61312TKIM TC-00002669 No. A1767-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
July, 2013
MCH3481
N-Channel Power MOSFET
20V, 2A, 104mΩ, Single MCPH3
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
• ON-resistance RDS(on)1=80mΩ (typ.) • 1.2V drive
•
Halogen free compliance • Protection diode in
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGSS ±9 V
Drain Current (DC) ID2A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 8 A
Allowable Power Dissipation PD
When mounted on ceramic substrate (900mm
2
×0.8mm)
0.8 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7019A-003
Ordering number : ENA1767
Product & Package Information
• Package : MCPH3
• JEITA, JEDEC : SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
FN
LOT No.
LOT No.
TL
1
2
3
1 : Gate
2 : Source
3 : Drain
MCPH3
0.250.25
0.07
2.1
1.6
2.0
0.65 0.3
0.85
0.15
12
3
0 to 0.02
MCH3481-TL-H
MCH3481
No. A1767-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 20 V
Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 μA
Gate-to-Source Leakage Current IGSS VGS=±7.2V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.3 0.9 V
Forward Transfer Admittance | yfs |VDS=10V, ID=1A 2.4 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=1A, VGS=4.5V 80 104 mΩ
RDS(on)2 ID=0.5A, VGS=2.5V 105 147 mΩ
RDS(on)3 ID=0.3A, VGS=1.8V 135 203 mΩ
RDS(on)4 ID=0.1A, VGS=1.2V 270 540 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 175 pF
Output Capacitance Coss 30 pF
Reverse Transfer Capacitance Crss 25 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
6.6 ns
Rise Time tr 27 ns
Turn-OFF Delay Time td(off) 28 ns
Fall Time tf19 ns
Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=2A 2.9 nC
Gate-to-Source Charge Qgs 0.46 nC
Gate-to-Drain “Miller” Charge Qgd 0.53 nC
Diode Forward Voltage VSD IS=2A, VGS=0V 0.85 1.2 V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
MCH3481-TL-H MCPH3 3,000pcs./reel Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=1A
RL=10Ω
VDD=10V
VOUT
MCH3481
VIN
4.5V
0V
VIN
MCH3481
No. A1767-3/7
ID -- VGS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
0
2
1
3
IT15670
0 0.4 0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8
VDS=10V
--25°C
Ta=75°C
Ta= --25°C
25
°
C
75°C
25
°
C
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ambient Temperature, Ta -- °C
RDS(on) -- TaRDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
IS -- VSD
Source Current, IS -- A
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
| yfs | -- ID
Forward T ransfer Admittance, | yfs | -- S
SW Time -- ID
Switching Time, SW Time -- ns
Drain Current, ID -- A
0 0.40.2 0.6 1.21.00.8
0.01
0.1
7
5
3
2
2
1.0
7
5
3
2
5
3
--60 --40 --20 0 20 40 60 80 100 120 140 160
0
50
150
100
350
300
400
250
200
VGS=1.2V, ID=0.1A
VGS=2.5V, ID=0.5A
VGS=1.8V, ID=0.3A
VGS=4.5V, ID=1.0A
IT15671
Ta=25°C
IT15672
IT15673 IT15674
Ta= --25°C
75°C
25
°
C
VDS=10V
--25°C
25°C
Ta=75°C
VGS=0V
10
7
5
3
2
100
7
5
3
2
2
0.1 21.0
357
IT15675
VDD=10V
VGS=4.5V
td(off)
tr
tf
23 5
td(on)
ID=0.1A
1.0A
06428
0
200
100
400
300
600
500
700
800
0.1
2
1.0
7
7
5
3
2
7
5
3
0.1 2
0.01 5723 1.0 25733
0.3A
0.5A
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
RDS(on) -- ID
0.001 0.01 1.0 10
35720.1
357235723572
150
100
50
300
200
250
350
450
400
500
0
IT16213
VGS=1.2V
2.5V
1.8V
4.5V
0
0.5
1.5
1.0
2.0
0
IT15669
0.1 0.40.2 0.60.50.3 0.80.7 0.9 1.0
VGS=1.0V
1.8V
4.5V
2.5V
1.2V
1.5V
6.0V
MCH3481
No. A1767-4/7
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
Ciss, Coss, Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
02081216421014186
IT15676
10
7
7
100
5
3
2
7
5
3
2
Crss
Coss
Ciss
0321
0
1
2
3
4
5
IT15677
VDS=10V
ID=2A
f=1MHz
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
Operation in this area
is limited by RDS(on).
DC operation
100μs
1ms
10ms
100ms
IT16931
2
3
5
7
2
0.1
3
5
7
1.0
2
2
3
5
7
10
0.01 0.10.01 5723 2 5723 325731.0 10
ID=2A
IDP=8A(PW≤10μs)
IT16932
0
020 40
0.4
0.6
60 80 100 120 140 160
0.2
0.8
1.0
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2×0.8mm)
When mounted on ceramic substrate
(900mm2×0.8mm)
MCH3481
No. A1767-5/7
Taping Specifi cation
MCH3481-TL-H
MCH3481
No. A1767-6/7
Outline Drawing Land Pattern Example
MCH3481-TL-H
Mass (g) Unit
0.007
* For reference
mm Unit: mm
0.65 0.65
0.4
2.1
0.6
MCH3481
PS No. A1767-7/7
Note on usage : Since the MCH3481 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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