2N3053A - Motorola / Freescale Semiconductor

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistors

NPN Silicon

MAXIMUM RATINGS

Rating Symbol 2N3053 2N3053A Unit

Collector–Emitter Voltage(1) VCEO 40 60 Vdc

Collector–Base Voltage VCBO 60 80 Vdc

Emitter–Base Voltage VEBO 5.0 Vdc

Collector Current — Continuous IC700 mAdc

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD5.0

28.6 Watts

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –65 to +200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

JC 35 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 100 µAdc, IB = 0) 2N3053

2N3053A

V(BR)CEO 40

60 —

—

Vdc

Collector–Emitter Breakdown Voltage(2)

(IC = 100 mAdc, RBE = 10 Ω) 2N3053

2N3053A

V(BR)CER 50

70 —

—

Vdc

Collector–Base Breakdown Voltage

(IC = 100

Adc, IE = 0) 2N3053

2N3053A

V(BR)CBO 60

80 —

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 100

Adc, IC = 0) V(BR)EBO 5.0 — Vdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB(off) = 1.5 Vdc) 2N3053

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N3053A

ICEX — 0.25 µAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0) 2N3053 IEBO — 0.25 µAdc

Base Cutoff Current 2N3053

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N3053A IBL — 0.25 µAdc

1. Applicable 0 to 100 mA (Pulsed):

1. Pulse Width ≤ 300 µsec., Duty Cycle ≤ 2.0%.

1. 0 to 700 mA; Pulse Width ≤ 10 µsec., Duty Cycle ≤ 2.0%.

2. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

2N3053

2N3053A

CASE 79–04, STYLE 1

TO–39 (TO–205AD)

 Motorola, Inc. 1996

COLLECTOR

BASE

EMITTER

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2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(2)

DC Current Gain

(IC = 150 mAdc, VCE = 2.5 Vdc)

(IC = 150 mAdc, VCE = 10 Vdc)

hFE 25

50 —

250

—

Collector–Emitter Saturation V oltage

(IC = 150 mAdc, IB = 15 mAdc) 2N3053

2N3053A

VCE(sat) —

—1.4

0.3

Vdc

Base–Emitter Saturation V oltage

(IC = 150 mAdc, IB = 15 mAdc) 2N3053

2N3053A

VBE(sat) —

0.6 1.7

1.0

Vdc

Base–Emitter On Voltage

(IC = 150 mAdc, VCE = 2.5 Vdc) 2N3053

2N3053A

VBE(on) —

—1.7

1.0

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) fT100 — MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 15 pF

Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 80 pF

2. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

1.0

0.1

0.5

1000100101.00.5 IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

ORMALI

D D

RRE

C, CAPACITANCE (pF)

101.00.1

100

1.0

5.0

VR, REVERSE VOLTAGE (V)

Figure 2. Capacitance

1.4

1.2

1.0

0.8

0.6

0.4

0.2

01000100101.00.1 IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

V, VOLTAGE (VOLTS)

Cob

Cib

TJ = 150°C

TJ = 25°C

TJ = –55°C

VBE(on) for VCE = 1.0 V

VBE(sat) IC

VCE(sat) IC

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

TEM

ERAT

COEFFICIE

)°θ

hfe, CURRENT GAIN

1.6

0.8

–0.8

–1.6

100050101.00.5 IC, COLLECTOR CURRENT (mA)

Figure 4. Temperature Coefficients

100 500 0

2.0

4.0

6.0

101.00.1 100

f, FREQUENCY (kHz)

Figure 5. Frequency Effects

8.0

6.0

4.0

2.0

00.1 1.0 10 100 1000

RS, SOURCE RESISTANCE (k OHMS)

Figure 6. Source Resistance Effects

100

0.1 1.0 10

IC, COLLECTOR CURRENT (mAdc)

Figure 7. Current Gain Bandwidth Product

versus Collector Current — 1.0 kHz hfe

NF, NOISE FIGURE (dB)

OISE

)

RS = 4.3 kΩ

IC = 10 µA

Re = 1.0 kΩ

IC = 100 µA

f = 1.0 kHz

VCE = 10 V

TA = 25°C

IC = 100 µA

IC = 10 µA

+25°C to +150°C

(–55°C to 25°C)

θVC for VCE(sat)

–55°C to +25°C

+25°C to +150°C

θVBB for VBE

fτ(MHz)

1000

200

1.0 0.1 1.0 10 100

IC, COLLECTOR CURRENT (mAdc)

Figure 8. Current Gain — Bandwidth Product

0.01

0.1

1.0 10 100

VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 9. Active Region Safe Operating Area

VCE = 20 V

IC, COLLECTOR CURRENT (A)

500 µs

1.0 ms5.0 ms

dc TO–39 dc TO–18

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4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 079–04

(TO–205AD)

ISSUE N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION J MEASURED FROM DIMENSION A

MAXIMUM.

4. DIMENSION B SHALL NOT VARY MORE THAN

0.25 (0.010) IN ZONE R. THIS ZONE

CONTROLLED FOR AUTOMATIC HANDLING.

5. DIMENSION F APPLIES BETWEEN DIMENSION

P AND L. DIMENSION D APPLIES BETWEEN

DIMENSION L AND K MINIMUM. LEAD

DIAMETER IS UNCONTROLLED IN DIMENSION

P AND BEYOND DIMENSION K MINIMUM.

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

SEATING

PLANE

D3 PL

–T–

–A–

–H–

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.335 0.370 8.51 9.39

B0.305 0.335 7.75 8.50

C0.240 0.260 6.10 6.60

D0.016 0.021 0.41 0.53

E0.009 0.041 0.23 1.04

F0.016 0.019 0.41 0.48

G0.200 BSC 5.08 BSC

H0.028 0.034 0.72 0.86

J0.029 0.045 0.74 1.14

K0.500 0.750 12.70 19.05

L0.250 ––– 6.35 –––

M45 BSC 45 BSC

P––– 0.050 ––– 1.27

R0.100 ––– 2.54 –––

0.36 (0.014) H M

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2N3053/D

*2N3053/D*

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