SK 260MAR10 Absolute Maximum Ratings Symbol Conditions MOSFET /"" /2"" 4 4' - .+ ,( - .+ *1 ,5 0 8 0 5 - .+ *1 ,5 0 ; Values Units 011 3.1 .61 0*1 9:1 6:1 / / 7 7 <91===>0+1 , .61 0*1 9:1 6:1 7 7 <91===>0+1 , Inverse diode (R) SEMITOP 3 Mosfet Module 4? - < 4 4?' - < 4' - .+ *1 ,5 8 0 5 - .+ *1 ,5 ; Freewheeling CAL diode 4? - < 4 - *1 , ; SK 260MAR10 Preliminary Data Features ! " Typical Applications # 1) $ $ %&" ' & ( ( *+, / ( 01 7+1A( 0 0 Characteristics Symbol Conditions MOSFET /2" - 1 /( 4 - 1(D+ 7 /2" - /"5 4 - 1(D+ 7 /2" - 1 /5 /" - /""5 ; - .+ 0.+ , /2" - .1/ 5/" - 1 / 4 - 611 75 /2" - 01 /5 ; - .+ , C" 4 - 611 75 /2" - 01 /5 '"?H I /2" - 1 /5 /" - .+ /5 - 0 'A ; - 0.+ , 7 , < 91 === > 0.+ .:1 , , .+11 B 6111 / - .+ ,( min. /C"" /2" 4"" 42"" C" @+ <91===>0.+ E /"" .(+ typ. max. Units 011 +11 011 .(+ / / F7 7 G 9(+ G 6(6 6(+ ? .D(: .(@ ? ? .(* ? #" I / - +1 /5 /2" - 01 /5 4 - *+ 7 C2 - 6(6 G C ;< 901 9+1 09@1 961 '"?H 1(9+ JBK Inverse diode /" 4? - 611 75 /2" - 1 /5 4CC' L I 4? - 611 75 $; - ,5 C2 - G 7 F /C - 75 B ; - .+ , 1(D: / - 7BF Free-wheeling diode /? 4? - 0+1 75 /2" - 1 / 0(9+ 4CC' L I 4? - 0+1 75 $; - 0.+ , @1 @(@ / - 611 75 B 0(D / 7 F - <*11 7BF Mechanical data '0 M .(+ 61 "H'4 &O 6 N 90 MAR 1 11-04-2005 RAM (c) by SEMIKRON SK 260MAR10 Fig. 3 Output characteristic, tp = 80 s, Tj = 25 C Fig. 5 Breakdown voltage vs. temperature Fig. 6 Typ. capacitancies vs. drain-source voltage Fig. 7 Gate charge characteristic, IDp = 300 A Fig. 8 Diode forward characteristic, tp = 80 s 2 11-04-2005 RAM (c) by SEMIKRON SK 260MAR10 Dimensions in mm "%22H" H #H47'H HC ?C H "#HC &4N" 7N H '%N 4N2 &4N" 4N H &I . 90 '7C This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 11-04-2005 RAM (c) by SEMIKRON