VISHAY
TDSG / O / Y51..
Document Number 83126
Rev. 1.5, 31-Aug-04
Vishay Semiconductors
www.vishay.com
1
19237
Pb
Pb-free
e4
Standard 7- Segment Display 13 mm
Description
The TDS.51.. series are 13 mm character seven seg-
ment LED displays in a very compact package.
The displays are designed for a viewing distance up
to 7 meters and available in four bright colors. The
grey package surface and the evenly lighted untinted
segments provide an optimum on-off contrast.
All displays are categorized in luminous intensity
groups. That allows users to assemble displays with
uniform appearence. Typical applications include
instruments, panel meters, point-of-sale terminals
and household equipment.
Features
• Evenly lighted segments
• Grey package surface
• Untinted segments
• Luminous intensity categorized
• Yellow and green categorized for color
• Wide viewing angle
• Suitable for DC and high peak current
• Lead-free device
Applications
Panel meters
Test- and measure- equipment
Point-of-sale terminals
Control units
TV sets
Parts Table
Part Color, Luminous Intensity Circuitry
TDSO5150 Orange red, IV > 700 µcd Common anode
TDSO5160 Orange red, IV > 700 µcd Common cathode
TDSY5150 Yellow, IV > 700 µcd Common anode
TDSY5160 Yellow, IV > 700 µcd Common cathode
TDSG5150 Green, IV > 700 µcd Common anode
TDSG5160 Green, IV > 700 µcd Common cathode
www.vishay.com
2
Document Number 83126
Rev. 1.5, 31-Aug-04
VISHAY
TDSG / O / Y51..
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TDSR515./TDSR516., TDSO515./TDSO516.,TDSY515./TDSY516.,TDSG515./TDSG516.
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Orange red
TDSO5150/5160
Note1) IVmin and IV groups are mean values of all segments (a to g, D1 to D4),
matching factor within segments is ≥ 0.5, excluding decimal points and colon.
Parameter Test condition Part Symbol Value Unit
Reverse voltage per segment or
DP
VR6V
DC forward current per segment
or DP
TDSO5150 IF25 mA
TDSO5160 IF25 mA
TDSY5150 IF25 mA
TDSY5160 IF25 mA
TDSG5150 IF25 mA
TDSG5160 IF25 mA
Surge forward current per
segment
or DP
tp ≤ 10 µs (non repetitive) TDSO5150 IFSM 0.15 A
TDSO5160 IFSM 0.15 A
TDSY5150 IFSM 0.15 A
TDSY5160 IFSM 0.15 A
TDSG5150 IFSM 0.15 A
TDSG5160 IFSM 0.15 A
Power dissipation Tamb ≤ 45°C PV550 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 85 °C
Soldering temperature t ≤ 3 sec, 2mm below seating
plane
Tsd 260 °C
Thermal resistance LED
junction/ambient
RthJA 100 K/W
Parameter Test condition Symbol Min Ty p. Max Unit
Luminous intensity per segment
(digit average) 1)
IF = 10 mA IV700 µcd
IV700 µcd
Dominant wavelength IF = 10 mA λd612 625 nm
Peak wavelength IF = 10 mA λp630 nm
Angle of half intensity IF = 10 mA ϕ±50 deg
Forward voltage per segment
or DP
IF = 20 mA VF23V
Reverse voltage per segment
or DP
IR = 10 µAV
R615 V
VISHAY
TDSG / O / Y51..
Document Number 83126
Rev. 1.5, 31-Aug-04
Vishay Semiconductors
www.vishay.com
3
Yellow
TDSY5150/5160
Note1) IVmin and IV groups are mean values of all segments (a to g, D1 to D4),
matching factor within segments is ≥ 0.5, excluding decimal points and colon.
Green
TDSG5150/5160
Note1) IVmin and IV groups are mean values of all segments (a to g, D1 to D4),
matching factor within segments is ≥ 0.5, excluding decimal points and colon.
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Typ. Max Unit
Luminous intensity per segment
(digit average) 1)
IF = 10 mA IV700 µcd
IV700 µcd
Dominant wavelength IF = 10 mA λd581 594 nm
Peak wavelength IF = 10 mA λp585 nm
Angle of half intensity IF = 10 mA ϕ±50 deg
Forward voltage per segment
or DP
IF = 20 mA VF2.4 3 V
Reverse voltage per segment
or DP
IR = 10 µAV
R615 V
Parameter Test condition Symbol Min Typ. Max Unit
Luminous intensity per segment
(digit average) 1)
IF = 10 mA IV700 µcd
IV700 µcd
Dominant wavelength IF = 10 mA λd562 575 nm
Peak wavelength IF = 10 mA λp565 nm
Angle of half intensity IF = 10 mA ϕ±50 deg
Forward voltage per segment
or DP
IF = 20 mA VF2.4 3 V
Reverse voltage per segment
or DP
IR = 10 µAV
R615 V
Figure 1. Power Dissipation vs. Ambient Temperature
0
200
400
600
800
1000
P - Power Dissipation ( mW )
V
100806040200
95 11481
T
amb
- Ambient Temperature ( °C)
Figure 2. Forward Current vs. Ambient Temperature
0
10
20
30
40
60
0204060 80
I - Forward Current ( mA )
F
T
amb
- Ambient Temperature ( °C)
100
17525
50
www.vishay.com
4
Document Number 83126
Rev. 1.5, 31-Aug-04
VISHAY
TDSG / O / Y51..
