SIEMENS PNP Silicon Darlington Transistors BCV 26 BCV 46 @ For general AF applications @ High collector current @ High current gain @ Complementary types: BCV 27, BCV 47 (NPN) VPSOS161 Type Marking Ordering Code Pin Configuration | Package" (tape and reel) 1 2 3 BCV 26 FDs Q62702-C1493 B E C | SOT-23 BCV 46 FEs Q62702-C1475 Maximum Ratings Parameter Symbol | Values Unit BCV 26 BCV 46 Collector-emitter voltage Vero 30 60 Vv Collector-base voltage Vcso 40 80 Emitter-base voltage Vepo 10 10 Collector current Ic 500 mA Peak collector current Icom 800 Base current Te 100 Peak base current Tem 200 Total power dissipation, Ts = 74 C | Pret 360 mw Junction temperature Tj 150 Cc Storage temperature range Tstg ~ 65... + 150 Thermal Resistance Junction - ambient?) Riha < 280 K/W Junction - soldering point Rirus $210 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm 1.5 mnv6 cm? Cu. Semiconductor Group 825 5.91SIEMENS BCV 26 BCV 46 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. DC characteristics Collector-emitter breakdown voltage Vipryceo Vv Ie=10mA BCV 26 30 - - BCV 46 60 - _ Collector-base breakdown voltage Viaryoso Ic = 100 pA BCV 26 40 - - BCV 46 80 ~ _ Emitter-base breakdown voltage, /e = 10 pA Veryepo | 10 - - Collector cutoff current Tero Vca = 30 V BCV 26 ~ - 100 nA Vee = 60 V BCV 46 - - 100 nA Ves = 30 V, Ta= 150C BCV 26 - - 10 pA Ves = 60 V, Ta = 150C BCV 46 - - 10 pA Emitter cutoff.current, Ves = 4 V TeBo - - 100 nA DC current gain) Are ~ Ic = 100 pA, Voe=1V BCV 26 4000 |- - BCV 46 2000 |- - Ic= 10mA, Vcee=5V BCV 26 10000 | - - BCV 46 4000 |- - Ie = 100 mA, VeE=5 V BCV 26 20000 | - - BCV 46 10000 | ~ ic=0.5 A, Ver =5V BCV 26 4000 | - BCV 46 2000 |- - Collector-emitter saturation voltage) Voesat - ~ 1 Vv Ic = 100 mA, /8 = 0.1 MA Base-emitter saturation voltage") Vetsat - - 1.5 Ie = 100 mA, Js = 0.1 MA AC characteristics Transition frequency Ff - 200 |- MHz Ic = 50 mA, Vee = 5 V, f= 20 MHz Output capacitance Cobo - 4.5 = pF Ves = 10 V, f= 1 MHz 1) Pulse test: 1< 300 us, D = 2 %. Semiconductor GroupSIEMENS BCV 26 BCV 46 Total power dissipation Pio: = f (7s"; Ts) * Package mounted on epoxy 400 ecy 26/46 EHP00290 mW . \ Prot \ 300 \ N Vs 200 rn) \ 100 N 0 0 50 100 C 150 T.3 I, Permissible pulse load Pict max/Prooc = f (tp) EHP00282 P. totmox 5 Prot oc 107 NNT ith Bt tM Hi in N wn as iain SST i) al ry iti mon TCU Un ST TTT TSU yo 1075 sot 1073 107? 5 i ' Semiconductor Group Collector-base capacitance Cceo = f (Vcso) Emitter-base capacitance Ceeo = f (Veao) ep (cae) fe acy 46 10 EHPOO291 0 1 1 107 1 v 10 ~> Vego (Vere) Transition frequency ft = f (/c) Vee =5V f 827 EHPOO294 103 BCv 46 MHz 10 10! 102 mA 10 eh,SIEMENS Base-emitter saturation voltage Ic = f (Voesat) hre = 1000 103 BCV 26/46 EXPO0295 Ig =omA 10? 10! G "0 a 1.0 2.0 Vv 30 __ Veesot Collector cutoff current /cso = f (7a) Ves = VcE max 10! acy 26/46 EHPOO297 ego 0A 105 102 10! 0 10"0 50 100 C = 150 Semiconductor Group BCV 26 BCV 46 Collector-emitter saturation voltage Ic = f (Vecsat) hre = 1000 103 BCY 26/46 EHPO0296 Ie mA 102 to! 0 Oo 05 10 v.15 ~ Veesat DC current gain hre = f (Ic) Vee = 5 V g BV HPO0298 10 5 104 10 107" 10 10! 107 ma 105 + fe 828