MMBD1501/A / 1503/A / 1504/A / 1505/A
MMBD1500 series, Rev. B2
Small Signal Diodes
MMBD1501/A / 1503/A / 1504/A / 1505/A
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
MARKING
MMBD1501 1 1 MMBD1501A A11
MMBD1503 13 MMBD1503A A13
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD Power Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Symbol
Parameter
Value
Units
VRRM Maximum Repetitive Reverse Voltage 200 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperature 150 °C
12
3
11
3
1
2
SOT-23
Connection Diagrams
1501 1503
1504 1505
11
3
21
2
2
3
3
3
1
Symbol
Parameter Test Conditions Min
Max
Units
VR Breakdown Voltage IR = 5.0 µA 200 V
VF Forward Voltage IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
620
720
800
830
0.87
0.90
720
830
890
930
1.1
1.15
mV
mV
mV
mV
V
V
IR Reverse Current VR = 125 V
VR = 125 V, TA = 150°C
VR = 180 V
VR = 180 V, TA = 150°C
1.0
3.0
10
5.0
nA
µA
nA
µA
CT Total Capacitance VR = 0, f = 1.0 MHz 4.0 PF
2NC
MMBD1501/A / 1503/A / 1504/A / 1505/A
MMBD1500 series, Rev. B2
Typical Characteristics
Small Signal Diode
(continued)
250
275
300
325
3 5 10 2 0 30 50 1 00
Ta= 25 C
R everse Voltage, V
R
[V ]
R e v ers e C u rren t, I
R
[u A] 0
1
2
3
130 150 170 190 205
Ta= 25 C
Reverse Current, I
R
[n A ]
Reverse Voltage, VR [V ]
Figure 1. Reverse V oltage vs Reverse Current
BV - 3.0 to 100 uA Figure 2. Reverse Current vs Reverse V oltage
IR - 130 - 250 Volts
Figure 3. Forward V oltage vs Forward Current
VF - 1 to 100 uA Figure 4. Forward Roltage vs Forwad Current
VF - 0.1 to 10 mA
Figure 5. Forward V oltage vs Forward Current
VF - 10 to 800 mA Figure 6. T otal Capacitance vs Reverse V oltage
VR - 0 to 15 V
350
400
450
500
550
1 2 3 5 10 20 30 50 10 0
Ta= 25 C
Forward Voltage, V
F [V]
Forward Current, IF [uA] 500
550
600
650
700
750
800
0.1 0 .2 0.3 0.5 1 2 3 5 1 0
Ta= 25 C
Forward Voltage, V
F
[mV ]
Forward C urrent, IF [mA]
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
10 2 0 30 5 0 100 2 0 0 300 5 00
Ta= 25 C
Forward Voltage, V
F
[V]
Forw ard C urren t, IF [mA ] 02468101214
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta= 25 C
Total Cap acitance [pF]
Reverse Voltage [V]
°°
°
°
°°
MMBD1501/A / 1503/A / 1504/A / 1505/A
MMBD1500 series, Rev. B2
Typical Characteristics (continued)
Small Signal Diode
(continued)
Figure 8. Power Derating Curve
Figure 7. Average Rectified Current (IF(AV))
versus Ambient Temperature (TA)
050100150
0
100
200
300
400
I
F(AV)
- AVERAGE RECTIFIED CURRENT - mA
Current [mA]
Ambient Temperature, TA [ C ] 0 50 100 150 200
0
100
200
300
400
500
DO-35 Pkg
SOT-23 Pkg
Pow e r D issipation, P
D
[mW]
Average Temperature, IO [ C ]
°°
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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FASTr™
FRFET™
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