CPH6612 Ordering number : ENN8106 N-Channel Silicon MOSFET CPH6612 General-Purpose Switching Device Applications Features * * * * Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS 12 V 2 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm)1unit V 8 A 0.8 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 Ratings min typ Unit max 20 VGS=8V, VDS=0 VDS=10V, ID=1mA 0.4 VDS=10V, ID=1A 1.4 V 1 A 10 A Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID=1A, VGS=4V ID=0.5A, VGS=2.5V 125 165 m Static Drain-to-Source On-State Resistance 165 235 m ID=0.1A, VGS=1.8V VDS=10V, f=1MHz 230 350 m Input Capacitance RDS(on)3 Ciss 120 pF Output Capacitance Coss VDS=10V, f=1MHz 31 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 25 pF Marking : FY 1.3 2.4 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2504 TS IM TB-00000652 No.8106-1/4 CPH6612 Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit 9 ns Rise Time tr td(off) See specified Test Circuit 29 ns See specified Test Circuit 18 ns tf See specified Test Circuit 22 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=4V, ID=2A 2.3 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=2A 0.5 nC Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=4V, ID=2A 0.75 Diode Forward Voltage VSD IS=2A, VGS=0 0.94 Package Dimensions unit : mm 2238 5 6 5 4 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 1 2 3 Top view 0.2 0.15 0.6 4 2.8 0.05 0.6 1.6 V Electrical Connection 2.9 6 nC 1.2 3 0.95 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 0.2 2 0.7 0.9 1 0.4 SANYO : CPH6 Switching Time Test Circuit VIN VDD=10V 4V 0V ID=1A RL=10 VIN D VOUT PW=10s D.C.1% G CPH6612 P.G 50 S No.8106-2/4 CPH6612 ID -- VDS V VDS=10V 0.8 0.6 1.5V 0.5 0.4 0.3 0.6 0.4 --25 C 0.7 Ta=7 5C Drain Current, ID -- A Drain Current, ID -- A 0.8 ID -- VGS 1.0 1.8 0.9 2.5V 10.0V 4.0V 1.0 0.2 0.1 25 C 0.2 VGS=1.0V 0 0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 Drain-to-Source Voltage, VDS -- V 0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 400 0.2 IT06289 2.0 IT06290 RDS(on) -- Ta 400 Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 300 0.5A 250 1.0A ID=0.1A 200 150 100 50 2 4 6 8 10 Gate-to-Source Voltage, VGS -- V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 7 C --25 C 75 5 3 2 100 50 --40 --20 0 20 40 60 80 100 120 140 160 IT07172 IF -- VSD VGS=0 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.1 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A 0.01 0.4 7 1.0 IT06293 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT06294 Ciss, Coss, Crss -- VDS 5 VDD=10V VGS=4V 3 0.5 Diode Forward Voltage, VSD -- V SW Time -- ID 5 f=1MHz 3 2 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 150 10 7 5 2 C 25 Ta= 2.5V S= A, VG 5 . 0 I D= =4.0V A, V GS .0 1 = ID 200 Ambient Temperature, Ta -- C VDS=10V 1.0 V =1.8 VGS .1A, I D=0 250 IT07171 yfs -- ID 3 300 0 --60 0 0 350 Ta= 75 C 25 C --25 C Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 100 7 tf 5 3 td(off) 2 td(on) 10 7 tr Ciss 100 7 5 Coss 3 Crss 2 5 3 2 0.01 10 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 IT07175 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT07176 No.8106-3/4 CPH6612 VGS -- Qg 10 7 5 VDS=10V ID=2A 3.5 3 2 1.0 0 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC IT06297 PD -- Ta 1.0 Allowable Power Dissipation, PD -- W 3 2 0.1 7 5 2 1m m 1.0 7 5 3 0.5 10 10 s s 0m s Operation in this area is limited by RDS(on). C) 1.5 ID=2A s 25 a= (T 2.0 0 n io at er op 2.5 <10s 10 IDP=8A C Drain Current, ID -- A 3.0 ASO D Gate-to-Source Voltage, VGS -- V 4.0 Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT07177 M 0.8 ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 0 .8m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT07178 Note on usage : Since the CPH6612 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice. PS No.8106-4/4