FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes Switching diode FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N zExternal dimensions (Units : mm) FMN1 / FMP1 UMN1N / UMP1N +0.1 -0.06 (All leads have the same dimensions.) Marking FMN1 : N1 FMP1 : P1 ROHM : SMD5 EIAJ : SC-74A JEDEC : - IMN10 / IMN11 / IMP11 +0.2 -0.1 +0.1 -0.06 (All leads have the same dimensions.) 0.30.6 +0.2 00.1 0.15 ROHM : SMD6 EIAJ : SC-74 JEDEC : SOT-457 0.150.05 (All leads have the same dimensions.) Marking UMN1N : N1 UMP1N : P1 ROHM : UMD5 EIAJ : SC-88A JEDEC : SOT-353 Marking IMN10 : N10 IMN11 : N11 IMP11 : P11 1.30.1 0.90.1 0.65 0.65 0.7 +0.1 0.2 -0.05 0.150.05 (All leads have the same dimensions.) ROHM : UMD6 EIAJ : SC-88 JEDEC : SOT-363 zCircuits FMN1 FMP1 IMN10 IMN11 IMP11 UMN11N UMP11N SMD5 / SMD6 Package UMN1N UMP1N UMD5 / UMD6 Package 00.1 0.1Min. 2.80.2 1.6 -0.1 +0.1 00.1 2.00.2 0.80.1 0.95 0.95 0.3 -0.05 1.250.1 1.1 1.90.2 0.7 UMN11N / UMP11N 2.90.2 zConstruction Silicon epitaxial planar 0.90.1 +0.1 0.2 -0.05 0.15 0.3 -0.05 0.30.6 +0.2 +0.1 00.1 1.30.1 0.65 0.65 0.1Min. 2.80.2 1.6 -0.1 2.00.2 0.80.1 0.95 0.95 zFeatures 1) A wide variety of configurations are available. (UMD5, UMD6, SMD5, SMD6) 2) Multiple diodes in one small surface mount package. 3) Diode characteristics are matched in the package. +0.2 -0.1 1.250.1 1.1 2.10.1 2.90.2 1.90.2 2.10.1 zApplication Ultra high speed switching Marking UMN11N : N11 UMP11N : P11 FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes zAbsolute maximum ratings (Ta=25C) Power Surge Storage Junction dissipation current temperature temperature (1s) (TOTAL) Tstg (C) Tj (C) Isurge (A) Pd (mW) Type Peak reverse voltage VRM (V) DC reverse voltage VR (V) Peak forward current IFM (mA) Mean rectifying current IO (mA) FMN1 UMN1N 80 80 80 25 0.25 150/80 150 -55~+150 FMP1 UMP1N 80 80 80 25 0.25 150/80 150 -55~+150 IMN10 80 80 300 100 4 300 1 150 -55~+150 2 150 -55~+150 150 -55~+150 IMN11 UMN11N 80 80 300 100 4 150 IMP11 UMP11N 80 80 300 100 4 150 2 1 Not to exceed 200mW per element. 2 Not to exceed 120mW per element. zElectrical characteristics (Ta=25C) Forward voltage Reverse current Cond. IF (mA) IR (A) Max. Cond. Type VF (V) Max. Capacitance between terminals CT (pF) Max. Cond. Reverse recovery time Cond. trr (ns) Max. VR (V) f (MHz) 3.5 6 1 4 6 5 70 3.5 6 1 4 6 5 0.1 70 3.5 6 1 4 6 5 100 0.1 70 3.5 6 1 4 6 5 100 0.1 70 3.5 6 1 4 6 5 VR (V) FMN1 UMN1N 0.9 5 0.1 70 FMP1 UMP1N 0.9 5 0.1 IMN10 1.2 100 IMN11 UMN11N 1.2 IMP11 UMP11N 1.2 VR (V) IF (mA) zElectrical characteristic curves (Ta=25C) 50 1 000 75 50 25 10 5 2 1 0.5 0.2 0 0 25 50 75 100 125 150 0.1 0 Ta=25C 85C 50C 0C -30C 100 20 0.2 0.4 0.6 0.8 1.0 1.2 REVERSE CURRENT : IR (nA) Ta=100C FORWARD CURRENT : IF (mA) POWER DISSIPATION : Pd / PdMax. (%) 125 75C 100 50C 10 25C 0C 1.0 -25C 0.1 0.01 0 10 20 30 40 AMBIENT TEMPERATURE : Ta (C) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.1 Power reduction curve Fig.2 Forward characteristics (P Type) Fig.3 Reverse characteristics (P Type) 50 FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes Ta=100C REVERSE CURRENT : IR (nA) 10 5 2 1 0.5 Ta=25C 85C 50C 0C -30C 0.2 0.1 0 50C 10 25C 1 0C -25C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 75C 100 10 20 30 40 60 70 FORWARD VOLTAGE : VF (V) P Type N Type 0 0 2 0.01F 4 6 8 5k 7 PULSE GENERATOR OUTPUT 50 6 50 SAMPLING OSCILLOSCOPE 5 4 pe P Ty 3 INPUT 2 N Type 1 1 2 3 4 5 6 7 8 9 10 FORWARD CURRENT : IF (mA) 100ns Fig.7 Reverse recovery time OUTPUT trr 0 IR 0 0 10 12 14 16 Fig.6 Capacitance between terminals characteristics D.U.T. Ta=25C VR=6V 8 REVERSE VOLTAGE : VR (V) Fig.5 Reverse characteristics (N Type) 10 9 80 2 REVERSE VOLTAGE : VR (V) Fig.4 Forward characteristics (N Type) REVERSE RECOVERY TIME : trr (ns) 50 Ta=25C f=1MHz 4 0.1IR FORWARD CURRENT : IF (mA) 1000 20 CAPACITANCE BETWEEN TERMINALS : CT (pF) 50 Fig.8 Reverse recovery time (trr) measurement circuit