2N2369A
SILICON
NPN TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2369A is a
silicon epitaxial planar NPN transistor designed for ultra
high speed saturated switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCES 40 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 4.5 V
Continuous Collector Current IC 200 mA
Peak Collector Current ICM 500 mA
Power Dissipation PD 360 mW
Power Dissipation (TC=25°C) PD 1.2 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 486 °C/W
Thermal Resistance ΘJC 146 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=20V 400 nA
ICBO V
CB=20V, TA=150°C 30 μA
BVCBO I
C=10μA 40 V
BVCES I
C=10μA 40 V
BVCEO I
C=10mA 15 V
BVEBO I
E=10μA 4.5 V
VCE(SAT) I
C=10mA, IB=1.0mA 200 mV
VCE(SAT) I
C=10mA, IB=1.0mA, TA=125°C 300 mV
VCE(SAT) I
C=30mA, IB=3.0mA 250 mV
VCE(SAT) I
C=100mA, IB=10mA 500 mV
VBE(SAT) I
C=10mA, IB=1.0mA 700 850 mV
VBE(SAT) I
C=30mA, IB=3.0mA 1.15 V
VBE(SAT) I
C=100mA, IB=10mA 1.6 V
hFE V
CE=1.0V, IC=10mA 40 120
hFE V
CE=0.35V, IC=10mA, TA=–55°C 20
hFE V
CE=0.4V, IC=30mA 30
hFE V
CE=1.0V, IC=100mA 20
TO-18 CASE
R1 (23-June 2014)
www.centralsemi.com
2N2369A
SILICON
NPN TRANSISTOR
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
fT V
CE=10V, IC=10mA, f=100MHz 500 MHz
Cob V
CB=5.0V, IE=0, f=140kHz 4.0 pF
ton V
CC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 12 ns
toff V
CC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 18 ns
ts V
CC=10V, IC=10mA, IB1=IB2=10mA 13 ns
www.centralsemi.com
R1 (23-June 2014)
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(001)
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