Chroma amplifier transistor (300V, 0.1A) 2SC4061K Dimensions (Unit : mm) (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO 300 300 V V Emitter-base voltage Collector current Collector power dissipation Junction temperature VEBO IC PC 5 100 0.2 V mA W Tj 150 C Storage temperature Tstg -55 to +150 C 0.3Min. 0.8 0~0.1 Parameter 0.15 Absolute maximum ratings (Ta=25C) ROHM : SMT3 EIAJ : SC-59 1.1 2.8 Each lead has same dimensions (1) Emitter (2) Base (3) Collector Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SC4061K SMT3 NP AN T146 3000 Denotes hFE Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO 300 300 5 - - - - - - V V V IC=50A IC=100A IE=50A ICBO IEBO - - - - 0.5 0.5 A A VCB=200V VEB=4V IC/IB=50mA/5mA VCE(sat) - - 2 V hFE 56 fT 50 - 100 - MHz Cob - 3 120 - - www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. pF Conditions VCE/IC=10V/10mA VCE=30V, IE=-10mA, f=30MHz VCB=30V, IE=0A, f=1MHz 1/3 2012.01 - Rev.C 2SC4061K Data Sheet Electrical characteristics curves 0.4mA 20 0 IB=0.2mA 0 2 4 6 8 0.6mA 40 0.4mA 20 0 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) IB=0.2mA 0 4 12 16 10 5 2 1 0.5 200 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics ( ) 500 8 20 500 400 600 800 1000 1200 1400 1600 BASE TO EMITTER VOLTAGE : VBE (mV) Fig.2 Ground emitter output characteristics ( ) Ta=25C -25C 40 60 50 C A 1.0m 0.8mA A m .6 0 A 1.0m 0.8mA Ta=10 0 60 1.4mA 1.2mA 80 VCE=10V 100 25C 1.4mA 1.2mA 200 2.0mA 1.8mA 1.6mA COLLECTOR CURRENT : IC (mA) 80 100 Ta=25C Ta=25C 2.0mA 1.8mA 1.6mA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 Fig.3 Ground emitter propagation characteristics 2 VCE=10V Ta=25C 100 5V 50 20 10 5 0.2 0.5 1 2 5 10 20 Ta=100C 200 100 25C 50 -25C 20 10 5 2 0.2 50 100 COLLECTOR CURRENT : IC (mA) 0.5 1 2 5 10 20 50 100 Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) 2 200 Ta=25C IC/IB=10 1 Ta=-25C 25C VBE(sat) 0.5 100C 0.2 0.1 Ta=100C 25C VCE(sat) -25C 0.05 0.02 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage Base-emitter saturation voltage vs. collector current www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. 0.5 IC/IB=10 0.2 0.1 5 0.05 0.02 0.2 0.5 1 COLLECTOR CURRENT : IC (mA) TRANSITION FREQUWNCY : fT (MHZ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) DC CURRENT GAIN : hFE VCE=10V VCE=30 10V 50 20 10 -2 -5 -10 -20 -50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 2/3 5 10 20 50 100 Fig.6 Collector-emitter saturation voltage vs. collector current 100 5 -1 2 COLLECTOR CURRENT : IC (mA) -100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 200 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 1 20 Ta=25C f=1MHz 10 IE=0A 5 2 1 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector-base voltage 2012.01 - Rev.C Data Sheet Ta=25C single nonrepetitive pulse 500m IC Max (Pulse) 200m s m s =1 0m Pw s =1 m Pw 00 =1 s Pw w=2 P COLLECTOR CURRENT : IC (A) 2SC4061K DC 100m 50m 20m 10m 5m 2m 1m 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area www.rohm.com c 2012 ROHM Co., Ltd. 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