Order this document by BRX44/D SEMICONDUCTOR TECHNICAL DATA PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92) package which is readily adaptable for use in automatic insertion equipment. * * * * Sensitive Gate Trigger Current -- 200 A Maximum Low Reverse and Forward Blocking Current -- 100 A Maximum, TC = 125C Low Holding Current -- 5 mA Maximum Glass-Passivated Surface for Reliability and Uniformity SCRs 0.8 AMPERE RMS 30 TO 400 VOLTS CASE 29-04 (TO-226AA) STYLE 3 WITH TO-18 LEADFORM* MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating Symbol Value Unit VDRM, VRRM 30 60 100 200 400 Volts IT(RMS) 0.8 Amp Peak Forward Surge Current, TA = 25C (1/2 Cycle, Sine Wave, 60 Hz) ITSM 8 Amps Circuit Fusing Considerations, TA = 25C (t = 8.3 ms) I2t 0.15 A2s Peak Gate Power -- Forward, TA = 25C PGM 0.1 Watt Peak Gate Current Forward, TA = 25C (300 s, 120 PPS) IGFM 1 Amp Peak Gate Voltage -- Reverse VGRM 5 Volts TJ -40 to +125 C Tstg -40 to +150 C +230 C Peak Repetitive Forward and Reverse Blocking Voltage (TJ = 25 to 125C, RGK = 1000 ) BRX44 BRX45 BRX46 BRX47 BRX49 Forward Current RMS (All Conduction Angles) Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range Lead Solder Temperature ( 1.5 mm from case, 10 s max.) t *European part numbers only . Package is Case 29 with Leadform 18. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RJC 75 C/W Thermal Resistance, Junction to Ambient RJA 200 C/W ELECTRICAL CHARACTERISTICS (TC = 25C, RGK = 1000 unless otherwise noted.) Characteristic Symbol Min Max Unit Peak Forward Blocking Current (VD = Rated VDRM @ TC = 125C) IDRM -- 100 A Peak Reverse Blocking Current (VR = Rated VRRM @ TC = 125C) Forward "On" Voltage(1) (ITM = 1 A Peak @ TA = 25C) IRRM -- 100 A VTM -- 1.7 Volts Gate Trigger Current (Continuous dc)(2) (Anode Voltage = 7 Vdc, RL = 100 Ohms) TC = 25C IGT -- 200 A Gate Trigger Voltage (Continuous dc) (Anode Voltage = 7 Vdc, RL = 100 Ohms) (Anode Voltage = Rated VDRM, RL = 100 Ohms) TC = 25C TC = -40C TC = 125C VGT -- -- 0.1 0.8 1.2 -- Volts Holding Current (Anode Voltage = 7 Vdc, initiating current = 20 mA) TC = 25C TC = -40C IH -- -- 5 10 mA p 1%. FIGURE 1 -- CURRENT DERATING (REFERENCE: CASE TEMPERATURE) 130 = CONDUCTION ANGLE 120 FIGURE 2 -- CURRENT DERATING (REFERENCE: AMBIENT TEMPERATURE) CASE MEASUREMENT POINT -- CENTER OF FLAT PORTION 110 100 dc 90 80 = 30 60 70 90 120 180 60 = CONDUCTION ANGLE 110 TYPICAL PRINTED CIRCUIT BOARD MOUNTING 90 70 50 = 30 60 30 50 0 0.1 0.2 0.3 0.4 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 2 130 TC, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 1. Forward current applied for 1 ms maximum duration, duty cycle 2. RGK current is not included in measurement. 0.5 0 0.1 0.2 90 120 0.3 180 0.4 IT(AV), AVERAGE ON-STATE CURRENT (AMP) Motorola Thyristor Device Data PACKAGE DIMENSIONS A B R STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE P L F SEATING PLANE K D X X G J H V C SECTION X-X 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. N N DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- CASE 029-04 (TO-226AA) CASE 029-04 (TO-226AA) ISSUE AD DATE 12/11/92 Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data *BRX44/D* BRX44/D