Semiconductor Components Industries, LLC, 1999
March, 2000 – Rev. 1 1Publication Order Number:
2N6344/D
2N6344, 2N6349
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full–wave silicon gate controlled solid–state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in all Four Quadrants
For 400 Hz Operation, Consult Factory
Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
*Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +110°C, Sine Wave 50 to
60 Hz, Gate Open) 2N6344
2N6349
VDRM,
VRRM 600
800
Volts
*On–State RMS Current
(TC = +80°C)
Full Cycle Sine W ave 50 to 60 Hz
(TC = +90°C)
IT(RMS) 8.0
4.0
Amps
*Peak Non–Repetitive Surge Current
(One Full Cycle, Sine W ave 60 Hz,
TC = +25°C)
Preceded and followed by rated current
ITSM 100 Amps
Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2s
*Peak Gate Power
(TC = +80°C, Pulse Width = 2 µs) PGM 20 Watts
*Average Gate Power
(TC = +80°C, t = 8.3 ms) PG(AV) 0.5 Watt
*Peak Gate Current
(TC = +80°C, Pulse Width = 2.0 µs) IGM 2.0 Amps
*Peak Gate Voltage
(TC = +80°C, Pulse Width = 2.0 µs) VGM 10 Volts
*Operating Junction Temperature Range TJ40 to
+125 °C
*Storage Temperature Range Tstg 40 to
+150 °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
Device Package Shipping
ORDERING INFORMATION
2N6344 TO220AB 500/Box
2N6349 TO220AB
TO–220AB
CASE 221A
STYLE 4
123
4
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4Main Terminal 2
http://onsemi.com
500/Box
MT1
G
MT2
Preferred devices are recommended choices for future use
and best overall value.
2N6344, 2N6349
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction to Case RθJC 2.2 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = 100°C
IDRM,
IRRM
10
2.0 µA
mA
ON CHARACTERISTICS
*Peak On–State Voltage
(ITM =
"
11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
p
2%) VTM 1.3 1.55 Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) TC = –40°C
*MT2(+), G(–); MT2(–), G(+) TC = –40°C
IGT
12
12
20
35
50
75
50
75
100
125
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) TC = –40°C
*MT2(+), G(–); MT2(–), G(+) TC = –40°C
VGT
0.9
0.9
1.1
1.4
2.0
2.5
2.0
2.5
2.5
3.0
Volts
Gate Non–Trigger Voltage (Continuous dc)
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 100°C)
*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(–)
VGD
0.2
Volts
*Holding Current
(VD = 12 Vdc, Gate Open) TC = 25°C
(Initiating Current =
"
200 mA) *TC = –40°C
IH
6.0
40
75
mA
*Turn-On Time
(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA,
Rise T ime = 0.1 µs, Pulse Width = 2 µs)
tgt 1.5 2.0 µs
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms,
Gate Unenergized, TC = 80°C)
dv/dt(c) 5.0 V/µs
*Indicates JEDEC Registered Data.
2N6344, 2N6349
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3
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 – VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(–) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(–) MT2
REF
MT1
(–) IGT
GATE
(–) MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT + IGT
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
2N6344, 2N6349
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4
80
84
88
96
100
8.06.05.04.03.02.01.0 IT(RMS), RMS ON-STATE CURRENT, (AMP)
0
T , CASE TEMPERATURE ( C)°
C
α = CONDUCTION ANGLE
α
α
α = 30°
60°90°
120°180°
dc
92
7.0
Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation
1
2
3
QUADRANTS
QUADRANT 4
–60 20
–20 0 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
0.4 –40
0.6
0.8
1.0
1.2
1
1.4
1.6
1.8 50
30
20
10
7.0
5.0 140120100806040200–20–40–60 TJ, JUNCTION TEMPERATURE (°C)
OFF-STATE VOLTAGE = 12 V
2
3
4
V , GATE TRIGGER VOLTAGE (VOLTS)
QUADRANT
gt
I , GATE TRIGGER CURRENT (mA)
GT
OFF-STATE VOLTAGE = 12 V
Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current
2.0
00IT(RMS), RMS ON-STATE CURRENT (AMP)
4.0
8.0
6.0
10
1.0 2.0 3.0 4.0 6.0 7.0 8.0
TJ
[
100°C60°
α = 180°
120°
90°
P , A VERAGE POWER (WATTS)
AV
5.0
α = CONDUCTION ANGLE
α
α
dc
30°
2N6344, 2N6349
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5
TJ = 100°C
f = 60 Hz
1.0
02.0 3.0 5.0 7.0 10
NUMBER OF CYCLES
20
40
60
CYCLE
80
100
TJ = 100°C
0.5
0.7
1.0
0.1
25°C
vTM, INSTANT ANEOUS ON-STA TE VOLTAGE (VOLTS)
–40
0.80.4 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
0.2
0.3
–60 –20 200 40 10080 140
TJ, JUNCTION TEMPERATURE (°C) 12060
MAIN TERMINAL #2
POSITIVE
2.0
20
10
7.0
5.0
3.0
3.0
5.0
7.0
10
2.0
20
30
50
100
70 GATE OPEN
MAIN TERMINAL #1
POSITIVE
i , INSTANT ANEOUS ON-STATE CURRENT (AMP)
TM
ITSM I , HOLDING CURRENT (mA)
H
Surge is preceded and followed by rated current
, PEAK SURGE CURRENT (AMP)
Figure 5. On–State Characteristics
Figure 6. Typical Holding Current
Figure 7. Maximum Non–Repetitive
Surge Current
2.0 k 10 k20 5.0 k1.0 k500200100505.02.01.00.50.2
ZθJC(t) = r(t) RθJC
0.02
0.05
0.2
0.1
0.5
1.0
t,TIME (ms)
0.1
0.01
r
(t),
TRA
N
SI
EN
T
T
HE
RMA
L
R
E
SISTA
NCE
(
NO
RMA
L
IZ
ED
)
Figure 8. Typical Thermal Response
2N6344, 2N6349
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6
PACKAGE DIMENSIONS
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
TO–220AB
CASE 221A–07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 ––– 1.15 –––
Z––– 0.080 ––– 2.04
A
K
L
V
GD
N
Z
H
Q
FB
123
4
–T– SEATING
PLANE
S
R
J
U
TC
2N6344, 2N6349
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7
Notes
2N6344, 2N6349
http://onsemi.com
8
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