TISP4260F3D - Texas Instruments - Datasheet.Directory

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCTION DATA information is current as of

publication date. Products conform to specifications

per the terms of Texas Instruments standard warranty.

Production processing does not necessarily include

testing of all parameters.

MARCH 1994 - REVISED SEPTEMBER 1997

Designed and manufactured by Power

Innovations, Bedford, UK. under

private label for Texas Instruments.

●Ion-Implanted Breakdown Region

Precise and Stable Voltage

Low Voltage Overshoot under Surge

●Planar Passivated Junctions

Low Off-State Current<10µA

●Rated for International Surge Wave Shapes

●Surface Mount and Through-Hole Options

●UL Recognized, E132482

description

These high voltage symmetrical transient voltage

suppressor devices are designed to protect two

wire telecommunication applications against

transients caused by lightning strikes and ac

power lines. Offered in five voltage variants to

meet battery and protection requirements they

are guaranteed to suppress and withstand the

listed international lightning surges in both

polarities.

Transients are initially clipped by breakdown

clamping until the voltage rises to the breakover

DEVICEVDRM

V(BO)

‘4240F3 180 240

‘4260F3 200 260

‘4290F3 220 290

‘4320F3 240 320

‘4380F3 270 380

WAVE SHAPESTANDARDITSP

2/10 µsFCC Part 68 175

8/20 µsANSI C62.41 120

10/160 µsFCC Part 68 60

10/560 µsFCC Part 68 45

0.5/700 µsRLM 88 38

10/700 µsFTZ R12

VDE 0433

CCITT IX K17/K20

10/1000 µsREA PE-60 35

PACKAGEPART # SUFFIX

Small-outlineD

Small-outline taped

and reeledDR

Single-in-lineSL

level, which causes the device to crowbar. The

high crowbar holding current prevents dc latchup

as the current subsides.

These monolithic protection devices are

fabricated in ion-implanted planar structures to

ensure precise and matched breakover control

and are virtually transparent to the system in

normal operation

The small-outline 8-pin assignment has been

carefully chosen for the TISP series to maximise

the inter-pin clearance and creepage distances

which are used by standards (e.g. IEC950) to

establish voltage withstand ratings.

device symbol

MDXXAI

D PACKAGE

(TOP VIEW)

MD4XAA

Specified ratings require the connection

of pins 1, 2, 3 and 4 for the T terminal.

SL PACKAGE

(TOP VIEW)

MDXXAH

SD4XAL

Terminals T and R correspond to the

alternative line designators of A and B

SL PACKAGE

D PACKAGE

65 7 8

4 3 21

T T T T

R R R R

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

absolute maximum ratings

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

2. Initially the TISP must be in thermal equilibrium with 0°C<TJ<70°C. The surge may be repeated after the TISP returns to its initial

conditions.

3. Above 70°C, derate linearly to zero at 150°C lead temperature.

NOTE 4: Further details on capacitance are given in the Applications Information section.

RATINGSYMBOLVALUEUNIT

Repetitive peak off-state voltage (0°C < TJ < 70°C)

‘4240F3

‘4260F3

‘4290F3

‘4320F3

‘4380F3

VDRM

± 180

± 200

± 220

± 240

± 270

Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)

