VUB72-12NOXT
9~
6
7~
1~
10
4
5
2
NTC
11 12
3~ Rectifier Bridge + Brake Unit + NTC
Standard Rectifier Module
Part number
VUB72-12NOXT
Backside: isolated
Features / Advantages: Applications: Package:
● Package with DCB ceramic base plate
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● NTC
● 3~ Rectifier with brake unit
for drive inverters
V1-A-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
RRM
1200
I 75
FSM
600
DAV
V=V
A
A
=
=
I
3~
Rectifier
CES
1200
Brake
Chopper
I 58
CE(sat)
1.85
C25
V= V
A
V
=
=
V
IXYS reserves the right to change limits, conditions and dimensions. 20151102dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
VUB72-12NOXT
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.10
R1.1 K/W
R
min.
75
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
110 WT = 25°C
C
RK/W0.3
25
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.38
T = 25°C
VJ
150
V
F0
V0.79T = °C
VJ
150
r
F
7.7 mΩ
V1.01T = °C
VJ
I = A
F
V
25
1.37
I = A
F
75
I = A
F
75
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
19
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
600
650
1.30
1.26
A
A
A
A
510
550
1.80
1.76
1200
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
IXYS reserves the right to change limits, conditions and dimensions. 20151102dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
VUB72-12NOXT
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current
A
58
A
C
VJ
Symbol
Definition
Ratings
typ.
max.
min.
Conditions
Unit
40
V
V
CE(sat)
total power dissipation
195 W
collector emitter leakage current
6.5 V
turn-on delay time
70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
105
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
C GE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
C GE CE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current
V = ±20 V
GE
2.15
2.15
5.95.4
mA
0.1 mA
0.1
500
G(on)
total gate charge
V = V; V = 15 V; I = A
CE
Q
GE C
110 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
3.8 mJ
4.1 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
140 A
R
thJC
thermal resistance junction to case
0.25
K/W
V
RRM
V1200
max. repetitive reverse voltage
T = 25°C
VJ
T = 25°C
forward current
A
31
A
C
21
T = °C
C
I
F25
I
F
T = 25°C
forward voltage
V
2.97
V
VJ
2.43T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current
mA
0.1
mA
VJ
0.5T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
1.2 µC
18 A
130 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
R
R
thJC
thermal resistance junction to case
1.6 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
35
2
35
35
25
25
27
27
27
600
900
400
600
I
CM
1.85
R
thCH
thermal resistance case to heatsink
0.65
K/W
0.55
R
thCH
thermal resistance case to heatsink
K/W
Brake IGBT
Brake Diode
600 V
80
80
80
80
nA
V = V
CEK
1200
IXYS reserves the right to change limits, conditions and dimensions. 20151102dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
VUB72-12NOXT
Ratings
Part Number (Typ)
yywwA
Date Code Prod. Index
Lot No.:
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)
Package
T
op
°C
M
D
Nm2.5
mounting torque
2
T
VJ
°C150
virtual junction temperature
-40
Weight g37
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
100 A
per terminal
125-40
terminal to terminal
V1-A-Pack
Similar Part Package Voltage class
VUB72-16NOXT V1-A-Pack 1600
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
0 50 100 150
0
1000
2000
3000
4000
5000
6000
700
0
R
[]
Typ. NTC resistance vs. temperature
T
C
[°C]
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUB72-12NOXT 510734Blister 24VUB72-12NOXTStandard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.79
mΩ
V
0 max
R
0 max
slope resistance *
6.5
1.1
40
1.16
43
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier Brake
IGBT
Brake
Diode
150 °C
* on die level
T = 25°
resistance
kΩ
2.27
K
VJ
3560
R
25
B
25/50
2.22.13
temperature coefficient
Symbol
Definition
typ.
max.
min.
