Bridge Diode Single In-line Package OUTLINE D25XB Unit : mm Weight : 7.1g typ. Package5S 800V 25A Control No. Type No. 4.6 Date code 30 * SIP * UL E142422 * * IFSM * D25XB 60 0264 20 - + - Feature * * * * * 17.5 Thin-SIP UL E142422 Large Io High VoltageLarge IFSM High Thermal Radiation Web 'PSEFUBJMTPGPVUMJOFEJNFOTJPOT SFGFSUPPVSXFCTJUFPSUIF4FNJDPOEVDUPS 4IPSU'PSN$BUBMPH"TGPSUIFNBSLJOH SFGFSUPUIFTQFDJaDBUJPOi.BSLJOH 5FSNJOBM$POOFDUJPOu RATINGS Absolute Maximum Ratings Tc=25unless otherwise speci Symbol Conditions Item Storage Temperature Operation Junction Temperature Maximum Reverse Voltage Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque Forward Voltage Reverse Current -40150 Tj 150 IO IFSM 2 It Vdis TOR VF IR jl ja 90 J534 200 Tc = 98 50Hz With heatsink 50Hz sine wave, Resistance load Without heatsink Ta = 25 50Hz Tj = 25 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 1mst10msTj = 25 per diode AC Terminals to Case, AC 1 minute 0.5 Nm Recommended torque : 0.5 Nm 600 800 25 IF = 12.5A, Pulse measurement, per diode VR = VRM, Pulse measurement, per diode Junction to Case, With heatsink Junction to Lead, Without heatsink Junction to Ambient, Without heatsink V A 3.5 350 A 300 A2s 2.5 kV 0.8 Nm Electrical Characteristics Tc=25unless otherwise speci jc Thermal Resistance Unit Tstg VRM Average Rectified Forward Current Type No. D25XB20 D25XB60 D25XB80 MAX 1.05 MAX 10 MAX 1 MAX 5 MAX 22 V A /W Thin SIP UL Bridge D25XB CHARACTERISTIC DIAGRAMS Sine wave 50Hz )[TJOFXBWFJTVTFEGPSNFBTVSFNFOUT Typical 4FNJDPOEVDUPSQSPEVDUTHFOFSBMMZIBWFDIBSBDUFSSJTUJDWBSJBUJPO 5ZQJDBMJTBTUBUJTUJDBMBWFSBHFPGUIFEFWJDFhTBCJMJUZ J534 91