.alphaind.com 4-17Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Performance Data for DSG6474000 Figures 5 and 6 show a single pole doublethrow 1-18 GHz switch these diodes are mounted an 38 Alumina, Duriod, or Teflon fiberglass 50 ohm 36 _| microstrip circuits. Typical bonding methods include 32 thermal compression bonding, parallel gap welding, @ 28 and soldering. m 24_] 8 20 _ DSG6474-000 SPDT isolation curves are shown in Figure 6 and 16 insertion loss in Figures 7 and 8. With proper 8 12_| transitions and bias circuits, VSWR is better than 2.0 2 3_ to 1 through 18 GHz. | Switching Considerations 9S 1179 0 2 4 6 8 10 12 14 16 18 The typical minority carrier lifetime of the DSG6474 Frequency (GHz) diodes is 100 ns. With suitable drivers, the individual diodes can be switched from high impedance (off) to Figure 7. Isolation vs. Frequency, SPDT low Rg (on) in about 10 ns. DSG6474-000 Beam Lead Pin Duriod Substrate 50 Ohm Glass Bead Connecting 50 Ohm Lead Transmission Line 25 Figure 5. Typical SPDT Circuit Arrangement 2.07 8 2 155 4 Beam Lead Pin S = 10-7 ks} / Lead orenttion E DsG6474-000 0.5 l l 0 | | \ 0 10 50 100 / \ Bias Current (mA) Metal Conductor Duroid . . . . Figure 8. Diode Insertion Loss vs. Bias SPST, Figure 6. Typical Beam Lead Mounting 18 GHz DSG6474-000 4-18 Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com Visit our web site: www.alphaind.comPlanar and Mesa Beam Lead PIN Diodes Power Handling for DSG6474000 Beam lead diodes are not suitable for high power operation because of high internal thermal impedance of about 600C/Watt. B) 9 oo | ~ \ in Isolation Loss (d nN) | So PT TT 0 2 4 6 8 10 12 14 16 18 Frequency (GHz) Figure 9. Diode Insertion Loss vs. Frequency SPST, 50 mA Bias DSG6474000 With maximum CW power dissipation of 250 mW, the DSG6474-000 diodes are normally rated at 2 Waitt CW with linear derating between 25C and 150C. Figure 10 presents data on CW power handling as a function of bias and frequency. 5000 O4V/ O.1V 2000 a @ 1000 -~ 5 YY 10% increase in > EB 500- small signal A = \ insertion loss S when biased at ~ 200 50 mA. g | z 100 10% decrease in a small signal insertion = _| loss when biased at oO 50 -1V/-AV. | 20-77 TT Td 0.10205 10 20 50 10 20 Frequency (GHz) Figure 10. Typical Series Switch Behavior at Room Temperature and Biased at 50ma/1V/4V DSG6474000 DSG6405-000, DSG6474-000, DSM6300 Series For pulsed operation, the total RF plus bias voltage must not exceed the rated breakdown. Alpha has made high power tests at 1 GHz with 1us pulses, 0.001 duty, with 200V diodes. With 50 mA forward bias, there is no increase in insertion loss over the 0 dBm level with a peak power input of 50 watts. In the open state, reverse bias voltage is required to keep the diode from rectifying, with resultant decrease in isolation and possible failure. Figure 11 shows allowed peak power versus reverse bias at 1 GHz. At this frequency, the required reverse voltage is almost equal to the peak RF voltage; at high frequency, the bias can be reduced somewhat. Experimentation is necessary. 100 VA 80 60 . a 0 10 50 100 Reverse Bias (Volts) Peak Power Watts Figure 11. Peak Power Handling, SPST, 1 GHz DSG6474-000 Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com Visit our web site: www.alphaind.com 4-19Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Mesa Beam Lead Diode Specifications Voltage Capacitance Series Resistance (Ohms) Cit Breakdown Total Ip = 10 mA, Outline Part @lIy<10mA 50V, 1MHz 50 mA, 10 mA, IR=6mA Drawing Number (Vv) (pF) 100 MHz 100 MHz (ns) Number Max. Max. Max. Typ. Typ. Fast Beam Lead Pin Diodes p> DSM6380-000 100 0.025 3.5 4.5 40 389-003 DSM6381-000 150 0.025 4.0 5.0 50 389-003 Low-Loss Ultra-Fast Beam Lead PIN Diodes DSM6361-000 60 0.0251 3.52 _ 25 389-003 > Available through distribution. 