IT T CORP/ I T T CMPNTS peo ULE D MM 4682684 DOOLuO4 8 EMITO T-O8-09 General Purpose and Switching Diodes in DO-35 Package & DO-34 Package Type Peakinv. Max.Aver. Power dunction = Forward Reverse Reverse Recovery Time Voltage Rectified Dissipation Tempera- Voltage Current Ip PIV Currentl) at25C ture T, Orop Vr atl, at Va Volts mA max.mW max.C max.V mA max.nA Volts trns Conditions 1N914 100 75 500 200 1.0 10 25 20 max.4.0 p= 10MA, Va=6V,R. = 1000, tola=1mA 1H4148 100 180 500 200 1.0 10 25 20 max.4.0 te 10mA,Va=6V,R.= 1002, tola=t mA 184150 50 200 500 200 1.0 200 100 50 max.4.0 iealg=10to 200 mA, to0.1 Ie 184152 40 150 400 175 0.55 0.10 50 30 max, 2.0 le= 10 mA, Va=6V,R.= 1008, tolant mA TN4154 35 150 500 200 1.0 30 100 25 max. 2.0 Ip= 10 mA, Va=6V, R= 1009, tola=imA 1N4448 100 150 500 200 1.0 100 25 20 max.4.0 ip=10mA,Va=6V, R= 1002, tola=1mA tHS450 40 150 400 175 0.54 0.50 50 30 max.4.0 e=In=10mA,tola=1mA 1N4454 75 150 400 175 1.0 10 100 50 max.4.0 _Ie=Ip=10mA,tola=1mA General Purpose and Switching Diodes in MiniMELF Package Te Peak Inv. Max.Aver. Power Junction = Forward Reverse Reverse Recovery Time Voitage Rectified Dissipation Tempera- Voltage Current Iq PIV Currentlh at25C ture T, Drop Ve at lr at Va Volts mA max.mW max.C max.Vo mA max.nA Volts tyns Conditions LL4148 100 150 500 200 1.0 10 25 20 max. 4.0 le= 10 MA, Va=6V, Ry = 1009, tola=tmA_ 14150 50 200 00 200 1.0 200 100 50 max. 4.0 lesta=10to200mA,toO.1 te LL4152 40 150 400 175 0.55 0.10 50 30 max.2.0 t= 10MA,Va=6V,R.= 1002, tola= 1 mA 014154 35 150 500 200 1.0 30 100 25 Max.2.0 ie=10mA,Va=6V, Ry = 1009, tola=1mA Li4448 100 150 500 200 1.0 100 25 20 max. 4.0 fe= 10 MA, Va=6V,R_= 1009, tola=1mA 114450 40 150 400 175 0.54 0.50 50 30 max, 4.0 te=ta=10mA, tola~1mA ib4454 75 150 400 175 1.0 10 100 50 max. 4.0 lr=lp=10mMA, tola=1mA SCHOTTKY DIODES Sicon Schottky Barrier Diodes in DO-35 Package forgeneral purpose applications with low forward volta Using the type designations LL101A, LL103A and so @ectrical characteristics. ge drop and very fast switching times. on, these Schottky Barrier diodes are available in the MiniMELF package with the same Type Peak Inv. Power Junction Forward Voltage Drop Reverse Capacitance Reverse Recovery Voltage Dissipation and Ve at lr Current at Time ty PIV at 25C Storage InatV_ Ve=Vp=0, Temp. f=1 MHz Volts max.mW max.C max.V atmA max.V atmA max.wA atV = max.pF max.ns Conditions SBI01A* 60 400 200 0.41 1 1.0 15 0.2 50 2.0 1 fp=!p=5mAtoO0.1 la $d101B 50 400 200 0.40 1 0.95 15 0.2 40 721 1 le=ln=5 mMAto0.1 Ip SB101C 40 400 200 0.39 1 0.80 15 0.2 "30 2.2 1 le=In=5 mAto0.t la S5103A 40 400 125 0.37 20 0.6 200 5.0 30 50 10 Ip=1p=200 mA to 0.1 Ip $D103B 30 400 125 0.37 20 0.6 200 5.0 20 50 10 le=la=200 mA to0.1 I, $B103C 20 400 125 0.37 20 0.6 200 5.0- 10 50 10 lr=Ip=200 mAto0.1 Iq ZEDEC Equivalent: 1N6263 ITT Components