IRF830, SiHF830 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Dynamic dV/dt rating * Repetitive avalanche rated * Fast switching 500 RDS(on) () VGS = 10 V 1.5 Qg max. (nC) 38 Qgs (nC) 5.0 Qgd (nC) Available * Ease of paralleling * Simple drive requirements * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 22 Configuration Available Single D Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. TO-220AB G DESCRIPTION G D S Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF830PbF Lead (Pb)-free SiHF830-E3 IRF830 SnPb SiHF830 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS 20 VGS at 10 V Continuous Drain Current TC = 25 C TC = 100 C Pulsed Drain Current a ID IDM Linear Derating Factor Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation TC = 25 C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d Mounting Torque for 10 s 6-32 or M3 screw UNIT V 4.5 2.9 A 18 0.59 W/C EAS 280 mJ IAR 4.5 A EAR 7.4 mJ PD 74 W dV/dt 3.5 V/ns TJ, Tstg -55 to +150 300 C 10 lbf * in 1.1 N*m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12). c. ISD 4.5 A, dI/dt 75 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. S16-0754-Rev. C, 02-May-16 Document Number: 91063 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF830, SiHF830 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 A 500 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.61 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 C - - 250 A - - 1.5 gfs VDS = 50 V, ID = 2.7 A b 2.5 - - S Input Capacitance Ciss 610 - Coss - 160 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - Output Capacitance - 68 - Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = 2.7 A b VGS = 10 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time - - 38 - - 5.0 Qgd - - 22 td(on) - 8.2 - tr - 16 - - 42 - - 16 - - 4.5 - - 7.5 - 0.5 - 2.7 - - 4.5 - - 18 td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS Gate Input Resistance Rg VGS = 10 V ID = 3.1 A, VDS = 400 V, see fig. 6 and 13 b VDD = 250 V, ID = 3.1 A Rg = 12 , RD = 79, see fig. 10 b Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S f = 1 MHz, open drain Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = 4.5 A, VGS = 0 V b TJ = 25 C, IF = 3.1 A, dI/dt = 100 A/s b - - 1.6 V - 320 640 ns - 1.0 2.0 C Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. S16-0754-Rev. C, 02-May-16 Document Number: 91063 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF830, SiHF830 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 100 4.5 V 20 s Pulse Width TC = 25 C 10-1 100 101 VDS, Drain-to-Source Voltage (V) 91063_01 Fig. 1 - Typical Output Characteristics, TC = 25 C ID, Drain Current (A) 2.5 ID = 3.1 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 Fig. 4 - Normalized On-Resistance vs. Temperature VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Top 100 1250 4.5 V 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) 1500 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 3.0 91063_04 Capacitance (pF) ID, Drain Current (A) Top RDS(on), Drain-to-Source On Resistance (Normalized) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 1000 Ciss 750 500 Coss 250 20 s Pulse Width TC = 150 C 10-1 100 100 VDS, Drain-to-Source Voltage (V) 91063_02 Crss 0 101 VDS, Drain-to-Source Voltage (V) 91063_05 Fig. 2 - Typical Output Characteristics, TC = 150 C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage ID, Drain Current (A) 150 C 25 C 100 10-1 20 s Pulse Width VDS = 50 V VGS, Gate-to-Source Voltage (V) 20 101 101 ID = 3.1 A VDS = 400 V 16 VDS = 250 V 12 VDS = 100 V 8 4 For test circuit see figure 13 0 4 91063_03 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S16-0754-Rev. C, 02-May-16 10 0 91063_06 8 16 24 32 40 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage Document Number: 91063 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF830, SiHF830 www.vishay.com Vishay Siliconix 5.0 ISD, Reverse Drain Current (A) 101 ID, Drain Current (A) 150 C 25 C 100 4.0 3.0 2.0 1.0 VGS = 0 V 0.0 0.4 0.6 0.8 1.2 1.0 25 VSD, Source-to-Drain Voltage (V) 91063_07 100 125 150 Fig. 9 - Maximum Drain Current vs. Case Temperature RD 102 VDS Operation in this area limited by RDS(on) 5 VGS 2 ID, Drain Current (A) 75 TC, Case Temperature (C) 91063_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage 50 10 s 10 5 D.U.T. RG + - VDD 100 s 2 1 ms 1 5 10 V Pulse width 1 s Duty factor 0.1 % 10 ms 2 0.1 Fig. 10a - Switching Time Test Circuit 5 TC = 25 C TJ = 150 C Single Pulse 2 10-2 0.1 2 5 1 2 5 10 2 5 102 VDS 2 5 103 2 5 90 % 104 VDS, Drain-to-Source Voltage (V) 91063_08 Fig. 8 - Maximum Safe Operating Area 10 % VGS td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 0.1 PDM 0.1 0.05 10-2 10-5 91063_11 t1 Single Pulse (Thermal Response) 0.02 0.01 10-4 10-3 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 0.1 1 10 t1, Rectangular Pulse Duration (S) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0754-Rev. C, 02-May-16 Document Number: 91063 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF830, SiHF830 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS V(BR)DSS VDS tp VDD D.U.T RG + - IAS V DD VDS A 10 V 0.01 tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 600 ID 2.0 A 2.8 A Bottom 4.5 A Top 500 400 300 200 100 0 VDD = 50 V 25 91063_12c 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG 10 V 12 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform S16-0754-Rev. C, 02-May-16 Fig. 13b - Gate Charge Test Circuit Document Number: 91063 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF830, SiHF830 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + + - - Rg * * * * dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91063. S16-0754-Rev. C, 02-May-16 Document Number: 91063 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F OP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 OP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note * M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi'an Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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