NTE5570, NTE5572, & NTE5574
Silicon Controlled Rectifier (SCR)
125 Amp, TO94
Electrical Characteristics: (Maximum values @ TJ = +125°C unless otherwise specified)
Repetitive Peak Voltages, VDRM & VRRM
NTE5570 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5572 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5574 1200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non−Repetitive Peak Reverse Blocking Voltage, VRSM
NTE5570 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5572 900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5574 1300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average On−State Current (Half Sine Wave, 180°, TC = +85°C), IT(AV) 80A. . . . . . . . . . . . . . . . . . . .
RMS On−State Current (DC @ TC = +75°C), IT(RMS) 125A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak One−Cycle, Non−Repetitive Surge Current (10ms Duration, Sinusoidal Half Wave), ITSM
No Voltage Reapplied 1900A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100% VRRM Reapplied 1600A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum I2t for Fusing (10ms Duration, Sinusoidal Half Wave), I2t
No Voltage Reapplied 18000A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100% VRRM Reapplied 12700A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Positive Gate Current (5ms Pulse Width), IGM 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Positive Gate Voltage (5ms Pulse Width), +VGM 20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Negative Gate Voltage (5ms Pulse Width), −VGM 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power (f = 50Hz, Duty Cycle = 50%), PG3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power (50ms Pulse Width), PGM 12W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Rate of Rise of Off−State Voltage (Exponential to 67% Rated VDRM), dv/dt 500V/μs. . . . . . . . . . . . .
Rate of Rise of ON−State Current, di/dt
(Gate Drive 20V, 65Ω, with tr = 0.5μs, Vd = Rated VDRM, ITM = 2 x di/dt snubber 0.2μF)
Non−Repetitive 300A/μs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Delay Time, td
(Gate Pulse: 10V, 15Ω Source, tp = 6μs, tr = 0.1μs, Vd = rated VDRM, ITM = 50A) 1μs. . . . . .
Typical Turn−On Time, tq
(ITM = 50A, di/dt = −5A/μs min, VR = 50V, dv/dt = 20V/μs, Gate Bias: 0V 25Ω, tp = 500μs) 110μs
On−State Voltage (IPk = 250A, 10ms Sine Pulse), VTM 1.6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Off−State Current (At VDRM), IDRM 15mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Current (At VRRM), IRRM 15mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Gate Current Required to Trigger, IGT
(6V Anode−to−Cathode Applied, TJ = +25°C) 120mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Gate Voltage Required to Trigger, VGT
(6V Anode−to−Cathode Applied, TJ = +25°C) 2.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Holding (Anode Supply 12V Resistive Load, TJ = +25°C), IH150mA. . . . . . . . . . . . . . . . .
Maximum Gate Voltage which will not Trigger any Device, VGD 0.25V. . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (Maximum values @ TJ = +125°C unless otherwise specified)
Operating Temperature Range, TJ−40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg −40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction−to−Case (DC Operation), RtnJC 0.3°C/W. . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Case−to−Heat Sink, RthC−HS
(Mounting Surface Smooth, Flat, and Greased) 0.1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ÇÇ
ÇÇ
ÇÇ
.280 (7.11)
Dia Max
Gate
(White)
2.500
(63.5)
Max
6.260
(159.0)
Max
(Terminal 3)
.500 (12.7) Max)
1/2−20 UNF
1.031 (26.18)
Dia Max
.875 (22.22) Dia
(Ceramic)
Cathode
Cathode
(Red)
Anode
.827
(27.0)
Max
1.227 (31.18) Max
(Across Corners)
For No. 6 Screw
Seating Plane
7.500
(190.5)
Max
(Terminals 1 & 2)
