HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. * >100kHz Operation at 390V, 20A * 200kHz Operation at 390V, 12A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC * Low Conduction Loss This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. * Temperature Compensating SABERTM Model www.intersil.com Formerly Developmental Type TA49339. Packaging * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards JEDEC TO-220AB ALTERNATE VERSION Ordering Information PART NUMBER PACKAGE BRAND HGTP20N60A4 TO-220AB 20N60A4 HGTG20N60A4 TO-247 20N60A4 COLLECTOR (FLANGE) E NOTE: When ordering, use the entire part number. C G Symbol C JEDEC STYLE TO-247 E C G G E COLLECTOR (FLANGE) FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 (c)2001 Fairchild Semiconductor Corporation HGTG20N60A4, HGTP20N60A4 Rev. B http://store.iiic.cc/ HGTG20N60A4, HGTP20N60A4 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60A4, HGTP20N60A4 UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 70 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 40 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 280 A Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES 20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM 30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 290 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - - V Collector to Emitter Breakdown Voltage BVCES IC = 250A, VGE = 0V 600 Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V Collector to Emitter Leakage Current ICES VCE = 600V 15 - - V TJ = 25oC - - 250 A TJ = 125oC - - 2.0 mA TJ = 25oC TJ = 125oC - 1.8 2.7 V Collector to Emitter Saturation Voltage VCE(SAT) IC = 20A, VGE = 15V Gate to Emitter Threshold Voltage VGE(TH) IC = 250A, VCE = 600V Gate to Emitter Leakage Current IGES - 1.6 2.0 V 4.5 5.5 7.0 V - - 250 nA 100 - - A - 8.6 - V VGE = 15V - 142 162 nC VGE = 20V - 182 210 nC - 15 - ns - 12 - ns - 73 - ns - 32 - ns - 105 - J VGE = 20V Switching SOA SSOA TJ = 150oC, RG = 3, VGE = 15V L = 100H, VCE = 600V Gate to Emitter Plateau Voltage VGEP IC = 20A, VCE = 300V On-State Gate Charge Qg(ON) IC = 20A, VCE = 300V Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC ICE = 20A VCE = 390V VGE =15V RG = 3 L = 500H Test Circuit (Figure 20) Current Rise Time Current Turn-Off Delay Time Current Fall Time trI td(OFF)I tfI Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 280 350 J Turn-Off Energy (Note 2) EOFF - 150 200 J (c)2001 Fairchild Semiconductor Corporation HGTG20N60A4, HGTP20N60A4 Rev. B http://store.iiic.cc/ HGTG20N60A4, HGTP20N60A4 Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time TEST CONDITIONS td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time MIN TYP MAX UNITS - 15 21 ns IGBT and Diode at TJ = 125oC ICE = 20A VCE = 390V VGE = 15V RG = 3 tfI L = 500H Test Circuit (Figure 20) - 13 18 ns - 105 135 ns - 55 73 ns - 115 - J J Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 510 600 Turn-Off Energy (Note 2) EOFF - 330 500 J 0.43 oC/W Thermal Resistance Junction To Case RJC - - NOTES: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. Unless Otherwise Specified VGE = 15V DIE CAPABILITY 80 PACKAGE LIMIT 60 40 20 0 25 50 75 100 125 150 120 TJ = 150oC, RG = 3, VGE = 15V, L = 100H 100 80 60 40 20 0 0 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA fMAX, OPERATING FREQUENCY (kHz) 500 TC VGE 75oC 15V 300 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.43oC/W, SEE NOTES TJ = 125oC, RG = 3, L = 500H, V CE = 390V 40 5 10 20 30 40 50 tSC , SHORT CIRCUIT WITHSTAND TIME (s) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 700 100 200 300 400 500 600 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TC , CASE TEMPERATURE (oC) 14 450 VCE = 390V, RG = 3, TJ = 125oC 12 400 ISC 10 350 8 300 6 250 4 200 tSC 2 0 150 10 11 12 13 14 15 100 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 100 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE , GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG20N60A4, HGTP20N60A4 Rev. B http://store.iiic.cc/ HGTG20N60A4, HGTP20N60A4 100 Unless Otherwise Specified (Continued) DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250s 80 60 40 TJ = 125oC 20 0 TJ = 25oC TJ = 150oC 0 0.4 1.6 2.0 2.4 2.8 0.8 1.