ITSPA

1/2µs(Gas tube differential transient, open-circuit voltage wave shape 1/2µs)350

2/10 µs(FCC Part 68, open-circuit voltage wave shape 2/10µs)175

8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50µs)120

10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160µs)60

5/200 µs(VDE 0433, open-circuit voltage wave shape 2kV, 10/700µs)50

0.2/310 µs(RLM 88, open-circuit voltage wave shape 1.5kV, 0.5/700µs)38

5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2kV, 10/700µs)50

5/310 µs(FTZ R12, open-circuit voltage wave shape 2kV, 10/700µs)50

10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560µs)45

10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000µs)35

Non-repetitive peak on-state current(see Notes 2 and 3)D PackageITSM4A rms

50 Hz,1sSL Package 6

Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value <38 AdiT/dt250 A/µs

Junction temperatureTJ-40 to +150°C

Storage temperature rangeTstg-40 to +150°C

electrical characteristics for the T and R terminals, TJ=25°C

PARAMETERTEST CONDITIONSTISP4240F3TISP4260F3UNIT

MINTYPMAXMINTYPMAX

IDRMRepetitive peak off-

state currentVD = ±VDRM, 0°C < TJ < 70°C±10±10 µA

V(BO)Breakover voltagedv/dt=±250V/ms,RSOURCE=300 Ω±240±260V

V(BO)Impulse breakover volt-

age dv/dt=±1000V/µs,RSOURCE=50 Ω,

di/dt<20 A/µs±267±287V

I(BO)Breakover currentdv/dt=±250V/ms,RSOURCE=300 Ω±0.15±0.6±0.15±0.6A

VTOn-state voltageIT= ±5A,tW=100 µs±3±3V

IHHolding currentdi/dt=+/-30mA/ms±0.15±0.15A

dv/dtCritical rate of rise of

off-state voltageLinear voltage ramp

Maximum ramp value<0.85V(BR)MIN±5±5kV/µs

IDOff-state currentVD=±50V±10±10 µA

CoffOff-state capacitancef=100 kHz,Vd=100 mV

(see Note 4)

VD=0,57 95 57 95 pF

VD=-5V26 45 26 45 pF

VD=-50V11 20 11 20 pF

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

NOTE 5: Further details on capacitance are given in the Applications Information section.

NOTE 6: Further details on capacitance are given in the Applications Information section.

electrical characteristics for the T and R terminals, TJ=25°C

PARAMETERTEST CONDITIONSTISP4290F3TISP4320F3UNIT

MINTYPMAXMINTYPMAX

IDRMRepetitive peak off-

state currentVD = ±VDRM, 0°C < TJ < 70°C±10±10 µA

V(BO)Breakover voltagedv/dt=±250V/ms,RSOURCE=300 Ω±290±320V

V(BO)Impulse breakover volt-

age dv/dt=±1000V/µs,RSOURCE=50 Ω,

di/dt<20 A/µs±317±347V

I(BO)Breakover currentdv/dt=±250V/ms,RSOURCE=300 Ω±0.15±0.6±0.15±0.6A

VTOn-state voltageIT= ±5A,tW=100 µs±3±3V

IHHolding currentdi/dt=+/-30mA/ms±0.15±0.15A

dv/dtCritical rate of rise of

off-state voltageLinear voltage ramp

Maximum ramp value<0.85V(BR)MIN±5±5kV/µs

IDOff-state currentVD=±50V±10±10 µA

CoffOff-state capacitancef=100 kHz,Vd=100 mV

(see Note 5)

VD=0,57 95 57 95 pF

VD=-5V26 45 26 45 pF

VD=-50V11 20 11 20 pF

electrical characteristics for the T and R terminals, TJ=25°C

PARAMETERTEST CONDITIONSTISP4380F3UNIT

MINTYPMAX

IDRMRepetitive peak off-

state currentVD = ±VDRM, 0°C < TJ < 70°C±10 µA

V(BO)Breakover voltagedv/dt=±250V/ms,RSOURCE=300 Ω±380V

V(BO)Impulse breakover volt-

age dv/dt=±1000V/µs,RSOURCE=50 Ω,

di/dt<20 A/µs±407V

I(BO)Breakover currentdv/dt=±250V/ms,RSOURCE=300 Ω±0.15±0.6A

VTOn-state voltageIT= ±5A,tW=100 µs±3V

IHHolding currentdi/dt=+/-30mA/ms±0.15A

dv/dtCritical rate of rise of

off-state voltageLinear voltage ramp

Maximum ramp value<0.85V(BR)MIN±5kV/µs

IDOff-state currentVD=±50V±10 µA

CoffOff-state capacitancef=100 kHz,Vd=100 mV

(see Note 6)

VD=0,57 95 pF

VD=-5V26 45 pF

VD=-50V11 20 pF

thermal characteristics

PARAMETERTEST CONDITIONSMINTYPMAXUNIT

RθJAJunction to free air thermal resistancePtot=0.8W,TA=25°C

5cm2, FR4 PCBD Package160°C/W

SL Package105

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

PARAMETER MEASUREMENT INFORMATION

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

TYPICAL CHARACTERISTICS

R and T terminals

Figure 2. Figure 3.