Vishay Semiconductors
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
0.4 0.2 0 0.2 0.4 0.6
95 10082
0.6
0.9
0.8
0°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
I - Relative Luminous Intensity
V rel
°
I - Forward Current ( mA )
F
0.1
1
10
100
1000
18794
VF- Forward V oltage(V)
Orange Red
tp/T = 0.001
tp=10µs
1086420
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
18795
Orange Red
I
F
=10mA
I - Relative Luminous Intensity
Vrel
Figure 6. Specific Luminous Intensity vs. Forward Current
Figure 7. Relative Luminous Intensity vs. Forward Current
Figure 8. Relative Intensity vs. Wavelength
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
18796
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
2.0
Orange Red
IFAV = 10 mA, const.
I - Specific Luminous Intensity
V rel
110
0.01
0.1
1
10
IF- Forward Current ( mA )
100
18797
Orange Red
I - Relative Luminous Intensity
V rel
590 610 630 650 670
0
0.2
0.4
0.6
0.8
1.2
690
17529
λ- W avelength ( nm )
1.0
Orange Red
I - Relative Intensity
rel
VISHAY
TDSG / O / Y51..
Document Number 83126
Rev. 1.5, 31-Aug-04
Vishay Semiconductors
www.vishay.com
5
Figure 9. Forward Current vs. Forward Voltage
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
Figure 11. Specific Luminous Intensity vs. Forward Current
0.1
1
10
100
1000
1086420
95 10030
VF- Forward Voltage(V)
I - Forward Current ( mA )
F
Yellow
tp/T = 0.001
tp=10µs
0
0
0.4
0.8
1.2
1.6
95 10031
20 40 60 80 100
I - Relative Luminous Intensity
v rel
Tamb - Ambient Temperature ( °C)
Yellow
IF=10mA
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
17533
500
0.5 0.2 0.1 0.05 0.021
I
F
(mA)
t
p
/T
I – Specific Luminous Intensity
Vrel
2.0
Yellow
Figure 12. Relative Luminous Intensity vs. Forward Current
Figure 13. Relative Intensity vs. Wavelength
Figure 14. Forward Current vs. Forward Voltage
Yellow
IF- Forward Current ( mA )
100
0.1
1
10
95 10033
I - Relative Luminous Intensity
v rel
101
0.01
550 570 590 610 630
0
0.2
0.4
0.6
0.8
1.2
650
17530
l– Wavelength ( nm )
1.0
Yellow
I – Relative Intensity
rel
0.1
1
10
100
1000
1086420
95 10034
VF- Forward Voltage(V)
I - Forward Current ( mA )
F
Green
tp/T = 0.001
tp=10µs
www.vishay.com
6
Document Number 83126
Rev. 1.5, 31-Aug-04
VISHAY
TDSG / O / Y51..
Vishay Semiconductors
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
Figure 16. Specific Luminous Intensity vs. Forward Current
Figure 17. Relative Luminous Intensity vs. Forward Current
0
0.4
0.8
1.2
1.6
95 10035
I - Relative Luminous Intensity
v rel
Green
IF=10mA
Tamb - Ambient Temperature (°C)
20 40 60 800 100
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10263
500
v rel
2.0
Green
I - Specific Luminous Intensity
IF(mA)
0.5 0.2 0.1 0.05 0.021 tp/T
IF- Forward Current ( mA )
100
Green
0.1
1
10
95 10037
I - Relative Luminous Intensity
v rel
101
Figure 18. Relative Intensity vs. Wavelength
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
17531
l– Wavelength ( nm )
1.0
Green
I – Relative Intensity
rel
a
f
e
g
d
c
b
DP
12345
10 9 8 7 6
95 10896
1e
2d
4c
6b
9f
10 g
7a
5DP
3 A(C)
8 A(C)
VISHAY
TDSG / O / Y51..
Document Number 83126
Rev. 1.5, 31-Aug-04
Vishay Semiconductors
www.vishay.com
7
Package Dimensions in mm
95 11344
www.vishay.com
8
Document Number 83126
Rev. 1.5, 31-Aug-04
VISHAY
TDSG / O / Y51..
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
