ee November 1995 FAIRCHILD es SEMICONDUCTOR m 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel! enhancement mode field effect transistors = High density cell design for low Rocio); are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch DMOS technology. These products have been designed to 9 9 ten. minimize on-state resistance while provide rugged, reliable, and Rugged and reliable. fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. = High saturation current capability. G s TO-92 SOT-23 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings T, = 25C unless otherwise noted Symbol | Parameter 2N7000 2N7002 NDS7002A | Units Voss Drain-Source Voltage 60 Vv Voce Drain-Gate Voltage (R,, < 1MQ) 60 Vv Voss Gate-Source Voltage - Continuous +20 Vv - Non Repetitive (tp < 50s) +40 1, Maximum Drain Current - Continuous 200 115 280 mA - Pulsed 500 800 1500 Py Maximum Power Dissipation 400 200 300 mw Derated above 25C 3.2 1.6 24 mW/"C TT :6 Operating and Storage Temperature Range -55 to 150 -65 to 150 Cc T, Maximum Lead Temperature for Soldering 300 c Purposes, 1/16" from Case for 10 Seconds THERMAL CHARACTERISTICS Rea Thermal Resistance, Junction-to-Ambient 312.5 625 417 CAN 5-95 2N7000.SAM Rev. A1 V200ZSGN/C00ZNZ/O00ZNZ2N7000/2N7002/NDS7002A Electrical Characteristics (1, = 25C unless otherwise noted) Symbol | Parameter Conditions | Type | Min | Typ [ Max | Units OFF CHARACTERISTICS BV oss Drain-Source Breakdown Voltage [V,,=0V,1,=10pA All 60 Vv loss Zero Gate Voltage Drain Current [| V,, = 48 V, V.g=0V 2N7000 1 HA T,=125C 1 mA T,=125C 0.5 mA lgsse Gate - Body Leakage, Forward Vos = 15 V, Vp, = OV 2N7000 10 nA Ves = 20 V, Vo5 = 9V 2N7002 100 | nA NDS7002A lesser Gate - Body Leakage, Reverse Veg =-15 V, Vag = OV 2N7000 -10 nA Veg = -20 V, Vag = OV 2N7002 -100 | nA NDS7002A ON CHARACTERISTICS (note 1) Vesey Gate Threshold Voltage Vos = Veg: Ip = 1 mA 2N7000 0.8 2.1 3 Vv Vos = Veg: Ip = 250 UA Nar ORoA 1 21 | 2.5 Rosiony Static Drain-Source On-Resistance |V,, = 10 V, |, = 500 mA 2N7000 1.2 Q T,=125C 1.9 Veg = 4.5 V, |, = 75 mA 18 ) 53 Veg = 10 V, I, = 500 mA 2N7002 12 | 75 T, =100C 1.7 | 13.5 Veg = 5.0 V, |, = 50 mA 1.7 | 75 T, =100C 24 | 13.5 Veg = 10 V, |, = 500 mA NDS7002A 12 2 T, =125C 2 3.5 Ves = 5.0 V, |, = 50 mA 17 T, =125C 2.8 Vosiom Drain-Source On-Voltage Vog = 10 V, 1, = 500 mA 2N7000 06 | 25 Vv Veg =4.5V, |p = 75 mA 0.14 | 0.4 Veg = 10 V, 1, = 500mA 2N7002 06 | 3.75 Veg = 5.0 V, |, = 50 mA 0.09 | 1.5 Veg = 10V, |, = 500mMA NDS7002A 0.6 4 Vog = 5.0-V, ty = 50 mA 0.09 | 0.15 5-96 2N7000.SAM Rev. A1Electrical Characteristics (1, 25C unless otherwise noted) > Symbol | Parameter Conditions Type | Min | Typ | Max | Units a ON CHARACTERISTICS Continued (note 1) So leson, On-State Drain Current Veg = 4.5 V, Vos = 10 V 2N7000 75 | 600 mA S Vos = 10 V, Vog 2 2 Vosion 2N7002 | 500 | 2700 > Veg =10V, Vos 2 2 Vosiom NDS7002A | 500 | 2700 Ps Ges Forward Transconductance Vo = 10 V, |, = 200 mA 2N7000 | 100 | 320 mS =] Vos 2 2 Vosiony Ip = 200 mA 2N7002 80 | 320 S Vos 2 2 Vosiony lp = 200 mA NDS7002A) 80 | 320 Oo DYNAMIC CHARACTERISTICS Y Ci. Input Capacitance Vog = 25V, Veg = OV, All 20 50 pF oS Coe Output Capacitance f= 1.0 MHz All 1 25 pF 8 Cis Reverse Transfer Capacitance All 4 5 pF > ton Turn-On Time Von = 15: V, R, = 25Q, 2N7000 10 ns |, = 500 MA, Vag = 10 V, Roen = 25 Vop = 30-V, R, = 150 Q, 2N700 20 |) = 200 MA, Vgq = 10 V, NDS7002A Roe = 262 ton Turn-Off Time Von = 15 V, R, = 250, 2N7000 10 ns 1, = 500 mA, V,, = 10 V, Roe = 25 Voo = 30 V, R, = 150 Q, 2N700 20 > = 200 MA, Veg = 40 V, NDS7002A Reey = 25 Q DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Drain-Source Diode Forward Current 2N7002 115 | mA NDS7002A 280 lou Maximum Pulsed Drain-Source Diode Forward Current 2N7002 0.8 A NDS7002A 15 Ven Drain-Source Diode Forward Veg = OV, 1,= 115 MA (note 1) 2N7002 0.88 | 1.5 Vv Voltage Veg 20 V, 1, = 400 mA (note 1) NDS7002A 0.88 | 1.2 se uise Test: Pulse Width < 300us, Duty Cycle < 2.0%. 