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.2 TJ = 125oC, VGE = 12V, VGE = 15V 800 600 400 0 80 60 40 TJ = 125oC 20 0 TJ = 25oC, VGE = 12V, VGE = 15V 0 0.4 1.2 1.6 2.0 2.4 2.8 RG = 3, L = 500H, VCE = 390V 700 600 500 TJ = 125oC, VGE = 12V OR 15V 400 300 200 TJ = 25oC, VGE = 12V OR 15V 100 10 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 40 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 36 22 RG = 3, L = 500H, VCE = 390V RG = 3, L = 500H, VCE = 390V 20 32 trI , RISE TIME (ns) TJ = 25oC, TJ = 125oC, VGE = 12V 18 16 14 12 TJ = 25oC, TJ = 125oC, VGE = 12V 28 24 20 16 12 TJ = 25oC, TJ = 125oC, VGE = 15V 10 8 0.8 TJ = 25oC 0 5 FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT td(ON)I, TURN-ON DELAY TIME (ns) TJ = 150oC FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE EOFF, TURN-OFF ENERGY LOSS (J) EON2 , TURN-ON ENERGY LOSS (J) 1200 200 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 800 RG = 3, L = 500H, VCE = 390V 1000 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1400 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves TJ = 25oC OR TJ = 125oC, VGE = 15V 8 4 5 10 15 20 25 30 35 5 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation HGTG20N60A4, HGTP20N60A4 Rev. B http://store.iiic.cc/ HGTG20N60A4, HGTP20N60A4 Typical Performance Curves Unless Otherwise Specified (Continued) 80 RG = 3, L = 500H, VCE = 390V RG = 3, L = 500H, VCE = 390V 72 110 VGE = 12V, VGE = 15V, TJ = 125oC 64 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 120 100 90 80 VGE = 12V, VGE = 15V, TJ = 25oC TJ = 125oC, VGE = 12V OR 15V 56 48 TJ = 25oC, VGE = 12V OR 15V 40 32 70 24 60 5 10 15 20 25 30 35 16 40 5 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 16 240 DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250s 160 120 TJ = 25oC 80 TJ = 125oC TJ = -55oC 40 0 6 7 8 9 10 11 12 VCE = 600V 10 0.8 ICE = 20A ICE = 10A 0.2 0 50 75 100 125 150 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ICE = 30A 1.0 25 VCE = 200V 6 4 2 0 20 40 60 80 100 120 140 160 TJ = 125oC, L = 500H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 10 ICE = 30A 1 ICE = 20A ICE = 10A 0.1 3 10 100 1000 RG, GATE RESISTANCE () TC , CASE TEMPERATURE (oC) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE VCE = 400V FIGURE 14. GATE CHARGE WAVEFORMS ETOTAL = EON2 + EOFF 0.4 40 QG , GATE CHARGE (nC) 1.4 0.6 35 8 0 12 RG = 3, L = 500H, VCE = 390V, VGE = 15V 1.2 30 IG(REF) = 1mA, RL = 15, TJ = 25oC FIGURE 13. TRANSFER CHARACTERISTIC 1.6 25 14 VGE, GATE TO EMITTER VOLTAGE (V) 1.8 20 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 200 15 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE (c)2001 Fairchild Semiconductor Corporation HGTG20N60A4, HGTP20N60A4 Rev. B http://store.iiic.cc/ HGTG20N60A4, HGTP20N60A4 Unless Otherwise Specified (Continued) 5 C, CAPACITANCE (nF) FREQUENCY = 1MHz 4 3 CIES 2 1 COES CRES 0 0 20 40 60 80 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Typical Performance Curves 2.2 DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250s, 2.1 2.0 ICE = 30A ICE = 20A 1.9 1.8 ICE = 10A 1.7 8 9 FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZJC , NORMALIZED THERMAL RESPONSE 10 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 100 0.5 0.2 10-1 0.1 t1 0.05 PD 0.02 0.01 10-2 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG20N60A4D DIODE TA49372 90% 10% VGE EON2 L = 500H EOFF VCE RG = 3 90% DUT + - VDD = 390V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGTG20N60A4, HGTP20N60A4 Rev. B http://store.iiic.cc/ HGTG20N60A4, HGTP20N60A4 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM . fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. E ON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. (c)2001 Fairchild Semiconductor Corporation HGTG20N60A4, HGTP20N60A4 Rev. B http://store.iiic.cc/ TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 http://store.iiic.cc/