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FDS6679 30 Volt P-Channel PowerTrench(R) MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. * -13 A, -30 V. RDS(ON) = 9 m @ VGS = -10 V RDS(ON) = 13 m @ VGS = - 4.5 V * Extended VGSS range (25V) for battery applications These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. * High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. * High power and current handling capability D D low RDS(ON) D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage 25 V ID Drain Current -13 A - Continuous (Note 1a) - Pulsed PD -50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1.0 -55 to +175 C (Note 1a) 50 C/W (Note 1) 25 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6679 FDS6679 13'' 12mm 2500 units (c)2005 Fairchild Semiconductor Corporation FDS6679 Rev C1 (W) FDS6679 March 2005 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = -250 A Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 A IGSS Gate-Body Leakage VGS = 25 V, VDS = 0 V 100 nA -3 V On Characteristics VGS(th) -30 ID = -250 A, Referenced to 25C V -23 mV/C (Note 2) VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C -1 -1.6 VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = -10 V, ID = -13 A ID = -11 A VGS = -4.5 V, VGS=-10 V, ID =-13 A, TJ=125C VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -13 A 44 S VDS = -15 V, f = 1.0 MHz V GS = 0 V, 3939 pF 972 pF 498 pF 5 7.3 10 9.5 mV/C 9 13 13 -50 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time (Note 2) VDD = -15 V, VGS = -10 V, ID = -1 A, RGEN = 6 19 34 ns 10 20 ns td(off) Turn-Off Delay Time 110 176 ns tf Turn-Off Fall Time 65 104 ns 71 100 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -15 V, VGS = -10 V ID = -13 A, nC 12 nC 15 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -2.1 A Voltage (Note 2) -0.7 -2.1 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W (10 sec) 62.5C/W steady state when mounted on a 1in2 pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS6679 Rev C1 (W) FDS6679 Electrical Characteristics FDS6679 Typical Characteristics 50 3 VGS = -10V -ID, DRAIN CURRENT (A) 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V -6.0V -3.5V -4.5V 30 -3.0V 20 10 -2.5V 0 VGS = -3.0V 2.6 2.2 1.8 -3.5V -4.0V -5.0V -6.0V -10V 1 0.6 0 0.5 1 1.5 2 0 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.04 ID = -13A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 ID = -7.0A 0.03 TA = 125oC 0.02 TA = 25oC 0.01 0 -50 -25 0 25 50 75 100 125 150 175 2 2.5 TJ, JUNCTION TEMPERATURE (oC) 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 -IS, REVERSE DRAIN CURRENT (A) VDS = -5.0V -ID, DRAIN CURRENT (A) -4.5V 1.4 40 30 20 TA = -125oC 10 25oC -55oC 0 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6679 Rev C1 (W) FDS6679 Typical Characteristics 6000 VDS = -5V ID = -13A -10V f = 1 MHz VGS = 0 V 5000 8 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 4000 3000 2000 COSS 1000 CRSS 0 0 0 10 20 30 40 50 60 70 80 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 20 25 30 50 RDS(ON) LIMIT 100s 1ms 10ms 10 100ms 1s 10s 1 DC VGS = -10V SINGLE PULSE RJA = 125oC/W o TA = 25 C 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RJA = 125C/W TA = 25C 40 30 20 10 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 100 0.1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) * RJA o RJA = 125 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6679 Rev C1 (W) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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