ZPD8.2 - General Semiconductor, Inc.

FEATURES

♦Silicon Planar Zener Diodes

♦The Zener voltages are graded according to

the international E 12 standard. Smaller voltage

tolerances and other Zener voltages are available

upon request.

♦These diodes are also available in the Mini-MELF case

with the type designation ZMM1 … ZMM75.

MECHANICAL DATA

Case: DO-35 Glass Case

Weight: approx. 0.13 g

MAXIMUM RATINGS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOL VALUE UNIT

Zener Current (see Table “Characteristics”)

Power Dissipation at Tamb = 25°C Ptot 500(1) mW

Junction Temperature Tj175 °C

Storage Temperature Range TS– 55 to +175 °C

NOTES:

(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

ZPD1 THRU ZPD75

ZENER DIODES

min. 1.083 (27.5)

min. 1.083 (27.5) max. .150 (3.8)

max. ∅

Cathode

.020 (0.52)

Mark

max. ∅.079 (2.0)

DO-35

Dimensions are in inches and (millimeters)

1/20/99

SYMBOL MIN. TYP. MAX. UNIT

Thermal Resistance RthJA – – 0.3(1) °C/W

Junction to Ambient Air

NOTES:

(1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.

ZPD1 THRU ZPD75

ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Type

Zener Voltage(1)

IZ= 5 mA

VZ(V)

IZ= 5 mA

f = 1 kHz

rzj (Ω)

IZ= 1 mA

f = 1 kHz

rzj (Ω)

Temp. Coeff.

of Zener Voltage

IZ= 5 mA

αvz (10–4/K)

Reverse

Voltage

IR= 100 nA

VR(V)

Tamb = 45°C

IZ(mA)

Tamb = 25°C

IZ(mA)

Dynamic Resistance Admissible

Zener current(2)

ZPD1(3) 0.7 ... 0.8 6.5 (< 8) < 50 –26 ... –23 – 280 340

ZPD2.7 2.5 ... 2.9 75 (< 83) < 500 –9 ... –4 – 135 160

ZPD3 2.8 ... 3.2 80 (< 95) < 500 –9 ... –3 – 117 140

ZPD3.3 3.1 ... 3.5 80 (< 95) < 500 –8 ... –3 – 109 130

ZPD3.6 3.4 ... 3.8 80 (< 95) < 500 –8 ... –3 – 101 120

ZPD3.9 3.7 ... 4.1 80 (< 95) < 500 –7 ... –3 – 92 110

ZPD4.3 4.0 ... 4.6 80 (< 95) < 500 –6 ... –1 – 85 100

ZPD4.7 4.4 ... 5.0 70 (< 78) < 500 –5 ... +2 – 76 90

ZPD5.1 4.8 ... 5.4 30 (< 60) < 480 –3 ... +4 > 0.8 67 80

ZPD5.6 5.2 ... 6.0 10 (< 40) < 400 –2 ... +6 > 1 59 70

ZPD6.2 5.8 ... 6.6 4.8 (< 10) < 200 –1 ... +7 > 2 54 64

ZPD6.8 6.4 ... 7.2 4.5 (< 8) < 150 +2 ... +7 > 3 49 58

ZPD7.5 7.0 ... 7.9 4 (< 7) < 50 +3 ... +7 > 5 44 53

ZPD8.2 7.7 ... 8.7 4.5 (< 7) < 50 +4 ... +7 > 6 40 47

ZPD9.1 8.5 ... 9.6 4.8 (< 10) < 50 +5 ... +8 > 7 36 43

ZPD10 9.4 ... 10.6 5.2 (< 15) < 70 +5 ... +8 > 7.5 33 40

ZPD11 10.4 ... 11.6 6 (< 20) < 70 +5 ... +9 > 8.5 30 36

ZPD12 11.4 ... 12.7 7 (< 20) < 90 +6 ... +9 > 9 28 32

ZPD13 12.4 ... 14.1 9 (< 25) < 110 +7 ... +9 > 10 25 29

ZPD15 13.8 ... 15.6 11 (< 30) < 110 +7 ... +9 > 11 23 27

ZPD16 15.3 ... 17.1 13 (< 40) < 170 +8 ... +9.5 > 12 20 24

ZPD18 16.8 ... 19.1 18 (< 50) < 170 +8 ... +9.5 > 14 18 21

ZPD20 18.8 ... 21.2 20 (< 50) < 220 +8 ... +10 > 15 17 20

ZPD22 20.8 ... 23.3 25 (< 55) < 220 +8 ... +10 > 17 16 18

ZPD24 22.8 ... 25.6 28 (< 80) < 220 +8 ... +10 > 18 13 16

ZPD27 25.1 ... 28.9 30 (< 80) < 250 +8 ... +10 > 20 12 14

ZPD30 28 ... 32 35 (< 80) < 250 +8 ... +10 > 22.5 10 13

ZPD33 31 ... 35 40 (< 80) < 250 +8 ... +10 > 25 9 12

ZPD36 34 ... 38 40 (< 90) < 250 +8 ... +10 > 27 9 11

ZPD39 37 ... 41 50 (< 90) < 300 +10 ... +12 > 29 8 10

ZPD43 40 ... 46 60 (< 100) < 700 +10 ... +12 > 32 7 9.2

ZPD47 44 ... 50 70 (< 100) < 750 +10 ... +12 > 35 6 8.5

ZPD51 48 ... 54 70 (< 100) < 750 +10 ... +12 > 38 6 7.8

ZPD56 52.0 … 60.0(4) < 135(4) < 1000(5) typ. +10(4) –– –

ZPD62 58.0 … 66.0(4) < 150(4) < 1000(5) typ. +10(4) –– –

ZPD68 64.0 … 72.0(4) < 200(4) < 1000(5) typ. +10(4) –– –

ZPD75 70.0 … 79.0(4) < 250(4) < 1500(5) typ. +10(4) –– –

NOTES:

( 1) Tested with pulses tp= 5 ms

( 2) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature

(3) The ZPD1 is a silicon diode operated in forward direction. Hence, the subscript of all parameters should be “F” instead of “Z”.

Connect the cathode terminal to the negative pole

(4) at IZ= 2.5 mA

(5) at IZ= 0.5 mA