Ordering number : ENA1767 MCH3481 N-Channel Power MOSFET http://onsemi.com 20V, 2A, 104m, Single MCPH3 Features * * ON-resistance RDS(on)1=80m (typ.) Halogen free compliance * * 1.2V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 20 PW10s, duty cycle1% When mounted on ceramic substrate (900mm2x0.8mm) V 9 V 2 A 8 A 0.8 W 150 C --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7019A-003 * Package : MCPH3 * JEITA, JEDEC : SC-70, SOT-323 * Minimum Packing Quantity : 3,000 pcs./reel MCH3481-TL-H 0.15 0.25 2.0 Packing Type : TL 1.6 2.1 0 to 0.02 FN LOT No. LOT No. 3 Marking TL 0.65 2 Electrical Connection 0.3 3 0.07 0.85 0.25 1 1 : Gate 2 : Source 3 : Drain 1 MCPH3 2 Semiconductor Components Industries, LLC, 2013 July, 2013 61312TKIM TC-00002669 No. A1767-1/7 MCH3481 Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=7.2V, VDS=0V RDS(on)1 ID=1A, VGS=4.5V 80 104 m RDS(on)2 ID=0.5A, VGS=2.5V 105 147 m RDS(on)3 ID=0.3A, VGS=1.8V 135 203 m RDS(on)4 ID=0.1A, VGS=1.2V 270 540 m Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time 20 VDS=10V, ID=1mA V 0.3 VDS=10V, ID=1A 1 A 10 A 0.9 2.4 V S 175 pF 30 pF Crss 25 pF 6.6 ns Rise Time td(on) tr 27 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=4.5V, ID=2A 28 ns 19 ns 2.9 nC 0.46 nC 0.53 IS=2A, VGS=0V 0.85 nC 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=1A RL=10 VIN D PW=10s D.C.1% VOUT G MCH3481 P.G 50 S Ordering Information Device MCH3481-TL-H Package Shipping memo MCPH3 3,000pcs./reel Pb Free and Halogen Free No. A1767-2/7 MCH3481 1.2V 1.0 0.5 VGS=1.0V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m ID=0.1A 0.3A 0.5A 1.0A 400 300 200 100 0 2 4 6 1.0 1.2 1.4 1.6 1.8 VDS=10V 2.0 IT15670 =0.1A .2V, I D V GS=1 250 200 0.3A A , I D= I =0.5 =1.8V 2.5V, D S VG V GS= 150 100 A V, I D=1.0 V GS=4.5 50 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT15672 IS -- VSD VGS=0V 3 2 3 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 300 5 5 2 5C --2 = a C T 75 1.0 7 5 25 C 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 3 2 0.1 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 0.01 3 0 0.2 0.8 1.0 VDD=10V VGS=4.5V Switching Time, SW Time -- ns 450 350 VGS=1.2V 300 250 200 150 1.8V 2.5V 100 4.5V 50 0 0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 IT15674 SW Time -- ID 2 400 1.2 Diode Forward Voltage, VSD -- V IT15673 RDS(on) -- ID 500 Static Drain-to-Source On-State Resistance, RDS(on) -- m 0.8 350 IT15671 | yfs | -- ID 0.6 RDS(on) -- Ta 0 --60 8 Gate-to-Source Voltage, VGS -- V 7 0.4 400 700 500 0.2 Gate-to-Source Voltage, VGS -- V Ta=25C 600 0 IT15669 RDS(on) -- VGS 800 0 1.0 25C --25C 0 Drain-to-Source Voltage, VDS -- V 0 1 Ta= 75 C 0 2 Ta= 75 C 25 --25C C Drain Current, ID -- A 1.5 25 C 2.5V 1.8V 4.5V 5V ID -- VGS VDS=10V 1. 6.0V Drain Current, ID -- A 3 Ta= --25 C 75 C ID -- VDS 2.0 100 7 5 td(off) 3 tf 2 tr 10 td(on) 7 5 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT16213 2 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 IT15675 No. A1767-3/7 MCH3481 Ciss, Coss, Crss -- VDS 7 Gate-to-Source Voltage, VGS -- V 5 Ciss, Coss, Crss -- pF 3 2 Ciss 100 7 5 Coss 3 2 Crss VGS -- Qg 5 f=1MHz VDS=10V ID=2A 4 3 2 1 10 0 2 4 6 8 10 12 14 16 18 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A 10 7 5 3 2 10 ID=2A DC 3 2 0 s 1m s 10 m 10 0m s op s er 3 2 0.1 7 5 ati on Operation in this area is limited by RDS(on). Ta=25C Single pulse When mounted on ceramic substrate (900mm2x0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 1 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT16931 2 3 Total Gate Charge, Qg -- nC PD -- Ta 1.0 IDP=8A(PW10s) 1.0 7 5 0 IT15676 ASO 2 0 20 Allowable Power Dissipation, PD -- W 7 IT15677 When mounted on ceramic substrate (900mm2x0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT16932 No. A1767-4/7 MCH3481 Taping Specification MCH3481-TL-H No. A1767-5/7 MCH3481 Outline Drawing MCH3481-TL-H Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A1767-6/7 MCH3481 Note on usage : Since the MCH3481 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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