PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF es D) ml 8235605 G004337 3 SIEG,. ~33-/7 U4 * - 2&_9433T DBn 436 BD 138 BD 140 For AF driver and output stages of medium performance BD 136, BD 138, and BD 140 are epitaxial PNP silicon planar transistors in TO 126 plastic package (12 A 3 DIN 41869, sheet 4). The collector is electrically connected to the metallic mounting area. Together with BD 135, BD 137, and BD 139 as complementary pairs the transistros BD 136, BD 138, and BD 140 are designed for use in driver stages of high performance AF amplifiers. Ordering code Type Type | Ordering code BD 136 Q62702-D107 Mica washer Q62902-B62 BD 136-6 Q62702-D107-V1 Spring washer Q62902-B63 BD 136-10 Q62702-D107-V2. A3DIN 137 BD 136-16 Q62702-D107-V3 BD 136 paired Q62702-D107-P BD 138 Q62702-D109 BD 138-6 Q62702-D109-V1 BD 138-10 Q62702-D109-V2 BD 138 paired 0Q62702-D109-P BD 140 Q62702-D111 te BD 140-6 Q62702-D111-V1 { EFT a BD 140-10 Q62702-D111-V2 ~ BD 140 paired Q62702-D111-P hp BD 136/135 compl. paired BD 138/137 compl. paired BD 140/139 compl. paired Maximum ratings Collector-emitter voltage (Reg S$ 1 kQ) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector peak current Collector current Base current Junction temperature Storage temperature range Total power dissipation (Tease= Therma! resistance Junction to ambient air ,Juction to case bottom g 1760 6-05 0Q62702-D139-S1 0Q62702-D140-S1 Q62702-D141-S1 Approx. weight 0.5 g Dimensions in mm Transistor fixing with M 3 scraw. Starting torque max 0.8 Nm. Below the screw head, a washer or spring washer should be used. 1) If a 50 u mica washer (ungreased) is used, the tharmal resistance increases by 8 K/W and In case of a greased one by 4 K/W. BD136 | BD138 | BD 140 ~Vcen | - - 100 Vv ~Vego | 45 60 - Vv -Veeo 45 60 80 Vv -Vego | 5 5 5 Vv -Iem | -2.0 2.0 2.0 A -Ic 1,5 1,5 1,5 A -Ig 0.2 0.2 0.2 A Tj 150 150 150 C Teta -5 to +125 C 25C) Prot 12.5 | 12.5 12.5 Ww Rina, | $110 | $110 | 110 KW Rinsc') | S10 $10 $10 K/W 383 | t Ae compete an at Tak OS TA ae hte A ithe VANINNMOON AHL ABAL C a leh as f arabioa ie vodee ide rida 8BC D ml 8235605 poo4a3a MESIEG ob ore Ry wrsseu SIEMENS AKTIENGESELLSCHAF TFET "BD 136 BD 138 Static characteristics (Tamp = 25C) The transistors BD 136, BD 138, and BD 140 are grouped according to the DC current gain hee and marked by numerals of the German DIN standard. BD 140 hee group 6 10 16 Type BD 136 BD 136 BD 136 BD 136 . BD 138 BD 138 - BD 138 BD 140 BD 140 - BD 140 -Ic hee fre hee Vee (mA) IcfIp IofIp IofIn (Vv) 5 >25 >25 >256 - 150 63 (40 to 100) 100 (63 to 160) | 160 (100 to 250) | 500 ->25 >25 >25 1.2 Static characteristics (Tz,,) = 25C) BD 136 | BD138 | BD 140 Collector-emitter-saturation vaitage (J = 500 mA; Ig = 500 mA) Voesat <0.5 >0.6 <0.5 Vv Collector cutoff current (-Veg = 30 V) ~-lego <100 <100 <100 nA Collector cutoff current (Veg = 30 V; Tamp = 125C) lcgo $10 10 $10 pA Emitter cutoff current (-Veg = 5 V) ~lego $10 S10 $10 pA Collector-emitter breakdown voltage (Jcgq = 50 mA) Viarjceo | >45 >60 >80 Vv Condition for matching pairs heen (-I = 150 mA; Vceg = 2 V) hee2 81.41 41.41 $1.41 | - Dynamic characteristics (Tan, = 25C) Transition frequency (~J = 50 mA; Voee = 10 V; f = 100 MHz) ag >75 >75 >75 MHz 384 1761 6-06 ah wi ie cued 2 quceuta wabiaamtn ee nme OR lt net enna id aaa WA Sak we Ye pee seen aif hee wie tad 1 cMelotatee ath seals meen a a at Uapepe Cir eee =e esc Dd ma 6235605 0004339 7 MNSIEG, 7-93-/9 wot" 04557 0 BD 136 STEMENS AKTIENGESELLSCHAF BD 138 Total parm. power dissipation versus temperature Prot =f (11; Rtn = parameter W 8D136, 6D 138, BO 140 14 Fat 12 10 8 6 4 2 0 - 50 0 50 100 150C | Permissible operating range Ig = fee); (Tease = 60C); = 0 A BD 136, BO 138, BD 140 10 5 W 160 60 2g 0 12,5 19! 5 610?y Veg 1762 G-07 Ahic BD 140 Permissible pulse load 4 tac = f (0; v= parameter W BD 136, 8D 138, BD 140 no 5 10 5 eo we 0 t's Collector current fo =f (Vee) Vee = 2 V; Tams = parameter (common emitter configuration) BD136, BD 138, BD 140 bw aes senna Hit ae atte, fete eee235605 OOO4340 3 MMSIEG | _ 28 > - . eau 04340 . 5 75S 17 oo BD 136 BD 138 SIEMENS AKTIENGESELLSCHAF BD 140 OC current gain hee =f (Ic) Callactor cutoff t temp Voce = 2 V: Tamp = parameter Icpo = f (Tema) 3 BD 136-10, BD 138-10, 8D 140-10 nA 8D 136, BD 138, BD 140 10 5 hee { 10 hea 10! 5 io 0 1 2 4 i 10 10 {0 0 10mA Tan I, Collector-antitter saturation voltage Base-emitter saturation voltage Voesat = f (Uc) Voesat = f Uc} hee = 10; Tampy = parameter hee = 10; Tamp = parameter (common emitter configuration) {common emitter configuration} 80136, BD 138, 8D140 mA 8D136, BD 138, BD 140 a 5 % t 0 5 10 5 oo Average =~ Scattering fi 5 aan de 1 0 02 O04 O86 O08 0 wtyV 0 Vest Vest= 25C >) mm a235b05 00043 uy 5 M@ESIEG |. Te GS-/77 75 04341 0 BD 136 SIEMENS AKTIENGESELLSCHAF BD 138 Output characteristics Jc = f (Vee) Ig = parameter BD 136, BD 138, BD 140 S S28 hk 3s 6 5S B8a ss Output characteristics Ic = f (Vce) Jg = parameter A BD 136, BD 138, BD 140 k 0 0 0 30 40V >Vg 1764 6-09 BD 140 Output characteristics Ic = f {Vce} Ig = parameter 8D 136, BD 138, BD 140 Transition frequency fy = f (Jc) Vee = 10V Hz BD 136, BD 138, BD 140 108 v 0 6 10! 5 102 6 10%maA lh F 387 hig we AAT moa aerated abpladinne iano pans abe ots Peta (ml RCL ARE AL ey ET