R07DS0149EJ0200 Rev.2.00 Page 1 of 7
Sep 16, 2010
Preliminary Datasheet
BCR12PM-14LG
Triac
Medium Power Use
Features
IT (RMS) : 12 A
VDRM : 800 V (Tj = 125C)
IFGTI, IRGTI, IRGT III : 30 mA
Viso : 2000 V
The Product guarant eed maximum junction
temperature 150C
Insulated Type
Planar Type
UL Recognized: Yellow Card No. E223904
Outline
RENESAS Package code:
PRSS0003AA-A
(Package name:
TO-220F )
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
2
13
2
13
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Voltage class
Parameter Symbol
14 Unit Conditions
800 V Tj = 125C
Repetitive peak off-state voltageNote1 V
DRM 700 V Tj = 150C
Non-repetitive peak off-state voltageNote1 V
DSM 840 V
R07DS0149EJ0200
(Previous: REJ03G1556-0100)
Rev.2.00
Sep 16, 2010
BCR12PM-14LG Preliminary
R07DS0149EJ0200 Rev.2.00 Page 2 of 7
Sep 16, 2010
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 12 A
Commercial frequency, sine full wave
360° conduction, Tc = 93C
Surge on-state current ITSM 120 A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 60 A2s Value corresponding to 1 cycl e of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 5 W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction temperature Tj – 40 to +150 C
Storage temperature Tstg – 40 to +150 C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 25C, AC 1 minute,
T1 T2 G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150C, VDRM applied
On-state voltage VTM — — 1.6 V
Tc = 25C, ITM = 20 A,
Instantaneous measurement
V
FGT — — 1.5 V
V
RGT — — 1.5 V
Gate trigger voltageNote2
V
RGT — — 1.5 V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
I
FGT — — 30 mA
I
RGT — — 30 mA
Gate trigger currentNote2
I
RGT — — 30 mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage VGD 0.2/0.1 — — V Tj = 125C/150C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 4.0 C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 10/1 — — V/s Tj = 125C/150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is sho wn in the table bel ow.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 6.0 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
VD
(dv/dt)c
BCR12PM-14LG Preliminary
R07DS0149EJ0200 Rev.2.00 Page 3 of 7
Sep 16, 2010
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
10
0
2510
1
80
40
37
10
2
4
25374
120
160
200
60
20
100
140
180
0
0.5 1.5 2.5 3.51.0 2 3.0 4.0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
10
0
2310
1
5710
2
23 5710
3
23 5710
4
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
10
1
10
3
7
5
3
2
10
2
7
5
3
2
4
4
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120 160
–60 –20 20 60 100 140
–40 0 40 80 120 160
Tj = 25°C
Tj = 150°C
VGM = 10V
IGM = 2A
PGM = 5W
VGT = 1.5V
IFGT I, IRGT III
IRGT I VGD = 0.1V
PG(AV) =
0.5W IRGT I, IRGT III
IFGT I
Typical Example
Typical Example
23 57 23 57 23 57
0.0
0.5
1.0
1.5
3.0
3.5
4.0
4.5
10–1 100101102
102103104
2.0
2.5
BCR12PM-14LG Preliminary
R07DS0149EJ0200 Rev.2.00 Page 4 of 7
Sep 16, 2010
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Conduction Time (Cycles at 60Hz)
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Ambient Temperature (°C)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C)× 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
3
10
–1
10
3
10
4
10
2
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
23 57 23 57
10
2
10
5
23 57 23 57
16
12
6
4
2
14
10
8
0160 24 86 101214
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
160
120
100
60
20
01602 6 10 14
40
80
140
4812
160
120
100
60
20
04.00 0.5 1.5 2.5 3.5
40
80
140
1.0 2.0 3.0
160
120
100
60
20
01602 6 10 14
40
80
140
4812
–60 –20 20 60 100 140–40 0 40 80 120 160
No Fins
360° Conduction
Resistive,
inductive loads
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
Curves apply regardless
of conduction angle All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
360° Conduction
Resistive,
inductive loads
BCR12PM-14LG Preliminary
R07DS0149EJ0200 Rev.2.00 Page 5 of 7
Sep 16, 2010
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C
)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (t°C)
Breakover Voltage (25°C)× 100 (%)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C)× 100 (%)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
103
7
5
3
2
102
7
5
3
2
4
4
101160–40 0 40 80 120
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–60 –20 20 60 100 140–40 0 40 80 120 160
Typical Example
Distribution T2+, G–
Typical Example
T2+, G+
T2–, G–Typical Example
160
100
80
40
20
0
140
60
120
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
10
2
7
5
10
1
3
2
7
5
10
0
3
2
–60 –20 20 60 100 140–40 0 40 80 120 160
2310
1
5710
2
23 5710
3
23 5710
4
2310
0
5710
1
23 5710
2
23 5710
3
120
0
20
40
60
80
100
140
160
Typical Example Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Main Voltage
Main CurrentIT(di/dt)c
τ
VD
Time
Time
(dv/dt)c
I Quadrant
III Quadrant
Minimum
Characteristics
Value
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
Typical Example
Tj = 150°C
III Quadrant
I Quadrant
BCR12PM-14LG Preliminary
R07DS0149EJ0200 Rev.2.00 Page 6 of 7
Sep 16, 2010
C
1
= 0.1 to 0.47μF
R
1
= 47 to 100Ω
C
0
= 0.1μF
R
0
= 100Ω
Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Tria
c
Test Procedure I
Test Procedure III
Test Procedure II
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC)× 100 (%)
Gate Current Pulse Width (μs)
Gate Trigger Current vs.
Gate Current Pulse Width
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
C
1
C
0
R
0
R
1
6Ω6Ω
6Ω
6V6V
6V
330Ω330Ω
330Ω
A
V
A
V
A
V
Typical Example
I
RGT III
I
RGT I
I
FGT I
Load
10
2
7
5
10
1
3
2
7
5
10
0
3
2
2310
0
5710
1
23 5710
2
23 5710
3
Typical Example
Tj = 150°C
I
T
= 4A
τ = 500μs
V
D
= 200V
f = 3Hz
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
I Quadrant
III Quadrant
Minimum
Characteristics
Value
BCR12PM-14LG Preliminary
R07DS0149EJ0200 Rev.2.00 Page 7 of 7
Sep 16, 2010
Package Dimensions
SC-67 2.0g
MASS[Typ.]
⎯PRSS0003AA-A
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
Package Name
TO-220F
5.2
10.5Max
5.0
17
3.6
13.5Min
8.5 1.2
0.8
2.542.54 0.5 2.6
4.5
2.8
1.3Max
φ3.2±0.2
Order Code
Lead form Standard packing Quantity Standard order code Standard order code
example
Straight type Vinyl sack 100 Type name BCR12PM-14LG
Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code BCR12PM-14LG-A8
Note : Please confirm the specification about the shipping in detail.
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