Figure 4. Figure 5.

OFF-STATE CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

ID - Off-State Current - µA

0·001

0·01

0·1

100 TC3HAF

VD = -50 V

VD = 50 V

JUNCTION TEMPERATURE

NORMALISED BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakdown Voltages

0.9

1.0

1.1

1.2

TC3HAI

JUNCTION TEMPERATURE

V(BO)

V(BR)

V(BR)M

Positive Polarity

Normalised to V(BR)

I(BR) = 100 µA and 25°C

NORMALISED BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakdown Voltages

0.9

1.0

1.1

1.2

TC3HAJ

JUNCTION TEMPERATURE

V(BO)

V(BR)

V(BR)M

Negative Polarity

Normalised to V(BR)

I(BR) = 100 µA and 25°C

ON-STATE CURRENT

VT - On-State Voltage - V

2 3 4 5 6 7 8 91 10

IT - On-State Current - A

100 TC3HAL

ON-STATE VOLTAGE

-40°C

150°C25°C

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

TYPICAL CHARACTERISTICS

R and T terminals

Figure 6. Figure 7.

Figure 8. Figure 9.

HOLDING CURRENT & BREAKOVER CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

IH, I(BO) - Holding Current, Breakover Current - A

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.1

1.0TC3HAH

JUNCTION TEMPERATURE

I(BO)

NORMALISED BREAKOVER VOLTAGE

di/dt - Rate of Rise of Principle Current - A/µs

0·001 0·01 0·1 1 10 100

Normalised Breakover Voltage

1.0

1.1

1.2

1.3TC3HAB

Positive

RATE OF RISE OF PRINCIPLE CURRENT

Negative

OFF-STATE CAPACITANCE

Terminal Voltage - V

0·1 1 10

Off-State Capacitance - pF

100 TC3HAE

TERMINAL VOLTAGE

Positive Bias

Negative Bias

OFF-STATE CAPACITANCE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Off-State Capacitance - pF

100

TC3HAD

JUNCTION TEMPERATURE

500

Terminal Bias = 0

Terminal Bias = 50 V

Terminal Bias = -50 V

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

THERMAL INFORMATION

TYPICAL CHARACTERISTICS

R and T terminals

Figure 10.

Figure 11. Figure 12.

SURGE CURRENT

Decay Time - µs

10 100 1000

Maximum Surge Current - A

100

1000 TC3HAA

DECAY TIME

MAXIMUM NON-RECURRING 50 Hz CURRENT

t - Current Duration - s

0·1 1 10 100 1000

ITRMS - Maximum Non-Recurrent 50 Hz Current - A

CURRENT DURATION

D Package

TI4HAA

SL Package

VGEN = 350 Vrms

RGEN = 20 to 250 ΩΩ

THERMAL RESPONSE

t - Power Pulse Duration - s

0·0001 0·001 0·01 0·1 1 10 100 1000

Zθ

θJΑ

Α - Transient Thermal Impedance - °C/W

100

D Package

SL Package

TI3MAC

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

APPLICATIONS INFORMATION

electrical characteristics

The electrical characteristics of a TISP are strongly dependent on junction temperature, TJ. Hence a

characteristic value will depend on the junction temperature at the instant of measurement. The values given

in this data sheet were measured on commercial testers, which generally minimise the temperature rise

caused by testing. Application values may be calculated from the parameters’ temperature curves, the power

dissipated and the thermal response curve (Zθ).

lightning surge

wave shape notation

Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an

exponential rise and an exponential decay. Wave shapes are classified in terms of peak amplitude (voltage

or current), rise time and a decay time to 50% of the maximum amplitude. The notation used for the wave

shape is amplitude, risetime/decay time. A 50A,5/310µs wave shape would have a peak current value of

50 A, a rise time of 5µs and a decay time of 310µs. The TISP surge current graph comprehends the wave

shapes of commonly used surges.

generators

There are three categories of surge generator type, single wave shape, combination wave shape and circuit

defined. Single wave shape generators have essentially the same wave shape for the open circuit voltage

and short circuit current (e.g. 10/1000µs open circuit voltage and short circuit current). Combination

generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current

(e.g. 1.2/50µs open circuit voltage and 8/20µs short circuit current) Circuit specified generators usually

equate to a combination generator, although typically only the open circuit voltage waveshape is referenced

