BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications * Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP *Collector Current (Pulse) 10 A IB Base Current PC Collector Dissipation (TC=25C) TJ TSTG 2 A 65 W Junction Temperature 150 C Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C ICEO Collector Cut-off Current ICES Collector Cut-off Current : BD243/243A : BD243B/243C : BD243 : BD243A : BD243B : BD243C Test Condition IC=30mA, IB=0 Min. Typ. Max. 45 60 80 100 Units V V V V VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.7 0.7 mA mA VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 0.4 0.4 0.4 0.4 mA mA mA mA 1 mA 1.5 V 2 V IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE *DC Current Gain VCE = 4V, IC = 0.3A VCE = 4V, IC = 3A VCE(sat) *Collector-Emitter Saturation Voltage IC = 6A, IB = 1A VBE(on) *Base-Emitter ON Voltage VCE = 4V, IC = 6A 30 15 * Pulse Test :PW=300s, duty Cycle<20% Pulsed (c)2000 Fairchild Semiconductor International Rev. A, February 2000 1.8 1000 VBE(sat)(V), SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 2V 100 IC = 10.1 IB 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 10 0.01 0.1 1 0.5 0.1 10 IC[A], COLLECTOR CURRENT 1 10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage 100 1 IC[A], COLLECTOR CURRENT 0.1 IC(max) 10 10 m 1 1 10 10s 1m s 100 s BD243 BD243A BD243B BD243C 0.1 0.01 0.1 s DC VBE(sat)(V), SATURATION VOLTAGE IC = 10.1 IB 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 80 PC[W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 o T[ C], CASE TEMPERATURE Figure 5. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BD243/A/B/C Typical Characteristics BD243/A/B/C Package Demensions TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2000 Fairchild Semiconductor International Rev. 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