
2007. 10. 30 1/2
SEMICONDUCTOR
TECHNICAL DATA
MBRF20200CT
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
SWITCHING TYPE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
Average Output Rectified Current
: IO=20A.
Repetitive Peak Reverse Voltage
: VRRM=200V.
Fast Reverse Recovery Time : trr=35ns.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
TO-220IS
0.76+0.09/-0.05
A
B
C
D
E
F
G
0.5+0.1/-0.05
H
1.2+0.25/-0.1
1.5+0.25/-0.1
J
K
L
M
N
P
Q
R
F
Q
123
L
P
N
B
G
J
M
D
NH
E
R
K
L
S0.5 Typ
S
D
AC
2.70 0.3
+
_
12.0 0.3
+
_
13.6 0.5
+
_
3.7 0.2
+
_
Φ3.2 0.2
+
_
10.0 0.3
+
_
15.0 0.3
+
_
3.0 0.3
+
_
4.5 0.2
+
_
2.54 0.1
+
_
+
2.6 0.2
_
6.8 0.1
+
_
1. ANODE
2. CATHODE
3. ANODE
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage VRRM 200 V
Average Output Rectified
Current (Note) IO20 A
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz) IFSM 120 A
Junction Temperature Tj-40 150
Storage Temperature Range Tstg -55 150
Note : average forward current of centertap full wave connection.
3
1
2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage (Note) VFM IFM=5A - - 0.95 V
Repetitive Peak
Reverse Current (Note) IRRM VRRM=Rated - - 150
Reverse Recovery Time (Note) trr IF=1.0A, di/dt=-30A/ - - 35 ns
Thermal Resistance (Note) Rth(j-c) Juction to Case - - 3 /W
Note : A value of one cell