1. Capacitance Total @ 10 Volts, 1 MHz, pF, Max. 2. Series Resistance @ 10 mA, Ohms, Max., 100 MHz. Voltage Switching Breakdown @ 10 LA, | Series Resistance | Capacitance Total | Lifetime Time Video Outline Part Reverse Current @ 50 MHz, 50 mA @-10V, 1 MHz (ns) (ns) Recovery | Drawing Number Time Number Min. Typ. Typ. Max. Typ. Max. Typ.! Typ.2 (ns)? Ultra Low Resistance High-Speed Beam Lead PIN Diodes DsMe3s6-000 | 30 so | 12 | 15 | o12 | o15 | 30 | 5 2 389-003 1. Ip =10mA, | = 6mA, recovery to 3 mA. 2. Video recovery time at 2 GHz from Ir = 10mA to Vp = 10V, from 100% to 10% in series configuration. Video reverse recovery time from Ir = 10mA to IR = 2mA, with Vp = 10mvV. Time (ns) 0 > 03 1.0 3 10 30 100 300 re I I I I 5 Mesa Beam om Lead Conventional ZS Beam Lead 6 5 10 a] c 2 <= 15 20 2 Vp = 40 Volts Figure 12. Switching Time Data 4-20 Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com Visit our web site: www.alphaind.comPlanar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Typical Characteristics for DSM6380-000 and DSM6381-000 100 = = 45-| [ / 40 z F 0 \ < = 30- E / 25 5 1 Ee / 20- ee 5 E Q 15 (10 Volts) _ 6 [ zr 10 a op 01 Oo 5 zs g E / sO 0.75 B E 9 0.60 t Ww Poor J 2 DSM6381-000 A mA) | 4s 5 E 0.30 = F / DSM6380-000 + 0.15 & 0.001 rT 7 So 2 4 6 8 10 0 5 10 15 180 25 30 Forward Voltage (V) Frequency (GHz) Figure 15. Typical Isolation and Insertion Loss Figure 13. Typical Forward Characteristics of Characteristics of the DSM6380000/6381000 the DSM6380-000 100 += 20 LE G & 10 m\ c o E DSM6381000 SB 45 2 = ee Q re = S L DSM6380-000 B o 8 = g 0.05 ge! E so 0.04 iT = 9 0.03 x LE 0.02 [- 0.01 1 1 1 10 100 0 10 20 30 Forward Bias Current (mA) Reverse Voltage (Volts) Figure 16. Typical RF Resistance vs. Figure 14. Typical Capacitance vs. Reverse Forward Bias Current for DSM6380-000 Voltage for DSM6380000 and DSM6381-000 Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com Visit our web site: www.alphaind.com 4-21Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Typical Characteristics for DSM6361-000 45 100 E 40- - 35- _ I 30- eg [ 25 5 10 a S = DSM6361-000 3S 15 2 [ |. -~~_ Tr 10 ao S [ aS 5 = a - 3 Oo 0.75 B 2 1-= 5 E 2 (oma) | OOO 2 nF LY YO cc _ + 0.30 [ DSM6361-000 P 9-18 2 i TT 0 5 10 15 1820 25 30 1 1 10 100 Frequency (GHz) Forward Bias Current (mA) Figure 17. Typical Isolation and Insertion Loss Figure 19. Typical RF Resistance vs. Forward Characteristics of the DSM6361000 Bias Current for DSM6361-000 20 L S15 o = 0.06 8 0.05 & 0.04 9 0.03 02 0.01 Above 1 0 10 20 30 Reverse Voltage (Volts) Figure 18. Typical Capacitance vs. Reverse Voltage for DSM6361000 4-22 Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com Visit our web site: www.alphaind.comPlanar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Typical Characteristics for DSM6356-000 100 = 0.20 _ 0 e [ < = EE / _ = / c LN 5 1s & _ c E / g 15 | \\psmesse-000 9 L Sg Le 1 MHz =D 0.1 = = a g = gy Above 1 GHz 5 FE //DsM6356-000 & t+ "0.01 = / 0.10 0.001 0.07 0 O02 O04 O68 O8 1.0 0 10 50 30 Forward Voltage (V) ge (V) Reverse Voltage (Volts) Figure 20. Typical Forward Characteristics Figure 22. Typical Capacitance vs. Reverse Voltage 100 10 DSM6356-000 | _ RF Resistance (Ohms) = 1 10 100 Forward Bias Current (mA) Figure 21. Typical RF Resistance vs. Forward Bias Current Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com Visit our web site: www.alphaind.com 4-23Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Outline Drawings 389-003 4 0.0035 min 0.007 max 0.009 min Potts max leg 0.014 max > | 0.009 min 0.0115 max 0.005 max 0.011 max |~___ 0.032 min 0.035 max. _94 t 0.0002 min 0.0007 max 4 0. 28mm) 0.011 (0, 13mm) 0.005 x. F 0.005/0.13 mmm f 0-003 0.08 . 6D 0.0007/0.018 0. 0002 3.908") 2-PLCS. t 0.011S/0. 292 9" oo80 0.309) 2-PLCS. | to | (0. 36mm) no AX. 0.030 0.76 0.027 0.69 an) ! 169-001 CATHODE END HAS 004 /,10 BLUNTED POINT 002 \.05 nv) 1 Fo7 MAX AS mm 204 -002 210 Mien) L 0005 MAX (.013 mm) 4-24 Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com Visit our web sie: www.alphaind.comPlanar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Outline Drawings 389-003 4 0.0035 min 0.007 max 0.009 min Potts max leg 0.014 max > | 0.009 min 0.0115 max 0.005 max 0.011 max |~___ 0.032 min 0.035 max. _94 t 0.0002 min 0.0007 max 4 0. 28mm) 0.011 (0, 13mm) 0.005 x. F 0.005/0.13 mmm f 0-003 0.08 . 6D 0.0007/0.018 0. 0002 3.908") 2-PLCS. t 0.011S/0. 292 9" oo80 0.309) 2-PLCS. | to | (0. 36mm) no AX. 0.030 0.76 0.027 0.69 an) ! 169-001 CATHODE END HAS 004 /,10 BLUNTED POINT 002 \.05 nv) 1 Fo7 MAX AS mm 204 -002 210 Mien) L 0005 MAX (.013 mm) 4-24 Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com Visit our web sie: www.alphaind.com