(e.g. a 10/700µs open circuit voltage generator typically produces a 5/310µs short circuit current). If the

combination or circuit defined generators operate into a finite resistance the wave shape produced is

intermediate between the open circuit and short circuit values.

current rating

When the TISP switches into the on-state it has a very low impedance. As a result, although the surge wave

shape may be defined in terms of open circuit voltage, it is the current wave shape that must be used to

assess the required TISP surge capability. As an example, the CCITT IX K17 1.5kV, 10/700µs surge is

changed to a 38A, 5/310µs waveshape when driving into a short circuit. Thus the TISP surge current

capability, when directly connected to the generator, will be found for the CCITTIXK17 waveform at 310µs

on the surge graph and not 700µs. Some common short circuit equivalents are tabulated below:

Any series resistance in the protected equipment will reduce the peak circuit current to less than the

generators’ short circuit value. A 2kV open circuit voltage, 50A short circuit current generator has an

effective output impedance of 40Ω (2000/50). If the equipment has a series resistance of 25Ω then the

surge current requirement of the TISP becomes 31A (2000/65) and not 50A.

STANDARDOPEN CIRCUIT

VOLTAGESHORT CIRCUIT

CURRENT

CCITT IX K171.5kV, 10/700µs38 A, 5/310µs

CCITT IX K20 1 kV, 10/700µs25 A, 5/310µs

RLM881.5kV, 0.5/700µs38 A, 0.2/310µs

VDE 04332.0kV, 10/700µs50 A, 5/200µs

FTZ R122.0kV, 10/700µs50 A, 5/310µs

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

protection voltage

The protection voltage, (V(BO)), increases under lightning surge conditions due to thyristor regeneration.

This increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its

breakdown region. The V(BO) value under surge conditions can be estimated by multiplying the 50Hz rate

V(BO)(250V/ms) value by the normalised increase at the surge’s di/dt (Figure 7.) . An estimate of the di/dt

can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.

As an example, the CCITT IX K17 1.5 kV, 10/700µs surge has an average dv/dt of 150V/µs, but, as the rise

is exponential, the initial dv/dt is higher, being in the region of 450V/µs. The instantaneous generator output

resistance is 25Ω. If the equipment has an additional series resistance of 20Ω, the total series resistance

becomes 45Ω. The maximum di/dt then can be estimated as 450/45=10 A/µs. In practice the

measureddi/dt and protection voltage increase will be lower due to inductive effects and the finite slope

resistance of the TISP breakdown region.

capacitance

off-state capacitance

The off-state capacitance of a TISP is sensitive to junction temperature, TJ, and the bias voltage, comprising

of the dc voltage, VD, and the ac voltage, Vd. All the capacitance values in this data sheet are measured

with an ac voltage of 100mV. The typical 25°C variation of capacitance value with ac bias is shown in Figure

13 When VD>> Vd the capacitance value is independent on the value of Vd. The capacitance is essentially

constant over the range of normal telecommunication frequencies.

Figure 13.

APPLICATIONS INFORMATION

NORMALISED CAPACITANCE

Vd - RMS AC Test Voltage - mV

1 10 100 1000

Normalised Capacitance

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05 AIXXAA

Normalised to Vd = 100 mV

DC Bias, VD = 0

RMS AC TEST VOLTAGE

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

D008

plastic small-outline package

This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

MECHANICAL DATA

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

SL002

2-pin plastic single-in-line package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly

MECHANICAL DATA

TISP4240F3, TISP4260F3, TISP4290F3, TISP4320F3, TISP4380F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

IMPORTANT NOTICE

Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or

service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing

orders, that the information being relied on is current.

TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in

accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems

necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those

mandated by government requirements.

Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or

environmental damage (“Critical Applications”).

TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE

FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS.

Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such

applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be

directed to TI through a local SC sales office.

In order to minimize risks associated with the customer's applications, adequate design and operating safeguards should be

provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents

or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any

patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination,

machine, or process in which such semiconductor products or services might be or are used.