Conditions
Unit
Temperature Sensor NTC
IXYS reserves the right to change limits, conditions and dimensions. 20151102dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
VUB72-12NOXT
Remarks / Bemerkungen:
1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm
2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c
3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad
4. Detail X
:
EJOT PT® self-tapping screws (dimension K25) to be recommended for mounting on PCB
selbstschneidende Schraube (Größe K25) empfohlen für die PCB-Montage
T
ake care on the maximum screw length according to board thickness and the maximum hole depth of 6 mm
Bei der Wahl der Schraubenlänge die PCB-Dicke und die maximale Lochtiefe von 6mm beachten
Recommended mounting torque: 1.5 Nm / Empfohlenes Drehmoment: 1.5 Nm
38
1
2
4
5
7
9
10
6
6
52 (see 1)
5,5
25
25,75
5,5
15
12,2
1x45°
±0,3
11,75 ±0,3
0,5
*11
= =
*14 *7 *14*7*0
*14 *7 *14*7*0
25
25,75 ±0,3
*11
*0
Ø 0,8
*
11,75 ±0,3
Marking on product
Aufdruck der Typenbezeichnung
26
31,6
0,5
2
+0,2
3,6 ±0,5
Ø 0,5
15,8
±1
8,3 ±0,1
1
±0,2
2
+0,2
35
63
13
17
R2
max. 0,25
±0,25
4,6
5
±1
±1
Ø 6,1
Ø 2,5
1,5
Ø 2,1
4
6
9~
6
7~
1~
10
4
5
2
NTC
11 12
Outlines V1-A-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20151102dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
VUB72-12NOXT
011
400
800
1200
1600
2000
V
F
[V]
I
F
[A]
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
20
40
60
80
100
10
-3
10
-2
10
-1
10
0
200
300
400
5
0
0
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 25 50 75 100 125 150 1750 4 8 12 16 20 24 28 32
0
8
16
24
32
0 25 50 75 100 125 150
0
20
40
60
80
100
I
FSM
[A]
t [s] t [ms]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t [ms]
Constants for Z
thJC
calculation:
i R
th
(K/W) t
i
(s)
1 0.0607 0.0004
2 0.1230 0.00256
3 0.2305 0.0045
4 0.4230 0.0242
5 0.2628 0.1800
0.8 x V
RRM
50 Hz
T
VJ
= 45°C
V
R
= 0 V
R
thJA
:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
T
VJ
= 25°C
T
VJ
= 150°C T
VJ
= 150°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
F
i
g.
6
Transie
n
t
therma
l
im
p
edance
j
uncti
o
n
to
cas
e
vs.
time
per
d
i
od
e
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 45°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20151102dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
VUB72-12NOXT
0 1 2 3
0
10
20
30
40
50
60
70
0 20 40 60 80
0
2
4
6
8
10
012345
0
10
20
30
40
50
60
7
0
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
10
20
30
40
50
60
7
0
0 20 40 60 80 100 120 140
0
5
10
15
20
13 V
20 40 60 80
3
4
5
6
E
[mJ]
E
on
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
VGE = 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy
versus collector current
E
off
Fig. 6 Typ. switching energy
versus gate resistance
R
G
[]
E
[mJ]
I
C
[A]
E
on
E
off
TVJ = 125°C
TVJ = 25°C
VGE = 15 V
TVJ = 125°C
TVJ = 125°C
TVJ = 25°C
I
C
= 35 A
V
CE
= 600 V
RG = 27
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
IC = 35 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
0.0001 0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
t[s]
Z
thJC
[K/W]
Fig.
7
T
y
p.
transie
n
t
therma
l
im
p
edanc
e
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20151102dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
VUB72-12NOXT
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
[°C]
200 600 10000 400 800
0
10
20
30
40
50
0001001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 1 2 3 4
0
5
10
15
20
25
30
35
40
I
RM
[A]
Q
rr
[μC]
I
F
[A]
V
F
[V] di
F
/dt [A/μs] di
F
/dt [A/μs]
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
r
versus di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus di
F
/dt
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
I
RM
Q
r
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 25°C
100°C
150°C
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 125°C
V
R
= 800 V
T
VJ
= 125°C
V
R
= 800 V
200 600 10000 400 800
100
120
140
160
180
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
V
FR
[V]
t
rr
[ns]
t
fr
[µs]
di
F
/dt [A/μs] -d i
F
/dt [A/μs]
Fig. 5 Typ. recovery time
t
rr
versus di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
t
fr
V
FR
T
VJ
= 125°C
V
R
= 800 V
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 125°C
I
F
= 15 A
V
R
= 800 V
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
t[s]
Z
thJC
[K/W]
Fig. 7 Transient thermal impedance junction to case
Brake Diode
IXYS reserves the right to change limits, conditions and dimensions. 20151102dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