5-97 2N7000.SAM Rev. A12N7000/2N7002/NDS7002A Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A a Rogion) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1p ORAIN-SOURCE CURRENT (A} on 0 1 2 3 4 5 9 0.4 0.8 1.2 1.6 2 Vos: DRAIN-SOURCE VOLTAGE () 'p . DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current Ww 175 w 2.5 QO 2 g ar ag Ni 3 1.5 N@ 2 3 a9 Za zw zz ze 9 0 1.25 6815 =u 2 w Ze #9 25 1 gs BO BS 1 aon a nD Zz 3 0.75 2 : g 0.8 04: 0 -50 25 0 25 50 75 100 125180 0 0.4 08 12 1.6 2 y, JUNCTION TEMPERATURE ('C} 1p, DRAIN CURRENT (A) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain withTemperature Current and Temperature Vag = 10V Be fast ts os Sf 125C | 1.2 Vj Vana J ~ Vth, NORMALIZED ly . DRAIN CURRENT (A) GATE-SOURCE THRESHOLD VOLTAGE 0 2 4 6 8 10 50-25 a 25 50 75 100 125 150 Vos: GATE TO SOURCE VOLTAGE (V) Ty , JUNCTION TEMPERATURE (C) Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. 5-98 2N7000.SAM Rev. A1Typical Electrical Characteristics (continued) 2N7000 / 2N7002 /NDS7002A BV ogg , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 0.975 0.95 0.925 t- -50 100 125 25 0 25 50 75 T , JUNCTION TEMPERATURE (C) Figure 7. Breakdown Voltage Variation withTemperature. CAPACITANCE (pF) f=1MHz Veg = OV 1 2 3 5 10 20 30 Vpg - ORAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics 150 50 Figure 11. Switching Test Circuit. 0.04 0.005 I, , REVERSE DRAIN CURRENT (A) 0.001 0.2 0.4 Vsp 06 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V} 1.4 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Vg = 25V 280mA Vig GATE-SOURCE VOLTAGE (V) \ 115mA 0 0.4 08 12 Qq . GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. nl tott *] t avon) 1 tt 90% Output, Vout 10% 90% Inverted Input, Vin L50% 50% 10% ~Pulse Width Figure 12. Switching Waveforms. 5-99 2N7000.SAM Rev. A1 Vc200ZSGN/C00ZNZ/000ZNZ2N7000/2N7002/NDS7002A Typical Electrical Characteristics (continued) = < SS = 0.5 = ao" z G xe x 3 Q O41 z gt 0.05 a Vig = 10V 2 SINGLE PULSE T, = 28C 0.01 .008 1 2 5 10 20 30 60 80 Vos. DRAIN-SOURCE VOLTAGE (V) Figure 13. 2N7000 Maximum Safe Operating Area. 3 2 of 1 =z08 = os = Zz ud re x > oO Ot Zz ft 0.05 a Vgg = 10V 2 SINGLE PULSE T, 225C 0.01 a 0.005, 1 2 10 20 30 Vps. DRAIN-SOURCE VOLTAGE (V} Figure 15. NDS7000A Maximum Safe Operating Area. 60 80 2 wi r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE o Singie Pulse 2 0.0001 0.003 0.01 ip. DRAIN CURRENT (A) Vag = 10 SINGLE PULSE Ty = 28C 2 10 20 30 60 80 Vpg , DRAIN-SOURCE VOLTAGE (V} Figure 14. 01 1 t,, TIME (sec) Figure 16. TO-92,2N7000 Transient Thermal Response Curve. o ooo 2 oe eo a u ip 0.01 2 2 Single r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.002 0.001 0.0001 0.001 0.01 0.1 4 t,, TIME (sec) 2N7002 Maximum Safe Operating Area. Roa Oa * Roa Roa = (See Datasheet) 1 _ i | P(pk) |= bee ty i; | = =|, _ Ty Ty =P * Raya Duty Cycle, D=t, 10 100 300 Rega = rth * Raa Roua = (See Datasheet) | Pipk) I ta ts me ' me toe Ty-Ty =P Raa (t) Duty Cycle, D=t, /t 10 100 300 Figure 17. SOT-23, 2N7002 /NDS7002A Transient Thermal Response Curve. 5-100 2N7000.SAM Rev. A1