Order this document by 2N6338/D SEMICONDUCTOR TECHNICAL DATA " ! . . . designed for use in industrial-military power amplifier and switching circuit applications. * High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 100 Vdc (Min) -- 2N6338 VCEO(sus) = 120 Vdc (Min) -- 2N6339 VCEO(sus) = 140 Vdc (Min) -- 2N6340 VCEO(sus) = 150 Vdc (Min) -- 2N6341 * High DC Current Gain -- hFE = 30 - 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc * Fast Switching Times @ IC = 10 Adc tr = 0.3 s (Max) ts = 1.0 s (Max) tf = 0.25 s (Max) * Complement to 2N6436-38 *Motorola Preferred Device 25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIII III IIII III III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIII III IIII III III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Symbol 2N6338 2N6339 2N6340 2N6341 Unit VCB VCEO 120 140 160 180 Vdc 100 120 140 150 Vdc Emitter-Base Voltage Collector Current Continuous Peak VEB IC 6.0 IB PD 10 Adc 200 1.14 Watts W/C - 65 to + 200 _C Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range CASE 1-07 TO-204AA (TO-3) Vdc Adc 25 50 TJ, Tstg THERMAL CHARACTERISTICS Characteristic Symbol Max Unit JC 0.875 _C/W Thermal Resistance, Junction to Case * Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III v v *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 120 140 150 -- -- -- -- Vdc -- -- -- -- 50 50 50 50 -- -- 10 1.0 Adc mAdc -- 10 Adc -- 100 Adc 50 30 12 -- 120 -- -- -- 1.0 1.8 -- -- 1.8 2.5 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 50 mAdc, IB = 0) 2N6338 2N6339 2N6340 2N6341 Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 70 Vdc, IB = 0) (VCE = 75 Vdc, IB = 0) Adc ICEO 2N6338 2N6339 2N6340 2N6341 Collector Cutoff Current (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150_C) ICEX Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO IEBO Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) ON CHARACTERISTICS (1) DC Current Gain) (IC = 0.5 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 25 Adc, VCE = 2.0 Vdc) hFE -- Collector Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VBE(sat) Base-Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc) VBE(on) -- 1.8 Vdc fT Cob 40 -- MHz -- 300 pF -- 0.3 s Storage Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) tr ts -- 1.0 s Fall Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) tf -- 0.25 s Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS Rise Time (VCC 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc) * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle (2) fT = |hfe| * ftest. 2.0%. 1000 700 VCC + 80 V 500 RC 8.0 OHMS RB 10 OHMS SCOPE 0 - 9.0 V 1N4933 v tr, tf 10 ns DUTY CYCLE = 1.0% - 5.0 V NOTE: For information on Figures 3 and 6, RB and RC were varied to obtain desired test conditions. Figure 2. Switching Time Test Circuit 2 t, TIME (ns) 10 s + 11 V 300 td @ VBE(off) = 6.0 V VCC = 80 V IC/IB = 10 TJ = 25C 200 100 70 50 tr 30 20 10 0.3 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 20 Figure 3. Turn-On Time Motorola Bipolar Power Transistor Device Data 30 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 P(pk) 0.05 0.07 0.05 0.02 t1 0.01 0.03 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 t2 DUTY CYCLE, D = t1/t2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 JC = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 2.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 s 1.0 ms dc 5.0 ms TJ = 200C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW 2N6338 2N6339 RATED VCEO 2N6340 2N6341 20 30 50 70 100 3.0 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) v 200 Figure 5. Active Region Safe Operating Area 5.0 2.0 ts t, TIME ( s) 1.0 3000 0.7 0.5 0.3 0.2 tf 0.1 0.07 0.05 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 20 30 TJ = 25C Cib 2000 C, CAPACITANCE (pF) 3.0 5000 VCC = 80 V IB1 = IB2 IC/IB = 10 TJ = 25C 1000 700 500 300 200 100 70 50 0.1 Cob 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 7. Capacitance 3 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data *2N6338/D* 2N6338/D